Infineon Technologies AUIRFR4620TRL
- Part No.:
- AUIRFR4620TRL
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
AUIRFR4620TRL.pdf
- Description:
- MOSFET N-CH 200V 24A DPAK
- Quantity:
- Payment:

- Shipping:

Inventory:5,650
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
AUIRFR4620TRL from Infineon is an automotive-qualified N-channel D-Pak (TO-252AA) HEXFET® Power MOSFET with 200V V(BR)DSS, 64mΩ typ. RDS(on) at VGS = 10V and ID = 15A, 175°C maximum junction temperature, and 100A pulsed drain current. It serves as a high-efficiency main or synchronous rectifier switch in 12V/24V automotive power conversion systems including DC-DC converters and motor drivers.
For engineers reviewing the AUIRFR4620TRL datasheet, AUIRFR4620TRL pinout, AUIRFR4620TRL application, or AUIRFR4620TRL equivalent, key selection criteria include its 175°C thermal rating, 54 V/ns diode recovery dv/dt capability, repetitive avalanche energy support up to TJmax, and validated performance under automotive transient load conditions per AEC-Q101.
Technical Context
This MOSFET employs Infineon's advanced planar HEXFET process to achieve ultra-low on-resistance per die area while maintaining robust dynamic dV/dT immunity and fast switching (td(on) = 13.4 ns, tr = 22.4 ns). Its body diode supports high di/dt (up to 634 A/µs) and exhibits low Qrr (294 nC at TJ = 25°C) for reduced turn-off losses in hard-switched topologies.
The device features a thermally optimized D-Pak package with RθJC = 1.045°C/W, enabling high-power operation with case-mounted heatsinking. Repetitive avalanche is explicitly rated (IAR, EAR), and SOA curves confirm safe operation up to 100A pulsed drain current at TC = 25°C within defined pulse width and duty cycle limits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 200 V - Withstands 200V drain-source blocking voltage before breakdown, suitable for 12V/24V automotive bus applications with ISO 7637-2 pulse suppression margin. |
| RDS(on) typ. | 64 mΩ @ VGS = 10V, ID = 15A - Enables <1W conduction loss at 15A continuous, critical for thermally constrained engine bay modules. |
| ID @ TC = 25°C | 24 A - Continuous drain current rating under ideal heatsink conditions, defining maximum steady-state power delivery capability. |
| TJ max | +175°C - Junction temperature limit enabling reliable operation in under-hood environments without derating below ambient extremes. |
| Qg / Qgd | 25 nC / 7.9 nC - Low total and gate-drain charge reduce driver power requirements and improve switching efficiency in high-frequency (>100 kHz) converters. |
| dv/dt (diode) | 54 V/ns - High diode recovery dv/dt rating prevents false turn-on during commutation, essential for synchronous rectification in buck converters. |
| EAS | 113 mJ - Single-pulse avalanche energy rating allows safe clamping of inductive switching transients without external snubbers. |
Pinout & Package
D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal enhancement and mechanical stability. Standard footprint per Infineon package drawing IR-DP-01, compatible with IPC-7351B density level B.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path output terminal | Electrically and thermally connected to exposed copper pad; must be soldered to large PCB copper pour or heatsink for RθJC compliance. |
| Gate | Control input | High-impedance MOS gate requiring <2.6Ω internal resistance; driven by dedicated gate driver to minimize ringing and ensure clean 10V switching. |
| Source | Reference node for gate drive and current sensing | Common return path for load current and gate drive loop; layout must minimize inductance to suppress VGS oscillation during fast switching. |
Key Features
| Feature | Design Value |
|---|---|
| Automotive qualification | AEC-Q101 qualified with full traceability, supporting zero-defect reliability targets in safety-critical powertrain and chassis systems. |
| Repetitive avalanche rating | Rated for unlimited repetitive avalanche events up to TJmax, eliminating need for overvoltage protection circuits in inductive load switching. |
| Ultra-low RDS(on) | 64 mΩ typ. reduces I²R losses by >30% vs. legacy 200V MOSFETs, directly lowering thermal design burden in sealed enclosures. |
| Fast body diode recovery | trr = 78 ns (TJ = 25°C) and Qrr = 294 nC enable efficient synchronous rectification without cross-conduction risk in high-frequency DC-DC stages. |
| Lead-free & RoHS | Halogen-free, Pb-free construction compliant with automotive ELV Directive and JESD204B assembly standards. |
Applications
| Engine Control Unit (ECU) Power Stage | Automotive DC-DC Converter |
|---|---|
Use Scenario: High-side switch controlling fuel injector solenoid current in gasoline direct injection systems. IC Role / Device Role / Timing Role: Main power switch handling 12V/24V supply with 10–20A peak pulses at 1–10 Hz, requiring fast turn-off to prevent coil saturation. Use Value: 175°C rating ensures stable operation near hot engine block; 54 V/ns dv/dt immunity prevents spurious turn-on during rapid coil flyback. |
Use Scenario: Synchronous rectifier in 48V-to-12V bidirectional buck-boost converter for mild hybrid vehicles. IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating at 200–300 kHz, conducting 20–30A average current with minimal conduction loss. Use Value: 64 mΩ RDS(on) cuts conduction loss by ~40% vs. Schottky alternatives; low Qrr (294 nC) minimizes reverse recovery loss at high frequency. |
| Electric Power Steering (EPS) Motor Driver | Automotive LED Headlamp Driver |
