Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies AUIRFP4568

Part No.:
AUIRFP4568
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-247-3
Datasheet:
AetrixAUIRFP4568.pdf
Description:
MOSFET N-CH 150V 171A TO247AC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:386

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

AUIRFP4568 from Infineon is an automotive-qualified N-channel enhancement-mode HEXFET® Power MOSFET in TO-247AC package, rated for 150 V VDS, 4.8 mΩ typ. RDS(on) at 10 V VGS, and 171 A continuous drain current at TC = 25°C. It delivers ultra-low conduction loss, 175°C junction operation, and robust repetitive avalanche capability-used in high-current DC-DC converters, motor control inverters, and automotive power distribution modules.

For engineers reviewing the AUIRFP4568 datasheet, AUIRFP4568 pinout, AUIRFP4568 application, or AUIRFP4568 equivalent, key selection criteria include its 150 V breakdown voltage, 4.8 mΩ on-resistance, 151 nC total gate charge, 175°C thermal rating, and TO-247AC mechanical compatibility with high-power heatsink mounting.

Technical Context

This MOSFET employs advanced planar silicon processing to minimize RDS(on) per die area while maintaining ruggedness under fast dv/dt (18.5 V/ns) and high di/dt conditions. Its body diode exhibits 110 ns reverse recovery time and 515 nC Qrr at 25°C, enabling efficient synchronous rectification and hard-switched topologies.

The device supports unclamped inductive switching up to 103 A avalanche current with thermally limited EAS = 763 mJ, and features a low 0.29 °C/W RθJC for direct case-to-heatsink thermal transfer-critical for sustained high-current automotive traction and battery disconnect applications.

Key Specifications

ParameterValue and Actual Design Meaning
VDS150 V - Withstands 150 V drain-source blocking voltage before avalanche onset, suitable for 48 V and 60 V nominal automotive bus systems.
RDS(on) typ.4.8 mΩ @ VGS = 10 V, ID = 103 A - Enables <1 W conduction loss at 100 A, reducing thermal load in high-efficiency power stages.
Qg151 nC max - Determines gate drive energy requirement; compatible with standard 1–2 A peak gate drivers in motor control ICs.
TJ max+175°C - Allows operation in engine bay environments without derating, supporting ASIL-B system-level reliability.
EAS763 mJ - Single-pulse avalanche energy limit ensures safe turn-off during fault events like short-circuit or inductive kickback.
dv/dt rating18.5 V/ns - Resists false turn-on from high-speed voltage transients in noisy automotive power networks.
ID cont.171 A @ TC = 25°C - Supports high-current loads such as starter relays, HVAC blowers, and 48 V mild-hybrid DC/DC converters.

Pinout & Package

TO-247AC package with isolated metal tab (drain-connected), standard 3-pin vertical lead frame, and 1.1 N·m mounting torque specification. Designed for low-inductance PCB layout and direct heatsink attachment via M3 screw.

Pin/TerminalCircuit RoleDesign Meaning
G (Gate)Control terminalReceives 10 V logic-level signal to fully enhance channel; 1.0 Ω internal gate resistance limits ringing and simplifies driver design.
D (Drain)High-side power outputConnected to metal tab; electrically tied to heatsink-requires isolation pad or insulating hardware in non-floating designs.
S (Source)Power return / reference nodeServes as common return path for load current and gate drive reference; low-inductance source loop critical for EMI control.

Key Features

FeatureDesign Value
Ultra-low RDS(on)4.8 mΩ typ. reduces I²R losses by >35% vs. legacy 100 V MOSFETs in same package, directly improving system efficiency.
175°C junction ratingEnables full-rated current delivery in under-hood ambient temperatures up to +125°C without thermal derating.
Repetitive avalanche capabilityRated for repeated unclamped inductive switching up to TJmax, eliminating need for external snubbers in solenoid and relay drivers.
Fast body diode recovery110 ns trr and 515 nC Qrr support high-frequency synchronous rectification in bidirectional DC/DC converters.
Automotive qualificationQualified to AEC-Q101 standards with full traceability, lot-level PPAP documentation, and zero-defect manufacturing controls.

Applications

Automotive Starter Relay Driver48 V Mild-Hybrid DC/DC Converter

Use Scenario: High-current switching of starter solenoid coils in 12 V/48 V dual-battery architectures.

IC Role / Device Role / Timing Role: Main power switch controlling 150–200 A inrush current during engine cranking.

Use Value: 171 A continuous rating and 684 A pulsed capability ensure reliable engagement without thermal shutdown; 175°C rating prevents failure during repeated start-stop cycles.

Use Scenario: Primary-side high-side switch in bi-directional buck-boost converter linking 12 V and 48 V domains.

IC Role / Device Role / Timing Role: Hard-switched power transistor operating at 100–200 kHz with synchronous rectification on secondary side.

Use Value: Low 4.8 mΩ RDS(on) and 151 nC Qg enable >97% peak efficiency; fast dv/dt immunity prevents spurious turn-on during voltage transitions.

