My Inquiry
My Account
NXP Semiconductors BAP50-03,135
- Part No.:
- BAP50-03,135
- Manufacturer:
- NXP Semiconductors
- Category:
- RF Diodes
- Package:
- SC-76, SOD-323
- Datasheet:
-
BAP50-03,135.pdf
- Description:
- RF DIODE PIN 50V 500MW SOD323
- Quantity:
- Payment:
- Shipping:
Inventory:7,331
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
BAP50-03,135 from NXP Semiconductors is a silicon PIN diode in SOD323 (SC-76) surface-mount package, designed for RF switching and attenuation functions. It delivers 0.2–0.35 pF diode capacitance at 5 V reverse bias, 3–5 Ω forward resistance at 10 mA, and supports up to 50 V reverse voltage and 50 mA forward current - enabling use in 50 Ω RF front-end switch paths up to 3 GHz.
For engineers reviewing the BAP50-03,135 datasheet, BAP50-03,135 pinout, BAP50-03,135 application, or BAP50-03,135 equivalent, key selection criteria include RF insertion loss vs. frequency, zero-bias isolation performance, junction-to-solder-point thermal resistance (85 K/W), and cathode-marked SOD323 footprint compatibility with high-density PCB layouts.
Technical Context
The BAP50-03,135 operates as a voltage-controlled RF resistor: its intrinsic region enables low capacitance under reverse bias (0.2 pF typical at VR = 5 V) and low forward resistance under DC bias (3 Ω typical at IF = 10 mA). This dual-state behavior supports series-mode RF switching in 50 Ω transmission lines.
Its performance is characterized at 25 °C with defined test conditions: diode capacitance measured at 1 MHz, forward resistance at 100 MHz, and insertion loss/isolation curves provided up to 3 GHz - all validated per IEC 60134 absolute maximum ratings and AQL-based production testing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Diode capacitance (Cd) | 0.2–0.35 pF at VR = 5 V, 1 MHz - ensures minimal RF signal loading in receive-path switches |
| Forward resistance (rD) | 3–5 Ω at IF = 10 mA, 100 MHz - enables low-loss conduction in transmit-path series switches |
| Reverse voltage (VR) | 50 V max - supports operation in +28 V RF subsystems with margin |
| Forward current (IF) | 50 mA max - sufficient for biasing without external current limiting in most RF switch designs |
| Thermal resistance (Rth(j-sp)) | 85 K/W - allows direct thermal coupling to PCB copper for power dissipation up to 500 mW |
| Isolation @ 2.5 GHz | −20 dB typical at zero bias - provides effective signal blocking between antenna and LNA during RX mode |
| Insertion loss @ 2.5 GHz | −1.5 dB typical at IF = 10 mA - maintains signal integrity in active TX path routing |
Pinout & Package
SOD323 (SC-76) plastic surface-mounted package: 2-terminal, 1.35 mm × 0.85 mm body, 0.45 mm height, cathode marked by bar on top surface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | cathode | DC return path for bias network; connected to ground or negative supply in series-switch configuration |
| 2 | anode | RF signal input/output node; DC bias applied here to control conduction state in shunt or series topology |
Key Features
| Feature | Design Value |
|---|---|
| Low diode capacitance | 0.2 pF typical at 5 V reverse bias - minimizes capacitive feedthrough and preserves impedance match in broadband RF paths |
| Low forward resistance | 3 Ω typical at 10 mA - reduces insertion loss and power dissipation in high-current RF switch applications |
| Cathode-bar marking | Visible top-side polarity indicator aligned with JEDEC SC-76 standard - eliminates assembly orientation errors in automated placement |
| Thermal performance | 85 K/W junction-to-solder-point - enables reliable operation at full 500 mW power dissipation without heatsinking |
Applications
| Antenna Switching | RF Front-End Attenuator |
|---|---|
Use Scenario: Selecting between cellular LTE and Wi-Fi antennas in compact handheld devices using single-pole double-throw (SPDT) topology. IC Role / Device Role / Timing Role: Series-connected PIN diode acting as low-loss RF path selector controlled by DC bias voltage. Use Value: Achieves >20 dB isolation at 2.4 GHz with <1.5 dB insertion loss, enabling coexistence without cross-band interference. | Use Scenario: Programmable RF gain control in receiver AGC loops via variable-resistance shunt configuration. IC Role / Device Role / Timing Role: Voltage-variable RF resistor placed across 50 Ω signal path to attenuate input power before LNA. Use Value: Delivers 10–20 dB attenuation range with monotonic control using 0.5–10 mA bias current. |
| Transmit/Receive (T/R) Switch | RF Test Equipment Signal Routing |
Use Scenario: Isolating transmitter output from receiver input in half-duplex ISM-band modules (e.g., 868/915 MHz). IC Role / Device Role / Timing Role: Dual-diode series-shunt configuration forming bidirectional T/R switch with fast DC bias switching. Use Value: Provides >30 dB Tx-to-Rx isolation at 915 MHz while maintaining <1 dB path loss in active states. | Use Scenario: Reconfigurable signal path selection in benchtop RF analyzers and calibration fixtures. IC Role / Device Role / Timing Role: High-reliability RF switch element in automated test matrixes requiring repeatable 50 Ω impedance matching. Use Value: Maintains <0.05 dB repeatability over 10⁶ cycles and −25 dB isolation up to 3 GHz for precision measurement integrity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF PIN diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SKY13350-374LF | Higher IF rating (100 mA), lower Cd (0.15 pF typ), integrated bias choke; QFN-6 package | Requires external DC blocking and matching networks; suited for higher-power base station front ends | Select when >50 mA bias current or sub-1 pF capacitance is required; not drop-in due to 6-pin QFN footprint |
| MA4P7475F-1072T | Higher VR (100 V), higher rD (8 Ω typ at 10 mA), ceramic package with better thermal stability | Designed for military/aerospace environments; requires tighter layout control for parasitic inductance | Choose for extended temperature range (−55 to +125 °C) or higher reliability screening; SOD323 replacement requires validation of RF performance at target frequency |
Compared with SKY13350-374LF and MA4P7475F-1072T, the BAP50-03,135 offers optimal balance of low-cost SOD323 packaging, proven 3 GHz performance, and production-ready AQL testing - making it ideal for cost-sensitive consumer RF modules where 50 mA/50 V limits are sufficient.
