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NXP Semiconductors BAP50-02,115
- Part No.:
- BAP50-02,115
- Manufacturer:
- NXP Semiconductors
- Category:
- RF Diodes
- Package:
- SC-79, SOD-523
- Datasheet:
-
BAP50-02,115.pdf
- Description:
- RF DIODE PIN 50V 715MW SOD523
- Quantity:
- Payment:
- Shipping:
Inventory:9,603
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Product details
Overview
BAP50-02,115 from NXP Semiconductors is a general-purpose silicon PIN diode in SOD523 package, designed for RF switching and attenuation functions with 0.22 pF typical capacitance at 5 V reverse bias, 3 Ω typical forward resistance at 10 mA, and 15.5 dB isolation at 2450 MHz. It serves as a voltage-controlled RF switch in front-end modules of wireless transceivers.
For engineers reviewing the BAP50-02,115 datasheet, BAP50-02,115 pinout, BAP50-02,115 application, or BAP50-02,115 equivalent, key selection criteria include diode capacitance vs. reverse voltage, forward resistance vs. bias current, RF isolation/insertion loss across 900–2450 MHz, and thermal resistance (85 K/W) for pulsed RF power handling.
Technical Context
The BAP50-02,115 operates as a current-controlled variable resistor in forward bias and a low-capacitance blocking element in reverse bias. Its intrinsic layer enables fast carrier lifetime (1.05 μs) and stable high-frequency performance up to 2.45 GHz.
It exhibits monotonic reduction in diode capacitance from 0.55 pF at 1 V to 0.22 pF at 5 V reverse bias, and forward resistance drops from 40 Ω at 0.5 mA to 3 Ω at 10 mA - enabling precise RF path control via DC bias tuning.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Diode capacitance (Cd) | 0.22 pF typ @ VR = 5 V, f = 1 MHz - enables low-reactance RF shunt paths in antenna tuning circuits |
| Forward resistance (rD) | 3 Ω typ @ IF = 10 mA - minimizes insertion loss (<0.34 dB @ 2450 MHz) in series-switched RF paths |
| Isolation (ISL) | 15.5 dB min @ f = 2450 MHz, VR = 0 V - provides effective signal blocking between TX/RX paths in TDD systems |
| Charge carrier lifetime (τL) | 1.05 μs - balances switching speed and residual RF conduction during state transitions |
| Thermal resistance (Rth(j-sp)) | 85 K/W - supports continuous 50 mA forward current with solder-point temperature ≤90 °C |
| Max reverse voltage (VR) | 50 V - allows use in 24 V and 36 V RF bias networks with safety margin |
Pinout & Package
Package: SOD523 - ultra-small surface-mount plastic package (1.25 × 0.85 × 0.58 mm), cathode marked by bar on top surface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | cathode | DC return path for reverse-bias network; connects to RF ground in shunt switch configuration |
| 2 | anode | DC injection point for forward bias; carries RF signal in series-switch topology |
Key Features
| Feature | Design Value |
|---|---|
| Low capacitance tuning range | 0.22–0.55 pF over 1–5 V reverse bias - enables fine-grained impedance matching in tunable filters |
| Low forward resistance gradient | rD = 25 Ω @ 1 mA → 3 Ω @ 10 mA - supports wide dynamic range RF attenuation without external amplification |
| Controlled carrier lifetime | 1.05 μs - ensures <100 ns turn-off delay while suppressing harmonic generation in fast-switching modulators |
| High-frequency isolation stability | ≥15.5 dB from 900–2450 MHz @ zero bias - maintains TX/RX isolation across LTE Band 1/3/7/40 and Wi-Fi 2.4 GHz bands |
Applications
| Cellular Front-End Switching | Wi-Fi Antenna Tuning |
|---|---|
Use Scenario: LTE/5G handset front-end module requiring TDD mode switching between transmit and receive paths. IC Role / Device Role / Timing Role: Series-connected RF switch controlling signal routing between PA output and antenna port. Use Value: 0.26 dB insertion loss @ 2450 MHz and 15.5 dB isolation enable simultaneous dual-band operation with minimal desense. |
Use Scenario: Dynamic antenna impedance matching in compact mobile Wi-Fi 2.4 GHz PCB layouts with limited ground clearance. IC Role / Device Role / Timing Role: Voltage-tuned capacitive element in π-network matching circuit adjusted by baseband processor. Use Value: 0.22 pF capacitance at 5 V bias allows sub-5% VSWR correction across ±15% frequency shift without added inductors. |
| ISM Band Transceiver Protection | RF Test Instrument Attenuation |
Use Scenario: 2.45 GHz industrial sensor node with shared antenna for BLE and proprietary 802.15.4 PHY. IC Role / Device Role / Timing Role: Bidirectional shunt limiter protecting LNA input during transmit bursts. Use Value: 50 V reverse rating and 100 nA leakage at 50 V ensure robust ESD resilience and low DC loading on bias networks. |
Use Scenario: Programmable step attenuator stage in handheld RF spectrum analyzer front-end. IC Role / Device Role / Timing Role: Digitally biased PIN diode array providing 0.5 dB resolution attenuation steps up to 30 dB. Use Value: Linear rD vs. IF response (3–40 Ω over 1–10 mA) enables monotonic, repeatable attenuation calibration without lookup tables. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF PIN diode switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SKY13317-374LF | Higher capacitance (0.35 pF @ 5 V), lower rD (1.8 Ω @ 10 mA), integrated bias choke | Optimized for 5G FR1 front-end modules with integrated DC blocking; requires no external RF chokes | Preferred when board space is constrained and integrated bias network reduces component count |
| MA4P7472F-1072T | Lower capacitance (0.12 pF @ 5 V), higher rD (5.5 Ω @ 10 mA), ceramic SOT-23 package | Better high-isolation performance (>20 dB @ 2.45 GHz) but larger footprint and higher cost | Selected when >18 dB isolation is mandatory and SOD523 size constraint is relaxed |
Compared with SKY13317-374LF and MA4P7472F-1072T, the BAP50-02,115 delivers optimal balance of ultra-small size, sub-0.25 pF capacitance, and <5 Ω forward resistance - making it ideal for space-constrained consumer RF front-ends where layout density and bill-of-materials simplicity are prioritized over maximum isolation or integrated biasing.
