Alpha & Omega Semiconductor Inc. AOWF380A60C

Overview

AOWF380A60C from Alpha & Omega Semiconductor is a 600 V, 44 A N-channel power MOSFET in TO-262F package, featuring 0.38 Ω max R_DS(ON), 18 nC typical gate charge, and 700 V avalanche-rated drain-source breakdown voltage. It delivers high-efficiency switching in high-voltage SMPS topologies including PFC, flyback, and LLC converters for server power supplies and lighting systems.

For engineers reviewing the AOWF380A60C datasheet, pinout, applications, or equivalent options, key selection criteria include its 100% UIS-tested ruggedness, enhanced body diode with 251 ns reverse recovery time, low E_oss (2.6 mJ at 400 V), and thermal resistance of 5.0 °C/W junction-to-case - critical for high-reliability industrial and computing power designs.

Technical Context

The AOWF380A60C employs proprietary aMOS5™ trench-gate technology to achieve low conduction loss while maintaining fast switching performance. Its optimized gate charge profile (Q_g = 18 nC, Q_gd = 4.5 nC) and low Crss (2.4 pF) reduce switching losses and improve EMI behavior in hard-switched converters.

Designed for unclamped inductive switching (UIS) robustness, it supports repetitive avalanche energy up to 210 mJ and single-pulse avalanche energy of 3.1 mJ at T_J = 25 °C. The device's body diode exhibits 19 A peak reverse recovery current (I_rm) and 3.1 mC Q_rr, enabling reliable operation in discontinuous conduction mode (DCM) and quasi-resonant topologies.

Key Specifications

Pinout & Package

Package: TO-262F (straight lead, surface-mount compatible variant of TO-262 with isolated tab). Thermal pad on drain side requires soldering to PCB copper for optimal heat transfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Compared with STP60N60DM6 and IXFH60N60X3, the AOWF380A60C provides superior high-frequency efficiency due to its lower Q_g and C_iss, making it better suited for compact, high-density 200–500 kHz SMPS where thermal management is constrained by the TO-262F footprint.

Availability

AOWF380A60C is available at Aetrix Electronics and suitable for server power supplies, LED drivers, and industrial lighting ballasts requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for AOWF380A60C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.

The AOWF380A60C belongs to AOS' aMOS5™ high-voltage superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density AC-DC and DC-DC conversion in datacenter and commercial lighting applications.

FAQ

What is the maximum continuous drain current rating for AOWF380A60C at 100°C case temperature?

The AOWF380A60C supports 7.2 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits imposed by the 5.0 °C/W junction-to-case resistance and 150 °C maximum junction temperature. Designers must verify heatsink design to maintain T_C ≤ 100 °C under full-load conditions to sustain this current level in the AOWF380A60C.

Does AOWF380A60C include integrated gate protection?

The AOWF380A60C does not integrate gate protection circuitry such as Zener clamps or series resistors. Its gate-source voltage rating is ±30 V (dynamic) and ±20 V (DC), requiring external gate driver design with appropriate voltage limiting and slew rate control. The 4.8 Ω internal gate resistance aids in damping oscillations but does not replace discrete gate protection components in high-noise environments.

Is AOWF380A60C suitable for use in synchronous rectification circuits?

Yes, the AOWF380A60C is suitable for synchronous rectification due to its enhanced body diode with 251 ns reverse recovery time and 3.1 mC Q_rr, which reduces switching loss and voltage overshoot during commutation. However, its 0.38 Ω R_DS(ON) is higher than dedicated SR MOSFETs, so system-level efficiency trade-offs must be evaluated against forward conduction loss in low-voltage secondary-side applications.

What is the avalanche energy rating of AOWF380A60C under repetitive conditions?

The AOWF380A60C is rated for 210 mJ repetitive avalanche energy at T_J = 25 °C, with pulse width limited by junction temperature (T_J(MAX) = 150 °C). This rating assumes low-frequency, low-duty-cycle operation and is validated via 100% UIS testing. For sustained avalanche operation, thermal design must ensure T_J remains within limits, and the AOWF380A60C datasheet SOA curves should be consulted.

How does the TO-262F package of AOWF380A60C differ from standard TO-262?

The TO-262F package used by AOWF380A60C features straight leads instead of gull-wing leads, enabling compatibility with through-hole reflow and wave soldering processes while retaining the same thermal performance (R_θJC = 5.0 °C/W) and pinout as standard TO-262. The "F" suffix denotes flange-isolated construction, allowing direct mounting to heatsinks without insulating hardware - a key advantage over non-isolated variants in high-power density layouts.