Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AOWF11C60

Name: AOWF11C60
Brand: Alpha & Omega Semiconductor Inc.
SKU: AOWF11C60
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: AOWF11C60

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: AOWF11C60.pdf

Description:: MOSFET N-CH 600V 11A TO262F

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,176

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

AOWF11C60 from Alpha & Omega Semiconductor is a 600V, 11A N-channel enhancement-mode MOSFET in TO-262F package, featuring R_DS(ON) ≤ 0.44Ω at V_GS = 10V, 30nC typical gate charge, and 700V avalanche-rated drain-source breakdown. It delivers high-current capability and low switching losses for offline AC/DC power supplies and LED lighting ballasts.

For engineers reviewing the AOWF11C60 datasheet, pinout, applications, or equivalent options, key selection criteria include its 80A pulsed drain current, 5.1µJ E_oss at 400V, 100% UIS-tested ruggedness, and thermal resistance of R_θJC = 4.5°C/W - critical for high-reliability industrial and telecom power designs.

Technical Context

The AOWF11C60 employs Trench Power AlphaMOS-II process technology to achieve low R_DS(ON) and minimized capacitance (C_iss = 2000pF, C_rss = 2.8pF), enabling fast switching with reduced Miller effect. Its gate threshold voltage (3–5V) ensures robust noise immunity while supporting standard 10V gate drive.

Designed for hard-switched topologies, it supports unclamped inductive switching (UIS) up to 750mJ and features 100% R_g-tested gate resistance (3.5Ω typ). The body diode exhibits t_rr = 485ns and Q_rr = 7.2µC under IF = 11A, dI/dt = 100A/µs conditions - suitable for freewheeling in flyback and PFC stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600V rated; 700V max at T_J = 150°C - enables 400V DC bus derating margin in universal-input SMPS
I_D	11A continuous at T_C = 25°C - defines steady-state conduction capability with heatsink
R_DS(ON)	≤ 0.44Ω at V_GS = 10V - sets conduction loss floor in high-efficiency power stages
Q_g	30nC typical - determines gate driver power requirement and switching speed trade-off
E_oss	5.1µJ at 400V - quantifies output capacitance energy loss during turn-on in ZVS-influenced designs
t_r/t_f	50ns/32ns - enables >200kHz operation in LLC or active-clamp forward converters
R_θJC	4.5°C/W - allows direct thermal path modeling from junction to heatsink in TO-262F mounting

Pinout & Package

TO-262F package: isolated flange, straight lead form, RoHS-compliant, 1000-unit tube packaging. Thermal pad electrically connected to drain.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel conduction; requires ≥10V drive for full enhancement; 3.5Ω internal gate resistance limits dv/dt-induced turn-on
D	Drain	High-voltage power node; tied to thermal pad; supports 700V avalanche rating and 100V/ns dv/dt ruggedness
S	Source	Power return and reference for gate drive; body diode anode; connects to PCB ground plane for low-inductance layout

Key Features

Feature	Design Value
100% UIS tested	Guarantees single-pulse avalanche energy handling up to 750mJ - eliminates screening failure risk in overvoltage transients
Trench AlphaMOS-II process	Delivers 30% lower R_DS(ON) and 40% reduced C_iss vs. prior generation - improves efficiency and EMI in high-frequency SMPS
Low Crss (2.8pF)	Minimizes Miller feedback during switching - reduces gate drive stress and enables faster turn-off with lower dV/dt
RoHS & halogen-free	Complies with IPC-1752A material declaration requirements - supports green manufacturing and export compliance
100% R_g tested	Ensures consistent gate resistance across production lots - critical for predictable switching timing and EMI behavior

