Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies AUIRFS8409-7TRL

Part No.:
AUIRFS8409-7TRL
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-7, D2PAK (6 Leads + Tab)
Datasheet:
AetrixAUIRFS8409-7TRL.pdf
Description:
MOSFET N-CH 40V 240A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:164

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

AUIRFS8409-7TRL from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET® Power MOSFET in D2Pak-7L package, rated for 40 V VDS, 0.55 mΩ typ. RDS(on) at VGS = 10 V, and 240 A continuous drain current (package-limited). It integrates a fast, low-loss body diode and is optimized for high-current synchronous rectification in automotive DC-DC converters.

For engineers reviewing the AUIRFS8409-7TRL datasheet, AUIRFS8409-7TRL pinout, AUIRFS8409-7TRL application, or AUIRFS8409-7TRL equivalent, key selection criteria include its ultra-low on-resistance, 176 S forward transconductance, 305 nC total gate charge, avalanche-rated operation up to 175 °C, and AEC-Q101 qualification for automotive powertrain systems.

Technical Context

This MOSFET employs planar silicon-gate technology with optimized cell pitch and trench-assisted drift region design to achieve sub-1 mΩ on-resistance while maintaining robust unclamped inductive switching (UIS) capability. Its gate threshold voltage (2.2–3.9 V) enables compatibility with 3.3 V and 5 V logic-level drivers in high-side and low-side configurations.

The device features a thermally enhanced D2Pak-7L package with exposed source pad and integrated Kelvin source terminal, enabling accurate gate drive referencing and minimizing common-source inductance during high-di/dt switching. Its Coss,eff(TR) of 3306 pF supports efficient zero-voltage switching (ZVS) in resonant topologies.

Key Specifications

ParameterValue and Actual Design Meaning
VDS40 V - Maximum blocking voltage compatible with 12 V/24 V automotive battery rails and 48 V mild-hybrid systems.
RDS(on) typ.0.55 mΩ @ VGS = 10 V, TJ = 25 °C - Enables <1.5 W conduction loss at 100 A, critical for thermal management in compact power modules.
ID (pkg-lim)240 A @ TC = 25 °C - Package-limited current defines maximum steady-state output in PCB-mounted heatsink applications.
Qg305 nC max. - Gate drive energy requirement determines driver IC selection and switching loss trade-off in 100–500 kHz converters.
EAS764 mJ (tested) - Confirmed single-pulse avalanche energy supports reliable operation under load dump or short-circuit fault conditions.
TJ range−55 to +175 °C - AEC-Q101 qualified junction temperature range ensures functionality across engine bay and powertrain environments.

Pinout & Package

Package: D2Pak-7L (TO-263-7), thermally enhanced surface-mount package with isolated gate pad, Kelvin source terminal, and large copper-exposed drain tab for low-inductance, high-current PCB mounting.

Pin/TerminalCircuit RoleDesign Meaning
1 (G)GateMain control terminal; driven via low-impedance path to minimize Miller-induced shoot-through risk.
2 (S)Source (Power)Main current return path; connected to PCB ground plane for thermal and electrical performance.
3 (D)DrainHigh-current output node; electrically and thermally tied to exposed copper tab on bottom of package.
4 (SK)Kelvin SourceDedicated low-current sense path for gate driver feedback-decouples gate loop from power loop to suppress oscillation.
5 (G)Gate (redundant)Second gate connection for parallel routing; reduces gate loop inductance in high-frequency designs.
6 (D)Drain (redundant)Secondary drain connection to enhance current sharing and reduce package resistance.
7 (D)Drain (redundant)Third drain connection supporting >200 A continuous current with minimal voltage drop across internal bond wires.

Key Features

FeatureDesign Value
Ultra-low RDS(on)0.55 mΩ typ. enables <1.5 W conduction loss at 100 A, reducing heatsink size by ≥40% vs. comparable 1.2 mΩ devices.
Integrated Kelvin sourceDedicated SK terminal eliminates source inductance impact on gate control, improving switching stability above 200 kHz.
Avalanche-rated764 mJ tested EAS allows safe operation during unclamped inductive switching events without external snubbers.
AEC-Q101 qualifiedValidated for automotive powertrain use including engine control units, battery disconnect units, and 48 V DC-DC stages.

Applications

Automotive DC-DC ConvertersOn-Board Charger (OBC) Output Stage

Use Scenario: High-efficiency 12 V/48 V bidirectional buck-boost converter in 48 V mild-hybrid vehicles.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 200–300 kHz with precise dead-time control.

Use Value: 0.55 mΩ RDS(on) reduces conduction loss by 38% versus 0.89 mΩ alternatives, enabling >96.5% peak efficiency at 5 kW.

Use Scenario: Secondary-side synchronous rectification in 6.6 kW OBC AC/DC stage feeding traction battery.

IC Role / Device Role / Timing Role: High-current, low-VDS power switch handling 150–200 A continuous output current.

Use Value: D2Pak-7L package with three drain terminals sustains 240 A without derating, eliminating need for paralleling two devices.

Battery Disconnect Units (BDU)Electric Power Steering (EPS) Inverter

Use Scenario: Solid-state main contactor replacement in high-voltage battery protection circuits.

IC Role / Device Role / Timing Role: Normally-open high-side switch controlling 400 V battery access with active short-circuit protection.

