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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRF7669L2TR

Name: AUIRF7669L2TR
Brand: Infineon Technologies
SKU: AUIRF7669L2TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRF7669L2TR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric L8

Datasheet:: AUIRF7669L2TR.pdf

Description:: MOSFET N-CH 100V 19A DIRECTFET

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Product details

Overview

AUIRF7669L2TR from Infineon is an automotive-grade N-channel Power MOSFET in DirectFET® L8 package, rated for 100 V V_DS, 3.5 mΩ R_DS(on) (typ.), 114 A continuous drain current at T_C = 25°C, and 175°C maximum junction temperature. It delivers high power density and dual-sided cooling capability for motor drive and heavy-load DC-DC converters in ICE, HEV, and EV platforms.

For engineers reviewing the AUIRF7669L2TR datasheet, AUIRF7669L2TR pinout, AUIRF7669L2TR application, or AUIRF7669L2TR equivalent, key selection criteria include low on-resistance per footprint, avalanche robustness (E_AS = 260 mJ), thermal performance under dual-sided cooling, and compliance with automotive qualification standards (AEC-Q101).

Technical Context

This MOSFET employs HEXFET® silicon with optimized cell layout to achieve 3.5 mΩ R_DS(on) at 10 V gate drive while maintaining low Q_g (81 nC) and low C_iss (5660 pF). Its DirectFET® L8 packaging enables top-side and bottom-side thermal paths via exposed drain copper can and substrate-mounted source terminals.

The device supports unclamped inductive switching with repetitive avalanche rating (I_AR up to 460 A, E_AR = 300 mJ at T_J = 25°C), and features a gate threshold voltage of 4.0 V (typ.) with negative temperature coefficient (−13 mV/°C), enabling stable turn-on behavior across −55°C to +175°C operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum drain-to-source blocking voltage for 12 V/48 V battery system transients and load dump protection
R_DS(on) (typ.)	3.5 mΩ @ V_GS = 10 V, I_D = 68 A - Enables <1.2 W conduction loss at 68 A, critical for high-efficiency motor phase legs
I_D (cont., T_C = 25°C)	114 A - Silicon-limited current capacity supporting peak torque delivery in traction inverters
Q_g (typ.)	81 nC - Low gate charge reduces driver power and switching losses in high-frequency (>20 kHz) DC-DC stages
T_J (max)	+175°C - Supports sustained operation in engine bay or powertrain control units without derating
E_AS	260 mJ - Thermally limited single-pulse avalanche energy ensures survivability during short-circuit events in motor drives
R_θJ-Can	1.2 °C/W - Low junction-to-can thermal resistance enables efficient heat extraction through heatsink-clipped top surface

Pinout & Package

Package: DirectFET® L8 - large-can, double-sided cooling, footprint compatible with TO-252AA (DPak), 0.7 mm profile, metalized top (Drain) and bottom (Source/Gate) terminals.

Pin/Terminal	Circuit Role	Design Meaning
D (Top Can Surface)	Drain	Primary high-current power path; thermally coupled to heatsink for dual-sided cooling
S (Bottom Substrate Pads)	Source	Low-inductance return path; multiple parallel pads minimize parasitic inductance in high-di/dt switching
G (Bottom Substrate Pad)	Gate	Isolated control terminal; optimized pad geometry minimizes gate loop inductance for fast, oscillation-free switching

Key Features

Feature	Design Value
Dual-sided cooling architecture	Enables simultaneous heat extraction from top (Drain can) and bottom (PCB substrate), reducing total thermal resistance by >40% vs. standard SO-8
Repetitive avalanche capability	Rated for I_AR = 460 A and E_AR = 300 mJ, allowing reliable operation under unclamped inductive fault conditions without external snubbers
Automotive qualification	AEC-Q101 qualified with 175°C operation, ensuring long-term reliability in under-hood environments subject to thermal cycling and vibration
Low-profile, DPak-compatible footprint	0.7 mm height and TO-252AA outline allow drop-in replacement in existing layouts while enabling higher power density than conventional packages

Applications

Electric Power Steering (EPS)

48 V Mild Hybrid DC-DC Converter

Use Scenario: High-current H-bridge driving brushless motor for steering assist under transient load (e.g., parking maneuvers).

IC Role / Device Role / Timing Role: Main phase-switching MOSFET in three-phase inverter, operating at 10–20 kHz PWM with peak currents >100 A.

Use Value: 3.5 mΩ R_DS(on) and 175°C T_J rating enable compact heatsink design and uninterrupted torque delivery during extended low-speed operation.

Use Scenario: Synchronous rectification in bidirectional buck-boost converter linking 12 V and 48 V domains.

IC Role / Device Role / Timing Role: High-side and low-side switch handling 100+ A continuous current with <100 ns switching transitions.

Use Value: 81 nC Q_g and low C_oss (1140 pF) reduce gate drive loss and improve light-load efficiency over competing TOLL or D²PAK devices.

Traction Inverter Auxiliary Stage

Start-Stop Battery Management System

Use Scenario: Pre-charge and main contactor switching in high-voltage traction inverter auxiliary power supply.

