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Infineon Technologies AUIRFB8407

Part No.:
AUIRFB8407
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixAUIRFB8407.pdf
Description:
MOSFET N-CH 40V 195A TO220AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,000

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Product details

Overview

AUIRFB8407 from Infineon Technologies is an automotive-grade N-channel HEXFET® Power MOSFET in TO-220AB package, rated for 40 V VDS, 195 A continuous drain current (package-limited), 1.6 mΩ typical RDS(on) at VGS = 10 V, and 175°C maximum junction temperature. It serves as a high-current, low-loss main switch in battery disconnect and electric power steering systems.

For engineers reviewing the AUIRFB8407 datasheet, AUIRFB8407 pinout, AUIRFB8407 application, or AUIRFB8407 equivalent, key selection criteria include its 1.6 mΩ on-resistance at 10 V gate drive, 175°C thermal rating, repetitive avalanche capability up to Tjmax, fast switching (td(on) = 19 ns, tf = 53 ns), and AEC-Q101 qualification for automotive safety-critical loads.

Technical Context

This MOSFET employs advanced silicon processing to achieve ultra-low on-resistance per die area while maintaining robust avalanche performance. Its body diode exhibits 1.0–1.3 V forward voltage and 30 ns reverse recovery time at 100 A, supporting synchronous rectification and bidirectional energy handling in DC-DC converters.

The device features a 2.2 Ω internal gate resistance and 150–225 nC total gate charge, enabling controlled turn-on/turn-off with standard gate drivers. Thermal design is supported by 0.65 °C/W junction-to-case resistance and validated operation under pulsed avalanche stress up to 1000 mJ at Tj = 25°C.

Key Specifications

ParameterValue and Actual Design Meaning
VDS40 V - Maximum blocking voltage for 12 V/24 V automotive battery systems with margin against load dump transients.
RDS(on) typ.1.6 mΩ @ VGS = 10 V - Enables <1.6 W conduction loss at 100 A, critical for EPS and start-stop battery switches.
ID cont. (TC=25°C)195 A - Package-limited current defines safe continuous operation with heatsink; exceeds silicon limit of 250 A.
EAS tested1000 mJ - Validated single-pulse avalanche energy ensures reliability during inductive turn-off in motor drives.
Qg150–225 nC - Gate charge range determines driver strength requirement; supports efficient PWM at 20–100 kHz.
TJ max175°C - Enables operation in under-hood environments without derating below ambient +150°C.
Ciss7330 pF - Input capacitance impacts gate drive loop stability and EMI filtering requirements in high-frequency switching.

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-pin through-hole mounting. Case-to-sink thermal resistance is 0.50 °C/W with greased flat surface.

Pin/TerminalCircuit RoleDesign Meaning
G (Gate)Control inputReceives 10 V logic-level drive; 2.2 Ω internal resistance damps ringing and reduces EMI risk.
D (Drain)High-side power pathConnected to tab; requires isolation from heatsink unless system ground reference permits direct mounting.
S (Source)Power return / reference nodeServes as local ground for gate driver; low-inductance layout essential to minimize shoot-through risk.

Key Features

FeatureDesign Value
Ultra-low RDS(on)1.6 mΩ typ. at 10 V - Reduces conduction losses by >30% vs. legacy 40 V MOSFETs in 200 A battery switches.
AEC-Q101 qualifiedAutomotive grade per AEC-Q101-005 - Validated for lifetime operation in EPS, micro-hybrid, and DC-DC modules.
Repetitive avalanche ratedUp to Tjmax - Allows safe operation during inductive flyback without external snubbers in motor control.
175°C junction ratingExtended thermal margin - Supports compact thermal design in space-constrained engine bay locations.
Lead-free & RoHS compliantMSL1 moisture sensitivity - Eliminates baking requirements and enables standard reflow or hand-soldering processes.

Applications

Electric Power Steering (EPS)Battery Disconnect Switch

Use Scenario: High-current motor phase switching in column-assist or rack-assist EPS modules.

IC Role / Device Role / Timing Role: Main N-channel high-side power switch controlling 12 V/24 V battery feed to brushless motor inverter.

Use Value: 1.6 mΩ RDS(on) limits I²R loss to <1.6 W at 100 A, reducing heatsink size and improving system efficiency by ≥2.5% over 2.2 mΩ alternatives.

Use Scenario: Isolation of auxiliary battery banks during vehicle start-stop cycles.

IC Role / Device Role / Timing Role: Bidirectional load switch managing current flow between starter battery and secondary Li-ion or lead-acid storage.

Use Value: 1000 mJ avalanche energy rating prevents failure during sudden load dump or regenerative braking events without added clamping circuitry.

