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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AOWF600A60

Name: AOWF600A60
Brand: Alpha & Omega Semiconductor Inc.
SKU: AOWF600A60
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AOWF600A60

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: AOWF600A60.pdf

Description:: MOSFET N-CH 600V 8A TO262F

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AOWF600A60 from Alpha & Omega Semiconductor is a 600 V, N-channel enhancement-mode MOSFET in TO-262F package, featuring R_DS(ON) ≤ 0.6 Ω at V_GS = 10 V, 11.5 nC total gate charge, and 100% UIS-tested ruggedness. It delivers high avalanche energy (E_AS = 20 mJ), optimized dv/dt immunity (100 V/ns), and enhanced body diode recovery (t_rr = 159 ns) for primary-side switching in LLC resonant converters.

For engineers reviewing the AOWF600A60 datasheet, pinout, applications, or equivalent options, key selection criteria include its 700 V breakdown rating at T_J = 150 °C, 32 A pulsed drain current, low C_oss (19 pF), 4.6 Ω gate resistance, and thermal resistance R_θJC = 5.4 °C/W - all critical for high-efficiency, high-reliability server power supplies.

Technical Context

The AOWF600A60 employs proprietary aMOS5™ technology to achieve low conduction loss while maintaining fast switching with controlled EMI behavior. Its gate threshold voltage (2.9–4.1 V) and transconductance (g_FS = 4.2 S) support stable turn-on across temperature, and its 1.3 pF reverse transfer capacitance minimizes Miller-induced shoot-through risk in hard-switched topologies.

Designed for unclamped inductive switching stress, the device sustains 100% UIS testing per JEDEC JESD22-A115, with E_oss = 1.8 mJ at 400 V and peak diode recovery dv/dt of 100 V/ns. The body diode exhibits low forward voltage (V_SD = 0.8–1.2 V) and robust Q_rr = 1.2 mC, enabling reliable operation in PFC boost stages without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V rated, 700 V guaranteed at T_J = 150 °C - enables 400 V DC bus designs with 75 % derating margin
R_DS(ON)	≤ 0.6 Ω @ V_GS = 10 V, T_J = 25 °C - reduces conduction loss in 200–300 W SMPS primary switches
Q_g	11.5 nC typ - supports 100–300 kHz switching with moderate gate driver strength (e.g., 1–2 A peak)
E_oss	1.8 mJ @ 400 V - lowers turn-off loss and improves ZVS initiation in LLC half-bridge resonant converters
t_rr	159 ns typ - ensures clean body diode commutation in flyback and active-clamp forward topologies
R_θJC	5.4 °C/W - allows >23 W continuous dissipation with minimal heatsink when mounted to copper plane
dv/dt ruggedness	100 V/ns min - prevents false turn-on during high-slew-rate transient events in high-density power modules

Pinout & Package

Package: TO-262F (straight-lead variant of TO-263, isolated tab, RoHS-compliant, Pb-free plating). Thermal pad on underside electrically connected to drain.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal; requires 10 V drive for full enhancement; 4.6 Ω internal gate resistance limits ringing
D	Drain	Main power output; electrically tied to thermal pad; rated for 700 V blocking under worst-case T_J
S	Source	Power return and reference node; used for current sensing and gate drive referencing in high-side configurations

Key Features

Feature	Design Value
aMOS5™ process integration	Enables simultaneous optimization of R_DS(ON), Q_g, and C_oss - no trade-off between conduction and switching loss
Enhanced body diode	159 ns t_rr and 1.2 mC Q_rr reduce reverse recovery loss and EMI in discontinuous conduction mode (DCM) PFC
100% UIS tested	Guarantees single-pulse avalanche capability up to 20 mJ - eliminates need for external clamping in flyback snubberless designs
Optimized EMI profile	Controlled dV/dt (100 V/ns) and low Crss (1.3 pF) suppress parasitic oscillation during hard switching

