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Infineon Technologies AUIRF540Z

Part No.:
AUIRF540Z
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixAUIRF540Z.pdf
Description:
MOSFET N-CH 100V 36A TO220AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,814

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Product details

Overview

AUIRF540Z from Infineon is an automotive-grade N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, rated for 100V VDSS, 36A continuous drain current at TC = 25°C, and 21 mΩ typical RDS(on) at VGS = 10V. It operates up to 175°C junction temperature and supports fast switching with 15 ns turn-on delay and 39 ns fall time - deployed in engine control modules, DC-DC converters, and motor drivers.

For engineers reviewing the AUIRF540Z datasheet, AUIRF540Z pinout, AUIRF540Z application, or AUIRF540Z equivalent, key selection criteria include its 100V breakdown voltage, 21 mΩ on-resistance at 10V gate drive, 175°C thermal rating, repetitive avalanche capability (EAS = 120 mJ tested), and TO-220AB mechanical compatibility with standard heatsinks.

Technical Context

This MOSFET uses advanced planar silicon processing to minimize conduction loss while maintaining robustness against unclamped inductive switching. Its gate threshold voltage (2.0–4.0 V) ensures reliable turn-on with standard 5V/10V logic-level drivers, and its low Ciss (1770 pF) and Crss (100 pF) support high-frequency PWM operation up to several hundred kHz.

The device integrates a body diode with 36A continuous source current capability, 1.3V forward voltage at 22A, and 33–50 ns reverse recovery time - enabling synchronous rectification and freewheeling in buck and half-bridge topologies without external diodes.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS100 V - Withstands 100V drain-source blocking voltage before avalanche onset; suitable for 48V automotive bus and 24V industrial systems.
RDS(on) typ.21 mΩ @ VGS = 10V, ID = 22A - Enables <1W conduction loss at 22A, reducing thermal load in high-current switching nodes.
ID cont. @ TC = 25°C36 A - Maximum continuous silicon-limited current with adequate heatsinking; derates to 25A at 100°C case temperature.
TJ max+175°C - Supports operation in under-hood environments and sealed enclosures without forced cooling.
EAS tested120 mJ - Validated single-pulse avalanche energy at TJ = 25°C, L = 0.46 mH, IAS = 20A - enables robustness in inductive load switching.
Qg42–63 nC - Total gate charge determines driver strength requirement; compatible with standard gate drivers like IR2110 or UCC27531.
RθJC1.64 °C/W - Junction-to-case thermal resistance defines minimum heatsink interface performance for thermal design.

Pinout & Package

Package: TO-220AB (3-lead, through-hole, isolated tab). The metal tab is electrically connected to the Drain terminal and must be insulated from chassis unless used as heatsink return path.

Pin/Terminal Circuit Role Design Meaning
Lead 1 (Left)Source (S)Common return path for load current; connects to ground or low-side reference; carries full load current and body diode conduction.
Lead 2 (Center)Gate (G)High-impedance control input; requires <63 nC charge for full enhancement; sensitive to ESD and ringing - needs gate resistor (10–25 Ω) and local bypass.
Lead 3 (Right) + TabDrain (D)Main power output node; ties to positive rail or inductive load; tab provides thermal path and must be electrically isolated unless system design permits drain-referenced heatsink.

Key Features

Feature Design Value
Automotive qualificationAEC-Q101 qualified per Infineon's automotive standards - validated for temperature cycling, humidity, and mechanical shock in vehicle ECUs.
Repetitive avalanche ratingRated for unlimited repetitive avalanche events as long as TJ ≤ 175°C - eliminates need for snubbers in solenoid or relay driving circuits.
Ultra-low RDS(on)21 mΩ typ. at 10V gate drive - reduces I²R losses by >30% vs. legacy 40–50 mΩ MOSFETs in same package, improving efficiency in 12V/24V power stages.
Fast switching15 ns td(on), 39 ns tf - enables >200 kHz PWM in DC-DC converters while limiting switching loss and EMI generation.
Body diode performancetrr = 33–50 ns, Qrr = 41–62 nC - supports zero-voltage switching (ZVS) transitions and minimizes diode recovery loss in half-bridge configurations.

Applications

Engine Control Unit (ECU) Fuel Injector Driver 12V Automotive DC-DC Converter Primary Switch

Use Scenario: Driving high-current fuel injectors (12–16V, 4–6A peak) in gasoline direct injection systems with precise pulse-width modulation.

IC Role / Device Role / Timing Role: High-side or low-side switch controlling injector coil energization/de-energization; handles 100V flyback spikes during turn-off.

Use Value: 175°C rating ensures reliability in hot engine bay; 120 mJ avalanche energy absorbs inductive kickback without clamping diodes.

Use Scenario: Primary-side synchronous rectifier or main switch in 12V-to-5V/3.3V buck converter powering infotainment and ADAS sensors.

