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NXP Semiconductors BAP142LX,315
- Part No.:
- BAP142LX,315
- Manufacturer:
- NXP Semiconductors
- Category:
- RF Diodes
- Package:
- SOD-882
- Datasheet:
-
BAP142LX,315.pdf
- Description:
- RF DIODE PIN 50V 130MW SOD2
- Quantity:
- Payment:
- Shipping:
Inventory:6,418
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Product details
Overview
BAP142LX,315 from NXP Semiconductors is a silicon PIN diode optimized for RF switching and attenuation up to 3 GHz, featuring 0.25 pF typical capacitance at 0 V reverse bias, 0.7–1.3 Ω forward resistance at 100 mA, and 0.4 nH series inductance - deployed in ultra-compact DFN1006D-2 (SOD882D) package for high-density RF front-end modules.
For engineers reviewing the BAP142LX,315 datasheet, BAP142LX,315 pinout, BAP142LX,315 application, or BAP142LX,315 equivalent, key selection criteria include RF isolation at 900/1800/2450 MHz, low insertion loss under 0.1 dB at 100 mA bias, cathode-anode terminal polarity, and thermal resistance of 83 K/W to solder point.
Technical Context
The BAP142LX,315 operates as a current-controlled RF resistor: its intrinsic region enables voltage-independent resistance tuning via forward bias current (0.5–100 mA), delivering stable RF performance across 900 MHz to 2.45 GHz bands. Its planar structure and leadless SOD882D package minimize parasitic inductance and capacitance.
Reverse breakdown is rated at 50 V, with leakage limited to 100 nA at VR = 50 V; forward voltage is 0.95 V typical at IF = 50 mA. Charge carrier lifetime is 0.11 μs, enabling fast RF switching transitions in TDD systems and antenna tuning circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Capacitance (Cd) | 0.25 pF at VR = 0 V - enables minimal signal loading in 50 Ω RF paths up to 3 GHz |
| Forward Resistance (rD) | 0.7 Ω min at IF = 100 mA - ensures sub-0.1 dB insertion loss in series-switch configurations |
| Isolation (ISL) | 18 dB at 900 MHz, 11 dB at 2450 MHz - supports effective RF path blocking in LTE/Wi-Fi front-ends |
| Series Inductance (LS) | 0.4 nH - reduces self-resonance impact and maintains broadband impedance control |
| Thermal Resistance (Rth(j-sp)) | 83 K/W - allows reliable operation at 130 mW total dissipation with PCB copper thermal relief |
| Package Dimensions | 1.0 × 0.6 × 0.4 mm - fits within tight pitch layouts for multi-band antenna switch modules |
Pinout & Package
Package: DFN1006D-2 (SOD882D), leadless ultra-small plastic SMD package; 2-terminal surface-mount device with body size 1.0 × 0.6 × 0.4 mm; cathode identified by marking bar on top surface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | cathode | RF return path and DC bias sink; must connect to ground or negative rail in series-switch topology |
| 2 | anode | RF signal input/output node; forward current injection point for resistance control in attenuator cells |
Key Features
| Feature | Design Value |
|---|---|
| High-voltage RF resistor | Rated for 50 V reverse voltage - supports LTE band-edge filtering and PA output stage protection |
| Low-loss at low bias | 0.24 dB insertion loss at 900 MHz with only 0.5 mA forward current - enables ultra-low-power standby states |
| Sub-0.3 pF capacitance | 0.16–0.26 pF over 1–20 V reverse bias - preserves impedance match in wideband matching networks |
| Fast carrier lifetime | 0.11 μs - meets timing requirements for TDD-LTE and Wi-Fi 6/6E frame switching |
Applications
| Cellular Front-End Switching | Wi-Fi Antenna Tuning |
|---|---|
|
Use Scenario: LTE/5G sub-6 GHz TRX path switching between primary and diversity antennas. IC Role / Device Role / Timing Role: Series-connected RF switch controlling signal routing with <100 ns turn-on time. Use Value: 18 dB isolation at 900 MHz and 0.10 dB insertion loss at 10 mA bias enable seamless MIMO handover without desense. |
Use Scenario: Dynamic impedance matching for dual-band 2.4/5 GHz Wi-Fi antennas in smartphones. IC Role / Device Role / Timing Role: Voltage-tuned RF resistor adjusting matching network Q-factor in real time. Use Value: 0.22 pF capacitance at VR = 1 V and 0.4 nH inductance preserve Smith chart trajectory across 200 MHz bandwidth. |
| RF Attenuator Cell | ISM Band Transceiver Protection |
|
Use Scenario: Digitally controlled step attenuator in test equipment and base station calibration loops. IC Role / Device Role / Timing Role: Current-biased PIN diode acting as programmable resistive element in π- or T-networks. Use Value: Linear rD vs. IF response (1.0 Ω at 10 mA, 0.7 Ω at 100 mA) enables monotonic 10–20 dB attenuation range. |
Use Scenario: Transmit/receive path isolation in 2.45 GHz Bluetooth/Wi-Fi combo modules. IC Role / Device Role / Timing Role: Shunt-mode limiter protecting LNA input during PA transmit bursts. Use Value: 100 nA max reverse leakage at 50 V ensures no DC path degradation in receive sensitivity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF PIN diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon BAR63-03W | Higher Cd (0.35 pF @ 0 V), larger SOD-323 package (1.7 × 1.3 mm), 30 V VR rating | Less suitable for >2 GHz designs due to higher capacitance and package parasitics | Prefer BAP142LX,315 for 2.45 GHz Wi-Fi 6E antenna tuning where size and Cd are critical |
| ON Semiconductor MMBD701LT1G | Lower IF rating (50 mA), higher rD (1.5 Ω min), 35 V VR, SOT-23 package | Not recommended for high-isolation (>15 dB) switching above 1 GHz due to higher inductance | Choose BAP142LX,315 when sub-0.5 nH LS and 18 dB ISL at 900 MHz are required in space-constrained layouts |
Compared with BAR63-03W and MMBD701LT1G, the BAP142LX,315 delivers superior high-frequency isolation and lower package inductance in a 60% smaller footprint - making it the preferred choice for miniaturized 5G FR1 and Wi-Fi 6E front-end modules requiring consistent RF linearity below 3 GHz.
Availability
BAP142LX,315 is available at Aetrix Electronics and suitable for cellular front-end switching, Wi-Fi antenna tuning, and RF attenuator cell designs requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.
Supply support for BAP142LX,315 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and mobile applications.
The BAP142LX,315 belongs to NXP's high-frequency discrete portfolio, engineered specifically for compact, high-efficiency RF signal conditioning in consumer wireless infrastructure and portable devices.
FAQ
What is the maximum RF frequency supported by the BAP142LX,315?
The BAP142LX,315 is characterized and specified for operation up to 3 GHz, with measured isolation and insertion loss data provided at 900 MHz, 1800 MHz, and 2450 MHz. Its 0.4 nH series inductance and sub-0.3 pF capacitance maintain usable RF performance through the entire 2.4–2.5 GHz ISM band and into the lower 5 GHz UNII-1 band, confirming suitability for Wi-Fi 6/6E and Bluetooth LE applications.
How is the cathode identified on the BAP142LX,315 package?
The cathode of the BAP142LX,315 is marked by a visible bar on the top surface of the DFN1006D-2 (SOD882D) package. Per Table 1 and Figure 6 in the official NXP datasheet, Pin 1 is the cathode and aligns with this marking bar - critical for correct orientation during placement in series-switch or shunt-attenuator configurations.
What is the thermal resistance from junction to solder point for the BAP142LX,315?
The BAP142LX,315 has a thermal resistance Rth(j-sp) of 83 K/W, measured from junction to solder point under standard mounting conditions. This value enables reliable operation at its 130 mW total power dissipation limit when mounted on 1 oz copper with ≥2 mm² thermal pad area, supporting continuous RF switching in handheld and IoT transceivers.
Can the BAP142LX,315 be used in shunt configuration for RF limiting?
Yes, the BAP142LX,315 supports shunt-mode operation: its 100 nA max reverse leakage at 50 V ensures minimal receive-path degradation, while its low capacitance (0.16 pF at VR = 20 V) provides effective RF shorting above 1 GHz. Application note AN11282 confirms validated shunt limiter layouts using BAP142LX,315 with 50 Ω source/load terminations.
What is the forward voltage drop of the BAP142LX,315 at 50 mA?
The BAP142LX,315 exhibits a typical forward voltage (VF) of 0.95 V at IF = 50 mA and Tamb = 25 °C, with a maximum of 1.1 V. This low VF enables efficient biasing from 1.8 V or 3.3 V rails using simple current-source drivers, reducing power overhead in battery-powered RF switch controllers.
BAP142LX,315 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SOD-882
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Diode Type:
- PIN - Single
- Voltage - Peak Reverse (Max):
- 50V
- Current - Max:
- 100 mA
- Capacitance @ Vr, F:
- 0.26pF @ 20V, 1MHz
- Resistance @ If, F:
- 1.3Ohm @ 100mA, 100MHz
- Power Dissipation (Max):
- 130 mW
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Supplier Device Package:
- SOD2
BAP142LX,315 FAQ
1.How can I place an order for BAP142LX,315 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAP142LX,315 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAP142LX,315 reliable?
The price and inventory of BAP142LX,315 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAP142LX,315 is usually 5 days.
3.What payment methods are accepted for BAP142LX,315?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAP142LX,315 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAP142LX,315?
BAP142LX,315 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAP142LX,315 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAP142LX,315?
For technical support, including BAP142LX,315 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAP142LX,315 requirements.
6.How does Aetrix verify that BAP142LX,315 is sourced from the original manufacturer or authorized distributors?
All BAP142LX,315 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAP142LX,315 meets industry standards.
7.What is the process for return or replacement of BAP142LX,315?
All BAP142LX,315 units undergo pre-shipment inspection (PSI). If there is an issue with BAP142LX,315, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAP142LX,315 part is unused and in its original packaging.
Return procedure for BAP142LX,315:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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