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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AOY66919

Name: AOY66919
Brand: Alpha & Omega Semiconductor Inc.
SKU: AOY66919
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AOY66919

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: TO-251-3 Stub Leads, IPAK

Datasheet:: AOY66919.pdf

Description:: N

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AOY66919 from Alpha & Omega Semiconductor is a 100V N-Channel enhancement-mode MOSFET using Trench Power AlphaSGT™ technology, designed for high-efficiency power switching in DC-DC converters and motor drives. It delivers 70A continuous drain current at V_GS=10V, <6.5mΩ R_DS(ON) at 10V, and <8.5mΩ at 4.5V, enabling logic-level gate drive compatibility with microcontrollers and PWM controllers.

For engineers reviewing the AOY66919 datasheet, pinout, applications, or equivalent options, key selection criteria include its 100V V_DS rating, low gate charge (Q_g=47–66nC at 10V), 100% UIS-tested ruggedness, TO-251B package thermal performance (R_θJC=0.8°C/W), and body diode recovery characteristics (Q_rr=214nC, t_rr=36ns).

Technical Context

The AOY66919 employs AlphaSGT™ trench-gate superjunction architecture to achieve high cell density and low specific on-resistance. Its gate threshold voltage (1.5–2.6V) ensures reliable turn-on with 3.3V/5V logic, while low Q_g × R_DS(ON) figure-of-merit supports high-frequency synchronous rectification up to 1MHz.

Thermal design is enabled by a junction-to-case resistance of 0.8°C/W and validated avalanche energy rating (E_AS=115mJ). The device is fully characterized for unclamped inductive switching (UIS), gate resistance (R_g=0.8–2.7Ω), and body diode reverse recovery under 500A/μs di/dt conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100V - Supports 48V industrial bus and 60V automotive input systems with margin.
I_D (V_GS=10V)	70A - Enables high-current power stages without paralleling in 12–24V output converters.
R_DS(ON) (V_GS=10V)	<6.5mΩ - Reduces conduction loss to <3.2W at 70A, critical for thermally constrained PCB layouts.
R_DS(ON) (V_GS=4.5V)	<8.5mΩ - Ensures full enhancement with 3.3V GPIO or low-voltage PWM drivers.
Q_g (10V)	47–66nC - Limits gate drive power loss and enables efficient operation at 500kHz–1MHz switching frequencies.
E_AS	115mJ - Guarantees robustness against inductive load transients without external snubbers.
t_rr/Q_rr	36ns / 214nC - Minimizes body diode switching loss and shoot-through risk in synchronous buck topologies.

Pinout & Package

AOY66919 is housed in a TO-251B (IPAK short lead) package with three terminals: Gate (G), Drain (D), and Source (S). The package features exposed drain pad for enhanced thermal conduction and is optimized for surface-mount assembly on 2oz copper PCBs.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control terminal	Accepts logic-level voltage (1.5–2.6V V_th) to modulate channel conductivity; requires ≤2.7Ω gate resistor for optimal switching.
D	Drain connection	High-side or low-side switch node; electrically connected to exposed metal tab for thermal and electrical path to heatsink or ground plane.
S	Source reference	Return path for load current; serves as common reference for gate drive and current sensing in low-side configurations.

Key Features

Feature	Design Value
Trench Power AlphaSGT™ technology	Delivers industry-leading R_DS(ON) × Q_g FOM for reduced total switching + conduction loss in high-frequency SMPS.
100% UIS tested	Each unit validated for unclamped inductive switching survival at rated E_AS, eliminating need for batch reliability screening.
Logic-level gate drive	Operates fully enhanced from 4.5V, compatible with standard microcontroller I/O and integrated gate drivers without level-shifting.
RoHS 2.0 & Halogen-Free	Meets EU environmental compliance requirements for industrial and consumer end equipment without compromising thermal or electrical performance.
Low R_θJC (0.8°C/W)	Enables >62W steady-state power dissipation at T_C=100°C, supporting compact heatsink-less designs in space-constrained applications.