Applications

LED Lighting Ballasts	Industrial AC/DC Adapters
Use Scenario: Constant-current LED driver operating from 85–265VAC input with active PFC and flyback topology. IC Role / Device Role / Timing Role: Primary-side switch in PFC boost stage and main power switch in isolated flyback output stage. Use Value: 0.44Ω R_DS(ON) minimizes conduction loss at 11A peak, while 30nC Q_g enables efficient 65–100kHz operation with minimal gate drive loss.	Use Scenario: 150W open-frame power supply for PLC controllers and factory automation I/O modules. IC Role / Device Role / Timing Role: Main switching device in half-bridge LLC resonant converter delivering regulated 24V/6A output. Use Value: 700V BVDSS and 80A IDM support wide input range and surge immunity; 4.5°C/W R_θJC enables compact heatsink design under continuous load.
Telecom Rectifier Modules	Consumer SMPS for Flat Panel TVs
Use Scenario: 48V/30A telecom rectifier using phase-shifted full-bridge topology with synchronous rectification. IC Role / Device Role / Timing Role: High-side primary switch handling 380V DC bus and 15A RMS current per leg. Use Value: Low C_oss (84pF) and E_oss (5.1µJ) reduce turn-on loss in ZVS operation; 100% UIS test ensures reliability during line surges.	Use Scenario: 200W standby + main power supply in 55-inch LCD TV with dual-output (12V/5V) and dynamic load steps. IC Role / Device Role / Timing Role: Main switch in quasi-resonant flyback controller powering both standby and main rails. Use Value: Fast t_r/t_f (50ns/32ns) and low Q_gd (4nC) enable tight regulation during transient loads without compromising EMI performance.

LED Lighting Ballasts

Industrial AC/DC Adapters

Use Scenario: Constant-current LED driver operating from 85–265VAC input with active PFC and flyback topology.

IC Role / Device Role / Timing Role: Primary-side switch in PFC boost stage and main power switch in isolated flyback output stage.

Use Value: 0.44Ω R_DS(ON) minimizes conduction loss at 11A peak, while 30nC Q_g enables efficient 65–100kHz operation with minimal gate drive loss.

Use Scenario: 150W open-frame power supply for PLC controllers and factory automation I/O modules.

IC Role / Device Role / Timing Role: Main switching device in half-bridge LLC resonant converter delivering regulated 24V/6A output.

Use Value: 700V BVDSS and 80A IDM support wide input range and surge immunity; 4.5°C/W R_θJC enables compact heatsink design under continuous load.

Telecom Rectifier Modules

Consumer SMPS for Flat Panel TVs

Use Scenario: 48V/30A telecom rectifier using phase-shifted full-bridge topology with synchronous rectification.

IC Role / Device Role / Timing Role: High-side primary switch handling 380V DC bus and 15A RMS current per leg.

Use Value: Low C_oss (84pF) and E_oss (5.1µJ) reduce turn-on loss in ZVS operation; 100% UIS test ensures reliability during line surges.

Use Scenario: 200W standby + main power supply in 55-inch LCD TV with dual-output (12V/5V) and dynamic load steps.

IC Role / Device Role / Timing Role: Main switch in quasi-resonant flyback controller powering both standby and main rails.

Use Value: Fast t_r/t_f (50ns/32ns) and low Q_gd (4nC) enable tight regulation during transient loads without compromising EMI performance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NK60ZFP	600V/12A, R_DS(ON) = 0.52Ω, Q_g = 35nC, TO-220FP package	Higher R_DS(ON) increases conduction loss by ~18%; same voltage rating but lower thermal performance (R_θJC = 5.0°C/W)	Acceptable where board space permits TO-220FP and efficiency targets allow 0.52Ω conduction loss
IPP60R190C6	600V/11.5A, R_DS(ON) = 0.19Ω, Q_g = 45nC, TO-220 package, CoolMOS™ C6	Lower R_DS(ON) cuts conduction loss nearly in half, but higher Q_g demands stronger gate driver; no UIS rating specified	Preferred for ultra-high-efficiency designs where gate drive capability exists and avalanche testing is not required

Compared with STP12NK60ZFP and IPP60R190C6, the AOWF11C60 offers balanced trade-offs: superior UIS ruggedness and lower Q_g than the CoolMOS part, plus better R_DS(ON) and thermal resistance than the STMicro part - making it optimal for cost-sensitive, reliability-critical industrial power supplies.

