NXP Semiconductors BAP51-02,315

Overview

BAP51-02,315 from NXP Semiconductors is a silicon PIN diode in an SOD523 ultra-small surface-mount package, designed for RF switching and attenuation functions. It delivers 0.2–0.35 pF diode capacitance at 5 V reverse bias, 1.5–2.5 Ω forward resistance at 10 mA, and supports up to 60 V continuous reverse voltage - enabling compact, high-isolation RF front-end designs in mobile transceivers and antenna tuning modules.

For engineers reviewing the BAP51-02,315 datasheet, BAP51-02,315 pinout, BAP51-02,315 application, or BAP51-02,315 equivalent, key selection criteria include low-frequency insertion loss (<0.5 dB at 1 GHz on-state), off-state isolation (>20 dB at 1 GHz), AEC-Q101 qualification for automotive RF modules, and thermal resistance of 85 K/W for reliable power handling in space-constrained layouts.

Technical Context

The BAP51-02,315 operates as a current-controlled RF switch: forward bias reduces rD to sub-3 Ω (enabling low-loss signal path conduction), while reverse bias minimizes Cd to ≤0.35 pF (ensuring high off-state impedance). Its intrinsic layer enables linear RF behavior across 0.5–3 GHz, validated by typical insertion loss and isolation curves in Figures 3 and 4.

Thermal performance is defined by junction-to-solder-point resistance (Rth(j-sp) = 85 K/W), supporting continuous 50 mA forward current with Tj ≤ 150 °C when solder point temperature remains ≤90 °C. The device is qualified per AEC-Q101, confirming robustness under automotive thermal cycling and humidity stress.

Key Specifications

Pinout & Package

The BAP51-02,315 is housed in an SOD523 plastic surface-mounted package (1.25 × 0.85 × 0.65 mm), featuring a cathode-marked top-side bar and optimized thermal pad geometry per Figure 5.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF PIN diode applications.

Compared with BAR50-02VH6327XTSA1 and NSVRB5101MT1G, the BAP51-02,315 offers superior high-frequency isolation due to its 0.2 pF minimum capacitance and automotive-grade reliability - making it the preferred choice for 5G FR1 and 77 GHz radar front-ends where thermal stability and RF linearity are non-negotiable.

Availability

BAP51-02,315 is available at Aetrix Electronics and suitable for RF front-end modules, antenna tuning systems, and automotive radar transceivers requiring stable component supply, consistent parametric performance across production lots, and full traceability to NXP's certified wafer fab and assembly sites.

Supply support for BAP51-02,315 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT markets.

The BAP51-02,315 belongs to NXP's high-frequency discrete portfolio, engineered specifically for RF signal routing and protection in compact wireless infrastructure and automotive radar systems where low parasitic capacitance and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum reverse voltage rating for the BAP51-02,315?

The BAP51-02,315 has a continuous reverse voltage (VR) rating of 60 V, as specified in Table 4 of the official NXP datasheet Rev. 4.1. This rating applies under steady-state conditions with junction temperature maintained within −65 °C to +150 °C. Exceeding 60 V may cause irreversible breakdown. The BAP51-02,315 must be operated within this limit to ensure long-term reliability in RF switch and limiter circuits.

Is the BAP51-02,315 qualified for automotive applications?

Yes, the BAP51-02,315 is explicitly AEC-Q101 qualified, as confirmed in Section 1.2 of the NXP product data sheet. This qualification covers stress tests including temperature cycling, high-acceleration stress testing (HAST), and mechanical shock - validating its suitability for automotive infotainment, telematics, and ADAS radar modules. The BAP51-02,315 meets the reliability requirements for under-hood and cabin-mounted RF subsystems.

What is the typical diode capacitance of the BAP51-02,315 at 5 V reverse bias?

The typical diode capacitance (Cd) of the BAP51-02,315 is 0.2 pF at VR = 5 V and f = 1 MHz, with a maximum of 0.35 pF under the same conditions (Table 6). This ultra-low capacitance enables high off-state impedance and >20 dB isolation above 1 GHz in 50 Ω systems. The BAP51-02,315 achieves this performance due to its optimized intrinsic layer thickness and SOD523 package parasitics.

How does the forward resistance of the BAP51-02,315 vary with bias current?

The forward resistance (rD) of the BAP51-02,315 decreases with increasing forward current: it is 5.5–9 Ω at IF = 0.5 mA, 3.6–6.5 Ω at IF = 1 mA, and 1.5–2.5 Ω at IF = 10 mA (Table 6). This nonlinear behavior reflects carrier injection into the intrinsic region. For low-loss RF switching, the BAP51-02,315 is typically biased at ≥10 mA to achieve rD < 2.5 Ω and minimize insertion loss.

What package type is used for the BAP51-02,315, and how is polarity marked?

The BAP51-02,315 uses the SOD523 plastic surface-mounted package (1.25 × 0.85 × 0.65 mm), per Table 2 and Figure 5. Polarity is marked by a bar on the top surface indicating the cathode (Pin 1); the anode is Pin 2. This marking aligns with JEDEC SC-79 and IEC package standards, ensuring unambiguous orientation during automated placement. The BAP51-02,315's SOD523 footprint supports high-density RF layout with minimal parasitic inductance.