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Home > Products > Discrete Semiconductor Products > Diodes > RF Diodes

NXP Semiconductors BAP64-04,215

Name: BAP64-04,215
Brand: NXP Semiconductors
SKU: BAP64-04,215
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BAP64-04,215

Manufacturer:: NXP Semiconductors

Category:: RF Diodes

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BAP64-04,215.pdf

Description:: RF DIODE PIN 175V 250MW TO236AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BAP64-04,215 from NXP Semiconductors is a silicon PIN diode in SOT23 package, configured as two series-connected PIN diodes for RF switching and attenuation. It delivers 0.23 pF typical diode capacitance at 20 V reverse bias, 2.0 Ω typical forward resistance at 10 mA, and supports operation up to 3 GHz in 50 Ω stripline circuits - used in cellular front-end modules for antenna tuning and TR switch control.

For engineers reviewing the BAP64-04,215 datasheet, BAP64-04,215 pinout, BAP64-04,215 application, or BAP64-04,215 equivalent, key selection criteria include reverse voltage rating (175 V), AEC-Q101 qualification, low series inductance (1.4 nH), isolation performance above −20 dB at 2 GHz, and thermal resistance (220 K/W) for high-reliability RF power handling.

Technical Context

The BAP64-04,215 integrates two monolithic PIN diodes in series within a single SOT23 package, enabling bidirectional RF signal control with matched characteristics. Its intrinsic layer design yields low capacitance and controlled carrier lifetime (1.55 μs), supporting fast switching in attenuator and switch topologies.

It operates as a voltage-controlled RF resistor: forward bias reduces r_D to 0.7 Ω (at 100 mA), while reverse bias maintains Cd below 0.35 pF - critical for broadband impedance stability in 50 Ω systems up to 3 GHz.

Key Specifications

Parameter	Value and Actual Design Meaning
Reverse Voltage (V_R)	175 V - enables high-isolation RF switching in cellular and automotive radar front-ends without breakdown risk
Diode Capacitance (C_d)	0.23 pF typ @ 20 V - ensures minimal RF signal coupling and insertion loss in 2–3 GHz bands
Forward Resistance (r_D)	2.0 Ω typ @ 10 mA - provides low-loss conduction path for RF current in active attenuator stages
Series Inductance (L_S)	1.4 nH - minimizes parasitic reactance, preserving broadband matching up to 3 GHz
Charge Carrier Lifetime (τ_L)	1.55 μs - balances switching speed and RF linearity for TDMA and LTE burst-mode applications
Thermal Resistance (R_th(j-sp))	220 K/W - supports continuous 100 mA forward current with junction temperature control on standard PCBs
AEC-Q101 Qualified	Yes - validated for automotive under-hood RF modules requiring extended temperature and reliability compliance

Pinout & Package

SOT23 plastic surface-mounted package (3-lead); dimensions: 2.9 × 1.3 × 1.0 mm (L × W × H), with gull-wing leads and standardized solder point thermal path.

Pin/Terminal	Circuit Role	Design Meaning
1	Anode of Diode 1	Input terminal for forward-biased RF current flow into first PIN junction
2	Cathode of Diode 2	Output terminal for series-connected RF path; common reference for bias network return
3	Common Connection	Internal node linking cathode of Diode 1 and anode of Diode 2 - forms series string midpoint

Key Features

Feature	Design Value
RF Resistor Behavior	Controllable r_D from 0.7 Ω (100 mA) to >10 kΩ (reverse bias) - enables precise analog attenuation in 50 Ω systems
Low Capacitance Variation	Cd shifts only from 0.52 pF (0 V) to 0.23 pF (20 V) - maintains stable impedance across bias range
High-Frequency Isolation	−25 dB typical isolation at 2 GHz (zero bias) - suppresses leakage in transmit/receive switching
AEC-Q101 Qualification	Validated for automotive temperature cycling (−40 °C to +125 °C), humidity, and mechanical shock - suitable for telematics antennas
Low Series Inductance	1.4 nH - avoids resonance near 3 GHz, ensuring flat frequency response in wideband designs

