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NXP Semiconductors BAP63LX,315
- Part No.:
- BAP63LX,315
- Manufacturer:
- NXP Semiconductors
- Category:
- RF Diodes
- Package:
- SOD-882
- Datasheet:
-
BAP63LX,315.pdf
- Description:
- RF DIODE PIN 50V 135MW SOD2
- Quantity:
- Payment:
- Shipping:
Inventory:5,293
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Product details
Overview
BAP63LX,315 from NXP Semiconductors is a silicon PIN diode optimized for high-frequency RF switching and attenuation in compact SMD layouts. It delivers 0.24 pF diode capacitance at 20 V reverse bias, 0.93 Ω typical forward resistance at 100 mA, and <0.4 nH series inductance - enabling operation up to 3 GHz in 50 Ω stripline circuits.
For engineers reviewing the BAP63LX,315 datasheet, BAP63LX,315 pinout, BAP63LX,315 application, or BAP63LX,315 equivalent, key selection criteria include low insertion loss (0.11 dB at 900 MHz/100 mA), high isolation (15.9 dB at 900 MHz), sub-1 μs charge carrier lifetime, and compatibility with ultra-small DFN1006D-2 (SOD882D) footprint constraints.
Technical Context
The BAP63LX,315 operates as a current-controlled RF series switch: forward bias reduces rD to ≤0.93 Ω, minimizing insertion loss; reverse bias maximizes Cd-dependent isolation while maintaining <10 nA leakage at 20 V. Its intrinsic-layer design enables predictable linear capacitance vs. voltage behavior (0.24–0.34 pF across 0–20 V).
Thermal performance is defined by Rth(j-sp) = 78 K/W to solder point, supporting continuous 100 mA forward current within 135 mW total power dissipation at Tsp = 90 °C. The device exhibits τL = 0.32 μs carrier lifetime, balancing switching speed against charge storage effects in pulsed RF paths.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Diode capacitance (Cd) | 0.24 pF at VR = 20 V - enables high isolation in RF shunt/series switch topologies up to 2.45 GHz |
| Forward resistance (rD) | 0.93 Ω typ. at IF = 100 mA - ensures <0.11 dB insertion loss in 50 Ω systems |
| Series inductance (LS) | 0.4 nH - minimizes parasitic reactance impact on impedance matching above 1 GHz |
| Charge carrier lifetime (τL) | 0.32 μs - supports fast RF switching with controlled turn-off tail in time-division systems |
| Isolation (ISL) | 15.9 dB at 900 MHz - provides effective signal blocking in antenna diversity and TR switch applications |
| Reverse voltage (VR) | 50 V max - supports biasing headroom in multi-stage RF attenuator designs |
| Forward current (IF) | 100 mA max - defines maximum continuous RF power handling capability in series-switch configuration |
Pinout & Package
Package: DFN1006D-2 (SOD882D), leadless ultra-small plastic SMD package; body dimensions 1.0 × 0.6 × 0.4 mm; cathode identified by marking bar.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | cathode | RF signal path return node in series-switch configuration; connects to DC bias ground or RF choke |
| 2 | anode | RF input/output node in series-switch configuration; requires DC blocking capacitor for AC coupling |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low diode capacitance | 0.24 pF at 20 V reverse bias - preserves high-frequency impedance integrity in 50 Ω RF paths |
| Low forward resistance | 0.93 Ω at 100 mA - minimizes resistive loss and self-heating during high-power RF conduction |
| Very low series inductance | 0.4 nH - eliminates resonance issues and maintains broadband match beyond 2 GHz |
| High-speed switching capability | 0.32 μs carrier lifetime - enables clean transitions in TDMA, LTE TDD, and Wi-Fi time-slot switching |
| Compact DFN1006D-2 footprint | 1.0 × 0.6 mm body - allows dense placement in multi-pole RF front-end modules and antenna tuners |
Applications
| Cellular Front-End Switching | Wi-Fi 2.4 GHz Band Switching |
|---|---|
Use Scenario: Antenna switching between transmit and receive paths in LTE handsets with dual-SIM/dual-active capability. IC Role / Device Role / Timing Role: Series-connected RF switch controlling signal routing between PA output and antenna port. Use Value: 0.11 dB insertion loss at 900 MHz and 15.9 dB isolation enable simultaneous Rx sensitivity and Tx linearity without duplexer complexity. |
Use Scenario: Dynamic antenna selection in MIMO-enabled Wi-Fi 6 client devices operating at 2.45 GHz. IC Role / Device Role / Timing Role: Low-inductance series switch toggling RF path between two diversity antennas. Use Value: 0.4 nH LS and 0.24 pF Cd maintain >10 dB isolation at 2.45 GHz while preserving group delay flatness across channel bandwidth. |
| ISM Band Attenuator Control | Bluetooth LE Transceiver Switching |
Use Scenario: Programmable step attenuator in 2.4 GHz ISM-band test equipment requiring 0.5 dB resolution. IC Role / Device Role / Timing Role: Shunt-connected PIN diode element in π-type attenuator network. Use Value: Stable 0.29 pF capacitance at 1 V bias enables repeatable attenuation steps with <±0.1 dB variation across temperature. |
Use Scenario: TR switch in Bluetooth LE earbud transceivers managing shared antenna between 2.4 GHz Tx/Rx chains. IC Role / Device Role / Timing Role: Fast-switching series-shunt topology element synchronized to BLE packet timing. Use Value: 0.32 μs τL ensures full isolation before Rx startup, preventing PA leakage from desensitizing LNA during slot transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF PIN diode switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMP1320-079LF | Higher Cd (0.42 pF @ 20 V); higher rD (1.2 Ω @ 100 mA); same DFN1006 package | Lower isolation at 2.45 GHz (12.1 dB); higher insertion loss (0.18 dB) | Acceptable where 3G/4G band coverage dominates over Wi-Fi 2.4 GHz performance |
| BAP64-03,115 | Larger SOT23-3 package; higher thermal resistance (Rth(j-sp) = 120 K/W); identical electrical specs | Requires PCB area increase (~3× footprint); less suitable for space-constrained front-end modules | Preferred when manual rework or thermal derating margin is prioritized over miniaturization |
Compared with SMP1320-079LF and BAP64-03,115, the BAP63LX,315 offers superior high-frequency insertion loss and isolation due to its lower Cd and LS, while its DFN1006D-2 package enables denser RF layout - critical for modern multi-band mobile and IoT front-ends.