Use Scenario: Half-bridge high-side switch driving 3-phase BLDC motor windings in EPS module. IC Role / Device Role / Timing Role: High-voltage, high-current switching element subjected to load dump transients and PWM commutation stress. Use Value: 200V V(BR)DSS provides margin against ISO 7637-2 Pulse 5a (load dump up to 110V); EAS = 113 mJ absorbs inductive kickback without failure. |
Use Scenario: Constant-current switch regulating high-brightness LED strings in adaptive front lighting systems (AFS). IC Role / Device Role / Timing Role: PWM-controlled current sink managing 1–5A LED loads with tight thermal constraints inside headlamp housing. Use Value: 175°C TJ max enables operation in confined space with ambient up to 125°C; low RDS(on) maintains <0.5W dissipation at 3A, avoiding active cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6F7 | 60V V(BR)DSS, 1.2mΩ RDS(on), TO-263 package - lower voltage rating, significantly lower RDS(on), larger package | Not suitable for 200V bus applications; only viable in 48V subsystems where ultra-low loss dominates | Select only if system voltage ≤60V and thermal budget permits TO-263 mounting; not a drop-in replacement |
| IXTP24N20P | 200V V(BR)DSS, 90mΩ RDS(on), TO-220 package - same voltage, higher on-resistance, through-hole mounting | Lacks AEC-Q101 qualification; no repetitive avalanche rating; unsuitable for under-hood vibration or thermal cycling | Acceptable only in non-automotive industrial designs with relaxed reliability and thermal requirements |
Compared with STL220N6F7 and IXTP24N20P, AUIRFR4620TRL uniquely combines AEC-Q101 qualification, 200V rating, 64mΩ on-resistance, and repetitive avalanche capability in a surface-mount D-Pak - making it the sole option for thermally demanding, safety-critical 12V/24V automotive power stages.
Availability
AUIRFR4620TRL is available at Aetrix Electronics and suitable for automotive power conversion, engine control unit (ECU) switching, and electric power steering (EPS) motor drivers requiring stable component supply across extended vehicle lifecycles.
Supply support for AUIRFR4620TRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification aligned to IATF 16949.
AUIRFR4620TRL belongs to Infineon's automotive-grade HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-temperature switching in engine bay and chassis control applications.
FAQ
Is AUIRFR4620TRL pin-compatible with standard D-Pak MOSFETs?
Yes - AUIRFR4620TRL uses the industry-standard D-Pak (TO-252AA) footprint with Drain-Source-Gate pin order (Tab-Source-Gate when viewed from top marking side). Its mechanical dimensions and solder pad layout match JEDEC MO-238, enabling direct PCB replacement for other D-Pak 200V N-channel MOSFETs with identical pinout.
What is the maximum recommended gate drive voltage?
The absolute maximum gate-to-source voltage is ±20V, but Infineon specifies optimal switching performance at VGS = 10V. Driving above 12V yields diminishing RDS(on) improvement while increasing gate oxide stress and risk of overvoltage damage during transients - 10V is the recommended nominal gate drive level.
Does AUIRFR4620TRL require a gate resistor for automotive applications?
Yes - a series gate resistor (typically 5–15Ω) is required to dampen parasitic oscillation, control dv/dt during switching, and limit peak gate current from drivers. Without it, ringing can exceed VGS(max) or cause shoot-through in half-bridge configurations, especially under high di/dt load conditions common in automotive motors.
Can AUIRFR4620TRL be used in parallel configurations?
Yes - its positive RDS(on) temperature coefficient (0.23 V/°C) enables inherent current sharing when paralleled. However, layout symmetry (matched gate and source inductance), individual gate resistors, and thermal coupling via shared heatsink are mandatory to ensure balanced current distribution and avoid thermal runaway.
AUIRFR4620TRL Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 78mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 38 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1710 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 144W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
AUIRFR4620TRL FAQ
1.How can I place an order for AUIRFR4620TRL through Aetrix?
Please submit a Request for Quotation (RFQ) for AUIRFR4620TRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AUIRFR4620TRL reliable?
The price and inventory of AUIRFR4620TRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRFR4620TRL is usually 5 days.
3.What payment methods are accepted for AUIRFR4620TRL?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRFR4620TRL transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AUIRFR4620TRL?
AUIRFR4620TRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AUIRFR4620TRL order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AUIRFR4620TRL?
For technical support, including AUIRFR4620TRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRFR4620TRL requirements.
6.How does Aetrix verify that AUIRFR4620TRL is sourced from the original manufacturer or authorized distributors?
All AUIRFR4620TRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRFR4620TRL meets industry standards.
7.What is the process for return or replacement of AUIRFR4620TRL?
All AUIRFR4620TRL units undergo pre-shipment inspection (PSI). If there is an issue with AUIRFR4620TRL, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AUIRFR4620TRL part is unused and in its original packaging.
Return procedure for AUIRFR4620TRL:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
AUIRFR4620TRL Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

