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Infineon Technologies AUIRF7736M2TR
- Part No.:
- AUIRF7736M2TR
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- DirectFET™ Isometric M4
- Datasheet:
-
AUIRF7736M2TR.pdf
- Description:
- MOSFET N-CH 40V 22A DIRECTFET
- Quantity:
- Payment:
- Shipping:
Inventory:3,844
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Product details
Overview
AUIRF7736M2TR from Infineon is an automotive-grade N-channel Power MOSFET in DirectFET® M4 package, rated for 40V V(BR)DSS, 2.5mΩ RDS(on) typ. at 10V VGS, and 108A continuous drain current at TC = 25°C. It delivers high power density with dual-sided cooling, 175°C junction operation, and repetitive avalanche capability - deployed in motor drive and high-frequency DC-DC converters on ICE/HEV/EV platforms.
For engineers reviewing the AUIRF7736M2TR datasheet, AUIRF7736M2TR pinout, AUIRF7736M2TR application, or AUIRF7736M2TR equivalent, key selection criteria include low gate charge (72nC), ultra-low profile (0.7mm), SO-8 footprint compatibility, thermal resistance RθJ-Can of 2.4°C/W, and automotive qualification per AEC-Q101.
Technical Context
This MOSFET integrates HEXFET® silicon with DirectFET® M4 packaging to achieve simultaneous low RDS(on) (2.5mΩ) and low Qg (72nC), enabling high-efficiency switching in hard-switched and synchronous rectification topologies. Its 175°C TJ rating and 432A pulsed drain current support robust operation under transient overload conditions.
The device features a thermally optimized copper-can structure with exposed drain on both top and bottom surfaces, enabling PCB-side and heatsink-side cooling. Its body diode exhibits 35ns trr and 38nC Qrr at 65A, supporting fast-recovery requirements in bidirectional power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 40V - Ensures safe operation in 12V/24V automotive battery systems with load-dump margin. |
| RDS(on) typ. | 2.5mΩ @ VGS = 10V, ID = 65A - Minimizes conduction loss in high-current motor phases and DC-DC primary switches. |
| Qg | 72nC - Enables efficient gate driving with moderate-power drivers while maintaining <43ns rise time. |
| ID (TC = 25°C) | 108A - Silicon-limited continuous current supports peak loads in traction inverters and starter-generators. |
| TJ max | 175°C - Allows sustained operation in engine bay environments without derating below ambient +150°C. |
| EAS (tested) | 286mJ - Confirmed unclamped inductive switching robustness for fault-tolerant motor control designs. |
| RθJ-Can | 2.4°C/W - Enables direct thermal coupling to heatsinks or metal-core PCBs for dual-sided cooling paths. |
Pinout & Package
Package: DirectFET® M4 - ultra-low-profile (0.7mm), copper-can package with SO-8 footprint (5.0 × 6.0 mm), top-side drain and bottom-side drain/source terminals. Compatible with standard SMT reflow profiles (peak 270°C).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal | Exposed pad on side edge; requires low-inductance gate loop layout to minimize ringing during 108A switching. |
| D (Drain) | High-side power path | Top and bottom copper can surfaces - must be soldered to large copper pour or heatsink for thermal management. |
| S (Source) | Low-side return path | Bottom-side source pads - used for Kelvin sensing or low-impedance source connection in high-di/dt applications. |
Key Features
| Feature | Design Value |
|---|---|
| Dual-sided cooling interface | Top and bottom drain surfaces enable simultaneous PCB and heatsink thermal paths, reducing RθJA by up to 50% vs. PQFN. |
| Repetitive avalanche rated | Validated for repeated unclamped inductive switching (EAS = 54mJ thermally limited, 286mJ tested) without degradation. |
| AEC-Q101 qualified | Qualified for automotive under temperature cycling, HTRB, UHAST, and ESD (HBM 2kV) per JEDEC standards. |
| Low-profile SO-8 footprint | 5.0 × 6.0 mm outline with 0.7 mm height - fits legacy layouts while delivering >2× power density of SO-8 MOSFETs. |
| Optimized for heavy-load switching | Low Crss (422pF) and high gfs (115S) enable fast, stable switching in 100kHz–500kHz DC-DC and motor phase legs. |
Applications
| Electric Power Steering (EPS) | 48V Mild Hybrid DC-DC Converter |
|---|---|
|
Use Scenario: High-current H-bridge driver for brushless EPS motor, operating continuously at 80A peak with frequent direction reversal. IC Role / Device Role / Timing Role: N-channel high-side and low-side switch in three-phase inverter stage; handles PWM switching at 20–40kHz. Use Value: 2.5mΩ RDS(on) reduces conduction loss by 35% vs. comparable SO-8 MOSFETs, lowering heatsink mass by 40% in space-constrained steering column modules. |
Use Scenario: Primary-side synchronous rectifier in bi-directional 48V–12V DC-DC converter for 48V battery management in mild hybrids. IC Role / Device Role / Timing Role: Low-side switch in synchronous buck topology; conducts 100A+ during high-duty-cycle regeneration events. Use Value: 72nC Qg and 43ns rise time enable efficient zero-voltage switching (ZVS) assist, improving full-load efficiency to >96.5% at 3kW. |
| Start-Stop Battery Management System | Traction Inverter Auxiliary Stage |
|
