NXP Semiconductors BAP50-05W,115

Overview

BAP50-05W from NXP Semiconductors is a dual-element silicon PIN diode in common cathode configuration, housed in an SOT323 plastic SMD package. It delivers 0.3–0.5 pF diode capacitance at 5 V reverse bias, ≤5 Ω forward resistance at 10 mA, and ≥13.5 dB isolation at 2450 MHz - enabling RF switching and attenuation in compact wireless front-ends.

For engineers reviewing the BAP50-05W datasheet, BAP50-05W pinout, BAP50-05W application, or BAP50-05W equivalent, key selection criteria include its dual-anode/common-cathode topology, low-series-inductance (1.6 nH), charge carrier lifetime (1.05 μs), and suitability for 900–2450 MHz band-switching in mobile transceivers and IoT antenna tuning circuits.

Technical Context

The BAP50-05W integrates two matched PIN diodes sharing a single cathode terminal, optimized for series-mode RF switching where low insertion loss (<0.36 dB at 2450 MHz) and high isolation (>13.5 dB at 2450 MHz) are required under 10 mA forward bias. Its planar construction ensures stable r_D and C_d across temperature.

Designed for DC–2.5 GHz operation, it uses silicon epitaxial processing to achieve tight parameter distribution (AQL S4, AQL 1.0) and supports fast switching via controlled τ_L = 1.05 μs - critical for TDD LTE and Wi-Fi 2.4 GHz time-domain duplexing paths.

Key Specifications

Pinout & Package

SOT323 plastic surface-mounted package (3 leads), dimensions: 2.2 mm × 1.35 mm × 1.15 mm, thermal resistance R_th(j-sp) = 250 K/W.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-PIN diode switching applications.

Compared with SKY13350-374LF and BAP64-05W, the BAP50-05W offers the only combination of common-cathode topology, guaranteed 13.5 dB isolation at 2450 MHz, and 1.05 μs τ_L - making it uniquely suited for space-constrained, single-bias RF switching where diode-level control and predictable transient response are required.

Availability

BAP50-05W is available at Aetrix Electronics and suitable for mobile antenna switching, Wi-Fi band selection, and IoT transceiver T/R switching requiring stable component supply, traceable sourcing, and lifecycle continuity.

Supply support for BAP50-05W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and mobile applications.

The BAP50-05W belongs to NXP's RF PIN diode portfolio designed specifically for high-frequency switching and attenuation in compact wireless infrastructure and portable devices operating up to 2.5 GHz.

FAQ

What is the maximum continuous reverse voltage rating for the BAP50-05W?

The BAP50-05W has a maximum continuous reverse voltage (V_R) rating of 50 V, as specified in the Absolute Maximum Ratings table. This rating applies under all operating conditions and must not be exceeded to prevent permanent device damage. The BAP50-05W is tested to this limit per IEC 60134, and its typical reverse current remains below 100 nA at 50 V, confirming robust junction integrity. Operating the BAP50-05W within this V_R limit ensures reliable performance in RF switch bias networks.

How does the common cathode configuration of the BAP50-05W simplify RF circuit design?

The common cathode configuration of the BAP50-05W allows both diodes to share a single DC return path, reducing the number of bias feedthroughs and decoupling capacitors needed on the PCB. This simplifies layout in dense RF sections and improves symmetry between switching paths. In practice, the BAP50-05W enables single-supply control of dual RF paths - for example, grounding pin 3 while driving pins 1 and 2 independently - which cuts bill-of-materials count and enhances repeatability in antenna diversity modules using the BAP50-05W.

What is the typical diode capacitance of the BAP50-05W at 1 V reverse bias?

The typical diode capacitance (C_d) of the BAP50-05W at 1 V reverse bias is 0.35 pF, with a maximum of 0.6 pF, as confirmed in Table 6 of the datasheet. This low, tightly controlled capacitance minimizes detuning effects in 50 Ω RF matching networks and supports stable impedance behavior across 900 MHz to 2.45 GHz. The BAP50-05W's C_d remains stable across process variation, supporting consistent RF performance in mass-produced consumer wireless devices.

Can the BAP50-05W be used in 5 GHz Wi-Fi applications?

The BAP50-05W is characterized up to 2450 MHz, with published isolation and insertion loss data ending at that frequency. While some customers may operate the BAP50-05W near 5 GHz under evaluation, NXP does not guarantee performance beyond 2.45 GHz - including C_d, r_D, or ISL - and no datasheet parameters are provided for 5 GHz. For 5 GHz Wi-Fi band selection, the BAP50-05W is not recommended; instead, consider switches explicitly rated for that band, such as the BAP70-05W or integrated alternatives.

What is the thermal resistance from junction to solder point (R_th(j-sp)) for the BAP50-05W?

The thermal resistance from junction to solder point (R_th(j-sp)) for the BAP50-05W is 250 K/W, as specified in Table 5 of the datasheet. This value reflects heat transfer efficiency under standard SMT reflow conditions and is used to calculate junction temperature rise above board temperature. With a total power dissipation limit of 240 mW and this R_th(j-sp), the BAP50-05W maintains safe operation in handheld RF modules where ambient PCB temperature stays below 90 °C - a key reliability factor in long-life BAP50-05W deployments.