Availability
BAP50-03,135 is available at Aetrix Electronics and suitable for RF front-end switching, antenna diversity systems, and programmable attenuator circuits requiring stable component supply across high-volume mobile and IoT device manufacturing.
Supply support for BAP50-03,135 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer applications.
The BAP50-03,135 belongs to NXP's general-purpose RF PIN diode product line, engineered specifically for high-frequency switching and attenuation in compact SMD form factors - targeting cost-effective integration into space-constrained wireless transceivers and front-end modules.
FAQ
What is the maximum RF frequency range supported by the BAP50-03,135?
The BAP50-03,135 is characterized up to 3 GHz in its official datasheet, with typical insertion loss of −1.5 dB and isolation of −20 dB at 2.5 GHz. Its performance remains usable beyond 3 GHz depending on PCB layout and bias conditions, but design validation above 3 GHz requires empirical measurement - the BAP50-03,135 datasheet does not guarantee specifications above this point.
How is the cathode identified on the BAP50-03,135 package?
The cathode of the BAP50-03,135 is marked by a visible bar on the top surface of the SOD323 package, aligned with Pin 1 per Table 1 in the NXP datasheet. This marking matches JEDEC SC-76 standard orientation and corresponds to the cathode terminal in the simplified outline diagram - confirming correct placement during automated assembly.
Can the BAP50-03,135 be used in series-shunt RF switch configurations?
Yes, the BAP50-03,135 is routinely deployed in series-shunt configurations for SPDT switching. Its low 0.2 pF capacitance at zero bias enables high isolation in shunt branches, while its 3 Ω forward resistance at 10 mA supports low-loss conduction in series arms - both verified in Figures 3 and 4 of the BAP50-03,135 datasheet.
What is the thermal resistance from junction to solder point for the BAP50-03,135?
The BAP50-03,135 has a specified thermal resistance of 85 K/W from junction to solder point (Rth(j-sp)), measured under standard SMD reflow conditions. This value enables direct thermal transfer to PCB copper pour, supporting continuous operation at its 500 mW total power dissipation limit without additional heatsinking.
Does the BAP50-03,135 require external DC blocking capacitors in RF signal paths?
Yes, the BAP50-03,135 requires external DC blocking capacitors when inserted directly into 50 Ω RF transmission lines - because its anode and cathode terminals carry both RF signal and DC bias simultaneously. The datasheet Figures 3 and 4 assume proper bias tee or capacitor-coupled injection, and omitting blocking capacitors risks DC shorting of RF sources or loads.
BAP50-03,135 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SC-76, SOD-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Diode Type:
- PIN - Single
- Voltage - Peak Reverse (Max):
- 50V
- Current - Max:
- 50 mA
- Capacitance @ Vr, F:
- 0.35pF @ 5V, 1MHz
- Resistance @ If, F:
- 5Ohm @ 10mA, 100MHz
- Power Dissipation (Max):
- 500 mW
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Supplier Device Package:
- SOD-323
BAP50-03,135 FAQ
1.How can I place an order for BAP50-03,135 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAP50-03,135 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAP50-03,135 reliable?
The price and inventory of BAP50-03,135 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAP50-03,135 is usually 5 days.
3.What payment methods are accepted for BAP50-03,135?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAP50-03,135 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAP50-03,135?
BAP50-03,135 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAP50-03,135 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAP50-03,135?
For technical support, including BAP50-03,135 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAP50-03,135 requirements.
6.How does Aetrix verify that BAP50-03,135 is sourced from the original manufacturer or authorized distributors?
All BAP50-03,135 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAP50-03,135 meets industry standards.
7.What is the process for return or replacement of BAP50-03,135?
All BAP50-03,135 units undergo pre-shipment inspection (PSI). If there is an issue with BAP50-03,135, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAP50-03,135 part is unused and in its original packaging.
Return procedure for BAP50-03,135:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAP50-03,135 Tags
.jpg)
-
BAP70-02,115
NXP USA Inc.
-
SMP1321-040LF
Skyworks Solutions Inc.
-
NSVR351SDSA3T1G
onsemi
-
BAT6302VH6327XTSA1
Infineon Technologies
-
SMP1307-011LF
Skyworks Solutions Inc.
-
SMP1345-040LF
Skyworks Solutions Inc.
-
BAT1503WE6327HTSA1
Infineon Technologies
-
SMS7630-005LF
Skyworks Solutions Inc.
-
SMP1322-040LF
Skyworks Solutions Inc.
-
SMS7621-040LF
Skyworks Solutions Inc.
-
SMS7621-079LF
Skyworks Solutions Inc.
-
SMS7630-040LF
Skyworks Solutions Inc.
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
