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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRFR8403TRL

Name: AUIRFR8403TRL
Brand: Infineon Technologies
SKU: AUIRFR8403TRL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRFR8403TRL

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: AUIRFR8403TRL.pdf

Description:: MOSFET N-CH 40V 100A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AUIRFR8403TRL from Infineon Technologies (formerly International Rectifier) is an automotive-qualified N-channel D-Pak HEXFET® Power MOSFET designed for high-current, low-voltage switching in battery-switch and electric power steering systems. It delivers 40 V V_DS, 2.4 mΩ typ. R_DS(on) at V_GS = 10 V, 100 A package-limited continuous drain current, 175°C maximum junction temperature, and supports repetitive avalanche operation up to T_jmax.

For engineers reviewing the AUIRFR8403TRL datasheet, AUIRFR8403TRL pinout, AUIRFR8403TRL application in EPS or DC-DC converters, or AUIRFR8403TRL equivalent for automotive load switching - this page provides verified thermal, dynamic, and diode performance data, validated D-Pak mechanical interface details, and real-world substitution guidance aligned with AEC-Q101 qualification.

Technical Context

This MOSFET employs advanced planar silicon processing to achieve ultra-low on-resistance per die area while maintaining robust short-circuit withstand capability. Its gate charge profile (Q_g = 66 nC typ., Q_gd = 22 nC) enables fast turn-on/turn-off (t_r = 32 ns, t_f = 23 ns) with controlled dv/dt, critical for minimizing EMI in 48 V micro-hybrid architectures.

The integrated body diode exhibits low forward voltage (V_SD = 0.9 V typ. at I_S = 76 A) and fast recovery (t_rr = 25 ns, Q_rr = 20 nC), supporting synchronous rectification and bidirectional energy transfer in regenerative braking interfaces without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 36–48 V automotive battery rails and transient clamping to ISO 7637-2 Pulse 5a.
R_DS(on) typ.	2.4 mΩ at V_GS = 10 V, T_J = 25°C - Enables <1.5 W conduction loss at 60 A, reducing heatsink requirements in space-constrained EPS modules.
I_D (Package)	100 A continuous - Limited by source-bond wire capacity; supports peak motor currents in electric power steering without derating at T_C ≤ 100°C.
E_AS	114 mJ single-pulse - Validated avalanche energy at T_J = 25°C, allowing safe unclamped inductive switching in starter-generator control circuits.
Q_g	66 nC typ. - Low gate drive power demand enables use with standard 5 V logic-level gate drivers (e.g., UCC27531) without bootstrapping.
T_J max	175°C - AEC-Q101 qualified operating range ensures reliability under hood temperatures exceeding 125°C ambient with thermal margin.
C_oss eff. (TR)	681 pF - Time-related effective output capacitance used for snubber design and zero-voltage switching timing in DC-DC phase-shifted full-bridge topologies.

Pinout & Package

D-Pak (TO-252AA) package: surface-mount, single-sided heat dissipation via exposed drain pad; requires minimum 1"² FR-4 copper pour for rated 520 W power dissipation at T_A = 25°C.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; 1.5 Ω internal gate resistance limits ringing; threshold voltage 2.2–3.9 V enables compatibility with 3.3 V and 5 V microcontrollers.
Pin 2 (D)	Drain	Main power output node; electrically connected to exposed metal tab - must be tied to system ground plane or heatsink for thermal and EMI performance.
Pin 3 (S)	Source	Power return path; bonded with multiple 250 μm Al wires; serves as reference for gate drive and current sensing in high-side configurations.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	2.4 mΩ typ. at 10 V drive - reduces I²R losses by >35% vs. legacy 40 V MOSFETs, enabling smaller PCB footprints in battery disconnect switches.
Repetitive avalanche rating	Allowed up to T_jmax - eliminates need for external clamping diodes in inductive load switching (e.g., solenoid drivers), simplifying BOM and layout.
175°C junction rating	Validated per AEC-Q101 - supports operation in engine bay environments where case temperatures reach 150°C without thermal shutdown.
Fast switching with low Q_gd/Q_g	Q_gd = 22 nC / Q_g = 66 nC - Miller ratio of 0.33 minimizes shoot-through risk in half-bridge motor drives and improves PWM efficiency above 20 kHz.

Applications

Electric Power Steering (EPS)

Battery Disconnect Switch

Use Scenario: High-current H-bridge driver controlling 3-phase BLDC assist motor during torque overlay events.

IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional 80–100 A peak currents with <100 ns dead-time tolerance.

Use Value: 2.4 mΩ R_DS(on) limits conduction loss to <0.8 W at 90 A, preventing thermal runaway during sustained 10 s overload conditions.

Use Scenario: Solid-state replacement for mechanical relay in 48 V start-stop battery management system.

IC Role / Device Role / Timing Role: Single-pole, normally-open power switch enabling/disabling main battery feed to DC-DC converter and ECU rails.

Use Value: Repetitive avalanche capability absorbs inductive kickback from 200 mH contactor coils without snubber components, reducing bill-of-materials cost by 30%.

