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NXP Semiconductors BAP64-02,115

Part No.:
BAP64-02,115
Manufacturer:
NXP Semiconductors
Category:
RF Diodes
Package:
SC-79, SOD-523
Datasheet:
AetrixBAP64-02,115.pdf
Description:
RF DIODE PIN 175V 715MW SOD523
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:10,594

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Product details

Overview

BAP64-02,115 from NXP Semiconductors is a silicon PIN diode in SOD523 package, designed as a voltage-controlled RF resistor for high-frequency switching and attenuation up to 6 GHz. It delivers 0.23 pF diode capacitance at 20 V reverse bias, 2.0 Ω typical forward resistance at 10 mA, and supports 175 V reverse voltage and 100 mA forward current - enabling use in 5G front-end modules and automotive radar switches.

For engineers reviewing the BAP64-02,115 datasheet, BAP64-02,115 pinout, BAP64-02,115 application, or BAP64-02,115 equivalent, key selection criteria include RF isolation performance (−25 dB at 3 GHz), low series inductance (0.6 nH), AEC-Q101 qualification, and SOD523 footprint compatibility with space-constrained RF layouts.

Technical Context

The BAP64-02,115 operates as a current-controlled variable RF resistor, leveraging its intrinsic region to achieve linear resistance control over 0.5–100 mA forward bias. Its low 0.6 nH series inductance and sub-0.35 pF capacitance enable stable impedance behavior through 6 GHz.

Designed for zero-biased or forward-biased operation in series-shunt RF switch topologies, it achieves −25 dB isolation at 3 GHz and <0.5 dB insertion loss at 100 mA bias - validated under 50 Ω stripline conditions per Figures 3 and 4 of the datasheet.

Key Specifications

ParameterValue and Actual Design Meaning
Reverse Voltage175 V - supports high-voltage RF switch hold-off in cellular base station T/R modules
Diode Capacitance0.23 pF (typ) at VR = 20 V - enables minimal signal coupling in broadband 5G mmWave attenuators
Forward Resistance2.0 Ω (typ) at IF = 10 mA - provides precise RF attenuation step resolution in digitally controlled VGA stages
Series Inductance0.6 nH - preserves impedance integrity above 3 GHz without parasitic resonance
Isolation−25 dB at 3 GHz - ensures >99% signal blocking in antenna diversity switch paths
Charge Carrier Lifetime1.55 μs - balances switching speed and distortion in LTE-A carrier aggregation front ends

Pinout & Package

SOD523 ultra-small plastic surface-mount package (1.25 × 0.85 × 0.58 mm); marking bar denotes cathode.

Pin/TerminalCircuit RoleDesign Meaning
1CathodeRF return path in series-switch configuration; connects to ground or RF common in shunt-switch topology
2AnodeCurrent injection node for forward bias control; carries RF signal in series placement or DC control in shunt placement

Key Features

FeatureDesign Value
Low Diode Capacitance0.23 pF at 20 V reverse bias - minimizes capacitive feedthrough in high-isolation RF switches
Very Low Series Inductance0.6 nH - eliminates self-resonance below 6 GHz, ensuring flat frequency response
AEC-Q101 QualifiedValidated for automotive radar and infotainment RF modules requiring extended temperature and reliability compliance
High-Voltage Handling175 V reverse rating - supports LTE/5G power amplifier output stage protection and T/R switching

Applications

Cellular Base Station Front EndAutomotive Radar Switching

Use Scenario: RF path selection between transmit and receive chains in massive MIMO active antennas.

IC Role / Device Role / Timing Role: Series-connected PIN diode acting as a current-controlled RF switch with <0.5 dB insertion loss at 3.5 GHz.

Use Value: Enables fast TDD switching with 1.55 μs carrier lifetime while maintaining −25 dB isolation across 3.3–3.8 GHz band.

Use Scenario: Antenna diversity switching in 77 GHz ADAS radar transceivers.

IC Role / Device Role / Timing Role: Shunt-mounted RF switch controlling signal routing to dual-receive channels.

Use Value: AEC-Q101 qualification ensures operational stability at −40 °C to +125 °C junction temperature during vehicle cold starts and highway operation.

5G Small Cell AttenuatorWi-Fi 6E Band Selection

Use Scenario: Digitally controlled variable attenuator in 3.5 GHz and 26 GHz small cell radio units.

IC Role / Device Role / Timing Role: Voltage-biased PIN diode providing 10–30 dB attenuation range via forward current tuning.

Use Value: 0.23 pF capacitance and 2.0 Ω forward resistance enable monotonic, predictable attenuation steps without harmonic generation.

Use Scenario: Frequency band switching between 5.2 GHz and 6.0 GHz Wi-Fi 6E client radios.

IC Role / Device Role / Timing Role: Single-pole double-throw (SPDT) switch element selecting between two filter banks.

