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Home > Products > Discrete Semiconductor Products > Diodes > RF Diodes

NXP Semiconductors BAP64-04W,115

Name: BAP64-04W,115
Brand: NXP Semiconductors
SKU: BAP64-04W,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BAP64-04W,115

Manufacturer:: NXP Semiconductors

Category:: RF Diodes

Package:: SC-70, SOT-323

Datasheet:: BAP64-04W,115.pdf

Description:: RF DIODE PIN 100V 240MW SOT323

Quantity:: RFQ Add To RFQ list

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Inventory:21,015

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Product details

Overview

BAP64-04W from NXP Semiconductors is a silicon PIN diode in series configuration housed in an SOT323 package, designed for RF signal control in attenuators and switches. It delivers 0.23–0.35 pF reverse-biased capacitance at 20 V, <1.35 Ω forward resistance at 100 mA, and supports operation up to 3 GHz with AEC-Q101 qualification for automotive-grade reliability.

For engineers reviewing the BAP64-04W datasheet, BAP64-04W pinout, BAP64-04W application, or BAP64-04W equivalent, key selection criteria include its low series inductance (1.6 nH), high reverse voltage rating (100 V), RF isolation performance above –20 dB at 2 GHz, and suitability for current-controlled RF resistor functions in compact 50 Ω systems.

Technical Context

The BAP64-04W integrates two planar PIN diodes in series within a single SOT323 package, enabling precise RF attenuation and switching via forward current biasing. Its structure minimizes parasitic inductance and capacitance while maintaining high-voltage blocking capability.

It operates as a voltage-variable RF resistor: forward current adjusts r_D (2–40 Ω range), directly controlling insertion loss (–1 to –5 dB typical at 1–2 GHz) and isolation (>–20 dB off-state). Charge carrier lifetime of 1.55 μs supports fast RF switching transitions.

Key Specifications

Parameter	Value and Actual Design Meaning
Diode Configuration	Two PIN diodes in series - enables higher breakdown voltage and improved linearity vs. single-diode designs
Reverse Voltage (V_R)	100 V continuous - supports robust RF blocking in high-dynamic-range transceivers
Capacitance (C_d)	0.23–0.35 pF at V_R = 20 V - ensures minimal signal loading in 50 Ω RF paths up to 3 GHz
Forward Resistance (r_D)	0.7–1.35 Ω at I_F = 100 mA - provides low-loss conduction state for RF power handling
Series Inductance (L_S)	1.6 nH at I_F = 10 mA, f = 100 MHz - preserves impedance integrity in UHF/microwave layouts
Charge Carrier Lifetime (τ_L)	1.55 μs - balances switching speed and intermodulation distortion in broadband applications

Pinout & Package

SOT323 plastic surface-mounted package (3-lead, SC-70 compatible); dimensions: 2.2 × 1.35 × 0.95 mm (L × W × H), thermal resistance R_th(j-sp) = 250 K/W.

Pin/Terminal	Circuit Role	Design Meaning
1	Anode of first diode	Input node for series-connected RF path; connects to external bias network
2	Cathode of second diode	Output node for series-connected RF path; completes current loop with Pin 3
3	Common connection	Shared cathode/anode junction point - enables dual-diode series topology in 3-pin footprint

Key Features

Feature	Design Value
RF resistor behavior	Current-tunable r_D (0.7–40 Ω) enables precise analog attenuation without digital control circuitry
Low capacitance variation	0.23–0.52 pF over 0–20 V reverse bias - maintains stable impedance matching across wideband signals
AEC-Q101 qualification	Validated for automotive under-hood environments including temperature cycling and humidity exposure
High-frequency operation	Verified insertion loss and isolation performance up to 3 GHz - suitable for LTE, Wi-Fi 5/6, and automotive radar front-ends

Applications

Cellular Front-End Modules	Automotive Radar Transceivers
Use Scenario: RF power control in LTE/WCDMA transmit/receive switching paths with 50 Ω system impedance. IC Role / Device Role / Timing Role: Current-controlled RF switch element managing antenna duplexing and band selection. Use Value: Enables >30 dB isolation at 2.1 GHz with <0.5 dB insertion loss in on-state using only DC bias current.	Use Scenario: Transmit path attenuation and receive path protection in 77 GHz radar modules with tight PCB space constraints. IC Role / Device Role / Timing Role: High-linearity RF resistor for gain control and ESD-safe signal routing in MMIC interfaces. Use Value: Delivers 1.55 μs switching response and AEC-Q101 reliability for safety-critical ADAS subsystems.
Wi-Fi 6 Access Point RF Switches	Test Equipment Signal Routing
Use Scenario: MIMO antenna switching in dual-band 2.4/5 GHz access points requiring low intermodulation distortion. IC Role / Device Role / Timing Role: Low-capacitance, low-inductance series switch for high-isolation antenna port selection. Use Value: Achieves –45 dBc second-order intercept (IP2) at 1800 MHz with 10 mA bias - reduces adjacent-channel interference.	Use Scenario: Programmable RF path attenuation in automated test equipment with 50 Ω reference impedance. IC Role / Device Role / Timing Role: Precision analog attenuator core controlled by DAC-driven bias current. Use Value: Provides monotonic 20 dB attenuation range with <0.1 dB step resolution via 1–100 mA forward current tuning.

Cellular Front-End Modules

Automotive Radar Transceivers

Use Scenario: RF power control in LTE/WCDMA transmit/receive switching paths with 50 Ω system impedance.

IC Role / Device Role / Timing Role: Current-controlled RF switch element managing antenna duplexing and band selection.

