NXP Semiconductors BA277,335

Overview

BA277,335 from NXP Semiconductors is a planar high-performance band-switching diode in SOD523 (SC-79) package, designed for VHF television tuner RF path switching. It delivers max. 35 V reverse voltage, 100 mA forward current, 1.2 pF capacitance at 1 MHz/6 V, 0.7 Ω forward resistance at 100 MHz/2 mA, and operates up to +150 °C junction temperature.

For engineers reviewing the BA277,335 datasheet, BA277,335 pinout, BA277,335 application, or BA277,335 equivalent, this page provides verified electrical specs, thermal resistance (85 K/W), cathode/anode pin mapping, and real-world VHF tuner use context - critical for RF front-end design and SMT layout validation.

Technical Context

The BA277,335 functions as a low-loss RF switch in VHF band-select circuits, leveraging its low junction capacitance and minimal series resistance to preserve signal integrity during antenna or IF path reconfiguration. Its planar construction and SOD523 packaging enable stable performance under RF bias conditions up to 100 MHz.

Designed for continuous DC forward conduction (≤100 mA) and reverse blocking (≤35 V), it maintains leakage <50 nA at 25 V and <1 µA at 20 V/75 °C - essential for low-power tuner standby operation and thermal reliability in compact TV modules.

Key Specifications

Pinout & Package

Package: SOD523 (SC-79), plastic surface-mounted, 2-lead, 1.25 × 0.85 mm body, 0.17 mm lead pitch; marking bar denotes cathode.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar band-switching diode applications.

Compared with BAV99,215 and MMBD7000LT1G, the BA277,335 offers the lowest combined capacitance-resistance product (0.84 pF·Ω) in SOD523, making it uniquely suited for high-fidelity VHF band switching where both RF loss and parasitic loading must be minimized.

Availability

BA277,335 is available at Aetrix Electronics and suitable for VHF television tuners, surface-mount RF filter selection circuits, and compact set-top box tuner modules requiring stable component supply and long-term lifecycle support.

Supply support for BA277,335 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer electronics.

The BA277,335 belongs to NXP's legacy RF discrete diode portfolio, engineered specifically for high-frequency band-switching in broadcast receiver front ends where low capacitance and stable RF resistance are critical.

FAQ

What is the maximum reverse voltage rating for the BA277,335?

The BA277,335 has a maximum continuous reverse voltage (VR) rating of 35 V, as specified in the Absolute Maximum Ratings table. This value defines the highest DC or peak RF reverse bias the diode can withstand without breakdown. Exceeding 35 V risks permanent junction damage. The BA277,335 is intended for VHF tuner applications where reverse bias remains well within this limit during normal band-switch operation.

How does the BA277,335 differ from standard switching diodes like the 1N4148?

The BA277,335 is optimized for RF band switching, not general-purpose logic or power switching. It features 1.2 pF capacitance and 0.7 Ω forward resistance at 100 MHz - significantly lower than the 1N4148's ~4 pF and ~10 Ω. Its SOD523 package and VHF-specific characterization make the BA277,335 unsuitable as a drop-in replacement for 1N4148 in digital circuits, but superior in tuner front ends where RF parasitics dominate performance.

Is the BA277,335 RoHS compliant and halogen-free?

Yes, the BA277,335 complies with EU RoHS Directive 2011/65/EU and is halogen-free per IEC 61249-2-21. NXP's product change notification PCN-2007-017 confirmed full RoHS compliance for all BA277 variants manufactured after January 2007, including BA277,335. Material declarations and test reports are available through NXP's official product portal using document ID BA277_N_2.

What is the thermal resistance from junction to soldering-point for the BA277,335?

The BA277,335 has a thermal resistance from junction to soldering-point (Rth j-s) of 85 K/W, measured under standard SMD mounting conditions. This parameter quantifies how effectively heat transfers from the silicon junction to the PCB pad during conduction. At 100 mA forward current and 0.7 Ω resistance, power dissipation is ~7 mW, resulting in a junction-to-pad temperature rise of <0.6 °C - confirming suitability for thermally unmanaged tuner modules.

Can the BA277,335 be used in 50 Ω RF systems?

Yes, the BA277,335 is routinely deployed in 50 Ω RF systems such as professional VHF receivers and test equipment interfaces. Its 1.2 pF capacitance and 0.7 Ω forward resistance yield an insertion loss <0.03 dB and return loss >25 dB across 30–200 MHz when properly impedance-matched. Layout best practices - including short traces, ground vias adjacent to pads, and consistent 50 Ω microstrip - are required to maintain these performance levels in actual BA277,335 implementations.