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NXP Semiconductors BAP1321LX,315
- Part No.:
- BAP1321LX,315
- Manufacturer:
- NXP Semiconductors
- Category:
- RF Diodes
- Package:
- 2-XDFN
- Datasheet:
-
BAP1321LX,315.pdf
- Description:
- RF DIODE PIN 60V 130MW 2DFN
- Quantity:
- Payment:
- Shipping:
Inventory:3,105
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Product details
Overview
BAP1321LX from NXP Semiconductors is a silicon PIN diode optimized for RF switching and attenuation up to 3 GHz, featuring low diode capacitance (0.21–0.32 pF), low forward resistance (0.9–5.0 Ω), and very low series inductance (0.4 nH). It operates as a voltage-controlled RF resistor in series or shunt configurations within 50 Ω stripline circuits.
For engineers reviewing the BAP1321LX datasheet, BAP1321LX pinout, BAP1321LX application, or BAP1321LX equivalent, key selection criteria include reverse voltage rating (60 V), forward current capability (100 mA), thermal resistance (74 K/W), and insertion loss performance (as low as 0.09 dB at 900 MHz with 100 mA bias).
Technical Context
The BAP1321LX employs a planar PIN structure with an intrinsic region enabling high-frequency resistive control under DC bias. Its charge carrier lifetime (0.48 μs) supports fast RF switching transitions between low-loss and high-isolation states.
Designed for integration into compact RF front-ends, it delivers isolation of 17 dB at 900 MHz and maintains sub-0.3 dB insertion loss across 900–2450 MHz when biased at ≥10 mA - critical for LTE, Wi-Fi, and Bluetooth antenna switching.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 60 V - supports biasing in high-voltage RF switch topologies without breakdown. |
| Forward Current (IF) | 100 mA - enables low rD operation (0.9 Ω typical) for minimal insertion loss in power-handling switches. |
| Diode Capacitance (Cd) | 0.21–0.32 pF at VR = 20–0 V - ensures minimal capacitive loading on 50 Ω RF paths up to 3 GHz. |
| Forward Resistance (rD) | 0.9–5.0 Ω across IF = 100–0.5 mA - provides tunable RF attenuation with predictable linear control. |
| Series Inductance (LS) | 0.4 nH - minimizes parasitic reactance, preserving broadband impedance match in SMD layouts. |
| Isolation (ISL) | 17 dB at 900 MHz (VR = 0 V) - enables effective signal blocking in transmit/receive T/R switching. |
| Insertion Loss (Lins) | 0.09 dB at 900 MHz (IF = 100 mA) - ensures negligible signal degradation in low-loss RF signal paths. |
Pinout & Package
Package: DFN1006D-2 (SOD882D), leadless ultra-small plastic SMD package; body dimensions 1.0 × 0.6 × 0.4 mm; cathode indicated by marking bar.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | cathode | DC bias return path and RF reference node; connects to ground or negative supply in shunt switch configurations. |
| 2 | anode | DC forward bias input and RF signal path terminal; placed in series with RF trace for attenuator/switch function. |
Key Features
| Feature | Design Value |
|---|---|
| Low diode capacitance | 0.21 pF at 20 V reverse bias - preserves RF bandwidth and matching in 50 Ω systems up to 3 GHz. |
| Low forward resistance | 0.9 Ω at 100 mA - reduces I²R heating and insertion loss in high-current RF switch legs. |
| Very low series inductance | 0.4 nH - avoids resonance and phase distortion in UHF/microwave signal routing. |
| High reverse voltage rating | 60 V - allows use in higher-power RF transceiver stages without clamping or protection circuitry. |
| Fast carrier lifetime | 0.48 μs - enables <1 μs switching transitions for time-division duplex (TDD) applications. |
Applications
| Cellular Front-End Switching | Wi-Fi 2.4 GHz Band Switching |
|---|---|
|
Use Scenario: Antenna switching between LTE transmit and receive paths in smartphone RF modules. IC Role / Device Role / Timing Role: Series-shunt PIN diode switch controlling RF signal routing with DC bias control. Use Value: Achieves 17 dB isolation at 900 MHz and 0.09 dB insertion loss at 100 mA bias, minimizing Tx leakage and Rx sensitivity loss. |
Use Scenario: Dynamic antenna selection between 2.4 GHz Wi-Fi and Bluetooth coexistence in IoT gateways. IC Role / Device Role / Timing Role: Low-inductance shunt switch isolating alternate antenna branches during band switching. Use Value: Sub-0.3 dB insertion loss and 0.4 nH LS ensure minimal group delay variation and stable impedance match across 2400–2500 MHz. |
| RF Attenuator Core | TDD Transceiver Protection |
|
Use Scenario: Digitally controlled step attenuator in test equipment signal conditioning paths. IC Role / Device Role / Timing Role: Voltage-biased RF resistor element where forward current sets attenuation level. Use Value: Linear rD vs. IF response (1.2–5.0 Ω over 10–0.5 mA) enables precise 1–10 dB attenuation steps with low distortion. |
Use Scenario: Transmit path protection during receive mode in FDD/TDD base station transceivers. IC Role / Device Role / Timing Role: Fast-switching series limiter activated during Rx burst windows to prevent PA damage. Use Value: 0.48 μs carrier lifetime and 60 V VR rating allow reliable transient suppression without latch-up or thermal runaway. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF PIN diode switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon BAR63-03W | Higher Cd (0.45 pF @ 0 V), lower VR (30 V), same DFN1006 package. | Limited to ≤1.5 GHz due to higher capacitance; unsuitable for 2.4 GHz Wi-Fi switching. | Select BAR63-03W only for cost-sensitive sub-1 GHz industrial remote controls. |
| ON Semiconductor MMBD701LT1G | Higher rD (≥8 Ω @ 10 mA), larger SOT-23-3 package, no specified LS or ISL data. | Not characterized for >1 GHz isolation or insertion loss; lacks RF optimization documentation. | Choose MMBD701LT1G only for general-purpose low-frequency bias control, not RF signal path use. |
Compared with BAR63-03W and MMBD701LT1G, the BAP1321LX delivers superior high-frequency performance (3 GHz operation), lower parasitics (0.4 nH LS, 0.21 pF Cd), and verified RF metrics (17 dB ISL, 0.09 dB Lins), making it the only option qualified for cellular and Wi-Fi front-end switching.