Availability
BAP63LX,315 is available at Aetrix Electronics and suitable for cellular front-end modules, Wi-Fi 6 antenna switching, and ISM-band test instrumentation requiring stable component supply and consistent RF performance across production volumes.
Supply support for BAP63LX,315 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer applications.
The BAP63LX,315 belongs to NXP's high-frequency discrete PIN diode product line, engineered specifically for RF signal routing, attenuation, and switching in compact wireless infrastructure and portable communication devices.
FAQ
What is the maximum RF frequency supported by the BAP63LX,315?
The BAP63LX,315 is characterized for operation up to 3 GHz, with measured isolation of 8.3 dB and insertion loss of 0.15 dB at 2450 MHz under 100 mA forward bias. Its 0.24 pF capacitance and 0.4 nH series inductance sustain usable RF performance through the entire 2.4 GHz ISM and UMTS/LTE bands. Performance beyond 3 GHz is not specified in the official NXP datasheet for BAP63LX,315.
How is the cathode identified on the BAP63LX,315 package?
The cathode of the BAP63LX,315 is marked by a visible bar on the top surface of the DFN1006D-2 (SOD882D) package, aligned with pin 1 per the official NXP pinning diagram. This marking bar is the sole polarity indicator - no alphanumeric code or dot denotes cathode orientation. Correct identification is essential for proper DC biasing in series-switch configurations.
What is the thermal resistance from junction to solder point for the BAP63LX,315?
The BAP63LX,315 has a specified thermal resistance Rth(j-sp) of 78 K/W from junction to solder point, measured under standard conditions. This value enables reliable operation at 100 mA forward current with a maximum power dissipation of 135 mW when the solder point temperature is held at 90 °C. Layouts must ensure adequate copper pour under the exposed pad to realize this thermal performance.
Can the BAP63LX,315 be used in shunt-switch configurations?
Yes, the BAP63LX,315 supports both series and shunt RF switch topologies. In shunt configuration, the anode connects to RF path and cathode to RF ground via bias choke; its 0.24 pF capacitance at 20 V reverse bias provides effective RF shorting. The device's low series inductance (0.4 nH) prevents resonance degradation in shunt layouts up to 2.45 GHz.
What is the forward voltage drop of the BAP63LX,315 at 50 mA?
The BAP63LX,315 exhibits a typical forward voltage drop (VF) of 0.95 V at IF = 50 mA and Tamb = 25 °C, with a maximum of 1.1 V. This VF value determines the minimum bias voltage required to achieve low rD conduction - for example, a 1.8 V supply with appropriate current limiting ensures robust turn-on while staying within the 100 mA absolute maximum rating.
BAP63LX,315 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SOD-882
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Diode Type:
- PIN - Single
- Voltage - Peak Reverse (Max):
- 50V
- Current - Max:
- 100 mA
- Capacitance @ Vr, F:
- 0.3pF @ 20V, 1MHz
- Resistance @ If, F:
- 1.5Ohm @ 100mA, 100MHz
- Power Dissipation (Max):
- 135 mW
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Supplier Device Package:
- SOD2
BAP63LX,315 FAQ
1.How can I place an order for BAP63LX,315 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAP63LX,315 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAP63LX,315 reliable?
The price and inventory of BAP63LX,315 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAP63LX,315 is usually 5 days.
3.What payment methods are accepted for BAP63LX,315?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAP63LX,315 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAP63LX,315?
BAP63LX,315 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAP63LX,315 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAP63LX,315?
For technical support, including BAP63LX,315 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAP63LX,315 requirements.
6.How does Aetrix verify that BAP63LX,315 is sourced from the original manufacturer or authorized distributors?
All BAP63LX,315 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAP63LX,315 meets industry standards.
7.What is the process for return or replacement of BAP63LX,315?
All BAP63LX,315 units undergo pre-shipment inspection (PSI). If there is an issue with BAP63LX,315, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAP63LX,315 part is unused and in its original packaging.
Return procedure for BAP63LX,315:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAP63LX,315 Tags
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