Infineon Technologies AUIRFR3806TRL
- Part No.:
- AUIRFR3806TRL
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
AUIRFR3806TRL.pdf
- Description:
- MOSFET N-CH 60V 43A DPAK
- Quantity:
- Payment:

- Shipping:

Inventory:6,519
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
AUIRFR3806TRL from Infineon is an automotive-grade N-channel enhancement-mode HEXFET® Power MOSFET in D-Pak (TO-252AA) package, rated for 60 V VDS, 12.6 mΩ typical RDS(on) at VGS = 10 V and 25 A, 43 A continuous drain current at TC = 25°C, and 175°C maximum junction temperature - deployed in high-reliability engine control, DC-DC converters, and motor drive stages.
For engineers reviewing the AUIRFR3806TRL datasheet, AUIRFR3806TRL pinout, AUIRFR3806TRL application, or AUIRFR3806TRL equivalent, key selection criteria include its 24 V/ns diode recovery dv/dt rating, 7.1 mJ repetitive avalanche energy, 22 nC total gate charge, and automotive qualification per AEC-Q101 standards.
Technical Context
This MOSFET employs advanced planar silicon processing to achieve ultra-low on-resistance per die area while maintaining robust unclamped inductive switching capability. Its 175°C operating junction temperature and dynamic dV/dt rating support sustained operation in thermally constrained under-hood environments.
The device integrates a fast, low-loss body diode with 22 ns typical reverse recovery time at 25°C and 1.3 V forward voltage at 25 A, enabling efficient synchronous rectification and freewheeling in hard-switched topologies without external diode supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage before avalanche onset; supports 48 V automotive systems with margin against transients. |
| RDS(on) typ. | 12.6 mΩ @ VGS = 10 V, ID = 25 A - Enables <1.6 W conduction loss at 32 A, critical for thermal management in compact ECUs. |
| ID cont. @ TC = 25°C | 43 A - Sustained current handling with board-mounted heatsinking; defines PCB copper area and thermal pad design. |
| EAR | 7.1 mJ - Repetitive avalanche energy rating; allows safe operation during inductive turn-off without snubbers in motor phase legs. |
| Qg | 22 nC - Total gate charge determines driver strength requirement; enables <100 ns switching with 2 A peak gate driver. |
| trr | 22 ns @ TJ = 25°C - Fast body diode recovery minimizes commutation losses and EMI in half-bridge configurations. |
| RθJC | 2.12 °C/W - Junction-to-case thermal resistance confirms direct heatsink mounting capability for high-power density layouts. |
Pinout & Package
Package: D-Pak (TO-252AA), surface-mount, single-sided heatsinkable with exposed drain pad. Standard footprint per Infineon application note AN-994.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D) | Main power output terminal | Internally connected to exposed metal tab; must be soldered to large copper pour or heatsink for thermal and current path integrity. |
| Source (S) | Power return / reference node | Low-inductance connection point for current sensing and gate driver ground; shared with source of synchronous FET in half-bridge. |
| Gate (G) | Control input | High-impedance MOS control node; requires <0.79 Ω internal gate resistance and careful layout to avoid ringing during 22 nC charge/discharge. |
Key Features
| Feature | Design Value |
|---|---|
| Automotive qualification | AEC-Q101 qualified - Validated for temperature cycling, humidity, and mechanical shock in engine bay deployments. |
| Repetitive avalanche capability | 7.1 mJ @ TJ ≤ 175°C - Eliminates need for external clamping circuits in inductive load switching (e.g., fuel injectors, solenoids). |
| Dynamic dV/dt immunity | 24 V/ns - Prevents false turn-on during high-slew-rate noise events in noisy automotive power domains. |
| Ultra-low RDS(on) | 12.6 mΩ typ. - Reduces conduction loss by >30% vs. legacy 60 V MOSFETs, directly improving efficiency in 12 V/48 V DC-DC stages. |
| 175°C operation | Maximum TJ rating - Enables derating-free use in sealed enclosures where ambient exceeds 125°C (e.g., transmission control modules). |
Applications
| Engine Control Unit (ECU) Injector Driver | 48 V Mild Hybrid DC-DC Converter |
|---|---|
Use Scenario: High-speed switching of gasoline/diesel fuel injectors with 1–5 ms pulse widths and 12–48 V supply rails. IC Role / Device Role / Timing Role: Low-side switch controlling injector coil current; handles repetitive unclamped inductive flyback. Use Value: 7.1 mJ repetitive avalanche rating ensures reliable operation without snubber networks, reducing BOM count and board space. |
Use Scenario: Primary-side synchronous rectifier in bidirectional 48 V–12 V buck-boost converter for regenerative braking energy transfer. IC Role / Device Role / Timing Role: High-efficiency power switch in hard-switched topology; body diode conducts during dead-time. Use Value: 22 ns trr and 1.3 V VSD minimize conduction and recovery losses, increasing conversion efficiency by ≥1.2% at 10 kW. |
| Electric Power Steering (EPS) Motor Phase Leg | On-Board Charger (OBC) Auxiliary Power Supply |
Use Scenario: Half-bridge leg driving 3-phase brushless motor in torque-assist system with PWM frequencies up to 20 kHz. IC Role / Device Role / Timing Role: High-side or low-side switching element; subjected to high di/dt and voltage overshoot during commutation. Use Value: 24 V/ns dV/dt rating prevents spurious turn-on during fast voltage transitions, ensuring precise torque control and functional safety compliance. |