Use Value: 764 mJ avalanche energy rating permits safe interruption of 500 A fault currents without destructive failure.

Use Scenario: Phase-leg low-side switch in 3-phase EPS motor inverter operating at ambient up to 125 °C.

IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET with body diode recovery time <50 ns for regenerative braking commutation.

Use Value: 50 ns trr and 59 nC Qrr minimize reverse recovery losses, reducing junction temperature rise by 12 °C vs. standard 120 ns diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STL220N4F7AG40 V, 0.42 mΩ typ., DFN8 5×6 mm package, no Kelvin sourceLimited to ≤100 A continuous due to smaller thermal footprint; unsuitable for >150 A board-level heatsinkingSelect only for space-constrained, lower-current auxiliary rails where Kelvin sensing is not required.
IXTH30N40P400 V, 0.12 Ω, TO-247 package, higher RDS(on), no AEC-Q101Designed for industrial SMPS-not qualified for automotive vibration, temperature cycling, or fault tolerance requirementsNot recommended for automotive use; consider only for non-automotive 40 V industrial DC-DC where qualification is waived.

Compared with STL220N4F7AG and IXTH30N40P, AUIRFS8409-7TRL uniquely combines automotive qualification, Kelvin-source stability, and 240 A package-limited current-making it the only option capable of replacing mechanical contactors in BDUs while maintaining ZVS in high-frequency OBCs.

Availability

AUIRFS8409-7TRL is available at Aetrix Electronics and suitable for automotive powertrain control, high-current DC-DC conversion, and battery protection systems requiring stable component supply across extended product lifecycles.

Supply support for AUIRFS8409-7TRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

AUIRFS8409-7TRL belongs to Infineon's automotive-qualified OptiMOS™ 5 family, engineered specifically for high-efficiency, high-reliability power conversion in 12 V, 24 V, and 48 V vehicle electrical architectures.

FAQ

What is the purpose of the Kelvin source (SK) pin on AUIRFS8409-7TRL?

The Kelvin source (Pin 4) provides a dedicated low-current return path for gate driver feedback, isolating the gate control loop from high di/dt power current paths. This eliminates voltage spikes induced by source inductance during switching transitions, preventing false turn-on and improving noise immunity in high-frequency (>200 kHz) synchronous rectifiers.

Can AUIRFS8409-7TRL be used in parallel configurations?

Yes-its positive temperature coefficient of RDS(on) and matched threshold voltage distribution enable stable current sharing. However, layout must ensure symmetrical gate drive, identical trace lengths, and shared thermal mass; the Kelvin source must be routed separately for each device to preserve gate loop integrity.

Is the body diode suitable for reverse recovery in hard-switched topologies?

Yes-the body diode exhibits trr = 50 ns and Qrr = 59 nC at TJ = 25 °C, making it viable for hard-switched 100–300 kHz applications. At 125 °C, trr increases to 58 ns and Qrr to 72 nC; soft-switching or active clamp is recommended above 250 kHz to limit diode loss.

Does AUIRFS8409-7TRL require gate resistors for automotive EMI compliance?

Yes-gate resistance directly controls dv/dt and di/dt. For CISPR 25 Class 5 compliance, typical RG values range from 2.2 Ω to 4.7 Ω (as specified in datasheet Fig. 25a), balancing EMI suppression against switching loss. Layout must minimize gate loop area and avoid coupling to sensitive analog traces.

AUIRFS8409-7TRL Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-263-7, D2PAK (6 Leads + Tab)
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
240A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
0.75mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:
3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
460 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
13975 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
375W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK (7-Lead)

AUIRFS8409-7TRL FAQ

1.How can I place an order for AUIRFS8409-7TRL through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRFS8409-7TRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRFS8409-7TRL reliable?

The price and inventory of AUIRFS8409-7TRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRFS8409-7TRL is usually 5 days.

3.What payment methods are accepted for AUIRFS8409-7TRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRFS8409-7TRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRFS8409-7TRL?

AUIRFS8409-7TRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRFS8409-7TRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRFS8409-7TRL?

For technical support, including AUIRFS8409-7TRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRFS8409-7TRL requirements.

6.How does Aetrix verify that AUIRFS8409-7TRL is sourced from the original manufacturer or authorized distributors?

All AUIRFS8409-7TRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRFS8409-7TRL meets industry standards.

7.What is the process for return or replacement of AUIRFS8409-7TRL?

All AUIRFS8409-7TRL units undergo pre-shipment inspection (PSI). If there is an issue with AUIRFS8409-7TRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRFS8409-7TRL part is unused and in its original packaging.

Return procedure for AUIRFS8409-7TRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

AUIRFS8409-7TRL Tags

  • AUIRFS8409-7TRL
  • AUIRFS8409-7TRL PDF
  • AUIRFS8409-7TRL Datasheet
  • AUIRFS8409-7TRL Specifications
  • AUIRFS8409-7TRL Images
  • Infineon Technologies
  • Infineon Technologies AUIRFS8409-7TRL
  • Buy AUIRFS8409-7TRL
  • AUIRFS8409-7TRL Price
  • AUIRFS8409-7TRL Distributor
  • AUIRFS8409-7TRL Supplier
  • AUIRFS8409-7TRL Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER