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NXP Semiconductors BAP1321-04,215
- Part No.:
- BAP1321-04,215
- Manufacturer:
- NXP Semiconductors
- Category:
- RF Diodes
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BAP1321-04,215.pdf
- Description:
- RF DIODE PIN 60V 250MW TO236AB
- Quantity:
- Payment:
- Shipping:
Inventory:3,112
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Product details
Overview
BAP1321-04,215 from NXP Semiconductors is a silicon PIN diode pair in series configuration housed in an SOT23 plastic package, designed for RF switching and attenuation up to 3 GHz. It delivers low diode capacitance (0.275–0.45 pF), low forward resistance (0.85–5.0 Ω depending on bias), and very low series inductance (1.4 nH), enabling high-isolation RF signal routing in compact wireless front-ends.
For engineers reviewing the BAP1321-04,215 datasheet, BAP1321-04,215 pinout, BAP1321-04,215 application, or BAP1321-04,215 equivalent, key selection criteria include reverse voltage rating (60 V), forward current capability (100 mA), thermal resistance (220 K/W), RF insertion loss (as low as 0.10 dB at 900 MHz/100 mA), and isolation performance (15.7 dB at 900 MHz).
Technical Context
The BAP1321-04,215 integrates two planar PIN diodes in series within a single SOT23 package, sharing a common terminal (Pin 3), with independent anode (Pin 1) and cathode (Pin 2) connections. This topology supports bidirectional RF signal control and enables symmetrical switching behavior in balanced RF paths.
Its operation relies on carrier lifetime (0.5 µs) and low-series-inductance packaging to maintain broadband RF performance from 900 MHz to 2.45 GHz. Electrical characteristics are specified at Tj = 25 °C, with thermal resistance from junction to soldering point fixed at 220 K/W - critical for power handling in continuous-wave RF applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Package | SOT23 (TO-236AB); 3-lead surface-mount package with 1.9 mm × 1.3 mm footprint and 1.1 mm height - enables high-density RF PCB layout. |
| Reverse Voltage (VR) | 60 V max - supports high-voltage RF switch biasing without breakdown in cellular and ISM band transceivers. |
| Forward Current (IF) | 100 mA max - allows sufficient DC control current to achieve sub-1 Ω forward resistance for minimal insertion loss. |
| Diode Capacitance (Cd) | 0.275–0.45 pF (VR = 1–20 V, f = 1 MHz) - ensures minimal RF shunting and high off-state impedance above 1 GHz. |
| Forward Resistance (rD) | 0.85–5.0 Ω (IF = 0.5–100 mA, f = 100 MHz) - directly determines RF insertion loss and power-handling linearity in attenuator designs. |
| Isolation (|s21|²) | 15.7 dB @ 900 MHz, 10.5 dB @ 1800 MHz, 7.9 dB @ 2450 MHz (VR = 0 V) - defines minimum signal leakage in switched-off state. |
| Insertion Loss (|s21|²) | 0.10–0.43 dB (IF = 0.5–100 mA, 900–2450 MHz) - quantifies RF path attenuation when diode is forward-biased and conducting. |
Pinout & Package
SOT23 plastic surface-mounted package (TO-236AB), 3-lead, marking code "6Fp". Dimensions: 2.9 mm × 1.3 mm × 1.1 mm (L × W × H), lead pitch 1.9 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode of Diode 1 | DC bias input for first PIN diode; connects to RF signal path when used in series-switch configuration. |
| 2 | Cathode of Diode 1 / Anode of Diode 2 | Common node between two diodes; forms mid-point connection for series diode pair topology. |
| 3 | Cathode of Diode 2 | DC return path for bias current; also serves as second RF port in series-connected RF switch implementation. |
Key Features
| Feature | Design Value |
|---|---|
| RF resistor behavior | Controllable forward resistance (0.85–5.0 Ω) enables precise analog RF attenuation without active circuitry. |
| Low series inductance | 1.4 nH at 100 MHz ensures minimal phase distortion and maintains broadband matching up to 3 GHz. |
| Low diode capacitance | 0.275 pF at VR = 20 V minimizes off-state coupling - critical for high-isolation SPDT switch designs. |
| High-voltage reverse blocking | 60 V continuous reverse voltage rating supports LTE/5G PA output stage switching and antenna tuning. |
| Fast carrier lifetime | 0.5 µs charge carrier lifetime enables microsecond-scale switching speed suitable for TDD-based systems. |
Applications
| Cellular Front-End Switches | ISM Band Attenuators |
|---|---|
|
Use Scenario: RF path selection between transmit and receive chains in 4G/5G handset power amplifiers and antenna tuners. IC Role / Device Role / Timing Role: Series-connected PIN diode pair acting as voltage-controlled RF switch with bidirectional conduction capability. Use Value: Achieves >15 dB isolation at 900 MHz while maintaining <0.15 dB insertion loss at 100 mA bias - enabling efficient TRX switching without external matching. |
Use Scenario: Programmable gain control in 2.4 GHz Wi-Fi and Bluetooth transceivers using variable DC bias. IC Role / Device Role / Timing Role: Analog RF resistor element whose forward resistance modulates signal amplitude in a 50 Ω stripline. Use Value: Delivers 0.10–0.43 dB insertion loss across 900–2450 MHz, supporting fine-grained attenuation steps without digital control overhead. |
| GPS L1 Band Filtering | UWB Pulse Shaping Networks |
|
Use Scenario: Low-loss bypass path activation during GPS signal acquisition to minimize noise figure degradation. IC Role / Device Role / Timing Role: Low-capacitance series switch inserted between LNA input and antenna feed. Use Value: 0.275 pF capacitance at 20 V reverse bias preserves GPS L1 (1575.42 MHz) signal integrity and maintains >12 dB isolation. |
Use Scenario: Pulse edge sharpening and amplitude trimming in 3.1–10.6 GHz ultra-wideband transmitter outputs. IC Role / Device Role / Timing Role: Fast-switching RF resistor used in time-domain pulse shaping networks with sub-microsecond response. Use Value: 0.5 µs carrier lifetime and 1.4 nH series inductance support clean pulse fidelity up to 5 GHz bandwidth. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF PIN diode switch and attenuator applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon BAR63-03W | Single PIN diode in SOT23; lower IF rating (50 mA), higher rD (1.5–6.5 Ω), Cd = 0.35 pF @ 20 V. | Limited to lower-power switches; lacks dual-diode series topology for balanced RF routing. | Select when single-diode simplicity suffices and 100 mA current handling is not required. |
| ON Semiconductor MMBD701LT1G | Single PIN diode in SOT23; VR = 50 V, IF = 100 mA, rD = 1.0–4.0 Ω, Cd = 0.38 pF @ 20 V. | No common-terminal series configuration; requires external series pairing for dual-diode function. | Choose only if board space allows discrete dual placement and thermal management permits separate die mounting. |
Compared with BAR63-03W and MMBD701LT1G, the BAP1321-04,215 uniquely integrates two matched PIN diodes in series with a shared terminal - reducing component count, improving tracking, and eliminating inter-diode parasitic mismatch in high-frequency RF switches.
