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Home > Products > Discrete Semiconductor Products > Diodes > RF Diodes

NXP Semiconductors BAP63-03,115

Name: BAP63-03,115
Brand: NXP Semiconductors
SKU: BAP63-03,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BAP63-03,115

Manufacturer:: NXP Semiconductors

Category:: RF Diodes

Package:: SC-76, SOD-323

Datasheet:: BAP63-03,115.pdf

Description:: RF DIODE PIN 50V 500MW SOD323

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BAP63-03,115 from NXP Semiconductors is a silicon PIN diode in SOD323 package optimized for RF switching and attenuation up to 3 GHz, featuring 0.27–0.32 pF reverse-biased capacitance at 20 V, <1.5 Ω forward resistance at 100 mA, and 0.10 dB insertion loss at 900 MHz under full conduction - deployed in cellular front-end modules and antenna tuning circuits.

For engineers reviewing the BAP63-03,115 datasheet, BAP63-03,115 pinout, BAP63-03,115 application, or BAP63-03,115 equivalent, key selection criteria include RF isolation (15.4 dB @ 900 MHz), low series inductance (1.5 nH), thermal resistance (120 K/W), and SOD323 footprint compatibility with high-density RF layouts.

Technical Context

The BAP63-03,115 operates as a voltage-controlled RF series switch or shunt attenuator via forward/reverse biasing of its intrinsic PIN junction. Its low charge carrier lifetime (310 ns) enables fast RF signal gating, while planar construction minimizes parasitic inductance and ensures stable S-parameter behavior through 2.45 GHz.

It functions in two primary states: forward-biased (low r_D, <1.5 Ω at 100 mA) for minimal insertion loss, and reverse-biased (low C_d, 0.27 pF at 20 V) for high off-state isolation. Bias network design must accommodate its 100 mA absolute max forward current and 50 V reverse voltage rating.

Key Specifications

Parameter	Value and Actual Design Meaning
Diode capacitance (C_d)	0.27–0.32 pF at VR = 20 V, 1 MHz - enables high off-state impedance and >15 dB isolation below 1 GHz
Forward resistance (r_D)	0.9–1.5 Ω at IF = 100 mA, 100 MHz - ensures sub-0.1 dB RF insertion loss in series-switch configuration
Series inductance (L_S)	1.5 nH - limits self-resonance frequency and preserves broadband performance up to 3 GHz
Charge carrier lifetime (τ_L)	310 ns - supports switching speeds suitable for TDMA burst-mode RF control
Thermal resistance (R_th(j-s))	120 K/W - defines maximum allowable power dissipation (500 mW at T_s ≤ 90 °C) in PCB-mounted operation
Isolation \|s21\|²	15.4 dB at 900 MHz, VR = 0 V - quantifies RF signal blocking capability in off-state antenna switching

Pinout & Package

Package: SOD323 - ultra-compact surface-mount plastic package (1.35 × 0.85 × 0.45 mm), cathode marked by bar on top surface, compatible with reflow soldering per JEDEC J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1	Cathode	Connected to RF ground or bias return path; polarity-sensitive for correct DC bias and RF signal routing
2	Anode	Primary RF signal path entry in series configuration; requires DC blocking capacitor when used in AC-coupled RF lines

Key Features

Feature	Design Value
High-speed RF switching	310 ns carrier lifetime enables <1 µs transition between on/off states for GSM/EDGE burst timing
Low forward resistance	r_D ≤ 1.5 Ω at 100 mA ensures <0.1 dB insertion loss in 50 Ω systems at 900 MHz
Ultra-low diode capacitance	C_d = 0.27 pF at 20 V reverse bias delivers >10 dB isolation margin above 1.8 GHz
Minimal series inductance	L_S = 1.5 nH maintains impedance stability and extends usable bandwidth beyond 2.45 GHz