Applications

Server VRM	Industrial Motor Drive
Use Scenario: High-density 48V-to-12V/5V point-of-load conversion in AI accelerator racks requiring >95% efficiency at 50–100A loads. IC Role / Device Role: Synchronous rectifier in multiphase buck converter, replacing Schottky diodes to reduce forward drop and thermal stress. Use Value: Sub-6.5mΩ R_DS(ON) cuts conduction loss by 40% vs. comparable 100V MOSFETs, directly improving VRM thermal margin and power density.	Use Scenario: Half-bridge inverter stage for 200–500W BLDC motors in factory automation actuators operating from 24–48V DC bus. IC Role / Device Role: Low-side switch with fast body diode recovery, handling regenerative braking currents and PWM commutation. Use Value: 36ns t_rr and 214nC Q_rr minimize cross-conduction loss and EMI during dead-time transitions, improving system efficiency and EMC compliance.
Telecom PSU	EV On-Board Charger (OBC) Auxiliary Supply
Use Scenario: Primary-side active clamp flyback or LLC resonant converter in 1kW telecom rectifiers requiring high reliability and 10-year field life. IC Role / Device Role: Main switching FET with 100% UIS qualification, sustaining repetitive transient overloads from line surges and hot-swap events. Use Value: 115mJ E_AS rating eliminates need for external clamping circuits, reducing BOM count and board area while maintaining safety-critical ruggedness.	Use Scenario: Isolated auxiliary power supply (12V/3A) in EV on-board chargers, powered from high-voltage battery (400–800V) via flyback transformer. IC Role / Device Role: Primary-side switch in flyback topology, operating at 100–200kHz with tight duty-cycle control. Use Value: 47–66nC Q_g allows clean gate drive with minimal driver IC power consumption, extending auxiliary supply efficiency and reducing thermal load on OBC control board.

Server VRM

Industrial Motor Drive

Use Scenario: High-density 48V-to-12V/5V point-of-load conversion in AI accelerator racks requiring >95% efficiency at 50–100A loads.

IC Role / Device Role: Synchronous rectifier in multiphase buck converter, replacing Schottky diodes to reduce forward drop and thermal stress.

Use Value: Sub-6.5mΩ R_DS(ON) cuts conduction loss by 40% vs. comparable 100V MOSFETs, directly improving VRM thermal margin and power density.

Use Scenario: Half-bridge inverter stage for 200–500W BLDC motors in factory automation actuators operating from 24–48V DC bus.

IC Role / Device Role: Low-side switch with fast body diode recovery, handling regenerative braking currents and PWM commutation.

Use Value: 36ns t_rr and 214nC Q_rr minimize cross-conduction loss and EMI during dead-time transitions, improving system efficiency and EMC compliance.

Telecom PSU

EV On-Board Charger (OBC) Auxiliary Supply

Use Scenario: Primary-side active clamp flyback or LLC resonant converter in 1kW telecom rectifiers requiring high reliability and 10-year field life.

IC Role / Device Role: Main switching FET with 100% UIS qualification, sustaining repetitive transient overloads from line surges and hot-swap events.

Use Value: 115mJ E_AS rating eliminates need for external clamping circuits, reducing BOM count and board area while maintaining safety-critical ruggedness.

Use Scenario: Isolated auxiliary power supply (12V/3A) in EV on-board chargers, powered from high-voltage battery (400–800V) via flyback transformer.

IC Role / Device Role: Primary-side switch in flyback topology, operating at 100–200kHz with tight duty-cycle control.

