NXP Semiconductors BAP50LX,315

Overview

BAP50LX from NXP Semiconductors is a silicon PIN diode optimized for RF switching and attenuation up to 3 GHz, featuring 0.19 pF typical diode capacitance at 5 V reverse bias, 3 Ω typical forward resistance at 10 mA, and 16.5 dB isolation at 2450 MHz. It serves as a high-speed RF switch in antenna tuning and transmit/receive (T/R) module signal path control.

For engineers reviewing the BAP50LX datasheet, BAP50LX pinout, BAP50LX application, or BAP50LX equivalent, key selection criteria include low capacitance for minimal RF loading, low r_D for insertion loss control, isolation performance across 900–2450 MHz bands, and compatibility with ultra-compact SOD882D (DFN1006D-2) PCB layouts.

Technical Context

The BAP50LX operates as a current-controlled RF resistor: forward bias reduces series resistance (r_D) to ≤5 Ω at 10 mA, enabling low-loss signal conduction; reverse bias increases impedance via depletion region expansion, achieving ≥16.5 dB isolation at 2.45 GHz. Its intrinsic layer enables fast carrier lifetime (1.0 μs) and stable C_d vs. voltage behavior.

Designed for surface-mount integration in 50 Ω RF transmission lines, the device uses a planar structure with cathode/anode terminals on a 1.0 × 0.6 × 0.4 mm DFN1006D-2 package. Thermal resistance from junction to solder point is 53 K/W, supporting continuous 50 mA forward current and 150 mW power dissipation at T_sp ≤ 90 °C.

Key Specifications

Pinout & Package

Package: DFN1006D-2 (SOD882D), leadless ultra-small plastic SMD package; body dimensions 1.0 × 0.6 × 0.4 mm; cathode indicated by marking bar.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF PIN diode switching applications.

Compared with BAR50-02VH6327XTSA1 and MMBD701LT1G, the BAP50LX delivers superior 2.45 GHz isolation and lowest C_d in its class, making it optimal for space-constrained Wi-Fi/BLE coexistence designs where RF path integrity is critical.

Availability

BAP50LX is available at Aetrix Electronics and suitable for RF front-end modules, antenna tuning circuits, and T/R switching applications requiring stable component supply, consistent parametric performance, and long-term production continuity.

Supply support for BAP50LX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company specializing in secure connectivity solutions for automotive, industrial, and consumer applications, with leadership in RF and analog technologies.

The BAP50LX belongs to NXP's high-frequency discrete diode product line, engineered specifically for compact, high-isolation RF switching in mobile and IoT wireless infrastructure where size, speed, and signal fidelity are critical.

FAQ

What is the maximum operating frequency of the BAP50LX?

The BAP50LX is characterized and specified for reliable operation up to 3 GHz, with measured isolation of 16.5 dB at 2450 MHz and insertion loss of 0.27 dB under 10 mA forward bias. Performance data in Figures 4 and 5 of the official datasheet confirm functional use through the entire 900 MHz to 2450 MHz range, supporting Wi-Fi, Bluetooth, and LTE bands.

Does the BAP50LX require a DC blocking capacitor in series RF configurations?

No, the BAP50LX does not require a DC blocking capacitor in series switch configurations because its anode and cathode terminals are designed for direct RF signal path insertion with external DC bias applied through RF chokes. The device's 50 V reverse voltage rating and low leakage (<100 nA @ 50 V) ensure safe biasing without unintended conduction or breakdown.

How is the cathode identified on the BAP50LX package?

The cathode of the BAP50LX is marked by a visible bar on the top surface of the DFN1006D-2 package, aligned with Pin 1 per Figure 1 and Table 1 of the datasheet. This marking corresponds to the physical terminal labeled "1" in the simplified outline, and must be oriented toward the circuit's DC ground or bias return path in shunt configurations.

What thermal derating applies to the BAP50LX at elevated board temperatures?

The BAP50LX has a thermal resistance R_th(j-sp) of 53 K/W and is rated for 150 mW total power dissipation only when solder-point temperature (T_sp) is ≤90 °C. At board temperatures exceeding 70 °C, forward current must be reduced below 50 mA to maintain T_j ≤150 °C - e.g., at T_sp = 85 °C, maximum continuous I_F drops to ~35 mA per thermal calculation.

Can the BAP50LX replace the BAP64-03 in existing designs?

No, the BAP50LX is not a direct replacement for the BAP64-03: the BAP64-03 is a dual-diode array in SOT-323, while the BAP50LX is a single-diode DFN1006D-2 device with different pinout, thermal profile, and isolation characteristics. Substitution would require PCB layout revision, bias network re-optimization, and re-validation of RF performance at target frequencies.