Use Value: SOD523 footprint allows dual-switch integration in <2 mm² PCB area, critical for smartphone RF module miniaturization.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF switch applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MACOM MADP-000907-14020THigher 0.35 pF capacitance; 0.8 nH inductance; 200 V VR ratingOptimized for higher-power macro base stations; larger SOT-23 packageSelect when >175 V reverse hold-off or higher power handling is required; not suitable for space-constrained modules
Skyworks SMS7630-061Lower 0.15 pF capacitance; 1.2 nH inductance; 75 V VR rating; no AEC-Q101Targeted at consumer Wi-Fi and IoT; lacks automotive qualificationChoose for cost-sensitive 2.4/5 GHz applications where AEC-Q101 is unnecessary and size is secondary

Compared with MADP-000907-14020T and SMS7630-061, the BAP64-02,115 uniquely balances ultra-low capacitance (0.23 pF), AEC-Q101 compliance, and SOD523 footprint - making it optimal for automotive radar and compact 5G infrastructure where thermal reliability and board space are co-constrained.

Availability

BAP64-02,115 is available at Aetrix Electronics and suitable for cellular infrastructure, automotive radar systems, and Wi-Fi 6E band selection circuits requiring stable component supply and long-term production continuity.

Supply support for BAP64-02,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and IoT applications, with headquarters in Eindhoven, Netherlands.

The BAP64-02,115 belongs to NXP's high-frequency discrete PIN diode product line, engineered specifically for RF switching and attenuation in 5G, radar, and satellite communication systems operating up to 6 GHz.

FAQ

What is the maximum operating frequency supported by the BAP64-02,115?

The BAP64-02,115 is characterized for operation up to 6 GHz, with verified isolation (−25 dB) and insertion loss (<0.5 dB) performance at 3 GHz under 50 Ω stripline conditions. Its 0.6 nH series inductance and sub-0.35 pF capacitance ensure stable RF behavior across this range, as confirmed in Figures 3 and 4 of the official NXP datasheet Rev. 11.

Is the BAP64-02,115 qualified for automotive applications?

Yes, the BAP64-02,115 is AEC-Q101 qualified, as explicitly stated in Section 1.2 of the NXP datasheet Rev. 11. This qualification validates its reliability for use in automotive radar, infotainment, and telematics RF modules operating across −40 °C to +125 °C junction temperature ranges.

What does the marking code 'S' indicate on the BAP64-02,115 package?

The marking code 'S' on the BAP64-02,115 corresponds to the type number per Table 3 of the NXP datasheet. The cathode is identified by a marking bar adjacent to pin 1, consistent with the SOD523 package outline in Figure 5 - critical for correct orientation during automated placement in RF-sensitive layouts.

How does forward current affect the RF resistance of the BAP64-02,115?

Forward current directly controls RF resistance: at 0.5 mA, rD is ~40 Ω; at 10 mA, it drops to ~20 Ω; at 100 mA, it reaches 0.7–1.35 Ω (typ/max). This tunable resistance enables precise attenuation in voltage-controlled RF gain stages, as shown in Figure 2 of the BAP64-02,115 datasheet.

What is the thermal resistance from junction to solder point for the BAP64-02,115?

The BAP64-02,115 has a typical thermal resistance Rth(j-sp) of 85 K/W, as specified in Table 5 of the NXP datasheet. This value reflects heat dissipation capability from the silicon junction to the PCB solder point under standard mounting conditions - essential for thermal design in high-duty-cycle RF switch applications.

BAP64-02,115 Specifications

Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Series:
-
Package/Case:
SC-79, SOD-523
Packaging:
Tape & Reel (TR)
Product Status:
Active
Diode Type:
PIN - Single
Voltage - Peak Reverse (Max):
175V
Current - Max:
100 mA
Capacitance @ Vr, F:
0.35pF @ 20V, 1MHz
Resistance @ If, F:
1.35Ohm @ 100mA, 100MHz
Power Dissipation (Max):
715 mW
Operating Temperature:
-65°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Supplier Device Package:
SOD-523

BAP64-02,115 FAQ

1.How can I place an order for BAP64-02,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAP64-02,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAP64-02,115 reliable?

The price and inventory of BAP64-02,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAP64-02,115 is usually 5 days.

3.What payment methods are accepted for BAP64-02,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAP64-02,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAP64-02,115?

BAP64-02,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAP64-02,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAP64-02,115?

For technical support, including BAP64-02,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAP64-02,115 requirements.

6.How does Aetrix verify that BAP64-02,115 is sourced from the original manufacturer or authorized distributors?

All BAP64-02,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAP64-02,115 meets industry standards.

7.What is the process for return or replacement of BAP64-02,115?

All BAP64-02,115 units undergo pre-shipment inspection (PSI). If there is an issue with BAP64-02,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAP64-02,115 part is unused and in its original packaging.

Return procedure for BAP64-02,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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