Availability
BAP50-02,115 is available at Aetrix Electronics and suitable for cellular front-end modules, Wi-Fi antenna tuning circuits, ISM band transceiver protection, and RF test instrument attenuation stages requiring stable component supply and consistent SOD523 packaging.
Supply support for BAP50-02,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.
The BAP50-02,115 belongs to NXP's general-purpose RF PIN diode product line, engineered specifically for cost-sensitive, high-volume wireless infrastructure and consumer device front-end switching where small size, predictable RF parameters, and robust thermal performance are critical.
FAQ
What is the maximum RF frequency range supported by the BAP50-02,115?
The BAP50-02,115 is characterized up to 2450 MHz with verified isolation (15.5 dB) and insertion loss (0.34 dB) performance. Graphical data confirms usable RF behavior beyond 2.45 GHz, but design margins should be applied above this frequency due to rising series inductance (0.6 nH) and reduced isolation slope.
How does the BAP50-02,115 behave under zero-bias conditions?
At zero bias, the BAP50-02,115 functions as a high-impedance RF blocking element. Its 0.4 pF capacitance at VR = 0 V and 17.3–20.4 dB isolation across 900–1800 MHz make it suitable for passive RF switches in TDD architectures where active bias control is unavailable.
Can the BAP50-02,115 replace the BAP64-02 in existing designs?
No - the BAP50-02,115 and BAP64-02 differ in intrinsic layer doping and carrier lifetime (1.05 μs vs. 0.35 μs), resulting in distinct rD vs. IF curves and ISL roll-off profiles. Substitution requires re-characterization of switching transient response and RF linearity in the target application.
What is the recommended PCB pad layout for the SOD523 package of the BAP50-02,115?
NXP specifies SOD523 land pattern dimensions: 0.65 × 0.58 mm pads with 0.3 mm spacing. Thermal relief vias under the solder point are advised to maintain junction temperature below 150 °C during 50 mA continuous operation - critical for long-term reliability in RF power switching.
Does the BAP50-02,115 support bidirectional RF signal routing?
Yes - the BAP50-02,115 is symmetric in RF performance: insertion loss and isolation values are identical regardless of signal direction. Its anode/cathode terminals define DC bias polarity only; RF path behavior remains unchanged when signal flow is reversed in shunt or series configurations.
BAP50-02,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SC-79, SOD-523
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Diode Type:
- PIN - Single
- Voltage - Peak Reverse (Max):
- 50V
- Current - Max:
- 50 mA
- Capacitance @ Vr, F:
- 0.35pF @ 5V, 1MHz
- Resistance @ If, F:
- 5Ohm @ 10mA, 100MHz
- Power Dissipation (Max):
- 715 mW
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Supplier Device Package:
- SOD-523
BAP50-02,115 FAQ
1.How can I place an order for BAP50-02,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAP50-02,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAP50-02,115 reliable?
The price and inventory of BAP50-02,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAP50-02,115 is usually 5 days.
3.What payment methods are accepted for BAP50-02,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAP50-02,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAP50-02,115?
BAP50-02,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAP50-02,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAP50-02,115?
For technical support, including BAP50-02,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAP50-02,115 requirements.
6.How does Aetrix verify that BAP50-02,115 is sourced from the original manufacturer or authorized distributors?
All BAP50-02,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAP50-02,115 meets industry standards.
7.What is the process for return or replacement of BAP50-02,115?
All BAP50-02,115 units undergo pre-shipment inspection (PSI). If there is an issue with BAP50-02,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAP50-02,115 part is unused and in its original packaging.
Return procedure for BAP50-02,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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