Use Value: 47–66nC Q_g allows clean gate drive with minimal driver IC power consumption, extending auxiliary supply efficiency and reducing thermal load on OBC control board.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-Channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF540N	R_DS(ON) = 44mΩ @ 10V; V_DS = 100V; Q_g = 71nC - higher conduction loss and gate drive demand.	Limited to lower-frequency (<100kHz), lower-current applications due to higher R_DS(ON) and thermal resistance.	Select when cost sensitivity outweighs efficiency and thermal constraints; not suitable for high-density or high-frequency designs.
STP110N10F7	R_DS(ON) = 7.5mΩ @ 10V; V_DS = 100V; Q_g = 52nC - slightly higher R_DS(ON), similar Q_g, TO-220 package.	Requires larger heatsink due to TO-220 R_θJA; less suitable for surface-mount automated assembly.	Prefer for through-hole prototyping or legacy board reuse; AOY66919 offers superior thermal performance and SMT manufacturability.

Compared with IRF540N and STP110N10F7, AOY66919 provides the lowest R_DS(ON) and best R_DS(ON) × Q_g FOM in TO-251B, enabling higher power density, higher frequency operation, and improved thermal management in space- and efficiency-critical applications.

Availability

AOY66919 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom PSUs, and EV auxiliary supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for AOY66919 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power modules for computing, industrial, and automotive markets.

The AOY66919 belongs to AOS's AlphaSGT™ N-Channel MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion and motor control where low R_DS(ON), fast switching, and ruggedness are critical.

FAQ

What is the maximum continuous drain current for AOY66919 at 100°C case temperature?

The AOY66919 supports 48A continuous drain current at T_C=100°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-251B package and ensures safe operation without exceeding the 150°C maximum junction temperature under typical PCB layout conditions with 2oz copper.

Does AOY66919 support logic-level gate drive from a 3.3V microcontroller?

Yes, AOY66919 has a gate threshold voltage range of 1.5–2.6V and guaranteed R_DS(ON) <8.5mΩ at V_GS=4.5V, making it fully compatible with 3.3V logic outputs when used with appropriate gate resistor sizing. For robust turn-on, a 3.3V GPIO driving a low-impedance gate path is sufficient.

What is the avalanche energy rating of AOY66919 and how is it tested?

The AOY66919 is rated for 115mJ single-pulse avalanche energy (E_AS) with L=0.1mH, and every unit undergoes 100% unclamped inductive switching (UIS) testing per JEDEC JESD22-A110. This validates ruggedness against inductive load transients without external protection components.

How does the body diode performance of AOY66919 compare to standard MOSFETs in synchronous rectification?

The AOY66919 features a fast, soft-recovery body diode with t_rr=36ns and Q_rr=214nC at I_F=20A and di/dt=500A/μs. This reduces reverse recovery loss and EMI versus standard MOSFETs, enabling cleaner zero-voltage switching and higher efficiency in synchronous buck and LLC topologies.

Is AOY66919 RoHS compliant and halogen-free?

Yes, AOY66919 meets RoHS 2.0 Directive 2011/65/EU and is certified halogen-free per IEC 61249-2-21, with no brominated flame retardants or chlorine-based compounds in its packaging or die construction.

AOY66919 Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: AlphaSGT™

Package/Case:: TO-251-3 Stub Leads, IPAK

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 22A (Ta), 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 66 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3420 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 6.2W (Ta), 156W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-251B

AOY66919 FAQ

1.How can I place an order for AOY66919 through Aetrix?

Please submit a Request for Quotation (RFQ) for AOY66919 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AOY66919 reliable?

The price and inventory of AOY66919 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOY66919 is usually 5 days.

3.What payment methods are accepted for AOY66919?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOY66919 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AOY66919?

AOY66919 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AOY66919 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AOY66919?

For technical support, including AOY66919 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOY66919 requirements.

6.How does Aetrix verify that AOY66919 is sourced from the original manufacturer or authorized distributors?

All AOY66919 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOY66919 meets industry standards.

7.What is the process for return or replacement of AOY66919?

All AOY66919 units undergo pre-shipment inspection (PSI). If there is an issue with AOY66919, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AOY66919 part is unused and in its original packaging.

Return procedure for AOY66919:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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