NXP Semiconductors BA277,135

Overview

BA277 from NXP Semiconductors is a planar high-performance band-switching diode in SOD523 (SC-79) package, designed for VHF television tuner RF signal path switching. It delivers max. 35 V reverse voltage, 100 mA forward current, 1.2 pF capacitance at 1 MHz/6 V, 0.7 Ω forward resistance at 100 MHz/2 mA, and operates across −65 °C to +150 °C junction temperature.

For engineers reviewing the BA277 datasheet, BA277 pinout, BA277 application, or BA277 equivalent, this page provides verified electrical specs, thermal resistance (85 K/W), cathode/anode terminal mapping, SOD523 mechanical dimensions, and direct alternatives for VHF band-switching circuits requiring low-loss RF switching performance.

Technical Context

The BA277 functions as a voltage-controlled RF switch in tuner front-ends, leveraging its low junction capacitance and minimal series resistance to minimize insertion loss and maintain signal integrity in VHF bands. Its planar construction and optimized doping profile enable stable capacitance-voltage response and low leakage (<50 nA at 25 V).

Designed for surface-mount band-switching circuits, the device operates with forward bias control (IF ≤ 100 mA) and reverse-biased blocking (VR ≤ 35 V), exhibiting predictable Cd vs. VR and rD vs. IF behavior per Figures 2 and 3 of the official datasheet.

Key Specifications

Pinout & Package

BA277 is housed in a plastic SOD523 (SC-79) surface-mount package: 1.25 mm × 0.85 mm × 0.58 mm body, 0.17 mm lead pitch, cathode marked by bar on top surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar band-switching diode applications.

Compared with BA277, BA279,135 offers enhanced voltage margin without layout change, while BAR63-02V,115 trades size and pin compatibility for ultra-low capacitance-making BA277 optimal for cost-sensitive, space-constrained VHF tuner production where 1.2 pF and 35 V meet spec.

Availability

BA277 is available at Aetrix Electronics and suitable for VHF television tuners, surface-mount RF switching modules, FM radio front-ends, and portable DVB-T antenna diversity circuits requiring stable component supply and long-lifecycle support.

Supply support for BA277 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer applications.

The BA277 belongs to NXP's legacy RF discrete diode product line, engineered specifically for low-loss, high-reliability band-switching in broadcast receiver front-ends where miniaturization and VHF performance are critical.

FAQ

What is the maximum reverse voltage rating for BA277?

The BA277 has a maximum continuous reverse voltage (VR) rating of 35 V, as specified in the Absolute Maximum Ratings table. This value defines the highest DC or peak RF voltage the diode can block in reverse-biased operation without risk of breakdown. Exceeding 35 V may cause permanent damage. The BA277 datasheet confirms this limit applies under all operating conditions and is validated per IEC 134 standards.

What package type does BA277 use and how is polarity marked?

The BA277 uses the SOD523 (SC-79) plastic surface-mount package, measuring 1.25 mm × 0.85 mm × 0.58 mm. Polarity is indicated by a marking bar on the top surface, which identifies Pin 1 as the cathode. This matches the pinning diagram in the official NXP datasheet Rev. 02, where Pin 1 = cathode and Pin 2 = anode. The SOD523 footprint is compatible with standard reflow profiles for fine-pitch SMT assembly.

What is the diode capacitance of BA277 and under what conditions is it measured?

The BA277 has a maximum diode capacitance (Cd) of 1.2 pF, measured at 1 MHz frequency, 6 V reverse bias, and 25 °C junction temperature, per the Electrical Characteristics table. Typical curves in Figure 2 show Cd decreases with increasing VR - e.g., ~0.8 pF at 12 V. This low capacitance is essential for minimizing detuning in VHF LC tank circuits used in television tuners where the BA277 is deployed.

How does BA277 perform in terms of forward resistance at RF frequencies?

The BA277 exhibits a maximum forward resistance (rD) of 0.7 Ω when measured at 100 MHz and 2 mA forward current, as stated in the Electrical Characteristics section. This low rD value ensures minimal RF conduction loss in active switching states. Figure 3 shows rD remains below 1.0 Ω up to 10 mA, confirming stable performance across typical tuner bias ranges. The BA277 achieves this via planar high-performance doping and optimized geometry.

Is BA277 suitable for use in portable DVB-T receivers?

Yes, the BA277 is suitable for portable DVB-T receivers, particularly in antenna diversity switching circuits operating in the 470–862 MHz band. Its 1.2 pF capacitance limits port-to-port coupling, 100 mA forward current rating supports robust GPIO-driven biasing, and SOD523 package enables compact layout. The BA277's −65 °C to +150 °C junction temperature range also accommodates battery-powered device thermal profiles, making it a proven choice in fielded DVB-T dongles.