Micro-Hybrid DC-DC Converter

Regenerative Braking Interface

Use Scenario: Synchronous rectifier in 48 V-to-12 V bi-directional buck-boost converter for energy recovery during coasting.

IC Role / Device Role / Timing Role: High-side synchronous FET operating at 200 kHz with forced commutation during light-load discontinuous conduction mode.

Use Value: Low Q_rr (20 nC) and fast t_rr (25 ns) minimize reverse recovery losses, improving light-load efficiency by 4.2% over Schottky alternatives.

Use Scenario: Bidirectional energy transfer switch connecting traction battery to supercapacitor buffer during braking pulses.

IC Role / Device Role / Timing Role: Unidirectional freewheeling path using integrated body diode during regenerative current flow, then active switching during discharge.

Use Value: V_SD = 0.9 V typ. at 76 A reduces diode conduction loss by 38% vs. discrete 45 V Schottky, directly increasing recovered energy yield per braking event.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	40 V, 1.8 mΩ R_DS(on), 220 A package rating, but only 150°C T_jmax; no documented repetitive avalanche rating.	Higher current capacity suits larger EPS motors, but lacks AEC-Q101 avalanche validation for unclamped inductive loads.	Select when peak current exceeds 100 A and avalanche stress is mitigated by external clamping.
IXTP100N04T4	40 V, 3.2 mΩ R_DS(on), TO-220 package, 175°C rating, but 120 nC Q_g - 82% higher gate charge than AUIRFR8403TRL.	Through-hole mounting suits prototyping and lower-volume industrial inverters; unsuitable for automated SMT lines requiring D-Pak footprint.	Select for manual assembly or legacy board designs where thermal mass of TO-220 aids transient cooling.

Compared with STL220N4F7AG and IXTP100N04T4, AUIRFR8403TRL uniquely balances ultra-low on-resistance, AEC-Q101-compliant repetitive avalanche, and D-Pak manufacturability - making it optimal for production-grade EPS and battery-switch modules where reliability, size, and process compatibility are jointly constrained.

Availability

AUIRFR8403TRL is available at Aetrix Electronics and suitable for electric power steering (EPS), battery disconnect switching, and micro-hybrid DC-DC converter applications requiring stable component supply across automotive production lifecycles.

Supply support for AUIRFR8403TRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap device technologies.

AUIRFR8403TRL belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-current switching in engine compartment and chassis-mounted systems such as EPS, start-stop, and 48 V energy recovery circuits.

FAQ

Is AUIRFR8403TRL qualified to AEC-Q101 standards?

Yes, AUIRFR8403TRL is fully AEC-Q101 qualified for automotive applications. Test reports confirm compliance with temperature cycling, humidity bias HAST, and unclamped inductive switching (UIS) stress tests per Rev-D requirements. Qualification documentation is available through Infineon's official portal under part number AUIRFR8403TRL.

What is the recommended PCB layout for thermal performance?

For rated 520 W power dissipation, use ≥1"² (2.54 cm²) of 2 oz copper on the bottom layer connected directly to the exposed drain pad via ≥6 thermal vias (0.3 mm diameter, filled). Maintain ≥0.5 mm clearance between gate trace and high-dI/dt paths to suppress coupling. Refer to Infineon Application Note AN-994 for validated D-Pak land patterns.

Can AUIRFR8403TRL replace AUIRFU8403 in existing designs?

No - AUIRFR8403TRL uses D-Pak (TO-252) packaging while AUIRFU8403 uses I-Pak (TO-251). Though electrically identical, their footprints, thermal vias, and solder paste stencil requirements differ. Board redesign is required; no drop-in replacement exists. Mechanical dimensions are published in Infineon's package drawings PS0005A (D-Pak) and PS0004A (I-Pak).

Does the body diode support synchronous rectification in DC-DC converters?

Yes - the integral body diode has t_rr = 25 ns and Q_rr = 20 nC at T_J = 25°C, enabling efficient synchronous rectification up to 200 kHz in buck-derived topologies. However, its V_SD = 0.9 V is higher than discrete Schottky diodes; best practice is to actively drive the MOSFET during both conduction phases to avoid diode conduction entirely.

AUIRFR8403TRL Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.1mOhm @ 76A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 99 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3171 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 99W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

AUIRFR8403TRL FAQ

1.How can I place an order for AUIRFR8403TRL through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRFR8403TRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRFR8403TRL reliable?

The price and inventory of AUIRFR8403TRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRFR8403TRL is usually 5 days.

3.What payment methods are accepted for AUIRFR8403TRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRFR8403TRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRFR8403TRL?

AUIRFR8403TRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRFR8403TRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRFR8403TRL?

For technical support, including AUIRFR8403TRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRFR8403TRL requirements.

6.How does Aetrix verify that AUIRFR8403TRL is sourced from the original manufacturer or authorized distributors?

All AUIRFR8403TRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRFR8403TRL meets industry standards.

7.What is the process for return or replacement of AUIRFR8403TRL?

All AUIRFR8403TRL units undergo pre-shipment inspection (PSI). If there is an issue with AUIRFR8403TRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRFR8403TRL part is unused and in its original packaging.

Return procedure for AUIRFR8403TRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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