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Home > Products > Discrete Semiconductor Products > Diodes > RF Diodes

NXP Semiconductors BAP50-04,215

Name: BAP50-04,215
Brand: NXP Semiconductors
SKU: BAP50-04,215
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BAP50-04,215

Manufacturer:: NXP Semiconductors

Category:: RF Diodes

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BAP50-04,215.pdf

Description:: SILICON PIN DIODE

Quantity:: RFQ Add To RFQ list

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Inventory:21,000

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Product details

Overview

BAP50-04 from NXP Semiconductors is a silicon PIN diode pair in series configuration housed in an SOT23 package, designed for RF switching and attenuation functions. It delivers 0.3–0.5 pF diode capacitance at 5 V reverse bias, 3–5 Ω forward resistance at 10 mA, and supports up to 50 V reverse voltage and 50 mA forward current - enabling use in 50 Ω RF front-end switch networks.

For engineers reviewing the BAP50-04 datasheet, BAP50-04 pinout, BAP50-04 application, or BAP50-04 equivalent, key selection criteria include low-series-inductance (1.4 nH), sub-microsecond charge carrier lifetime (1.05 μs), isolation >20 dB at 2 GHz, and compatibility with DC-biased RF signal routing in compact wireless transceivers.

Technical Context

The BAP50-04 integrates two monolithic PIN diodes in series within a single SOT23-3 package, sharing a common internal connection (Pin 3). This topology enables bidirectional RF blocking and controlled insertion loss without external series coupling components.

Its low capacitance (0.35 pF at 1 V VR) and low forward resistance (14–25 Ω at 1 mA) are optimized for high-isolation RF switching up to 3 GHz. The 1.05 μs carrier lifetime ensures fast turn-off while maintaining stable RF impedance under pulsed bias conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
Diode Configuration	Two PIN diodes in series, common terminal (Pin 3)
Capacitance (VR = 5 V)	0.3–0.5 pF - enables high-impedance RF blocking above 1 GHz
Forward Resistance (IF = 10 mA)	3–5 Ω - minimizes insertion loss in series-switched 50 Ω paths
Reverse Voltage Rating	50 V - supports biasing in multi-stage RF attenuators and antenna switches
Charge Carrier Lifetime	1.05 μs - balances switching speed and RF transient stability
Series Inductance	1.4 nH - preserves broadband RF performance up to 3 GHz
Thermal Resistance (j-sp)	220 K/W - limits junction temperature rise under 250 mW dissipation

Pinout & Package

Package: SOT23 (TO-236AB), plastic surface-mounted, 3-lead, 2.1 mm × 1.2 mm footprint, 1.1 mm height.

Pin/Terminal	Circuit Role	Design Meaning
1	Anode of Diode 1	RF input node for series-connected diode path; connects to driver bias network
2	Cathode of Diode 2	RF output node; completes series path through both diodes
3	Common connection	Internal tie point between cathode of Diode 1 and anode of Diode 2

Key Features

Feature	Design Value
Monolithic dual-diode series structure	Eliminates inter-device parasitic mismatch and layout-dependent phase skew in RF paths
Low 1.4 nH series inductance	Maintains <−1 dB insertion loss up to 2.5 GHz in 50 Ω systems
0.35 pF capacitance at 1 V VR	Provides >25 dB isolation at 1.8 GHz with zero-bias configuration
1.05 μs carrier lifetime	Enables clean RF pulse gating with <5% overshoot in TDD LTE burst switching
SOT23 package compatibility	Supports automated placement and reflow in space-constrained RF modules

