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NXP Semiconductors BAP55L,315
- Part No.:
- BAP55L,315
- Manufacturer:
- NXP Semiconductors
- Category:
- RF Diodes
- Package:
- SOD-882
- Datasheet:
-
BAP55L,315.pdf
- Description:
- RF DIODE PIN 50V 500MW DFN1006-2
- Quantity:
- Payment:
- Shipping:
Inventory:9,794
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Product details
Overview
BAP55L,315 from NXP Semiconductors is a silicon planar PIN diode in a leadless SOD882 package, designed for high-speed RF switching up to 3 GHz. It delivers low forward resistance (0.4–0.7 Ω at 100 mA), very low series inductance (0.6 nH), and low diode capacitance (0.18–0.28 pF at 20 V reverse bias), enabling precise control in RF attenuators and switches.
For engineers reviewing the BAP55L,315 datasheet, BAP55L,315 pinout, BAP55L,315 application, or BAP55L,315 equivalent, key selection criteria include RF isolation (17.6 dB @ 900 MHz), insertion loss (as low as 0.05 dB @ 900 MHz/100 mA), charge carrier lifetime (0.28 µs), and thermal resistance (100 K/W) - all critical for 5G front-end, cellular infrastructure, and Wi-Fi 6 RF path design.
Technical Context
The BAP55L,315 operates as a current-controlled RF series switch: forward bias modulates its low rD (0.4–3.4 Ω across 0.5–100 mA), while reverse bias enables high isolation via minimal Cd (0.18 pF) and ultra-low LS (0.6 nH). Its planar PIN structure ensures predictable carrier lifetime (0.28 µs) for fast switching between RF signal paths.
Designed for stripline integration in 50 Ω systems, it exhibits frequency-dependent s-parameters: |s21|² insertion loss improves with higher IF (0.05 dB @ 900 MHz/100 mA), while |s12|² isolation degrades above 900 MHz (11.1 dB @ 2450 MHz), confirming optimal use below 2.5 GHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| RF Frequency Range | DC to 3 GHz - supports cellular bands (700–2700 MHz) and Wi-Fi 2.4 GHz without parasitic resonance |
| Diode Capacitance (Cd) | 0.18 pF @ VR = 20 V - enables high isolation and minimal signal coupling in RF switch nodes |
| Forward Resistance (rD) | 0.4 Ω @ IF = 100 mA - reduces insertion loss and power dissipation in high-current RF paths |
| Series Inductance (LS) | 0.6 nH - preserves impedance matching and bandwidth integrity in mmWave-adjacent layouts |
| Charge Carrier Lifetime (τL) | 0.28 µs - ensures sub-microsecond switching speed for TDD/FDD mode transitions |
| Thermal Resistance (Rth(j-sp)) | 100 K/W - allows stable operation at 500 mW total power dissipation with solder-point cooling |
Pinout & Package
SOD882 is a leadless ultra-small plastic package measuring 1.0 × 0.6 × 0.5 mm, with exposed die pad for thermal conduction and top-side cathode marking bar.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode | RF return path and DC bias sink; marked by physical bar on top surface |
| 2 | Anode | RF input/output and forward current entry point; connects to bias network via series resistor |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low series inductance | 0.6 nH enables stable RF performance beyond 2 GHz without layout de-embedding |
| Low capacitance under reverse bias | 0.18 pF at 20 V ensures >17 dB isolation at 900 MHz in 50 Ω systems |
| Current-tunable insertion loss | 0.05 dB @ 100 mA/900 MHz vs. 0.25 dB @ 0.5 mA - supports dynamic RF gain control |
| Fast carrier lifetime | 0.28 µs supports LTE/5G TDD frame switching with <1 µs settling time |
Applications
| Cellular Front-End Module | Wi-Fi 6 Transceiver Switching |
|---|---|
Use Scenario: RF path selection between PA output and antenna in multi-band LTE/5G handsets. IC Role / Device Role / Timing Role: Series-connected PIN diode acting as current-controlled RF switch with sub-µs turn-on/off. Use Value: 0.05 dB insertion loss at 100 mA enables >30 dBm PA output delivery with minimal efficiency penalty. | Use Scenario: Antenna diversity switching between 2.4 GHz transmit/receive chains in Wi-Fi 6 access points. IC Role / Device Role / Timing Role: Low-capacitance shunt/series switch controlling signal routing in MIMO RF front-end. Use Value: 0.23 pF capacitance at 1 V reverse bias minimizes detuning of 2.4 GHz matching networks. |
| ISM Band RF Attenuator | Test Equipment Signal Routing |
Use Scenario: Precision step attenuator in 2.45 GHz industrial heating controllers requiring 0.1 dB resolution. IC Role / Device Role / Timing Role: Current-biased PIN diode operating in quasi-linear resistive region (rD = 0.8–1.2 Ω). Use Value: Forward resistance tunability across 10 mA enables 10 dB attenuation range with monotonic control. | Use Scenario: Signal path multiplexing in automated RF test fixtures for 900 MHz–2.5 GHz device validation. IC Role / Device Role / Timing Role: High-isolation series switch isolating DUT ports during calibration sweeps. Use Value: 17.6 dB isolation at 900 MHz prevents crosstalk between source and measurement channels. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF PIN diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MACOM MADP-000907-14020T | Higher IF rating (200 mA), lower Cd (0.12 pF @ 20 V), but larger SOT-23 package (2.9 × 1.3 mm) | Better suited for high-power base station switches; less ideal for space-constrained mobile modules | Select when >100 mA forward current or <0.15 pF capacitance is required, accepting larger PCB footprint |
| Infineon BAR50-02VH6327XTSA1 | Lower VF (0.85 V typ), higher IR (100 nA @ 20 V), same SOD-882 package and 3 GHz rating | Acceptable for cost-sensitive consumer Wi-Fi designs where leakage tolerance >10 nA | Select for budget-sensitive production where 0.28 µs τL and 0.6 nH LS are non-critical |
Compared with MADP-000907-14020T and BAR50-02VH6327XTSA1, the BAP55L,315 uniquely balances ultra-small SOD882 size, 0.6 nH inductance, and 0.28 µs carrier lifetime - making it optimal for miniaturized 5G handset front-ends requiring fast TDD switching without layout compromise.
