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NXP Semiconductors BAP63-02,115
- Part No.:
- BAP63-02,115
- Manufacturer:
- NXP Semiconductors
- Category:
- RF Diodes
- Package:
- SC-79, SOD-523
- Datasheet:
-
BAP63-02,115.pdf
- Description:
- RF DIODE PIN 50V 715MW SOD523
- Quantity:
- Payment:
- Shipping:
Inventory:9,682
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Product details
Overview
BAP63-02,115 from NXP Semiconductors is a silicon PIN diode optimized for high-frequency RF switching and attenuation up to 3 GHz, featuring 0.25–0.32 pF reverse-biased capacitance at 1–20 V, 0.9–1.5 Ω forward resistance at 100 mA/100 MHz, and 310 ns charge carrier lifetime. It operates in RF front-end modules, antenna tuning circuits, and cellular transceiver signal paths.
For engineers reviewing the BAP63-02,115 datasheet, BAP63-02,115 pinout, BAP63-02,115 application, or BAP63-02,115 equivalent, key selection criteria include low series inductance (0.6 nH), isolation >15.6 dB at 900 MHz, insertion loss <0.1 dB at 100 mA/900 MHz, and SOD523 package compatibility with high-density RF layouts.
Technical Context
The BAP63-02,115 uses a planar silicon PIN structure with low-charge-carrier lifetime (310 ns) to enable fast RF switching transitions between on- and off-states. Its ultra-low series inductance (0.6 nH) and minimal package parasitics support stable impedance matching in 50 Ω stripline configurations up to 2.45 GHz.
Forward resistance scales inversely with bias current - from 2.5 Ω at 0.5 mA to 0.9 Ω at 100 mA - enabling precise RF attenuation control. Diode capacitance drops from 0.36 pF at 0 V to 0.25 pF at 20 V reverse bias, ensuring consistent tuning range across wideband cellular bands (900/1800/2450 MHz).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Capacitance (VR = 20 V) | 0.25–0.32 pF - enables broadband impedance stability in LTE/Wi-Fi front-end switches |
| Forward Resistance (IF = 100 mA) | 0.9–1.5 Ω - minimizes insertion loss (<0.09 dB at 900 MHz) in series-switched RF paths |
| Isolation (VR = 0 V, 900 MHz) | 15.6 dB typical - provides sufficient off-state blocking for cellular band-select filtering |
| Charge Carrier Lifetime | 310 ns - balances switching speed and distortion for TDMA/OFDMA burst-mode operation |
| Series Inductance | 0.6 nH - preserves S-parameter integrity in compact 50 Ω PCB traces without de-embedding |
| Max Reverse Voltage | 50 V - supports biasing headroom for 28 V RF power amplifier control interfaces |
| Thermal Resistance (j–s) | 85 K/W - allows continuous 100 mA operation with ≤90 °C solder point temperature |
Pinout & Package
Package: SOD523 - ultra-small surface-mount plastic package (1.25 × 0.85 × 0.65 mm), cathode marked by bar on top surface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | cathode | RF return path in shunt switch configuration; connects to ground plane or DC blocking capacitor |
| 2 | anode | RF signal input/output node in series switch; requires DC bias feed via RF choke or π-network |
Key Features
| Feature | Design Value |
|---|---|
| High-speed RF switching | 310 ns carrier lifetime enables sub-microsecond state transitions in TDD-LTE time slots |
| Ultra-low capacitance variation | 0.36 → 0.25 pF over 0–20 V reverse bias ensures monotonic tuning response in varactor-like use |
| Low forward resistance at high IF | 0.9 Ω at 100 mA reduces I²R heating and maintains linearity in high-power receive paths |
| Minimal series inductance | 0.6 nH avoids resonance peaks above 2 GHz, simplifying matching network design |
| SOD523 footprint | 1.25 × 0.85 mm outline supports miniaturized 4G/5G MIMO antenna tuners and diversity switches |
Applications
| Cellular Front-End Switching | Wi-Fi 2.4 GHz Band Selection |
|---|---|
Use Scenario: Antenna switching between LTE Band 1 and Band 3 in dual-SIM smartphones. IC Role / Device Role / Timing Role: Series-connected RF switch controlling signal path between PA output and antenna port. Use Value: 0.09 dB insertion loss at 100 mA/900 MHz preserves transmit efficiency; 15.6 dB isolation prevents inter-band coupling. |
Use Scenario: Dynamic selection between 2.4 GHz Wi-Fi and Bluetooth coexistence antennas. IC Role / Device Role / Timing Role: Shunt-mode attenuator adjusting coupling strength in diversity receive chains. Use Value: 0.25 pF capacitance at 1 V reverse bias enables fine-grained impedance tuning without external varactors. |
| ISM Band Transceiver Protection | UWB Pulse Generator Bias Control |
Use Scenario: Transmit/receive (T/R) switching in 2.4 GHz ISM-band IoT transceivers. IC Role / Device Role / Timing Role: Low-inductance series switch isolating LNA input during PA transmit bursts. Use Value: 0.6 nH LS prevents self-resonance near 2.45 GHz, maintaining >10 dB isolation across full band. |
Use Scenario: Fast gating of ultra-wideband pulse generators in radar proximity sensors. IC Role / Device Role / Timing Role: High-speed on/off gate controlling pulse edge timing with nanosecond precision. Use Value: 310 ns τL supports ≤3 MHz pulse repetition rates while retaining clean rise/fall edges. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF PIN diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon BAR63-02W | Higher Cd (0.45 pF @ 0 V); same SOD523 package; 0.75 nH LS | Lower isolation (13.2 dB @ 900 MHz); less suitable for high-isolation LTE front ends | Preferable where lower cost outweighs 2.4 dB isolation penalty in non-critical receive paths |
| ON Semiconductor NSVRB63-02T1G | Identical Cd and rD specs; 0.65 nH LS; AEC-Q200 qualified | Automotive-grade qualification adds thermal robustness but no RF performance gain | Required for automotive infotainment RF modules; otherwise functionally interchangeable with BAP63-02,115 |
Compared with BAR63-02W and NSVRB63-02T1G, the BAP63-02,115 delivers best-in-class isolation at 900 MHz and lowest series inductance, making it optimal for space-constrained, high-efficiency cellular front-end designs where RF integrity is critical.