Applications

Server Power Supply	ATX Silver PSU
Use Scenario: Primary-side switch in 80 PLUS Platinum-rated 1.5 kW server power supply using LLC resonant topology. IC Role / Device Role / Timing Role: High-side switching element in half-bridge configuration; handles 400 V DC input and delivers 12 V/125 A output. Use Value: Low E_oss (1.8 mJ) and precise ZVS timing enable >96 % efficiency at full load without auxiliary resonant circuits.	Use Scenario: Active clamp forward converter in 500 W ATX Silver-certified desktop power supply. IC Role / Device Role / Timing Role: Main switch controlling energy transfer from transformer primary to secondary; operates at 100–150 kHz. Use Value: 100 % UIS rating and 32 A I_DM ensure reliability during startup surges and short-circuit fault conditions.
LED Driver (High-Bay)	TV Backlight Inverter
Use Scenario: Primary switch in constant-current LED driver for industrial high-bay lighting (100–200 W). IC Role / Device Role / Timing Role: Flyback controller MOSFET handling 400 V DC link and delivering regulated 36 V/3 A output. Use Value: Enhanced body diode (t_rr = 159 ns) eliminates need for external ultrafast diode, reducing BOM count and layout area.	Use Scenario: Half-bridge switch in CCFL backlight inverter for 55″ LCD TV power board. IC Role / Device Role / Timing Role: Resonant switch operating above 50 kHz; subjected to repetitive high-voltage ringing and capacitive loading. Use Value: 100 V/ns dv/dt ruggedness prevents spurious turn-on during high-frequency ringing, improving system stability.

Server Power Supply

ATX Silver PSU

Use Scenario: Primary-side switch in 80 PLUS Platinum-rated 1.5 kW server power supply using LLC resonant topology.

IC Role / Device Role / Timing Role: High-side switching element in half-bridge configuration; handles 400 V DC input and delivers 12 V/125 A output.

Use Value: Low E_oss (1.8 mJ) and precise ZVS timing enable >96 % efficiency at full load without auxiliary resonant circuits.

Use Scenario: Active clamp forward converter in 500 W ATX Silver-certified desktop power supply.

IC Role / Device Role / Timing Role: Main switch controlling energy transfer from transformer primary to secondary; operates at 100–150 kHz.

Use Value: 100 % UIS rating and 32 A I_DM ensure reliability during startup surges and short-circuit fault conditions.

LED Driver (High-Bay)

TV Backlight Inverter

Use Scenario: Primary switch in constant-current LED driver for industrial high-bay lighting (100–200 W).

IC Role / Device Role / Timing Role: Flyback controller MOSFET handling 400 V DC link and delivering regulated 36 V/3 A output.

Use Value: Enhanced body diode (t_rr = 159 ns) eliminates need for external ultrafast diode, reducing BOM count and layout area.

Use Scenario: Half-bridge switch in CCFL backlight inverter for 55″ LCD TV power board.

IC Role / Device Role / Timing Role: Resonant switch operating above 50 kHz; subjected to repetitive high-voltage ringing and capacitive loading.

Use Value: 100 V/ns dv/dt ruggedness prevents spurious turn-on during high-frequency ringing, improving system stability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60N60DM6	R_DS(ON) = 0.55 Ω (typ), Q_g = 10.5 nC, TO-220FP package, no UIS test data published	Lacks 100 % UIS validation; higher R_θJA (65 °C/W vs. 80 °C/W for TO-262F) limits thermal headroom in compact layouts	Prefer AOWF600A60 where avalanche robustness and thermal performance in constrained space are mandatory
IPP60R099C7	R_DS(ON) = 0.099 Ω, Q_g = 37 nC, 650 V rating, SuperSO8 package - significantly lower R_DS(ON) but higher switching loss	Higher gate charge increases driver loss; unsuitable for 200–300 kHz LLC due to excessive Q_gd/Q_gs ratio	Choose AOWF600A60 for balanced conduction/switching trade-off in mid-power resonant converters

Compared with STP60N60DM6 and IPP60R099C7, the AOWF600A60 provides verified avalanche ruggedness, superior thermal resistance (R_θJC = 5.4 °C/W), and optimized gate charge for 100–300 kHz operation - making it the preferred choice for thermally constrained, high-reliability server and adapter power stages.