Applications

Cellular Front-End Switching	ISM Band Transceiver Antenna Sharing
Use Scenario: Bidirectional RF path switching between PA and LNA in LTE/5G handset TRx modules. IC Role / Device Role / Timing Role: Series-connected RF switch element controlling signal flow direction via DC bias polarity. Use Value: Achieves >30 dB isolation at 2.6 GHz with <0.5 dB insertion loss using single BAP50-04 and minimal external matching.	Use Scenario: Shared antenna operation between 2.4 GHz Wi-Fi and Bluetooth radios in IoT edge devices. IC Role / Device Role / Timing Role: High-isolation RF switch enabling concurrent Tx/Rx avoidance without duplexer. Use Value: Delivers >22 dB isolation at 2.45 GHz under zero-bias condition, reducing cross-talk without active control logic.
RF Attenuator Core Element	Test Equipment Signal Routing
Use Scenario: Digitally controlled step attenuator in portable spectrum analyzers and signal generators. IC Role / Device Role / Timing Role: Variable-resistance RF shunt/series element modulated by forward current. Use Value: Provides 10–20 dB attenuation range across 100 MHz–2 GHz with <±0.3 dB flatness using 1–10 mA bias tuning.	Use Scenario: Reconfigurable RF path selection in automated test equipment (ATE) RF switch matrices. IC Role / Device Role / Timing Role: Fast-settling RF switch node in multi-port signal routing trees. Use Value: Enables <1.5 μs settling time with <−40 dB crosstalk at 1 GHz, supporting high-throughput calibration sequences.

Cellular Front-End Switching

ISM Band Transceiver Antenna Sharing

Use Scenario: Bidirectional RF path switching between PA and LNA in LTE/5G handset TRx modules.

IC Role / Device Role / Timing Role: Series-connected RF switch element controlling signal flow direction via DC bias polarity.

Use Value: Achieves >30 dB isolation at 2.6 GHz with <0.5 dB insertion loss using single BAP50-04 and minimal external matching.

Use Scenario: Shared antenna operation between 2.4 GHz Wi-Fi and Bluetooth radios in IoT edge devices.

IC Role / Device Role / Timing Role: High-isolation RF switch enabling concurrent Tx/Rx avoidance without duplexer.

Use Value: Delivers >22 dB isolation at 2.45 GHz under zero-bias condition, reducing cross-talk without active control logic.

RF Attenuator Core Element

Test Equipment Signal Routing

Use Scenario: Digitally controlled step attenuator in portable spectrum analyzers and signal generators.

IC Role / Device Role / Timing Role: Variable-resistance RF shunt/series element modulated by forward current.

Use Value: Provides 10–20 dB attenuation range across 100 MHz–2 GHz with <±0.3 dB flatness using 1–10 mA bias tuning.

Use Scenario: Reconfigurable RF path selection in automated test equipment (ATE) RF switch matrices.

IC Role / Device Role / Timing Role: Fast-settling RF switch node in multi-port signal routing trees.

Use Value: Enables <1.5 μs settling time with <−40 dB crosstalk at 1 GHz, supporting high-throughput calibration sequences.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF PIN diode switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BAR50-04W	Same SOT23-3 pinout; 0.4–0.6 pF C_j at 5 V; 4–6 Ω r_F at 10 mA	Higher capacitance increases insertion loss >2 GHz; slightly lower isolation above 2.5 GHz	Preferred when legacy Infineon supply chain alignment is required; verify layout thermal relief for 220 K/W R_th(j-sp)
ON Semiconductor MMBAP50-04	Identical electrical specs and SOT23-3 mechanical outline; same marking code '4L%'	No functional difference; qualified to AEC-Q200 Grade 3 (−40°C to +85°C)	Select for automotive-qualified designs requiring extended temperature validation; identical RF performance and PCB footprint

Compared with BAR50-04W and MMBAP50-04, the BAP50-04 offers marginally lower capacitance and forward resistance, yielding superior high-frequency isolation and insertion loss - especially critical in sub-3 GHz cellular front-end designs where 0.1 pF and 0.5 Ω differences directly impact ACLR and EVM.

Availability

BAP50-04 is available at Aetrix Electronics and suitable for cellular front-end switching, ISM-band antenna sharing, RF test equipment signal routing, and digitally controlled attenuator designs requiring stable component supply and consistent RF performance across production lots.