Applications

Cellular Front-End Switching	Automotive Radar Attenuation
Use Scenario: Antenna diversity switching in LTE/5G handsets using T/R control signals. IC Role / Device Role / Timing Role: PIN diode pair acts as series-shunt RF switch controlling signal path between PA and antenna. Use Value: 0.23 pF capacitance and 2.0 Ω r_D ensure <−0.3 dB insertion loss and >20 dB isolation at 2.6 GHz - meeting 3GPP TRP requirements.	Use Scenario: Adjustable gain control in 77 GHz radar receiver LNA protection stage. IC Role / Device Role / Timing Role: Voltage-tuned RF resistor limits input power during high-SWR events without clipping. Use Value: 175 V reverse rating and AEC-Q101 qualification enable robust operation in automotive radar ECU environments.
Wi-Fi 6E Band Selection	Industrial IoT Transceiver Protection
Use Scenario: Frequency band switching between 2.4 GHz, 5 GHz, and 6 GHz channels in dual-band access points. IC Role / Device Role / Timing Role: Dual-diode structure provides symmetrical RF path control for balanced filter bank routing. Use Value: 1.4 nH series inductance and <0.35 pF max C_d preserve VSWR <1.3 across all three bands - minimizing re-radiation loss.	Use Scenario: Overvoltage clamping and RF transient suppression in LoRaWAN gateway transceivers. IC Role / Device Role / Timing Role: Reverse-biased PIN diode absorbs ESD pulses while maintaining low capacitance during normal operation. Use Value: 10 μA max reverse leakage at 60 V and 220 K/W thermal resistance support long-term reliability in unattended outdoor deployments.

Cellular Front-End Switching

Automotive Radar Attenuation

Use Scenario: Antenna diversity switching in LTE/5G handsets using T/R control signals.

IC Role / Device Role / Timing Role: PIN diode pair acts as series-shunt RF switch controlling signal path between PA and antenna.

Use Value: 0.23 pF capacitance and 2.0 Ω r_D ensure <−0.3 dB insertion loss and >20 dB isolation at 2.6 GHz - meeting 3GPP TRP requirements.

Use Scenario: Adjustable gain control in 77 GHz radar receiver LNA protection stage.

IC Role / Device Role / Timing Role: Voltage-tuned RF resistor limits input power during high-SWR events without clipping.

Use Value: 175 V reverse rating and AEC-Q101 qualification enable robust operation in automotive radar ECU environments.

Wi-Fi 6E Band Selection

Industrial IoT Transceiver Protection

Use Scenario: Frequency band switching between 2.4 GHz, 5 GHz, and 6 GHz channels in dual-band access points.

IC Role / Device Role / Timing Role: Dual-diode structure provides symmetrical RF path control for balanced filter bank routing.

Use Value: 1.4 nH series inductance and <0.35 pF max C_d preserve VSWR <1.3 across all three bands - minimizing re-radiation loss.

Use Scenario: Overvoltage clamping and RF transient suppression in LoRaWAN gateway transceivers.

IC Role / Device Role / Timing Role: Reverse-biased PIN diode absorbs ESD pulses while maintaining low capacitance during normal operation.

Use Value: 10 μA max reverse leakage at 60 V and 220 K/W thermal resistance support long-term reliability in unattended outdoor deployments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF PIN diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MACOM MADP-000907-14020T	Single-diode SOT23; lower C_d (0.15 pF @ 20 V) but no AEC-Q101 qualification	Preferred for non-automotive 5G infrastructure where ultra-low capacitance dominates reliability needs	Select when sub-0.2 pF capacitance is mandatory and automotive qualification is not required
Infineon BAR63-03W	Single-diode SOT323; higher r_D (4.5 Ω @ 10 mA), smaller package (1.7 × 1.25 mm), no AEC-Q101	Suitable for space-constrained consumer Wi-Fi modules with relaxed RF loss budgets	Select when board area is constrained and 0.5 dB extra insertion loss is acceptable

Compared with MADP-000907-14020T and BAR63-03W, the BAP64-04,215 uniquely combines dual-diode topology, AEC-Q101 qualification, and 175 V reverse rating - making it the only option qualified for automotive radar front-end switching where series configuration and high-voltage isolation are mandatory.