Availability

AOWF600A60 is available at Aetrix Electronics and suitable for server power supplies, ATX Silver PSUs, and LED driver designs requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from authorized channels.

Supply support for AOWF600A60 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.

The AOWF600A60 belongs to AOS' aMOS5™ high-voltage MOSFET product line, engineered specifically for high-efficiency, high-reliability AC-DC power conversion in server, adapter, and lighting applications.

FAQ

What is the maximum junction temperature rating for the AOWF600A60?

The AOWF600A60 has a maximum junction temperature (T_J) rating of 150 °C, validated across its full operating range. This rating is used to define its Safe Operating Area (SOA), thermal derating curves, and UIS test conditions. Operation beyond 150 °C risks permanent parametric shift or failure. The AOWF600A60 datasheet specifies absolute maximum ratings including T_J = 150 °C and storage temperature from –55 to +150 °C.

Does the AOWF600A60 have an integrated gate resistor?

Yes, the AOWF600A60 features an internal gate resistance (R_g) of 4.6 Ω, measured at 1 MHz. This value is specified in the Electrical Characteristics table and contributes to reduced gate ringing and improved EMI performance. While external gate resistors may still be used for fine-tuning switching speed, the built-in R_g ensures baseline control over dV/dt and overshoot without requiring additional components in many designs using the AOWF600A60.

Is the AOWF600A60 suitable for use in PFC boost stages?

Yes, the AOWF600A60 is suitable for continuous-conduction-mode (CCM) PFC boost stages due to its 100 % UIS testing, enhanced body diode (t_rr = 159 ns, Q_rr = 1.2 mC), and 700 V breakdown at elevated temperature. Its low R_DS(ON) (≤ 0.6 Ω) minimizes conduction loss at high average currents, and its 100 V/ns dv/dt ruggedness prevents false turn-on during high-slew transients typical in PFC operation - all confirmed in the AOWF600A60 datasheet.

What is the gate threshold voltage range for the AOWF600A60?

The AOWF600A60 has a gate threshold voltage (V_GS(th)) range of 2.9 V to 4.1 V at I_D = 250 μA and T_J = 25 °C. This range ensures reliable turn-on with standard 5 V or 10 V gate drivers while maintaining noise immunity. The threshold exhibits positive temperature coefficient, rising slightly with junction temperature - a behavior documented in Figure 5 of the AOWF600A60 datasheet and beneficial for current sharing in paralleled configurations.

Can the AOWF600A60 replace older-generation 600 V MOSFETs in existing designs?

The AOWF600A60 can replace legacy 600 V TO-262/TO-220 MOSFETs in many cases due to identical pinout (G-D-S), same voltage rating, and improved parameters - including lower R_DS(ON), reduced Q_g, and verified UIS performance. However, layout review is recommended to confirm thermal interface compatibility and gate drive adequacy, as the AOWF600A60's enhanced switching behavior may expose previously masked layout weaknesses. Always validate with actual AOWF600A60 samples in the target application.

AOWF600A60 Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: aMOS5™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 2.1A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 11.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 608 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 23W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262F

AOWF600A60 FAQ

1.How can I place an order for AOWF600A60 through Aetrix?

Please submit a Request for Quotation (RFQ) for AOWF600A60 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AOWF600A60 reliable?

The price and inventory of AOWF600A60 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOWF600A60 is usually 5 days.

3.What payment methods are accepted for AOWF600A60?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOWF600A60 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AOWF600A60?

AOWF600A60 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AOWF600A60 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AOWF600A60?

For technical support, including AOWF600A60 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOWF600A60 requirements.

6.How does Aetrix verify that AOWF600A60 is sourced from the original manufacturer or authorized distributors?

All AOWF600A60 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOWF600A60 meets industry standards.

7.What is the process for return or replacement of AOWF600A60?

All AOWF600A60 units undergo pre-shipment inspection (PSI). If there is an issue with AOWF600A60, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AOWF600A60 part is unused and in its original packaging.

Return procedure for AOWF600A60:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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