Availability
BAP1321-04,215 is available at Aetrix Electronics and suitable for RF attenuators and switches, cellular front-end modules, and ISM-band transceiver designs requiring stable component supply, consistent RF performance, and long-term obsolescence mitigation.
Supply support for BAP1321-04,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in high-performance RF, analog, and mixed-signal solutions for wireless infrastructure, automotive radar, and consumer connectivity.
The BAP1321-04,215 belongs to NXP's legacy RF PIN diode portfolio, engineered specifically for broadband RF switching and analog attenuation in compact SMD form factors up to 3 GHz.
FAQ
What is the maximum operating frequency supported by the BAP1321-04,215?
The BAP1321-04,215 is characterized for operation up to 3 GHz, with measured isolation and insertion loss data provided at 900 MHz, 1800 MHz, and 2450 MHz. Its low series inductance (1.4 nH) and controlled capacitance enable usable RF performance through the upper edge of the UMTS and Wi-Fi bands, though full specification beyond 2.45 GHz is not published in the datasheet.
How is the common terminal (Pin 3) used in RF circuit design with the BAP1321-04,215?
In the BAP1321-04,215, Pin 3 serves as the shared cathode of Diode 1 and anode of Diode 2 in the internal series configuration. In RF switch layouts, it functions as the central RF node - allowing bidirectional signal flow between Pins 1 and 3 or Pins 2 and 3, depending on bias polarity and grounding strategy.
Does the BAP1321-04,215 require external DC blocking capacitors in RF signal paths?
Yes - because the BAP1321-04,215 conducts DC bias current through its RF path, external DC blocking capacitors (typically 100 pF NP0) are required at both RF ports to prevent bias voltage from interfering with adjacent circuitry. This is standard practice for series-connected PIN diodes used in RF switches.
What is the thermal resistance (Rth j-s) of the BAP1321-04,215 and how does it affect power handling?
The BAP1321-04,215 has a thermal resistance from junction to soldering point of 220 K/W. At 100 mA forward current and 0.95 V forward drop, power dissipation reaches ~95 mW - resulting in ~21 °C junction-to-solder rise. This limits continuous RF power handling unless PCB copper area and thermal vias are optimized per NXP's SOT23 layout guidelines.
Can the BAP1321-04,215 be used in automotive applications?
No - the BAP1321-04,215 is not automotive-qualified. Per NXP's datasheet disclaimers, it is explicitly designated as a non-automotive product,未经 AEC-Q200 stress testing or qualification. Its use in safety-critical or temperature-cycled automotive systems is unsupported and carries no warranty from NXP Semiconductors.
BAP1321-04,215 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Diode Type:
- PIN - 1 Pair Series Connection
- Voltage - Peak Reverse (Max):
- 60V
- Current - Max:
- 100 mA
- Capacitance @ Vr, F:
- 0.325pF @ 20V, 1MHz
- Resistance @ If, F:
- 1.3Ohm @ 100mA, 100MHz
- Power Dissipation (Max):
- 250 mW
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Supplier Device Package:
- SOT-23 (TO-236AB)
BAP1321-04,215 FAQ
1.How can I place an order for BAP1321-04,215 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAP1321-04,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAP1321-04,215 reliable?
The price and inventory of BAP1321-04,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAP1321-04,215 is usually 5 days.
3.What payment methods are accepted for BAP1321-04,215?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAP1321-04,215 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAP1321-04,215?
BAP1321-04,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAP1321-04,215 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAP1321-04,215?
For technical support, including BAP1321-04,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAP1321-04,215 requirements.
6.How does Aetrix verify that BAP1321-04,215 is sourced from the original manufacturer or authorized distributors?
All BAP1321-04,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAP1321-04,215 meets industry standards.
7.What is the process for return or replacement of BAP1321-04,215?
All BAP1321-04,215 units undergo pre-shipment inspection (PSI). If there is an issue with BAP1321-04,215, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAP1321-04,215 part is unused and in its original packaging.
Return procedure for BAP1321-04,215:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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