Availability

BAP64-04,215 is available at Aetrix Electronics and suitable for cellular front-end switching, automotive radar attenuation, and Wi-Fi 6E band selection requiring stable component supply, traceable sourcing, and lifecycle continuity.

Supply support for BAP64-04,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and mobile applications.

The BAP64-04,215 belongs to NXP's high-frequency discrete diode product line, engineered specifically for RF signal control in automotive radar, cellular infrastructure, and wireless communication systems demanding AEC-Q101 reliability and broadband performance.

FAQ

What is the maximum operating frequency of the BAP64-04,215?

The BAP64-04,215 is characterized for operation up to 3 GHz, with typical isolation exceeding −20 dB and insertion loss below −0.5 dB across this band when used in 50 Ω stripline configurations. Figure 3 and Figure 4 in the official NXP datasheet confirm performance through 3 GHz, validating its use in LTE, Wi-Fi 5/6, and automotive 77 GHz radar front-end support circuits.

Is the BAP64-04,215 pin-compatible with other SOT23 PIN diodes?

No - the BAP64-04,215 has a unique three-terminal series-diode configuration (anode–common–cathode), differing from standard single-PIN SOT23 diodes like BAR63 or SMP13xx. Pin 3 is the internal common node, not a substrate or NC terminal. Substitution requires schematic and layout revision; the BAP64-04,215 must be placed as a dedicated series-switch element.

Does the BAP64-04,215 require external bias circuitry?

Yes - the BAP64-04,215 requires DC bias control to set its RF resistance state. Forward bias (via series resistor or active driver) lowers r_D; reverse bias maximizes isolation. The datasheet specifies IF = 100 mA for minimum r_D, and VR = 175 V absolute max - so bias networks must enforce current limiting and voltage clamping per application requirements.

What does "AEC-Q101 qualified" mean for the BAP64-04,215?

AEC-Q101 qualification confirms the BAP64-04,215 has passed stress tests including temperature cycling, high-temperature reverse bias, and mechanical shock - specifically for discrete semiconductors in automotive applications. This validates its use in telematics, ADAS radar modules, and infotainment RF sections where ambient temperatures reach +125 °C and reliability exceeds 15-year field life.

How is thermal performance managed in the BAP64-04,215?

The BAP64-04,215 uses the SOT23 solder point as its primary thermal path, with R_th(j-sp) = 220 K/W. To maintain T_j ≤ 150 °C, PCB layout must provide ≥20 mm² of 1-oz copper connected to Pin 2 (cathode) and Pin 3 (common) - verified in NXP's thermal application note AN11120. Derating is required above 90 °C ambient.

BAP64-04,215 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Diode Type:: PIN - 1 Pair Series Connection

Voltage - Peak Reverse (Max):: 175V

Current - Max:: 100 mA

Capacitance @ Vr, F:: 0.35pF @ 20V, 1MHz

Resistance @ If, F:: 1.35Ohm @ 100mA, 100MHz

Power Dissipation (Max):: 250 mW

Operating Temperature:: -65°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Supplier Device Package:: SOT-23 (TO-236AB)

BAP64-04,215 FAQ

1.How can I place an order for BAP64-04,215 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAP64-04,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAP64-04,215 reliable?

The price and inventory of BAP64-04,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAP64-04,215 is usually 5 days.

3.What payment methods are accepted for BAP64-04,215?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAP64-04,215 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAP64-04,215?

BAP64-04,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAP64-04,215 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAP64-04,215?

For technical support, including BAP64-04,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAP64-04,215 requirements.

6.How does Aetrix verify that BAP64-04,215 is sourced from the original manufacturer or authorized distributors?

All BAP64-04,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAP64-04,215 meets industry standards.

7.What is the process for return or replacement of BAP64-04,215?

All BAP64-04,215 units undergo pre-shipment inspection (PSI). If there is an issue with BAP64-04,215, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAP64-04,215 part is unused and in its original packaging.

Return procedure for BAP64-04,215:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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