Availability

AOWF11C60 is available at Aetrix Electronics and suitable for industrial AC/DC adapters, LED lighting ballasts, and telecom rectifier modules requiring stable component supply and long-term lifecycle support.

Supply support for AOWF11C60 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for power conversion and management.

The AOWF11C60 belongs to AOS's AlphaMOS-II trench MOSFET product line, engineered for high-voltage, medium-current switching in offline power supplies where ruggedness, efficiency, and thermal performance are jointly prioritized.

FAQ

What is the maximum junction temperature rating for the AOWF11C60?

The AOWF11C60 has a maximum junction temperature (T_J) rating of 150°C, validated across all absolute maximum ratings and SOA curves. This limit governs thermal derating above 25°C ambient and defines the upper boundary for safe continuous operation when combined with measured R_θJC = 4.5°C/W and heatsink interface conditions. Exceeding 150°C risks permanent parametric shift or catastrophic failure.

Does the AOWF11C60 support gate drive voltages below 10V?

Yes - the AOWF11C60 has a gate threshold voltage (V_GS(th)) of 3–5V, enabling partial enhancement at 5V drive. However, full conduction (R_DS(ON) ≤ 0.44Ω) requires V_GS ≥ 10V per datasheet test condition. Operating at 5–8V increases R_DS(ON) nonlinearly and raises conduction loss; use only in low-duty-cycle or low-current applications where thermal margin exists.

Is the AOWF11C60 suitable for zero-voltage switching (ZVS) topologies?

Yes - the AOWF11C60's low E_oss (5.1µJ at 400V) and small C_oss (84pF) make it well-suited for ZVS operation in LLC resonant converters and phase-shifted full-bridge designs. Its stored output capacitance energy directly impacts turn-on loss; the 5.1µJ value is confirmed at V_DS = 400V and aligns with typical 380–400V bus applications.

What does "100% UIS tested" mean for the AOWF11C60?

"100% UIS tested" means every AOWF11C60 unit undergoes unclamped inductive switching validation per JEDEC JESD22-A110, with L = 60mH, I_AS = 5A, V_DD = 150V, and R_G = 25Ω. This guarantees minimum single-pulse avalanche energy of 750mJ and confirms robustness against inductive turn-off transients - a critical reliability screen absent in many commodity MOSFETs.

Can the AOWF11C60 replace older-generation 600V MOSFETs like the STP12NK60Z in existing designs?

The AOWF11C60 is not a drop-in replacement for STP12NK60Z due to different package (TO-262F vs. TO-220FP) and thermal pad configuration. While both share 600V rating and similar current, the AOWF11C60's lower R_DS(ON) (0.44Ω vs. 0.52Ω) and improved E_oss offer efficiency gains, but PCB layout revision is required to accommodate TO-262F's isolated flange and lead pitch.

AOWF11C60 Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: -

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 400mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2000 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 28W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262F

AOWF11C60 FAQ

1.How can I place an order for AOWF11C60 through Aetrix?

Please submit a Request for Quotation (RFQ) for AOWF11C60 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AOWF11C60 reliable?

The price and inventory of AOWF11C60 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOWF11C60 is usually 5 days.

3.What payment methods are accepted for AOWF11C60?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOWF11C60 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AOWF11C60?

AOWF11C60 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AOWF11C60 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AOWF11C60?

For technical support, including AOWF11C60 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOWF11C60 requirements.

6.How does Aetrix verify that AOWF11C60 is sourced from the original manufacturer or authorized distributors?

All AOWF11C60 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOWF11C60 meets industry standards.

7.What is the process for return or replacement of AOWF11C60?

All AOWF11C60 units undergo pre-shipment inspection (PSI). If there is an issue with AOWF11C60, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AOWF11C60 part is unused and in its original packaging.

Return procedure for AOWF11C60:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …