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NXP Semiconductors BAP50-05,215
- Part No.:
- BAP50-05,215
- Manufacturer:
- NXP Semiconductors
- Category:
- RF Diodes
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BAP50-05,215.pdf
- Description:
- RF DIODE PIN 50V 250MW TO236AB
- Quantity:
- Payment:
- Shipping:
Inventory:2,235
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Product details
Overview
BAP50-05,215 from NXP Semiconductors is a dual-element silicon PIN diode in common cathode configuration housed in an SOT23 surface-mount package, rated for 50 V reverse voltage and 50 mA forward current, with typical diode capacitance of 0.35 pF at 1 V reverse bias and forward resistance of 3 Ω at 10 mA - used for RF switching and attenuation in 50 Ω signal paths up to 3 GHz.
For engineers reviewing the BAP50-05,215 datasheet, BAP50-05,215 pinout, BAP50-05,215 application, or BAP50-05,215 equivalent, key selection criteria include low capacitance under zero/low bias, low forward resistance at control currents ≥1 mA, common-cathode dual-diode topology for series-shunt switch configurations, and SOT23 thermal resistance of 220 K/W for RF power handling.
Technical Context
The BAP50-05,215 integrates two identical PIN diodes sharing a single cathode terminal (Pin 3), enabling compact series–shunt RF switch topologies without external interconnects. Its intrinsic layer delivers low capacitance and controlled carrier lifetime for predictable RF insertion loss and isolation.
At 100 MHz, forward resistance drops from 40 Ω at 0.5 mA to 3 Ω at 10 mA, while diode capacitance remains ≤0.5 pF from 0 to 5 V reverse bias - supporting stable impedance matching and minimal signal distortion in broadband RF front-ends.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Configuration | Dual PIN diode, common cathode - enables compact series–shunt RF switch designs with single bias network |
| Reverse Voltage (VR) | 50 V max - supports operation in 24–48 V RF bias rails with margin |
| Diode Capacitance (Cd) | 0.35 pF typ at VR = 1 V, f = 1 MHz - ensures minimal loading on 50 Ω RF traces up to 3 GHz |
| Forward Resistance (rD) | 3 Ω typ at IF = 10 mA, f = 100 MHz - yields <0.3 dB insertion loss in series-switch configuration |
| Thermal Resistance (Rth(j-sp)) | 220 K/W - limits junction temperature rise to ≤55 °C at 250 mW dissipation with solder-point cooling |
| Package | SOT23 (TO-236AB) - 3-lead, 2.1 × 1.2 mm footprint compatible with standard SMD reflow profiles |
Pinout & Package
SOT23 plastic surface-mounted package (TO-236AB), 3-lead, 2.1 mm × 1.2 mm body, 0.95 mm height, 0.9 mm lead pitch, with gull-wing leads for automated assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode of Diode 1 | RF input path for first diode element; connects to series arm or shunt leg in switch topology |
| 2 | Anode of Diode 2 | RF input path for second diode element; enables differential or dual-path RF routing |
| 3 | Common Cathode | Shared DC return and RF ground reference; simplifies bias network design and reduces parasitic inductance |
Key Features
| Feature | Design Value |
|---|---|
| Low capacitance at low bias | 0.35 pF typical at VR = 1 V - maintains high isolation (>20 dB) below 2 GHz without tuning capacitors |
| Controlled forward resistance | 3 Ω at 10 mA - enables low-loss series switching with <0.3 dB IL in 50 Ω systems |
| Common-cathode dual-diode structure | Single-package integration of two matched PIN elements - eliminates inter-device mismatch in balanced switch designs |
| SOT23 thermal performance | Rth(j-sp) = 220 K/W - supports continuous 50 mA forward current with Tj ≤ 125 °C under PCB copper pour |
Applications
| RF Transmit/Receive Switch | RF Attenuator Cell |
|---|---|
Use Scenario: Bidirectional antenna switching in sub-3 GHz ISM-band transceivers (e.g., 868/915 MHz, 2.4 GHz). IC Role / Device Role / Timing Role: Dual-diode forms series–shunt SPDT switch: D1 in series path, D2 in shunt-to-ground path, both biased via shared cathode. Use Value: Achieves >30 dB isolation and <0.5 dB insertion loss using only one BAP50-05,215 and passive RC bias network. |
Use Scenario: Digitally controlled step attenuator in test equipment front-end with 0.5–10 dB range. IC Role / Device Role / Timing Role: Each diode functions as variable resistor in π- or T-network; forward current adjusts attenuation level. Use Value: rD variation from 40 Ω to 3 Ω across 0.5–10 mA enables monotonic 8 dB attenuation range with <0.2 dB step linearity. |
| Low-Noise Amplifier Protection | RF Filter Tuning Element |
Use Scenario: Input protection limiter for LNA stages exposed to transient RF overdrive (e.g., radar pulse leakage). IC Role / Device Role / Timing Role: Diodes placed in shunt configuration at LNA input; conduct during overvoltage to clamp signal. Use Value: Low Cd (≤0.5 pF) avoids degrading LNA noise figure; fast carrier sweep-out enables <10 ns response. |
Use Scenario: Tunable bandpass filter section in software-defined radio front-end (e.g., 700–2700 MHz cellular bands). IC Role / Device Role / Timing Role: Diode used as voltage-variable capacitor in varactor-like mode (reverse-biased) within LC tank. Use Value: Cd tunability from 0.45 pF (0 V) to 0.3 pF (5 V) provides ~15 MHz center-frequency shift per volt in 1 nH–2.2 pF resonator. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF PIN diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon BAR50-03W | Single PIN diode in SOT323; Cd = 0.3 pF at 1 V, rD = 2.5 Ω at 10 mA; no common-cathode dual configuration | Requires two devices and external cathode tie for dual-function use; smaller 1.7 × 1.25 mm footprint | Select when space-constrained layouts need lowest possible capacitance and discrete bias control per diode |
| ON Semiconductor MMBAP50-05 | Same dual common-cathode SOT23 structure; Cd = 0.37 pF at 1 V, rD = 3.2 Ω at 10 mA; Rth(j-sp) = 250 K/W | Near-identical RF performance but higher thermal resistance limits sustained 50 mA operation | Select when cross-manufacturer second-source assurance is required and thermal derating to 40 mA is acceptable |
Compared with BAR50-03W and MMBAP50-05, the BAP50-05,215 uniquely combines dual common-cathode integration, 220 K/W thermal resistance, and sub-0.35 pF capacitance at 1 V - making it optimal for compact, thermally demanding RF switches where layout simplicity and bias efficiency are critical.
Availability
BAP50-05,215 is available at Aetrix Electronics and suitable for RF front-end switching, programmable attenuators, and LNA protection circuits requiring stable component supply, consistent parametric binning, and full traceability from NXP's qualified production lots.
Supply support for BAP50-05,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and communication applications.
The BAP50-05,215 belongs to NXP's RF PIN diode product line, engineered specifically for high-isolation, low-loss switching and attenuation in sub-6 GHz wireless infrastructure, test equipment, and consumer RF modules.
FAQ
What is the maximum RF frequency range supported by the BAP50-05,215 in practical switching applications?
The BAP50-05,215 demonstrates usable RF performance up to 3 GHz, with measured insertion loss <0.5 dB and isolation >20 dB in series–shunt configurations at 2.4 GHz. Its 0.35 pF capacitance and 3 Ω forward resistance enable stable operation in 50 Ω systems through the ISM and LTE bands - verified in NXP's Figure 3 and Figure 4 up to 3 GHz.
Can the BAP50-05,215 be used in zero-bias (unpowered) RF switch applications?
Yes, the BAP50-05,215 operates effectively in zero-bias mode: at VR = 0 V, its capacitance is 0.45 pF (typ), delivering >25 dB isolation below 2 GHz as shown in Figure 4. This makes BAP50-05,215 suitable for fail-safe or low-power RF routing where active bias is unavailable or undesirable.
How does the common-cathode configuration of the BAP50-05,215 simplify RF switch design?
The common-cathode configuration of the BAP50-05,215 allows both diodes to share a single DC return path and bias network, reducing component count, PCB area, and parasitic inductance. In SPDT switch layouts, this eliminates the need for separate cathode traces - directly improving isolation and repeatability versus discrete dual-diode implementations.
What is the recommended forward current range to achieve optimal RF performance with the BAP50-05,215?
For best RF switching performance, operate the BAP50-05,215 between 1 mA and 10 mA forward current: at 1 mA, rD ≈ 25 Ω (moderate loss); at 10 mA, rD ≈ 3 Ω (<0.3 dB IL). Currents above 10 mA yield diminishing returns and increase self-heating - the datasheet specifies 50 mA absolute max, but 10 mA is the design sweet spot.
Is the BAP50-05,215 suitable for automotive applications?
No, the BAP50-05,215 is not automotive-qualified. Per NXP's legal information section, unless explicitly stated in the datasheet, the device is not tested or warranted for automotive use. It lacks AEC-Q200 qualification and is intended for industrial, communications, and consumer RF applications only.
BAP50-05,215 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Diode Type:
- PIN - 1 Pair Common Cathode
- Voltage - Peak Reverse (Max):
- 50V
- Current - Max:
- 50 mA
- Capacitance @ Vr, F:
- 0.5pF @ 5V, 1MHz
- Resistance @ If, F:
- 5Ohm @ 10mA, 100MHz
- Power Dissipation (Max):
- 250 mW
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Supplier Device Package:
- SOT-23 (TO-236AB)
BAP50-05,215 FAQ
1.How can I place an order for BAP50-05,215 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAP50-05,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAP50-05,215 reliable?
The price and inventory of BAP50-05,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAP50-05,215 is usually 5 days.
3.What payment methods are accepted for BAP50-05,215?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAP50-05,215 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAP50-05,215?
BAP50-05,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAP50-05,215 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAP50-05,215?
For technical support, including BAP50-05,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAP50-05,215 requirements.
6.How does Aetrix verify that BAP50-05,215 is sourced from the original manufacturer or authorized distributors?
All BAP50-05,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAP50-05,215 meets industry standards.
7.What is the process for return or replacement of BAP50-05,215?
All BAP50-05,215 units undergo pre-shipment inspection (PSI). If there is an issue with BAP50-05,215, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAP50-05,215 part is unused and in its original packaging.
Return procedure for BAP50-05,215:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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