Electric Power Steering (EPS) InverterOn-Board Charger (OBC) Input Stage

Use Scenario: Three-phase inverter leg in 400–600 W EPS motor drive, mounted near steering column.

IC Role / Device Role / Timing Role: Low-side switching element in 60 kHz PWM-controlled H-bridge with integrated current sensing.

Use Value: 0.29 °C/W RθJC enables compact heatsinking; 18.5 V/ns dv/dt rating suppresses noise-induced shoot-through in high-noise motor environments.

Use Scenario: AC-DC PFC boost switch in 3.3 kW OBC front-end, exposed to high line transients and thermal cycling.

IC Role / Device Role / Timing Role: Critical conduction mode (CRM) boost switch handling 10–15 A RMS input current.

Use Value: Repetitive avalanche rating allows safe operation during grid voltage surges; 150 V VDS provides 20% margin over 120 VAC peak (170 V).

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STL220N10F7100 V VDS, 2.2 mΩ RDS(on), TO-247-4L package with Kelvin sourceLimited to ≤100 V systems; superior RDS(on) but lower voltage margin for 48 V transient protectionSelect when optimizing for lowest conduction loss in 48 V-only systems with Kelvin-source gate drive availability.
IXFH180N15T2150 V VDS, 5.2 mΩ RDS(on), 180 A ID, TO-247 package, no AEC-Q101 certificationHigher current rating but lacks automotive qualification and specified repetitive avalanche performanceAcceptable for industrial motor drives where AEC-Q101 is not required and thermal margin exceeds 175°C.

Compared with STL220N10F7 and IXFH180N15T2, the AUIRFP4568 uniquely balances 150 V rating, AEC-Q101 compliance, and verified repetitive avalanche behavior-making it the only choice for safety-critical automotive power switching where voltage margin, qualification, and ruggedness are jointly mandated.

Availability

AUIRFP4568 is available at Aetrix Electronics and suitable for automotive starter systems, 48 V mild-hybrid DC/DC converters, and electric power steering inverters requiring stable component supply across extended production lifecycles.

Supply support for AUIRFP4568 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global manufacturing and quality systems certified to IATF 16949.

The AUIRFP4568 belongs to Infineon's automotive-grade HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-current switching in engine compartment and chassis-mounted power electronics.

FAQ

What is the maximum continuous drain current for AUIRFP4568 at 100°C case temperature?

The AUIRFP4568 supports 121 A continuous drain current at TC = 100°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-247AC package and must be validated against actual heatsink performance and ambient conditions in the target application.

Does AUIRFP4568 have a Kelvin source connection?

No, the AUIRFP4568 uses a standard 3-pin TO-247AC configuration (G-D-S) without a dedicated Kelvin source terminal. Its gate drive loop relies on careful PCB layout to minimize source inductance; for applications requiring ultra-low gate oscillation, discrete gate resistors and tight source routing are recommended.

Is the body diode optimized for synchronous rectification?

Yes-the body diode has 110 ns reverse recovery time and 515 nC Qrr at 25°C, with soft recovery characteristics confirmed in Figures 17–20. These parameters support use in synchronous rectifier configurations up to 200 kHz, though external Schottky diodes may still be preferred for highest efficiency at light loads.

What is the gate threshold voltage range for AUIRFP4568?

The gate threshold voltage (VGS(th)) is specified from 3.0 V to 5.0 V at ID = 250 µA, with typical values around 4.0 V at 25°C. Figure 16 shows it decreases with rising temperature, reaching ~3.3 V at 175°C-designers must ensure gate drive maintains ≥10 V to guarantee full enhancement across the full operating temperature range.

AUIRFP4568 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
150 V
Current - Continuous Drain (Id) @ 25°C:
171A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
5.9mOhm @ 103A, 10V
Vgs(th) (Max) @ Id:
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
227 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
10470 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
517W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-247AC

AUIRFP4568 FAQ

1.How can I place an order for AUIRFP4568 through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRFP4568 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRFP4568 reliable?

The price and inventory of AUIRFP4568 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRFP4568 is usually 5 days.

3.What payment methods are accepted for AUIRFP4568?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRFP4568 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRFP4568?

AUIRFP4568 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRFP4568 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRFP4568?

For technical support, including AUIRFP4568 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRFP4568 requirements.

6.How does Aetrix verify that AUIRFP4568 is sourced from the original manufacturer or authorized distributors?

All AUIRFP4568 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRFP4568 meets industry standards.

7.What is the process for return or replacement of AUIRFP4568?

All AUIRFP4568 units undergo pre-shipment inspection (PSI). If there is an issue with AUIRFP4568, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRFP4568 part is unused and in its original packaging.

Return procedure for AUIRFP4568:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

AUIRFP4568 Tags

  • AUIRFP4568
  • AUIRFP4568 PDF
  • AUIRFP4568 Datasheet
  • AUIRFP4568 Specifications
  • AUIRFP4568 Images
  • Infineon Technologies
  • Infineon Technologies AUIRFP4568
  • Buy AUIRFP4568
  • AUIRFP4568 Price
  • AUIRFP4568 Distributor
  • AUIRFP4568 Supplier
  • AUIRFP4568 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER