NXP Semiconductors BAP50-03,115

Overview

BAP50-03 from NXP Semiconductors is a silicon PIN diode in SOD323 (SC-76) surface-mount package, designed for RF switching and attenuation functions. It delivers 0.2–0.35 pF diode capacitance at 5 V reverse bias, 3–5 Ω forward resistance at 10 mA, and supports up to 50 V reverse voltage and 50 mA forward current - enabling use in 50 Ω RF front-end switch paths.

For engineers reviewing the BAP50-03 datasheet, BAP50-03 pinout, BAP50-03 application, or BAP50-03 equivalent, key selection criteria include RF insertion loss vs. frequency (e.g., −1.5 dB at 2 GHz with 10 mA bias), isolation performance (−20 dB at 2 GHz zero-bias), thermal resistance (85 K/W), and cathode-marked SOD323 footprint compatibility.

Technical Context

The BAP50-03 operates as a voltage-controlled RF resistor: its intrinsic region enables low capacitance and tunable forward resistance across 0.5–10 mA bias currents. At 100 MHz, r_D drops to 3–5 Ω under 10 mA drive, while C_d remains stable below 0.35 pF at VR ≥ 5 V - critical for broadband matching in 50 Ω systems.

Its two-terminal structure (anode/cathode) requires external DC biasing via RF chokes or T-networks, as shown in Figures 3 and 4. Thermal design must account for R_th(j-sp) = 85 K/W and P_tot = 500 mW at T_sp ≤ 90 °C to maintain junction temperature within −65 to +150 °C limits.

Key Specifications

Pinout & Package

SOD323 plastic surface-mounted package with 2 leads; cathode identified by marking bar on top surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF PIN diode applications.

Compared with BAR50-02VH6327XTSA1 and MMBAP50LT1G, the BAP50-03 offers optimal balance of low capacitance, moderate forward resistance, and proven 500 mW power handling in the industry-standard SOD323 footprint - making it preferred for mid-power RF switches where thermal and size constraints coexist.

Availability

BAP50-03 is available at Aetrix Electronics and suitable for RF front-end switching, antenna diversity systems, and T/R module designs requiring stable component supply, consistent SOD323 packaging, and verified 2 GHz insertion loss performance.

Supply support for BAP50-03 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and communication markets.

The BAP50-03 belongs to NXP's general-purpose RF PIN diode product line, engineered specifically for cost-sensitive, high-volume wireless infrastructure and consumer RF front-end applications demanding predictable C_d/r_D trade-offs.

FAQ

What is the maximum reverse voltage rating for the BAP50-03?

The BAP50-03 has an absolute maximum reverse voltage (V_R) rating of 50 V, as specified in Table 4 of the NXP datasheet. This rating applies under all operating conditions and must not be exceeded to prevent permanent device damage. The BAP50-03 is commonly used in RF switch applications where this voltage headroom accommodates transient spikes in cellular and Wi-Fi front-end circuits.

How does forward current affect the RF performance of the BAP50-03?

Increasing forward current lowers the BAP50-03's forward resistance (r_D): from ~40 Ω at 0.5 mA to ~3 Ω at 10 mA (Figure 2). This directly reduces insertion loss in series-switch configurations - e.g., BAP50-03 achieves −1.5 dB loss at 2 GHz with 10 mA bias. Exceeding 50 mA risks thermal overload due to its 500 mW power limit.

What is the diode capacitance of the BAP50-03 at 1 V reverse bias?

At 1 V reverse bias and 1 MHz, the BAP50-03 exhibits a typical diode capacitance (C_d) of 0.3–0.55 pF, as stated in Table 6. This value is critical for impedance matching in tunable RF filters; designers should reference Figure 1 for full C_d vs. V_R curves when optimizing BAP50-03-based matching networks.

Is the BAP50-03 suitable for automotive applications?

No - the BAP50-03 is not automotive-qualified. Per Section 12.4 of the NXP datasheet, unless explicitly stated, NXP products like the BAP50-03 are not tested or warranted for automotive use. For automotive-grade alternatives, consult NXP's AEC-Q200 qualified PIN diode portfolio; the BAP50-03 remains appropriate for industrial, consumer, and communications equipment.

What does the marking "A8" indicate on the BAP50-03 package?

The marking "A8" on the BAP50-03 corresponds to its type number per Table 3, and the bar adjacent to it identifies Pin 1 as the cathode. This marking scheme ensures unambiguous orientation during automated assembly and aligns with JEDEC SOD323 standards. The BAP50-03's cathode-first pinout (Pin 1 = cathode) must be observed in PCB layout to avoid functional failure in RF switch circuits.