IC Role / Device Role / Timing Role: High-reliability power switch managing 100 V bus connection with controlled inrush and fault isolation.

Use Value: 260 mJ E_AS and 460 A I_DM ensure safe interruption of inductive pre-charge currents without secondary protection circuitry.

Use Scenario: Load switching and reverse polarity protection in 12 V battery monitoring and distribution modules.

IC Role / Device Role / Timing Role: Robust power FET handling cold-crank pulses (−40°C to +125°C ambient) and load dump transients (ISO 7637-2 Pulse 5a).

Use Value: −55°C to +175°C T_STG/T_J range and 100 V V_DS withstand capability eliminate need for external TVS clamping in cost-sensitive BMS designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar automotive N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB180N10N3 G	R_DS(on) = 1.8 mΩ (lower), but TO-263-7 package; higher Q_g = 125 nC; no dual-sided cooling	Better conduction loss at <80 A, but less suitable for space-constrained dual-cooled layouts	Select when lowest R_DS(on) dominates and PCB thermal design supports single-sided cooling only
STL220N10F7	R_DS(on) = 3.7 mΩ (slightly higher), 100 V, 175°C, but H2PAK-2 package; lower E_AS = 120 mJ	Compatible footprint but reduced avalanche margin; not qualified for repetitive avalanche	Select when cost sensitivity outweighs need for guaranteed repetitive fault tolerance in safety-critical systems

Compared with IPB180N10N3G and STL220N10F7, AUIRF7669L2TR uniquely balances ultra-low R_DS(on), low Q_g, dual-sided cooling, and full AEC-Q101 repetitive avalanche rating-making it optimal for thermally constrained, high-reliability automotive power stages where both efficiency and fault resilience are mandatory.

Availability

AUIRF7669L2TR is available at Aetrix Electronics and suitable for electric power steering, 48 V mild hybrid DC-DC conversion, and traction inverter auxiliary stages requiring stable component supply, automotive qualification, and dual-sided thermal management.

Supply support for AUIRF7669L2TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

The AUIRF7669L2TR belongs to Infineon's Automotive HEXFET® Power MOSFET product line, engineered specifically for high-current, high-temperature automotive power conversion where low conduction loss, fast switching, and ruggedness under transient stress are essential.

FAQ

What is the recommended gate resistor value for AUIRF7669L2TR in a 20 kHz motor drive application?

A 1.8 Ω gate resistor is validated in the datasheet for turn-off delay (t_d(off) = 27 ns) and fall time (t_f = 14 ns) measurements under 68 A load. For 20 kHz operation, this value balances switching loss reduction and EMI control; values below 1.2 Ω risk ringing due to low gate loop inductance, while above 3.3 Ω increase turn-off losses disproportionately.

Does AUIRF7669L2TR support soldering with vapor phase reflow?

Yes-DirectFET® L8 is qualified for vapor phase, infrared, and convection reflow per application note AN-1035. Peak board temperature must not exceed 260°C for ≤30 seconds, and thermal profiles must maintain ΔT between top (Drain) and bottom (Source/Gate) surfaces within 20°C to prevent warpage-induced solder joint fatigue.

How is the 114 A continuous drain current rated-silicon-limited or package-limited?

The 114 A rating is explicitly silicon-limited at T_C = 25°C and V_GS = 10 V, meaning the die's thermal and electrical limits-not the package's current-carrying capacity-define this value. The package-limited I_D is 375 A, confirming ample margin for transient surge handling without bond wire fusing.

Can AUIRF7669L2TR be used in synchronous rectification for a 48 V to 12 V buck converter?

Yes-its 3.5 mΩ R_DS(on), 81 nC Q_g, and 1140 pF C_oss enable high efficiency at 300–500 kHz switching frequencies. The body diode's 1.3 V V_SD and 61 ns t_rr are acceptable for forced-commutated synchronous operation, and the 175°C T_J rating accommodates high-power-density PCB layouts with minimal heatsinking.

AUIRF7669L2TR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric L8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 19A (Ta), 114A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.4mOhm @ 68A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 120 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5660 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.3W (Ta), 100W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DirectFET™ Isometric L8

AUIRF7669L2TR FAQ

1.How can I place an order for AUIRF7669L2TR through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRF7669L2TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRF7669L2TR reliable?

The price and inventory of AUIRF7669L2TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF7669L2TR is usually 5 days.

3.What payment methods are accepted for AUIRF7669L2TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF7669L2TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRF7669L2TR?

AUIRF7669L2TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRF7669L2TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRF7669L2TR?

For technical support, including AUIRF7669L2TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF7669L2TR requirements.

6.How does Aetrix verify that AUIRF7669L2TR is sourced from the original manufacturer or authorized distributors?

All AUIRF7669L2TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF7669L2TR meets industry standards.

7.What is the process for return or replacement of AUIRF7669L2TR?

All AUIRF7669L2TR units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF7669L2TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRF7669L2TR part is unused and in its original packaging.

Return procedure for AUIRF7669L2TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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