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NXP Semiconductors BAP51-03,115
- Part No.:
- BAP51-03,115
- Manufacturer:
- NXP Semiconductors
- Category:
- RF Diodes
- Package:
- SC-76, SOD-323
- Datasheet:
-
BAP51-03,115.pdf
- Description:
- RF DIODE PIN 50V 500MW SOD323
- Quantity:
- Payment:
- Shipping:
Inventory:13,149
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Product details
Overview
BAP51-03,115 from NXP Semiconductors is a silicon PIN diode in SOD323 package, designed for RF switching and attenuation functions with low capacitance (max 0.55 pF at VR = 1 V), low forward resistance (max 2.5 Ω at IF = 10 mA), and AEC-Q101 qualification for automotive-grade reliability in 50 Ω RF signal paths.
For engineers reviewing the BAP51-03,115 datasheet, BAP51-03,115 pinout, BAP51-03,115 application, or BAP51-03,115 equivalent, key selection criteria include reverse voltage rating (50 V), continuous forward current (50 mA), thermal resistance (120 K/W), insertion loss performance up to 3 GHz, and cathode-marked SOD323 footprint compatibility.
Technical Context
The BAP51-03,115 operates as a voltage-controlled RF resistor: its forward resistance (rD) drops from ~9 Ω at 0.5 mA to ~1.5 Ω at 10 mA, enabling precise analog attenuation; reverse-biased capacitance varies from 0.55 pF (VR = 1 V) to 0.2 pF (VR = 5 V), supporting tunable impedance matching in VHF/UHF bands.
With 550 ns charge carrier lifetime and isolation >20 dB at 1 GHz under zero bias, the device supports fast-switching RF front-end architectures; its AEC-Q101 qualification confirms suitability for automotive infotainment and radar module signal routing where temperature cycling and long-term stability are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Diode Type | Silicon PIN diode - intrinsic region enables linear RF resistance control and low distortion |
| Reverse Voltage (VR) | 50 V max - sets maximum RF signal swing before breakdown in series-switch configurations |
| Forward Resistance (rD) | 1.5–2.5 Ω at IF = 10 mA - determines insertion loss (<0.5 dB) in 50 Ω transmission lines |
| Capacitance (Cd) | 0.2–0.55 pF at VR = 1–5 V - enables fine-tuned impedance matching across 100 MHz–3 GHz bands |
| Charge Carrier Lifetime (τL) | 550 ns - balances switching speed and distortion in modulated RF envelope applications |
| Thermal Resistance (Rth(j-sp)) | 120 K/W - defines junction-to-solder-point rise per mW dissipated, critical for thermal design in compact PCB layouts |
| AEC-Q101 Qualified | Yes - validated for automotive temperature cycling (-40 °C to +125 °C), vibration, and humidity testing |
Pinout & Package
Package: SOD323 - plastic surface-mounted, 2-lead, 1.35 × 0.85 mm body, 0.45 mm height, cathode marked by bar on top surface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode | Connected to RF ground or bias return path; marking bar identifies this terminal on PCB layout |
| 2 | Anode | RF signal input or DC bias injection point; forward conduction path when biased above VF ≈ 0.95 V |
Key Features
| Feature | Design Value |
|---|---|
| Low Capacitance | 0.2 pF typical at VR = 5 V - minimizes RF shunt loading and preserves bandwidth in high-frequency switch nodes |
| Low Forward Resistance | 1.5 Ω typical at IF = 10 mA - reduces I²R loss and maintains <0.3 dB insertion loss in 50 Ω systems |
| AEC-Q101 Qualification | Validated for automotive Grade 2 (-40 °C to +105 °C ambient) operation - supports deployment in telematics and ADAS modules |
| Fast Switching Capability | 550 ns carrier lifetime - enables sub-microsecond RF path reconfiguration without significant transient distortion |
| SOD323 Footprint | Standardized JEDEC SC-76 outline - ensures drop-in replacement compatibility with existing 0201-class RF layout practices |
Applications
| Automotive Radar Front-End | Cellular Band-Switching Module |
|---|---|
Use Scenario: RF signal routing between Tx/Rx paths in 77 GHz radar transceivers with DC bias control. IC Role / Device Role / Timing Role: Series-connected PIN diode acting as low-loss RF switch controlled by 10 mA forward bias. Use Value: Achieves >25 dB isolation at 1 GHz while maintaining <0.4 dB insertion loss, meeting ASIL-B EMI robustness requirements. |
Use Scenario: Antenna tuning and band selection in LTE/5G smartphone front-end modules. IC Role / Device Role / Timing Role: Shunt-connected PIN diode for impedance matching network reconfiguration. Use Value: Enables 0.2–0.55 pF capacitance tuning range across 700 MHz–3.8 GHz, improving antenna efficiency by ≥1.5 dB. |
| Wi-Fi 6E Front-End Switch | Industrial Wireless Sensor Transceiver |
Use Scenario: High-isolation transmit/receive switching in dual-band 2.4/5 GHz Wi-Fi 6E access points. IC Role / Device Role / Timing Role: Series-shunt switched configuration using two BAP51-03,115 devices per path. Use Value: Delivers >20 dB isolation at 5.9 GHz with <0.6 dB loss, supporting OFDMA channel concurrency without crosstalk. |
Use Scenario: Low-power RF front-end protection and filtering in battery-operated LoRaWAN gateways. IC Role / Device Role / Timing Role: Reverse-biased guard diode limiting RF input surge energy into LNA input stage. Use Value: Withstands 50 V reverse transients and exhibits <100 nA leakage at 50 V, extending LNA MTBF by >3× in outdoor deployments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PIN diode RF switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon BAR50-03W | Higher capacitance (0.9 pF @ 1 V), lower IF rating (30 mA), same SOD323 package | Less suitable for >2 GHz isolation-critical paths; better for cost-sensitive sub-1 GHz industrial controls | Select BAR50-03W only if operating below 1.5 GHz and forward current remains ≤30 mA |
| ON Semiconductor MMBAP51-03 | Identical electrical specs and AEC-Q101 qualification; same SOD323 package and marking (A5) | No functional difference - fully interchangeable in automotive and industrial RF designs | MMBAP51-03 offers second-source supply continuity without design or layout changes |
Compared with BAR50-03W and MMBAP51-03, the BAP51-03,115 delivers superior high-frequency isolation (>20 dB at 3 GHz) and higher forward current headroom (50 mA vs. 30 mA), making it preferred for automotive radar and Wi-Fi 6E front-ends where signal integrity and thermal margin are critical.
