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Home > Products > Discrete Semiconductor Products > Diodes > RF Diodes

NXP Semiconductors BAP50-04W,115

Name: BAP50-04W,115
Brand: NXP Semiconductors
SKU: BAP50-04W,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BAP50-04W,115

Manufacturer:: NXP Semiconductors

Category:: RF Diodes

Package:: SC-70, SOT-323

Datasheet:: BAP50-04W,115.pdf

Description:: RF DIODE PIN 50V 240MW SOT323-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BAP50-04W from NXP Semiconductors is a dual-element silicon PIN diode in series configuration housed in a SOT323 plastic surface-mount package. It delivers low diode capacitance (0.30 pF typ at 5 V reverse bias), low forward resistance (3 Ω typ at 10 mA), and fast charge carrier lifetime (1.05 μs), enabling high-frequency RF switching and attenuation in compact wireless front-ends.

For engineers reviewing the BAP50-04W datasheet, BAP50-04W pinout, BAP50-04W application, or BAP50-04W equivalent, key selection criteria include its series-connected dual-diode topology, 50 V reverse voltage rating, 50 mA continuous forward current capability, and SOT323 thermal resistance of 250 K/W - all critical for RF switch design and impedance matching networks.

Technical Context

The BAP50-04W integrates two identical planar PIN diodes in series within a single SOT323 package, sharing a common internal connection (Pin 3). This topology increases effective reverse breakdown voltage and improves isolation in RF series-switch configurations without requiring external interconnects.

Its intrinsic region enables predictable, linear capacitance-voltage behavior (0.30–0.60 pF over 1–5 V reverse bias) and low-loss conduction (r_D = 3–40 Ω across 0.5–10 mA), supporting stable RF signal routing up to 2.5 GHz with insertion loss < –1 dB and off-state isolation > –20 dB.

Key Specifications

Parameter	Value and Actual Design Meaning
Diode Configuration	Two PIN diodes in series, sharing Pin 3 as common node - enables higher blocking voltage and simplified series-switch layout
Capacitance (C_d)	0.30 pF typical at VR = 5 V - ensures minimal RF loading in 50 Ω systems above 1 GHz
Forward Resistance (r_D)	3 Ω typical at IF = 10 mA - reduces insertion loss and power dissipation in on-state RF paths
Reverse Voltage (V_R)	50 V maximum - supports operation in +28 V RF bias rails with safety margin
Charge Carrier Lifetime (τ_L)	1.05 μs - balances switching speed and distortion for sub-GHz to 2.5 GHz applications
Thermal Resistance (R_th(j-sp))	250 K/W - defines junction-to-solder-point temperature rise under 240 mW total dissipation

Pinout & Package

Package: SOT323 - 3-lead plastic surface-mounted package (JEDEC TO-236AB / SC-70), 1.35 mm × 1.75 mm footprint, 0.95 mm height, optimized for high-frequency RF layout with low parasitic inductance (L_S = 1.60 nH).

Pin/Terminal	Circuit Role	Design Meaning
1	Anode of Diode 1	RF input node when used in series-switch configuration; connects to driver bias network
2	Cathode of Diode 2	RF output node; referenced to ground via external DC blocking capacitor
3	Common connection (cathode of D1 / anode of D2)	Internal series junction - eliminates need for external trace between diodes, reducing parasitic inductance

Key Features

Feature	Design Value
Dual-series PIN topology	Enables single-package 50 V blocking capability with matched characteristics - avoids tolerance stacking in discrete dual-diode layouts
Low C_d at 5 V bias	0.30 pF typical - maintains > 20 dB isolation up to 2.5 GHz without tuning capacitors
Controlled r_D vs. I_F	14–25 Ω at 1 mA; 3–5 Ω at 10 mA - allows precise RF attenuation control via bias current adjustment
Fast τ_L	1.05 μs - supports > 1 MHz switching rates while limiting harmonic generation in pulsed RF systems

Applications

RF Front-End Switch	Antenna Tuning Network
Use Scenario: Bidirectional T/R switching in 802.11n/ac Wi-Fi transceivers operating at 2.4 GHz and 5 GHz bands. IC Role / Device Role / Timing Role: Series-connected RF switch element controlling signal path between PA/LNA and antenna port. Use Value: Achieves < –1 dB insertion loss and > –20 dB isolation at 2.4 GHz using only 10 mA forward bias - minimizes DC overhead and board space.	Use Scenario: Dynamic impedance matching for multi-band LTE/5G handset antennas with variable frequency coverage. IC Role / Device Role / Timing Role: Tunable shunt/series reactance element adjusted via analog bias voltage to shift resonant frequency. Use Value: Capacitance tunability (0.30–0.60 pF) and low r_D enable fine-grained SWR correction across 700 MHz–3.8 GHz without added inductors.
RF Attenuator Cell	High-Speed Modulator
Use Scenario: Digitally controlled step attenuator in test equipment signal chains requiring 0.5–30 dB range with flat frequency response. IC Role / Device Role / Timing Role: Current-biased PIN diode acting as voltage-variable resistor in π- or T-network topologies. Use Value: r_D variation from 40 Ω (0.5 mA) to 3 Ω (10 mA) provides > 20 dB attenuation range with < ±0.3 dB flatness from 10 MHz to 1 GHz.	Use Scenario: Pulse-width modulated RF envelope generator in radar pulse compression or IoT wake-up receivers. IC Role / Device Role / Timing Role: Fast-switching RF gate modulating carrier amplitude with sub-microsecond edge fidelity. Use Value: 1.05 μs τ_L and low L_S (1.60 nH) preserve 10%–90% rise times < 2.5 ns - supports > 100 kbps modulation bandwidth.

RF Front-End Switch

Antenna Tuning Network

Use Scenario: Bidirectional T/R switching in 802.11n/ac Wi-Fi transceivers operating at 2.4 GHz and 5 GHz bands.

IC Role / Device Role / Timing Role: Series-connected RF switch element controlling signal path between PA/LNA and antenna port.

Use Value: Achieves < –1 dB insertion loss and > –20 dB isolation at 2.4 GHz using only 10 mA forward bias - minimizes DC overhead and board space.

Use Scenario: Dynamic impedance matching for multi-band LTE/5G handset antennas with variable frequency coverage.

IC Role / Device Role / Timing Role: Tunable shunt/series reactance element adjusted via analog bias voltage to shift resonant frequency.

Use Value: Capacitance tunability (0.30–0.60 pF) and low r_D enable fine-grained SWR correction across 700 MHz–3.8 GHz without added inductors.

RF Attenuator Cell

High-Speed Modulator

Use Scenario: Digitally controlled step attenuator in test equipment signal chains requiring 0.5–30 dB range with flat frequency response.

IC Role / Device Role / Timing Role: Current-biased PIN diode acting as voltage-variable resistor in π- or T-network topologies.

Use Value: r_D variation from 40 Ω (0.5 mA) to 3 Ω (10 mA) provides > 20 dB attenuation range with < ±0.3 dB flatness from 10 MHz to 1 GHz.

Use Scenario: Pulse-width modulated RF envelope generator in radar pulse compression or IoT wake-up receivers.

IC Role / Device Role / Timing Role: Fast-switching RF gate modulating carrier amplitude with sub-microsecond edge fidelity.

Use Value: 1.05 μs τ_L and low L_S (1.60 nH) preserve 10%–90% rise times < 2.5 ns - supports > 100 kbps modulation bandwidth.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PIN diode switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BAP64-04W	Higher C_d (0.45 pF typ at 5 V), lower r_D (2.5 Ω typ), same SOT323 package and pinout	Better suited for ultra-low-loss paths below 1 GHz; less ideal for wideband isolation-critical designs	Select BAP64-04W when minimizing insertion loss at sub-1 GHz dominates over broadband isolation
MA4P7475F-1072T	Single-element GaAs PIN diode, 0.25 pF C_d, 0.8 Ω r_D, SOD-323 package, different pin assignment (anode/cathode only)	Requires external series connection for dual-diode functionality; superior high-frequency performance but higher cost and layout complexity	Choose MA4P7475F-1072T only when > 3 GHz operation or < 0.3 pF C_d is mandatory and dual-diode integration is not required

Compared with BAP50-04W, BAP64-04W offers lower on-resistance but reduced off-capacitance control, while MA4P7475F-1072T delivers better RF metrics at the cost of added layout effort and no integrated series topology - making BAP50-04W optimal for cost-sensitive, space-constrained dual-diode switching up to 2.5 GHz.