Applications

Cellular Front-End Switching	Wi-Fi 2.4 GHz Band Selection
Use Scenario: Antenna switching between transmit and receive paths in dual-SIM LTE handsets. IC Role / Device Role / Timing Role: Series-connected RF switch controlled by baseband GPIO; toggled during TDD guard intervals. Use Value: 15.4 dB isolation at 900 MHz prevents TX leakage into RX chain; 0.10 dB insertion loss preserves SNR in sensitive receive mode.	Use Scenario: Dynamic band selection between 2.4 GHz Wi-Fi and Bluetooth coexistence in IoT gateways. IC Role / Device Role / Timing Role: Shunt-mode attenuator placed across RF filter input to enable/disable 2.4 GHz path. Use Value: 0.27 pF capacitance at 20 V reverse bias yields high shunt impedance, minimizing insertion loss in active path.
RF Test Instrument Attenuation	ISM Band Transmitter Modulation
Use Scenario: Precision step attenuator stage in handheld RF signal analyzers operating up to 3 GHz. IC Role / Device Role / Timing Role: Cascaded PIN diodes in π-configuration, biased via DAC-controlled current sources. Use Value: Forward resistance tolerance (±0.6 Ω at 100 mA) enables repeatable 0.1 dB step accuracy across temperature.	Use Scenario: On-off keying (OOK) modulation of 2.45 GHz ISM transmitters in industrial remote controls. IC Role / Device Role / Timing Role: Series switch inserted directly in PA output path; gated synchronously with data envelope. Use Value: 310 ns τ_L supports clean 1 Mbps OOK edges without overshoot or droop in radiated spectrum.

Cellular Front-End Switching

Wi-Fi 2.4 GHz Band Selection

Use Scenario: Antenna switching between transmit and receive paths in dual-SIM LTE handsets.

IC Role / Device Role / Timing Role: Series-connected RF switch controlled by baseband GPIO; toggled during TDD guard intervals.

Use Value: 15.4 dB isolation at 900 MHz prevents TX leakage into RX chain; 0.10 dB insertion loss preserves SNR in sensitive receive mode.

Use Scenario: Dynamic band selection between 2.4 GHz Wi-Fi and Bluetooth coexistence in IoT gateways.

IC Role / Device Role / Timing Role: Shunt-mode attenuator placed across RF filter input to enable/disable 2.4 GHz path.

Use Value: 0.27 pF capacitance at 20 V reverse bias yields high shunt impedance, minimizing insertion loss in active path.

RF Test Instrument Attenuation

ISM Band Transmitter Modulation

Use Scenario: Precision step attenuator stage in handheld RF signal analyzers operating up to 3 GHz.

IC Role / Device Role / Timing Role: Cascaded PIN diodes in π-configuration, biased via DAC-controlled current sources.

Use Value: Forward resistance tolerance (±0.6 Ω at 100 mA) enables repeatable 0.1 dB step accuracy across temperature.

Use Scenario: On-off keying (OOK) modulation of 2.45 GHz ISM transmitters in industrial remote controls.

IC Role / Device Role / Timing Role: Series switch inserted directly in PA output path; gated synchronously with data envelope.

Use Value: 310 ns τ_L supports clean 1 Mbps OOK edges without overshoot or droop in radiated spectrum.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF PIN diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BAR63-03W	Identical SOD323 package and pinout; slightly higher C_d (0.35 pF @ 20 V) and r_D (1.7 Ω @ 100 mA)	Lower isolation (14.2 dB @ 900 MHz); acceptable where 1.2 dB margin is tolerable	Drop-in replacement only if system-level isolation budget permits 1.2 dB degradation
ON Semiconductor MMBD633	SOD-323 package but higher r_D (2.2 Ω @ 100 mA), higher C_d (0.45 pF @ 20 V), and no published τ_L or L_S data	Not validated for >1.5 GHz use; insertion loss exceeds 0.25 dB at 2.45 GHz	Only suitable for sub-1 GHz RF switches where bandwidth and loss are less critical

Compared with BAR63-03W and MMBD633, the BAP63-03,115 delivers superior high-frequency performance due to its lower parasitics and verified 3 GHz capability - making it the preferred choice for 4G/LTE and Wi-Fi 6 front-end designs requiring tight RF loss and isolation control.

