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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRF7769L2TR

Name: AUIRF7769L2TR
Brand: Infineon Technologies
SKU: AUIRF7769L2TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRF7769L2TR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric L8

Datasheet:: AUIRF7769L2TR.pdf

Description:: MOSFET N-CH 100V 375A DIRECTFET

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Product details

Overview

AUIRF7769L2TR from Infineon is an automotive-grade N-channel Power MOSFET in DirectFET® L8 package, rated for 100 V V(BR)DSS, 2.8 mΩ RDS(on) typ. at 10 V VGS, 124 A ID (silicon-limited), 200 nC Qg, and 175 °C TJ max. It serves as a high-current switching element in motor drive inverters and high-frequency DC-DC converters on ICE, HEV, and EV platforms.

For engineers reviewing the AUIRF7769L2TR datasheet, AUIRF7769L2TR pinout, AUIRF7769L2TR application, or AUIRF7769L2TR equivalent, this page delivers verified thermal metrics (RθJ-Can = 1.2 °C/W), dual-sided cooling capability, repetitive avalanche rating (EAS = 260 mJ), and automotive qualification per AEC-Q101.

Technical Context

This MOSFET employs HEXFET® silicon with optimized cell pitch and trench gate geometry to achieve low RDS(on) × Qg figure-of-merit (2.8 mΩ × 200 nC). Its DirectFET® L8 packaging integrates top-side drain metallization and bottom-side source terminals, enabling simultaneous PCB-side and heatsink-side thermal paths.

The device features a 2.7 V typical VGS(th) with negative temperature coefficient (−10 mV/°C), gfs = 410 S at VDS = 25 V, and robust body diode performance (trr = 75 ns, Qrr = 220 nC). It supports unclamped inductive switching up to 500 A IDM with guaranteed repetitive avalanche operation under defined thermal constraints.

Key Specifications

Parameter	Value and Actual Design Meaning
V(BR)DSS	100 V - Withstands 100 V drain-source blocking voltage before avalanche onset, suitable for 48 V and 60 V nominal automotive bus systems.
RDS(on) typ.	2.8 mΩ @ VGS = 10 V, ID = 74 A - Enables <1.5 W conduction loss at 74 A, critical for high-efficiency traction inverters.
ID (Silicon Limited)	124 A @ TC = 25°C - Maximum continuous current limited by silicon thermal capacity, not package.
Qg (typical)	200 nC - Gate charge determines driver power requirement and switching speed; enables fast turn-on with moderate gate drive strength.
TJ Operating Range	−55 °C to +175 °C - Supports under-hood placement in engine compartments and traction inverters without derating.
EAS	260 mJ - Single-pulse avalanche energy rating ensures robustness against inductive load transients in motor control.
RθJ-Can	1.2 °C/W - Low junction-to-can thermal resistance enables efficient heat transfer to external heatsink via top-side cooling.
Package	DirectFET® L8 - Isometric metal-can package with DPak footprint (TO-252AA compatible layout) and 0.7 mm profile for space-constrained modules.

Pinout & Package

DirectFET® L8 is a surface-mount metal-can package with top-side drain (D), bottom-side source (S), and perimeter gate (G) terminals. Its isometric outline allows dual-sided cooling: heat flows vertically through the top drain pad to heatsink and laterally through bottom source pads to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Perimeter-plated terminal accepting standard gate drivers; low RG = 1.5 Ω internal resistance minimizes Miller effect.
D (Drain)	High-side power output	Top-side exposed metal pad-primary thermal path to heatsink; electrically connected to drain silicon die.
S (Source)	Power return / reference	Bottom-side copper pads-soldered to PCB ground plane; provides low-inductance return path and secondary thermal path.

Key Features

Feature	Design Value
Dual-sided cooling architecture	Simultaneous top (drain-to-heatsink) and bottom (source-to-PCB) thermal paths reduce total thermal resistance by >40% vs. standard SO-8.
Repetitive avalanche capability	Rated for repeated unclamped inductive switching (IAS = 74 A, EAS = 260 mJ) without degradation-critical for motor phase-leg protection.
175 °C junction-rated silicon	Enables operation in high-ambient zones (e.g., near powertrain) without forced air or liquid cooling derating.
Low parasitic parameters	Ciss = 11560 pF, Crss = 590 pF, and Qgd/Qg ratio ≈ 55% support high dV/dt immunity and clean switching in 100 kHz+ DC-DC stages.
AEC-Q101 qualified	Validated for automotive use including HTOL, TC, UHAST, and ESD testing-ensures reliability over 15-year vehicle lifetime.

Applications

Electric Power Steering (EPS) Inverter

48 V Mild Hybrid DC-DC Converter

Use Scenario: High-efficiency bidirectional H-bridge driving 3-phase EPS motor at 20–40 kHz PWM frequency.

IC Role / Device Role / Timing Role: Low-side and high-side switching element handling peak currents up to 124 A with minimal conduction loss.

Use Value: 2.8 mΩ RDS(on) reduces I²R losses by >30% vs. legacy 4.5 mΩ devices, lowering module temperature rise and enabling smaller heatsinks.

Use Scenario: Synchronous rectification stage in 48 V–12 V bi-directional buck-boost converter for mild hybrid energy recovery.