Availability

BAP50-04W is available at Aetrix Electronics and suitable for RF front-end switches, antenna tuning networks, and programmable attenuators requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support for wireless infrastructure and consumer connectivity modules.

Supply support for BAP50-04W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and communication markets.

The BAP50-04W belongs to NXP's RF PIN diode product line, engineered specifically for high-isolation, low-distortion RF switching and attenuation in compact SMD form factors for wireless infrastructure, Wi-Fi, and cellular front-ends.

FAQ

What is the maximum reverse voltage rating for the BAP50-04W?

The BAP50-04W has a maximum continuous reverse voltage (V_R) rating of 50 V per diode, as specified in the Absolute Maximum Ratings table. This applies to each individual PIN element in the series pair. Operation beyond this voltage risks permanent junction damage and is not supported under any conditions.

How does the common terminal (Pin 3) function in the BAP50-04W dual-diode structure?

Pin 3 serves as the internal common connection between the cathode of the first diode and the anode of the second diode. This creates a true series configuration within one package, eliminating external trace inductance and ensuring matched electrical characteristics between elements - a key advantage over discrete dual-diode implementations.

Can the BAP50-04W be used in 5 GHz Wi-Fi applications?

Yes, the BAP50-04W supports 5 GHz operation: Figure 3 shows insertion loss < –1 dB and Figure 4 shows isolation > –15 dB at 5 GHz in typical on/off states. Its 1.60 nH series inductance and sub-0.5 pF capacitance enable usable RF performance through 5 GHz, though optimal results require careful PCB layout and bias network design.

What is the thermal resistance from junction to soldering point for the BAP50-04W?

The BAP50-04W has a typical thermal resistance from junction to soldering point (R_th(j-sp)) of 250 K/W, measured under standard SMT reflow conditions. This value determines the temperature rise above ambient at the die when dissipating power - for example, 100 mW dissipation yields ~25 °C junction-to-solder-point rise.

Is the BAP50-04W suitable for automotive applications?

No, the BAP50-04W is not automotive-qualified. The NXP datasheet explicitly states that unless otherwise indicated, non-automotive qualified products like the BAP50-04W are not tested or warranted for use in safety-critical, life-support, or automotive environments - including ADAS, infotainment, or powertrain systems.

BAP50-04W,115 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: SC-70, SOT-323

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Diode Type:: PIN - 1 Pair Series Connection

Voltage - Peak Reverse (Max):: 50V

Current - Max:: 50 mA

Capacitance @ Vr, F:: 0.5pF @ 5V, 1MHz

Resistance @ If, F:: 5Ohm @ 10mA, 100MHz

Power Dissipation (Max):: 240 mW

Operating Temperature:: -65°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Supplier Device Package:: SC-70

BAP50-04W,115 FAQ

1.How can I place an order for BAP50-04W,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAP50-04W,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAP50-04W,115 reliable?

The price and inventory of BAP50-04W,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAP50-04W,115 is usually 5 days.

3.What payment methods are accepted for BAP50-04W,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAP50-04W,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAP50-04W,115?

BAP50-04W,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAP50-04W,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAP50-04W,115?

For technical support, including BAP50-04W,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAP50-04W,115 requirements.

6.How does Aetrix verify that BAP50-04W,115 is sourced from the original manufacturer or authorized distributors?

All BAP50-04W,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAP50-04W,115 meets industry standards.

7.What is the process for return or replacement of BAP50-04W,115?

All BAP50-04W,115 units undergo pre-shipment inspection (PSI). If there is an issue with BAP50-04W,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAP50-04W,115 part is unused and in its original packaging.

Return procedure for BAP50-04W,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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