Use Scenario: Load switch controlling 12V auxiliary bus during engine cranking, subject to 150A surge currents and reverse battery transients. IC Role / Device Role / Timing Role: Single-pole, double-throw (SPDT) configured as high-side protection switch with integrated body diode reverse-blocking. Use Value: 175°C TJ rating and 432A pulsed current capability ensure reliable operation during cold-crank events without thermal shutdown. |
Use Scenario: Isolated gate driver supply rail switch in auxiliary power stage of EV traction inverter, powering isolated gate drivers and sensors. IC Role / Device Role / Timing Role: High-reliability power switch feeding 15V/2A isolated DC-DC; operates continuously at 22A ambient-limited current. Use Value: Dual-sided cooling maintains <115°C case temperature at full load, eliminating need for forced air in sealed inverter enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IAUZ40N04S5L036 | 40V, 3.6mΩ RDS(on), 80A ID, TSD package (TO-263-7L) | Larger footprint (10.2 × 15.4 mm), single-sided cooling only, higher RθJA (12.5°C/W) | Preferred where board space allows and thermal interface is limited to one side; lower cost but lower power density. |
| IPB180N04S4-02 | 40V, 2.0mΩ RDS(on), 180A ID, TO-263-7L package | Higher current rating but 1.7mm height, no dual-sided cooling, requires larger heatsink area | Selected when peak current >120A is required and thermal budget permits thicker mechanical stack-up. |
Compared with IAUZ40N04S5L036 and IPB180N04S4-02, AUIRF7736M2TR provides superior power density (5.0 × 6.0 mm × 0.7 mm) and thermal flexibility (dual-sided cooling), making it optimal for compact, thermally constrained automotive modules where layout space and height are critical.
Availability
AUIRF7736M2TR is available at Aetrix Electronics and suitable for electric power steering, 48V mild hybrid DC-DC conversion, and start-stop battery management systems requiring stable component supply across multi-year automotive production cycles.
Supply support for AUIRF7736M2TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.
The AUIRF7736M2TR belongs to Infineon's Automotive DirectFET® Power MOSFET product line, engineered specifically for high-current, high-temperature automotive power stages where footprint, thermal performance, and AEC-Q101 reliability are mandatory.
FAQ
What is the maximum allowable gate voltage for AUIRF7736M2TR?
The absolute maximum VGS rating is ±20V. Operation above ±16V risks gate oxide damage, while gate drive below 4.0V may not fully enhance the channel due to VGS(th) range of 2.0–4.0V. Recommended gate drive is 10V–15V for optimal RDS(on) and switching speed balance.
Does AUIRF7736M2TR support bidirectional current flow in its body diode?
Yes - the integrated p-n body diode supports reverse conduction up to 108A continuous (IS) and 432A pulsed (ISM), with 35ns trr and 1.3V VSD at 65A and 25°C. This enables use in synchronous rectification and regenerative braking paths without external diodes.
How is thermal performance measured for the DirectFET® M4 package?
Thermal resistance is specified as RθJ-Can = 2.4°C/W (junction-to-can), measured with thermocouple on top drain surface. RθJA varies by mounting: 60°C/W on 1-in² Cu board, 12.5°C/W with dual-sided cooling and heatsink - values confirmed per JEDEC JESD51-14 and application note AN-1035.
Is AUIRF7736M2TR compatible with lead-free reflow processes?
Yes - the device is RoHS and halogen-free, qualified for peak reflow temperatures up to 270°C per IPC/JEDEC J-STD-020. The DirectFET® M4 package uses matte tin plating and withstands vapor phase, infrared, and convection soldering when stencil and substrate guidelines in AN-1035 are followed.
AUIRF7736M2TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- DirectFET™ Isometric M4
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 22A (Ta), 108A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3mOhm @ 65A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs:
- 108 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4267 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 63W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DirectFET™ Isometric M4
AUIRF7736M2TR FAQ
1.How can I place an order for AUIRF7736M2TR through Aetrix?
Please submit a Request for Quotation (RFQ) for AUIRF7736M2TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AUIRF7736M2TR reliable?
The price and inventory of AUIRF7736M2TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF7736M2TR is usually 5 days.
3.What payment methods are accepted for AUIRF7736M2TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF7736M2TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AUIRF7736M2TR?
AUIRF7736M2TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AUIRF7736M2TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AUIRF7736M2TR?
For technical support, including AUIRF7736M2TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF7736M2TR requirements.
6.How does Aetrix verify that AUIRF7736M2TR is sourced from the original manufacturer or authorized distributors?
All AUIRF7736M2TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF7736M2TR meets industry standards.
7.What is the process for return or replacement of AUIRF7736M2TR?
All AUIRF7736M2TR units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF7736M2TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AUIRF7736M2TR part is unused and in its original packaging.
Return procedure for AUIRF7736M2TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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