IC Role / Device Role / Timing Role: Power switch operating at 200–500 kHz PWM frequency; conducts 15–25A average current during transient loads.

Use Value: 21 mΩ RDS(on) limits conduction loss to <1.3W at 22A, enabling compact thermal design without active cooling.

Electric Power Steering (EPS) Motor Phase Switch Industrial 24V BLDC Motor Gate Driver Output Stage

Use Scenario: Half-bridge leg in 24V EPS motor controller handling bidirectional torque commands and regenerative braking currents.

IC Role / Device Role / Timing Role: Low-side N-channel switch paired with high-side driver; commutates motor phases with <50 ns dead-time control.

Use Value: Fast 39 ns fall time and low Qgd (15 nC) reduce shoot-through risk and switching loss during high dv/dt transitions.

Use Scenario: Final output stage in industrial BLDC motor driver board delivering up to 30A continuous phase current in factory automation actuators.

IC Role / Device Role / Timing Role: Inverter switch in three-phase bridge; subjected to repetitive avalanche during motor stall and short-circuit events.

Use Value: Repetitive avalanche rating allows safe operation during fault conditions without immediate failure - extends field service life and reduces warranty claims.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP100N10F7100V, 100A, RDS(on) = 9.5 mΩ @ 10V, D2Pak package, no AEC-Q101 certificationHigher current capacity but larger footprint; lacks automotive qualification and lower thermal margin (TJ = 175°C same, but RθJA higher)Select when board space allows D2Pak and automotive qualification is not required; avoid in safety-critical ECU designs.
IRF540N100V, 33A, RDS(on) = 44 mΩ @ 10V, TO-220, commercial grade only (no AEC-Q101)Higher on-resistance increases conduction loss by ~2×; no repetitive avalanche rating or 175°C guaranteeAcceptable for non-automotive prototypes or cost-sensitive consumer gear; unsuitable for production automotive or high-reliability industrial use.

Compared with STP100N10F7 and IRF540N, AUIRF540Z delivers certified automotive robustness, lower RDS(on) than IRF540N, and TO-220 compatibility unlike STP100N10F7 - making it the optimal choice for volume automotive power stages where qualification, thermal headroom, and form-factor are jointly constrained.

Availability

AUIRF540Z is available at Aetrix Electronics and suitable for engine control units, 12V/24V DC-DC converters, and electric power steering systems requiring stable component supply across multi-year automotive production cycles.

Supply support for AUIRF540Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global manufacturing and quality systems aligned to ISO/TS 16949.

AUIRF540Z belongs to Infineon's HEXFET® automotive power MOSFET product line, engineered specifically for high-reliability, high-temperature switching in engine, transmission, and chassis control systems.

FAQ

Is AUIRF540Z pin-compatible with IRF540N?

Yes - both use identical TO-220AB pinout (G-D-S left-to-right with tab as Drain). However, AUIRF540Z has tighter RDS(on) (21 mΩ vs. 44 mΩ), higher ID (36A vs. 33A), and AEC-Q101 qualification. Electrical substitution is possible, but automotive designs must verify qualification compliance and thermal margins.

What is the maximum gate voltage rating for AUIRF540Z?

The absolute maximum VGS is ±20 V. Operation above ±15 V risks gate oxide damage; recommended drive is 10 V for full enhancement with margin. Gate drive circuits must include clamping (e.g., Zener diode) if using bootstrap or high-side drivers with overshoot risk.

Does AUIRF540Z require a heatsink in 25A continuous operation?

Yes - at 25A and 21 mΩ RDS(on), conduction loss is ~13W. With RθJC = 1.64 °C/W and ambient at 70°C, even a modest 2°C/W heatsink yields TJ ≈ 150°C. A heatsink with ≤1.5°C/W thermal resistance and thermal interface material is mandatory for sustained 25A operation.

Can AUIRF540Z be used in synchronous rectification?

Yes - its body diode has trr = 33–50 ns and Qrr = 41–62 nC, enabling efficient synchronous rectification in buck converters up to ~300 kHz. However, external Schottky diodes may still be preferred for ultra-low VSD (<0.5V) or sub-10 ns recovery in high-efficiency designs.

AUIRF540Z Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
36A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
26.5mOhm @ 22A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
63 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1770 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
92W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB

AUIRF540Z FAQ

1.How can I place an order for AUIRF540Z through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRF540Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRF540Z reliable?

The price and inventory of AUIRF540Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF540Z is usually 5 days.

3.What payment methods are accepted for AUIRF540Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF540Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRF540Z?

AUIRF540Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRF540Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRF540Z?

For technical support, including AUIRF540Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF540Z requirements.

6.How does Aetrix verify that AUIRF540Z is sourced from the original manufacturer or authorized distributors?

All AUIRF540Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF540Z meets industry standards.

7.What is the process for return or replacement of AUIRF540Z?

All AUIRF540Z units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF540Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRF540Z part is unused and in its original packaging.

Return procedure for AUIRF540Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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