Start-Stop Micro-HybridHigh-Current DC-DC Converter

Use Scenario: Controlling alternator output to dual-battery architecture during engine restart.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier or high-side main switch in buck-boost converter stage.

Use Value: 175°C Tjmax allows sustained 150 A operation at 85°C ambient without derating-critical for under-hood placement near engine block.

Use Scenario: Primary switch in 48 V–12 V bidirectional DC-DC converter for mild hybrid systems.

IC Role / Device Role / Timing Role: High-frequency (50–100 kHz) hard-switched power transistor with integrated body diode for freewheeling.

Use Value: 30 ns trr and 24 nC Qrr minimize reverse recovery losses, improving converter efficiency by 1.2–1.8% versus standard 40 V MOSFETs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 40 V automotive power switch applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STL220N4F7AG220 A ID, 0.75 mΩ RDS(on), DFN5x6 package, no isolated tabSurface-mount only; requires PCB copper area for thermal management instead of heatsink mountingSelect when board space is constrained and thermal interface uses copper pour rather than mechanical heatsink.
IXTH180N40L2180 A ID, 2.0 mΩ RDS(on), TO-247 package, higher Qg (320 nC)Larger footprint and higher gate drive demand; better suited for lower-frequency, higher-voltage margin designsSelect when system prioritizes ruggedness over switching speed and gate drive simplicity is less critical.

Compared with STL220N4F7AG and IXTH180N40L2, the AUIRFB8407 delivers optimal balance of low RDS(on), proven TO-220 thermal interface, and AEC-Q101-compliant avalanche robustness-making it preferred for mechanically mounted, high-reliability automotive switches where gate drive efficiency and heatsink compatibility are primary concerns.

Availability

AUIRFB8407 is available at Aetrix Electronics and suitable for Electric Power Steering (EPS), Battery Disconnect Switch, and Start-Stop Micro-Hybrid systems requiring stable component supply across multi-year automotive production programs.

Supply support for AUIRFB8407 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

The AUIRFB8407 belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-current, high-reliability switching in engine compartment and chassis-mounted automotive subsystems.

FAQ

Is AUIRFB8407 suitable for synchronous rectification in 48 V–12 V DC-DC converters?

Yes. Its 1.0–1.3 V body diode forward voltage, 30 ns reverse recovery time, and 24 nC Qrr at 100 A enable efficient synchronous rectification. The 175°C junction rating supports continuous 150 A operation in thermally demanding converter topologies without forced air cooling.

What is the recommended gate resistor value for hard-switched 20 kHz operation?

A 10–15 Ω series gate resistor is recommended to damp ringing and limit peak gate current while maintaining td(on) ≤ 25 ns and tf ≤ 60 ns. This balances switching loss reduction against EMI control and driver thermal loading for continuous 100 A operation.

Does AUIRFB8407 require a heatsink in a 195 A continuous application?

Yes. With RθJC = 0.65 °C/W and 1.6 mΩ RDS(on), conduction loss at 195 A is ~60 W. To maintain Tj ≤ 175°C at 85°C ambient, a heatsink with RθSA ≤ 0.45 °C/W is required-achievable with a 100 mm × 100 mm × 25 mm aluminum finned heatsink and thermal grease.

How does its avalanche rating compare to non-automotive 40 V MOSFETs?

AUIRFB8407 is tested to 1000 mJ single-pulse avalanche energy at Tj = 25°C and rated for repetitive avalanche up to Tjmax, unlike commercial-grade equivalents that specify only "not rated" or "not guaranteed." This is validated per AEC-Q101 test conditions and documented in IR Application Note AN-1005.

AUIRFB8407 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
195A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:
4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:
225 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
7330 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
230W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB

AUIRFB8407 FAQ

1.How can I place an order for AUIRFB8407 through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRFB8407 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRFB8407 reliable?

The price and inventory of AUIRFB8407 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRFB8407 is usually 5 days.

3.What payment methods are accepted for AUIRFB8407?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRFB8407 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRFB8407?

AUIRFB8407 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRFB8407 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRFB8407?

For technical support, including AUIRFB8407 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRFB8407 requirements.

6.How does Aetrix verify that AUIRFB8407 is sourced from the original manufacturer or authorized distributors?

All AUIRFB8407 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRFB8407 meets industry standards.

7.What is the process for return or replacement of AUIRFB8407?

All AUIRFB8407 units undergo pre-shipment inspection (PSI). If there is an issue with AUIRFB8407, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRFB8407 part is unused and in its original packaging.

Return procedure for AUIRFB8407:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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