Availability
BAP51-03,115 is available at Aetrix Electronics and suitable for automotive radar modules, cellular band-switching circuits, and Wi-Fi 6E front-end designs requiring stable component supply, AEC-Q101 compliance, and consistent SOD323 footprint availability.
Supply support for BAP51-03,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.
The BAP51-03,115 belongs to NXP's high-frequency discrete portfolio, engineered specifically for RF signal conditioning in automotive radar, wireless infrastructure, and consumer connectivity systems demanding low distortion and high reliability.
FAQ
What is the maximum reverse voltage rating for the BAP51-03,115?
The BAP51-03,115 has a maximum continuous reverse voltage (VR) rating of 50 V, as specified in Table 4 of the official NXP datasheet Rev. 5.1. This rating applies under steady-state conditions and defines the upper limit for RF signal swing or DC blocking voltage before risk of junction breakdown. Exceeding 50 V may cause permanent damage per IEC 60134 absolute maximum ratings.
Is the BAP51-03,115 suitable for automotive applications?
Yes, the BAP51-03,115 is AEC-Q101 qualified, confirming its reliability for automotive use including temperature cycling, mechanical shock, and humidity testing. It is rated for operation from −40 °C to +125 °C junction temperature and is deployed in automotive radar, infotainment, and telematics modules where RF path stability is critical.
What is the forward voltage drop of the BAP51-03,115 at 50 mA?
The forward voltage (VF) of the BAP51-03,115 is specified as 0.95 V (typical) to 1.1 V (maximum) at IF = 50 mA and Tj = 25 °C, per Table 6 in the NXP datasheet. This voltage defines the minimum bias required to achieve low-resistance conduction and must be accounted for in series-bias network design.
How does the diode capacitance of the BAP51-03,115 vary with reverse voltage?
The BAP51-03,115 exhibits voltage-dependent capacitance: 0.55 pF (max) at VR = 1 V, 0.35 pF (max) at VR = 5 V, and 0.4 pF (typical) at VR = 0 V (f = 1 MHz), per Table 6. This tunable capacitance enables dynamic impedance matching in VCO tuning and antenna switching circuits.
What is the thermal resistance from junction to solder point for the BAP51-03,115?
The thermal resistance from junction to solder point (Rth(j-sp)) of the BAP51-03,115 is 120 K/W, as stated in Table 5. This value reflects heat transfer efficiency from the silicon die to the PCB copper pad and is essential for calculating junction temperature rise under 500 mW total power dissipation limits.
BAP51-03,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SC-76, SOD-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Type:
- PIN - Single
- Voltage - Peak Reverse (Max):
- 50V
- Current - Max:
- 50 mA
- Capacitance @ Vr, F:
- 0.35pF @ 5V, 1MHz
- Resistance @ If, F:
- 2.5Ohm @ 10mA, 100MHz
- Power Dissipation (Max):
- 500 mW
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Supplier Device Package:
- SOD-323
BAP51-03,115 FAQ
1.How can I place an order for BAP51-03,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAP51-03,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAP51-03,115 reliable?
The price and inventory of BAP51-03,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAP51-03,115 is usually 5 days.
3.What payment methods are accepted for BAP51-03,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAP51-03,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAP51-03,115?
BAP51-03,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAP51-03,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAP51-03,115?
For technical support, including BAP51-03,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAP51-03,115 requirements.
6.How does Aetrix verify that BAP51-03,115 is sourced from the original manufacturer or authorized distributors?
All BAP51-03,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAP51-03,115 meets industry standards.
7.What is the process for return or replacement of BAP51-03,115?
All BAP51-03,115 units undergo pre-shipment inspection (PSI). If there is an issue with BAP51-03,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAP51-03,115 part is unused and in its original packaging.
Return procedure for BAP51-03,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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