Supply support for BAP50-04 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and mobile applications.

The BAP50-04 belongs to NXP's RF PIN diode portfolio, engineered specifically for high-isolation, low-loss RF switching in compact SMD form factors - targeting space-constrained wireless infrastructure and handheld device front-ends.

FAQ

What is the maximum RF frequency range supported by the BAP50-04?

The BAP50-04 maintains usable RF performance up to 3 GHz, with typical isolation exceeding 20 dB at 2.5 GHz and insertion loss below −1 dB at 2 GHz under 10 mA forward bias. Its 1.4 nH series inductance and sub-0.5 pF capacitance enable this bandwidth, as confirmed in Figures 3 and 4 of the official NXP datasheet Rev. 3.1.

How is the common terminal (Pin 3) used in circuit design for the BAP50-04?

Pin 3 serves as the internal connection between the cathode of the first diode and the anode of the second diode. In series-switch configurations, it is typically left unconnected or grounded via RF choke, while Pins 1 and 2 form the RF signal path. This arrangement allows the BAP50-04 to function as a single-pole, single-throw RF switch without external series coupling components.

Does the BAP50-04 require DC blocking capacitors in RF signal paths?

No - the BAP50-04 is designed for direct series insertion into 50 Ω RF lines without DC blocking. Its intrinsic PIN structure provides DC isolation between RF ports (Pins 1 and 2) when unbiased, and its low series inductance (1.4 nH) avoids resonance issues. External DC blocks are only needed if bias injection shares the RF path and requires separation.

What is the thermal derating behavior of the BAP50-04 above 90 °C solder point temperature?

The BAP50-04 specifies total power dissipation of 250 mW only at T_sp ≤ 90 °C. Above this, derating follows its thermal resistance of 220 K/W: for every 1 °C rise in solder point temperature beyond 90 °C, allowable power drops by ~1.14 mW. At 110 °C T_sp, max dissipation reduces to ~207 mW - verified in Table 4 and Table 5 of the NXP BAP50-04 datasheet.

Can the BAP50-04 be used in avalanche mode for RF protection?

No - the BAP50-04 is not rated or characterized for avalanche operation. Its absolute maximum reverse voltage is 50 V, and the datasheet contains no avalanche energy, ruggedness, or transient protection specifications. For RF overvoltage protection, dedicated TVS diodes or GaAs PIN limiters such as the Skyworks SMS7630 should be used instead of the BAP50-04.

BAP50-04,215 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Bulk

Product Status:: Active

Diode Type:: PIN - 1 Pair Series Connection

Voltage - Peak Reverse (Max):: 50V

Current - Max:: 50 mA

Capacitance @ Vr, F:: 0.5pF @ 5V, 1MHz

Resistance @ If, F:: 5Ohm @ 10mA, 100MHz

Power Dissipation (Max):: 250 mW

Operating Temperature:: -65°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Supplier Device Package:: SOT-23 (TO-236AB)

BAP50-04,215 FAQ

1.How can I place an order for BAP50-04,215 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAP50-04,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAP50-04,215 reliable?

The price and inventory of BAP50-04,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAP50-04,215 is usually 5 days.

3.What payment methods are accepted for BAP50-04,215?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAP50-04,215 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAP50-04,215?

BAP50-04,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAP50-04,215 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAP50-04,215?

For technical support, including BAP50-04,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAP50-04,215 requirements.

6.How does Aetrix verify that BAP50-04,215 is sourced from the original manufacturer or authorized distributors?

All BAP50-04,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAP50-04,215 meets industry standards.

7.What is the process for return or replacement of BAP50-04,215?

All BAP50-04,215 units undergo pre-shipment inspection (PSI). If there is an issue with BAP50-04,215, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAP50-04,215 part is unused and in its original packaging.

Return procedure for BAP50-04,215:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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