IC Role / Device Role / Timing Role: Primary power switch operating at 100–200 kHz with fast turn-off (tf = 41 ns) to minimize dead-time losses.

Use Value: 200 nC Qg and low Crss enable clean zero-voltage switching (ZVS) transitions, improving efficiency above 95% at full load.

Traction Inverter Half-Bridge Module

Start-Stop Battery Management System

Use Scenario: Phase-leg switch in 200–400 V traction inverter for P2/P3 hybrid architectures requiring high pulse current capability.

IC Role / Device Role / Timing Role: Silicon-limited 124 A continuous switch with 500 A pulsed rating (IDM), supporting high-torque launch conditions.

Use Value: Repetitive avalanche rating (EAR) and 175 °C TJ allow safe operation during short-circuit fault events without immediate shutdown.

Use Scenario: High-current load switch isolating 12 V starter battery from auxiliary loads during engine cranking.

IC Role / Device Role / Timing Role: Robust power FET handling 100 A inrush and sustaining 375 A package-limited surge (PD = 125 W @ TC = 25°C).

Use Value: RθJ-Can = 1.2 °C/W enables direct mounting to aluminum chassis, eliminating discrete heatsink and reducing BOM count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IAUZ40N10S5L120ATMA1	100 V, 40 A, RDS(on) = 12.0 mΩ, TSD = −55 to +175 °C, PG-HSOF-8 package	Lower current rating and higher RDS(on); suited for auxiliary loads, not main traction or EPS	Select when board space is constrained and peak current ≤40 A; not suitable for 124 A silicon-limited operation.
IPB180N10N3GATMA1	100 V, 180 A, RDS(on) = 3.1 mΩ, TO-263-7 package, RθJA = 20 °C/W	Higher current, larger footprint, single-sided cooling only; no top-side drain for dual thermal path	Choose for maximum current headroom where PCB real estate permits and top-side heatsinking is unavailable.

Compared with IAUZ40N10S5L120ATMA1, AUIRF7769L2TR delivers 3× higher continuous current and 4.3× lower RDS(on); versus IPB180N10N3GATMA1, it offers 0.7 mm profile and dual-sided cooling but trades 56 A peak current for superior thermal integration in ultra-thin modules.

Availability

AUIRF7769L2TR is available at Aetrix Electronics and suitable for electric power steering inverters, 48 V mild hybrid DC-DC converters, and traction inverter half-bridge modules requiring stable component supply across multi-year automotive production cycles.

Supply support for AUIRF7769L2TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global manufacturing and qualification infrastructure.

This part belongs to the Automotive HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in electrified powertrain systems-including EPS, DC-DC, and traction inverters-where thermal density and transient robustness are critical.

FAQ

What is the maximum continuous drain current for AUIRF7769L2TR at 100°C case temperature?

The maximum continuous drain current is 88 A at TC = 100°C and VGS = 10 V, limited by silicon thermal capacity. This value is derived from the derating curve in Figure 12 and reflects safe operation without exceeding 175°C junction temperature under steady-state conditions with adequate heatsinking.

Does AUIRF7769L2TR support dual-sided cooling, and how is it implemented?

Yes-it supports dual-sided cooling via its DirectFET® L8 package: the top-side drain pad transfers heat directly to an external heatsink, while bottom-side source pads conduct heat into the PCB copper plane. This configuration achieves RθJ-PCB = 0.5 °C/W and RθJ-Can = 1.2 °C/W, enabling >2× thermal performance vs. conventional SO-8 packages.

What is the significance of the 260 mJ EAS rating?

The 260 mJ single-pulse avalanche energy rating quantifies the device's ability to absorb inductive energy during unclamped switching events-such as motor phase short circuits-without failure. It is measured at TJ = 25°C with L = 0.09 mH and RG = 25 Ω, ensuring robustness in automotive motor control applications where fault transients are unavoidable.

Is AUIRF7769L2TR compliant with RoHS and halogen-free standards?

Yes-the device is lead-free, RoHS-compliant (2011/65/EU), and halogen-free per IEC 61249-2-21. This compliance is confirmed in the official Infineon datasheet revision 2015-10-05 and applies to all material content, including mold compound, leadframe, and plating layers.

AUIRF7769L2TR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric L8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 375A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.5mOhm @ 74A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 300 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 11560 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.3W (Ta), 125W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DirectFET™ Isometric L8

AUIRF7769L2TR FAQ

1.How can I place an order for AUIRF7769L2TR through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRF7769L2TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRF7769L2TR reliable?

The price and inventory of AUIRF7769L2TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF7769L2TR is usually 5 days.

3.What payment methods are accepted for AUIRF7769L2TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF7769L2TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRF7769L2TR?

AUIRF7769L2TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRF7769L2TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRF7769L2TR?

For technical support, including AUIRF7769L2TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF7769L2TR requirements.

6.How does Aetrix verify that AUIRF7769L2TR is sourced from the original manufacturer or authorized distributors?

All AUIRF7769L2TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF7769L2TR meets industry standards.

7.What is the process for return or replacement of AUIRF7769L2TR?

All AUIRF7769L2TR units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF7769L2TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRF7769L2TR part is unused and in its original packaging.

Return procedure for AUIRF7769L2TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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