Availability

BAP63-03,115 is available at Aetrix Electronics and suitable for cellular handset RF front-ends, Wi-Fi 2.4 GHz band selection, and ISM-band transmitter modulation requiring stable component supply and consistent SOD323 assembly yield.

Supply support for BAP63-03,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in high-performance RF, analog, and mixed-signal solutions for automotive, industrial, and mobile communications markets.

The BAP63-03,115 belongs to NXP's legacy RF PIN diode family designed specifically for high-isolation, low-loss switching in portable wireless infrastructure and consumer RF front-ends up to 3 GHz.

FAQ

What is the maximum RF frequency supported by the BAP63-03,115?

The BAP63-03,115 is characterized and specified for operation up to 3 GHz, with measured isolation and insertion loss data provided at 900 MHz, 1800 MHz, and 2450 MHz. Its 1.5 nH series inductance and sub-0.32 pF capacitance sustain usable RF performance through this range, and the datasheet explicitly states "for applications up to 3 GHz."

Does the BAP63-03,115 have a documented pin-to-pin replacement?

No documented pin-to-pin replacement is stated in the official NXP datasheet for BAP63-03,115. While Infineon's BAR63-03W shares the SOD323 package and pinout, it exhibits measurable differences in capacitance and forward resistance - confirming functional equivalence but not guaranteed drop-in compatibility without system validation.

What is the thermal resistance of the BAP63-03,115 and how does it affect power handling?

The BAP63-03,115 has a junction-to-soldering-point thermal resistance (R_th(j-s)) of 120 K/W. At a maximum soldering point temperature of 90 °C, this limits total power dissipation to 500 mW - meaning continuous forward current must remain ≤100 mA at typical VF ≈ 0.95–1.1 V to avoid exceeding thermal limits.

Can the BAP63-03,115 be used in shunt configuration for RF attenuation?

Yes, the BAP63-03,115 is routinely used in shunt configuration. When reverse-biased, its low capacitance (0.27 pF at 20 V) presents high impedance at RF frequencies, enabling effective attenuation; when forward-biased, its low r_D (<1.5 Ω) provides a low-impedance RF short to ground - both modes are validated in the datasheet's S-parameter graphs.

What does the marking code "D2" indicate on the BAP63-03,115 package?

The marking code "D2" on the BAP63-03,115 identifies the device variant within NXP's PIN diode family and confirms compliance with the BAP63-03 specification. The bar adjacent to the marking denotes Pin 1 (cathode), providing unambiguous polarity orientation during automated placement and manual inspection.

BAP63-03,115 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: SC-76, SOD-323

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Diode Type:: PIN - Single

Voltage - Peak Reverse (Max):: 50V

Current - Max:: 100 mA

Capacitance @ Vr, F:: 0.32pF @ 20V, 1MHz

Resistance @ If, F:: 1.5Ohm @ 100mA, 100MHz

Power Dissipation (Max):: 500 mW

Operating Temperature:: -65°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Supplier Device Package:: SOD-323

BAP63-03,115 FAQ

1.How can I place an order for BAP63-03,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAP63-03,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAP63-03,115 reliable?

The price and inventory of BAP63-03,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAP63-03,115 is usually 5 days.

3.What payment methods are accepted for BAP63-03,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAP63-03,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAP63-03,115?

BAP63-03,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAP63-03,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAP63-03,115?

For technical support, including BAP63-03,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAP63-03,115 requirements.

6.How does Aetrix verify that BAP63-03,115 is sourced from the original manufacturer or authorized distributors?

All BAP63-03,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAP63-03,115 meets industry standards.

7.What is the process for return or replacement of BAP63-03,115?

All BAP63-03,115 units undergo pre-shipment inspection (PSI). If there is an issue with BAP63-03,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAP63-03,115 part is unused and in its original packaging.

Return procedure for BAP63-03,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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