Availability
BAP1321LX is available at Aetrix Electronics and suitable for cellular front-end modules, Wi-Fi 2.4 GHz switching, and RF test equipment requiring stable component supply, consistent parametric performance, and long-term obsolescence management.
Supply support for BAP1321LX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer markets.
The BAP1321LX belongs to NXP's RF PIN diode product line, engineered specifically for high-linearity, low-parasitic RF switching and attenuation in compact wireless infrastructure and mobile device front-ends.
FAQ
What is the maximum operating frequency of the BAP1321LX?
The BAP1321LX is characterized for operation up to 3 GHz, with measured isolation and insertion loss data provided through 2450 MHz and confirmed functional performance at 3 GHz per NXP's RF characterization methodology. Its low capacitance (0.21 pF) and inductance (0.4 nH) enable stable S-parameter behavior in this range.
Does the BAP1321LX require external biasing circuitry?
Yes, the BAP1321LX requires DC forward bias (up to 100 mA) to achieve low forward resistance or reverse bias (up to 60 V) for high isolation. Bias is applied via series resistors or RF chokes; no integrated bias network is present. The BAP1321LX itself contains only the PIN junction and metallization.
What does the marking code "1001 0001" indicate on the BAP1321LX?
The binary marking code "1001 0001" identifies the BAP1321LX device per NXP's SOD882D marking standard. The cathode is denoted by a visible bar adjacent to pin 1. This code is not a date or lot code but a unique type identifier aligned with NXP's internal part numbering system for the BAP1321LX.
Can the BAP1321LX be used in automotive applications?
No - the BAP1321LX is not automotive-qualified. NXP explicitly states in its datasheet that unless otherwise specified, its products (including the BAP1321LX) are not tested or warranted for automotive use, safety-critical systems, or life-support applications.
How is thermal performance managed in the BAP1321LX?
The BAP1321LX has a thermal resistance from junction to solder point (Rth(j-sp)) of 74 K/W. Effective thermal management requires direct PCB copper pour connection to both terminals, especially the cathode pad, and adherence to NXP's recommended land pattern for the DFN1006D-2 package to maintain reliability at 130 mW total power dissipation.
BAP1321LX,315 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- 2-XDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Diode Type:
- PIN - Single
- Voltage - Peak Reverse (Max):
- 60V
- Current - Max:
- 100 mA
- Capacitance @ Vr, F:
- 0.28pF @ 20V, 1MHz
- Resistance @ If, F:
- 1.3Ohm @ 100mA, 100MHz
- Power Dissipation (Max):
- 130 mW
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Supplier Device Package:
- DFN1006D-2
BAP1321LX,315 FAQ
1.How can I place an order for BAP1321LX,315 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAP1321LX,315 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAP1321LX,315 reliable?
The price and inventory of BAP1321LX,315 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAP1321LX,315 is usually 5 days.
3.What payment methods are accepted for BAP1321LX,315?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAP1321LX,315 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAP1321LX,315?
BAP1321LX,315 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAP1321LX,315 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAP1321LX,315?
For technical support, including BAP1321LX,315 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAP1321LX,315 requirements.
6.How does Aetrix verify that BAP1321LX,315 is sourced from the original manufacturer or authorized distributors?
All BAP1321LX,315 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAP1321LX,315 meets industry standards.
7.What is the process for return or replacement of BAP1321LX,315?
All BAP1321LX,315 units undergo pre-shipment inspection (PSI). If there is an issue with BAP1321LX,315, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAP1321LX,315 part is unused and in its original packaging.
Return procedure for BAP1321LX,315:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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