Use Scenario: Primary switch in auxiliary 12 V SMPS supplying control logic, sensors, and communication ICs within OBC module. IC Role / Device Role / Timing Role: Main power transistor in flyback or forward converter operating at 65–130 kHz with tight thermal constraints. Use Value: 2.12 °C/W RθJC enables direct heatsink mounting on metal-core PCB, achieving <85°C TJ at full load without forced air. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60 V automotive power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL100N6LF6 | RDS(on) = 9.5 mΩ typ., Qg = 32 nC, RθJC = 2.5 °C/W, AEC-Q101 qualified | Lower RDS(on) but higher gate charge increases driver loss; slightly worse thermal resistance limits peak power density | Prefer when lowest conduction loss dominates over switching loss and board space is unconstrained |
| IPB017N06N3 G | RDS(on) = 1.7 mΩ typ., Qg = 54 nC, TO-263 package, AEC-Q101 qualified | Substantially lower RDS(on) but larger package and higher gate charge demand stronger drivers and more layout area | Prefer for high-current (>60 A) traction inverters where thermal budget permits TO-263 mounting |
Compared with STL100N6LF6 and IPB017N06N3 G, AUIRFR3806TRL offers optimal balance of gate drive simplicity (22 nC), thermal performance (2.12 °C/W), and proven reliability in space-constrained automotive modules - making it preferred for ECU, EPS, and auxiliary power designs below 45 A.
Availability
AUIRFR3806TRL is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and 48 V mild hybrid DC-DC converters requiring stable component supply across extended production lifecycles.
Supply support for AUIRFR3806TRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification aligned to ISO/TS 16949.
AUIRFR3806TRL belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-temperature switching in engine, chassis, and electrification subsystems.
FAQ
Is AUIRFR3806TRL pin-compatible with standard D-Pak discrete MOSFETs?
Yes - AUIRFR3806TRL uses the industry-standard D-Pak (TO-252AA) outline with Drain-Source-Gate pin order (pin 1 = Gate, pin 2 = Drain, pin 3 = Source). Footprint matches JEDEC MS-012AC, and thermal pad layout follows Infineon AN-994 guidelines for 1"² FR-4 PCB mounting.
What is the maximum recommended gate drive voltage for AUIRFR3806TRL?
The absolute maximum VGS is ±20 V, but the device is characterized and optimized for 10 V gate drive. Driving above 12 V yields diminishing RDS(on) improvement while increasing gate oxide stress and risk of overvoltage failure during transients.
Does AUIRFR3806TRL require external gate resistors in automotive applications?
Yes - a series gate resistor (typically 5–22 Ω) is required to dampen ringing caused by PCB inductance interacting with the device's 0.79 Ω internal gate resistance and 1150 pF Ciss; omission risks shoot-through in half-bridge configurations and EMI exceedance in CISPR 25 Class 5 testing.
Can AUIRFR3806TRL replace older IRFR3806 variants in existing designs?
Yes - AUIRFR3806TRL is the automotive-qualified (AEC-Q101) version of IRFR3806, sharing identical pinout, RDS(on), and thermal specs. It adds enhanced process control, tighter parameter distributions, and extended temperature validation - making it a drop-in upgrade for legacy industrial designs transitioning to automotive production.
AUIRFR3806TRL Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 43A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 15.8mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs:
- 30 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1150 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 71W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
AUIRFR3806TRL FAQ
1.How can I place an order for AUIRFR3806TRL through Aetrix?
Please submit a Request for Quotation (RFQ) for AUIRFR3806TRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AUIRFR3806TRL reliable?
The price and inventory of AUIRFR3806TRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRFR3806TRL is usually 5 days.
3.What payment methods are accepted for AUIRFR3806TRL?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRFR3806TRL transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AUIRFR3806TRL?
AUIRFR3806TRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AUIRFR3806TRL order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AUIRFR3806TRL?
For technical support, including AUIRFR3806TRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRFR3806TRL requirements.
6.How does Aetrix verify that AUIRFR3806TRL is sourced from the original manufacturer or authorized distributors?
All AUIRFR3806TRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRFR3806TRL meets industry standards.
7.What is the process for return or replacement of AUIRFR3806TRL?
All AUIRFR3806TRL units undergo pre-shipment inspection (PSI). If there is an issue with AUIRFR3806TRL, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AUIRFR3806TRL part is unused and in its original packaging.
Return procedure for AUIRFR3806TRL:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
AUIRFR3806TRL Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