Availability
BAP63-02,115 is available at Aetrix Electronics and suitable for cellular baseband modules, Wi-Fi 6 front-end designs, and ISM-band IoT transceivers requiring stable component supply and long-term production continuity.
Supply support for BAP63-02,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and mobile applications.
The BAP63-02,115 belongs to NXP's RF PIN diode product line, engineered specifically for high-frequency switching and attenuation in compact wireless infrastructure and consumer RF front ends.
FAQ
What is the maximum operating frequency of the BAP63-02,115?
The BAP63-02,115 is characterized for operation up to 3 GHz, with measured isolation and insertion loss data provided at 900 MHz, 1800 MHz, and 2450 MHz. Its 0.25 pF capacitance at 20 V reverse bias and 0.6 nH series inductance ensure usable RF performance through the entire 2.4 GHz ISM band and into lower 5G NR n41 sub-band frequencies.
How does forward current affect insertion loss in the BAP63-02,115?
Insertion loss in the BAP63-02,115 decreases with increasing forward current due to reduced forward resistance: at 0.5 mA it is 0.28 dB (2450 MHz), dropping to 0.18 dB at 100 mA. This direct correlation allows designers to tune RF path loss dynamically via bias current, supporting adaptive attenuation in software-defined radio architectures.
Is the BAP63-02,115 suitable for DC blocking applications?
No - the BAP63-02,115 is not rated for continuous DC blocking. Its 50 V reverse voltage rating applies only to transient or bias conditions, and its low reverse leakage (≤10 nA at 35 V) reflects leakage under RF switching bias, not sustained DC blocking capability. For DC blocking, dedicated high-voltage RF capacitors or series-coupled configurations are required.
What is the thermal resistance from junction to soldering point for the BAP63-02,115?
The BAP63-02,115 has a thermal resistance of 85 K/W from junction to soldering point (Rth j–s). This value enables reliable operation at 100 mA forward current when the PCB solder point remains at or below 90 °C, supporting continuous-duty use in thermally constrained RF modules without active cooling.
Does the BAP63-02,115 have a documented pin-compatible replacement?
No documented pin-compatible replacement exists for the BAP63-02,115. While BAR63-02W and NSVRB63-02T1G share the SOD523 package and pinout, neither is specified as pin-to-pin compatible in official documentation. Layout reuse requires verification of parasitic differences - especially series inductance (0.75 nH vs. 0.6 nH) and capacitance curves - before substitution.
BAP63-02,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SC-79, SOD-523
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Diode Type:
- PIN - Single
- Voltage - Peak Reverse (Max):
- 50V
- Current - Max:
- 100 mA
- Capacitance @ Vr, F:
- 0.32pF @ 20V, 1MHz
- Resistance @ If, F:
- 1.5Ohm @ 100mA, 100MHz
- Power Dissipation (Max):
- 715 mW
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Supplier Device Package:
- SOD-523
BAP63-02,115 FAQ
1.How can I place an order for BAP63-02,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAP63-02,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAP63-02,115 reliable?
The price and inventory of BAP63-02,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAP63-02,115 is usually 5 days.
3.What payment methods are accepted for BAP63-02,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAP63-02,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAP63-02,115?
BAP63-02,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAP63-02,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAP63-02,115?
For technical support, including BAP63-02,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAP63-02,115 requirements.
6.How does Aetrix verify that BAP63-02,115 is sourced from the original manufacturer or authorized distributors?
All BAP63-02,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAP63-02,115 meets industry standards.
7.What is the process for return or replacement of BAP63-02,115?
All BAP63-02,115 units undergo pre-shipment inspection (PSI). If there is an issue with BAP63-02,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAP63-02,115 part is unused and in its original packaging.
Return procedure for BAP63-02,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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