Availability
BAP55L,315 is available at Aetrix Electronics and suitable for cellular infrastructure, Wi-Fi 6 client devices, and ISM band RF attenuators requiring stable component supply, consistent parametric performance, and long-term lifecycle support.
Supply support for BAP55L,315 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and mobile applications.
The BAP55L,315 belongs to NXP's RF PIN diode product line, engineered specifically for high-frequency switching and attenuation in compact wireless infrastructure and portable RF systems.
FAQ
What is the maximum RF frequency supported by the BAP55L,315?
The BAP55L,315 is characterized for operation up to 3 GHz, with verified isolation (17.6 dB) and insertion loss (0.05 dB) performance at 900 MHz, 1800 MHz, and 2450 MHz. Its 0.6 nH series inductance and 0.18 pF capacitance maintain functional RF switching behavior through the upper edge of the 2.6 GHz LTE band, though datasheet validation ends at 3 GHz.
How does forward current affect insertion loss in the BAP55L,315?
In the BAP55L,315, insertion loss decreases with increasing forward current due to reduced forward resistance: |s21|² drops from 0.25 dB at 0.5 mA to 0.05 dB at 100 mA (900 MHz). This current-dependent rD (0.4–3.4 Ω) enables analog RF attenuation control without external DACs or complex bias networks.
What is the thermal resistance of the BAP55L,315 and how does it impact power handling?
The BAP55L,315 has a junction-to-soldering-point thermal resistance of 100 K/W. At its rated 500 mW total power dissipation and 90 °C soldering point temperature, this allows a maximum junction temperature of 140 °C - within its 150 °C absolute max rating - provided PCB copper area provides adequate heat spreading from the SOD882 exposed pad.
Is the BAP55L,315 suitable for automotive applications?
No, the BAP55L,315 is not automotive qualified. NXP explicitly states in the datasheet that unless otherwise specified, their products - including the BAP55L,315 - are not tested or warranted for automotive use, safety-critical systems, or life-support equipment. Use in automotive environments requires separate qualification and risk assessment by the customer.
What marking code identifies the BAP55L,315 on the SOD882 package?
The BAP55L,315 is marked with the code "E6" on the top surface of the SOD882 package. The marking bar adjacent to the "E6" symbol indicates the cathode terminal (Pin 1), providing unambiguous polarity identification during automated optical inspection and placement.
BAP55L,315 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SOD-882
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Diode Type:
- PIN - Single
- Voltage - Peak Reverse (Max):
- 50V
- Current - Max:
- 100 mA
- Capacitance @ Vr, F:
- 0.28pF @ 20V, 1MHz
- Resistance @ If, F:
- 700mOhm @ 100mA, 100MHz
- Power Dissipation (Max):
- 500 mW
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Supplier Device Package:
- DFN1006-2
BAP55L,315 FAQ
1.How can I place an order for BAP55L,315 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAP55L,315 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAP55L,315 reliable?
The price and inventory of BAP55L,315 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAP55L,315 is usually 5 days.
3.What payment methods are accepted for BAP55L,315?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAP55L,315 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAP55L,315?
BAP55L,315 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAP55L,315 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAP55L,315?
For technical support, including BAP55L,315 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAP55L,315 requirements.
6.How does Aetrix verify that BAP55L,315 is sourced from the original manufacturer or authorized distributors?
All BAP55L,315 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAP55L,315 meets industry standards.
7.What is the process for return or replacement of BAP55L,315?
All BAP55L,315 units undergo pre-shipment inspection (PSI). If there is an issue with BAP55L,315, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAP55L,315 part is unused and in its original packaging.
Return procedure for BAP55L,315:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAP55L,315 Tags
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