Use Value: Enables >30 dB isolation at 2.1 GHz with <0.5 dB insertion loss in on-state using only DC bias current.

Use Scenario: Transmit path attenuation and receive path protection in 77 GHz radar modules with tight PCB space constraints.

IC Role / Device Role / Timing Role: High-linearity RF resistor for gain control and ESD-safe signal routing in MMIC interfaces.

Use Value: Delivers 1.55 μs switching response and AEC-Q101 reliability for safety-critical ADAS subsystems.

Wi-Fi 6 Access Point RF Switches

Test Equipment Signal Routing

Use Scenario: MIMO antenna switching in dual-band 2.4/5 GHz access points requiring low intermodulation distortion.

IC Role / Device Role / Timing Role: Low-capacitance, low-inductance series switch for high-isolation antenna port selection.

Use Value: Achieves –45 dBc second-order intercept (IP2) at 1800 MHz with 10 mA bias - reduces adjacent-channel interference.

Use Scenario: Programmable RF path attenuation in automated test equipment with 50 Ω reference impedance.

IC Role / Device Role / Timing Role: Precision analog attenuator core controlled by DAC-driven bias current.

Use Value: Provides monotonic 20 dB attenuation range with <0.1 dB step resolution via 1–100 mA forward current tuning.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF PIN diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BAR63-03W	Single PIN diode in SOT323; lower max reverse voltage (50 V); C_d = 0.35 pF at 20 V	Not rated for automotive use; limited to consumer-grade 2.4 GHz ISM bands	Select when cost sensitivity outweighs voltage headroom and automotive compliance requirements
ON Semiconductor MMBD640L	Single PIN diode in SOT23; higher r_D (2.5 Ω min at 100 mA); C_d = 0.45 pF at 20 V	Higher insertion loss above 1 GHz; not AEC-Q101 qualified	Choose for legacy SOT23 board compatibility where 3 GHz performance is non-critical

Compared with BAR63-03W and MMBD640L, the BAP64-04W offers superior voltage handling, lower capacitance, and automotive qualification - making it the preferred choice for high-reliability, wideband RF switching where series-diode architecture improves linearity and power handling.

Availability

BAP64-04W is available at Aetrix Electronics and suitable for cellular front-end modules, automotive radar transceivers, and Wi-Fi 6 access point RF switches requiring stable component supply and long-term lifecycle support.

Supply support for BAP64-04W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company specializing in secure connectivity solutions for automotive, industrial, and IoT applications, with leadership in RF and mixed-signal technologies.

The BAP64-04W belongs to NXP's high-frequency PIN diode product line, engineered specifically for current-controlled RF attenuation and switching in compact, high-reliability wireless infrastructure and automotive radar systems.

FAQ

What is the maximum operating frequency supported by the BAP64-04W?

The BAP64-04W is characterized for operation up to 3 GHz, with verified insertion loss and isolation performance shown in Figures 3 and 4 of the datasheet. At 2 GHz, typical off-state isolation exceeds –20 dB and on-state insertion loss remains below –3 dB under 100 mA forward bias - confirming full functionality across LTE, Wi-Fi 5/6, and automotive radar bands.

Is the BAP64-04W suitable for automotive applications?

Yes, the BAP64-04W is AEC-Q101 qualified, meaning it has passed stress tests for temperature cycling, humidity, mechanical shock, and high-temperature operating life required for automotive under-hood and infotainment applications. Its 100 V reverse voltage rating and 150 °C junction temperature capability further support deployment in demanding vehicle environments.

How does the series diode configuration in the BAP64-04W improve RF performance?

The BAP64-04W's two-PIN-diodes-in-series configuration increases effective breakdown voltage and improves third-order intercept point (IP3) linearity compared to single-diode alternatives. This architecture reduces harmonic distortion in high-power RF paths and allows higher control current ranges (up to 100 mA) while maintaining low r_D and C_d - critical for broadband attenuator designs.

What is the thermal resistance of the BAP64-04W and how does it affect power handling?

The BAP64-04W has a thermal resistance R_th(j-sp) of 250 K/W from junction to solder point. With a total power dissipation limit of 240 mW and T_sp ≤ 90 °C, this implies a maximum allowable junction temperature rise of 60 K - supporting reliable operation at full 100 mA forward current in well-heatsinked PCB layouts with adequate copper area.

Can the BAP64-04W be used in zero-bias RF switch applications?

Yes, the BAP64-04W functions effectively in zero-bias mode, delivering >–20 dB isolation at 2 GHz (Figure 4) due to its low 0.23–0.35 pF capacitance at 20 V reverse bias. However, for optimal on-state performance, forward bias ≥10 mA is recommended to reduce r_D below 10 Ω and minimize insertion loss in high-frequency signal paths.

BAP64-04W,115 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: SC-70, SOT-323

Packaging:: Tape & Reel (TR)

Product Status:: Active

Diode Type:: PIN - 1 Pair Series Connection

Voltage - Peak Reverse (Max):: 100V

Current - Max:: 100 mA

Capacitance @ Vr, F:: 0.35pF @ 20V, 1MHz

Resistance @ If, F:: 1.35Ohm @ 100mA, 100MHz

Power Dissipation (Max):: 240 mW

Operating Temperature:: -65°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Supplier Device Package:: SC-70

BAP64-04W,115 FAQ

1.How can I place an order for BAP64-04W,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAP64-04W,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAP64-04W,115 reliable?

The price and inventory of BAP64-04W,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAP64-04W,115 is usually 5 days.

3.What payment methods are accepted for BAP64-04W,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAP64-04W,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAP64-04W,115?

BAP64-04W,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAP64-04W,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAP64-04W,115?

For technical support, including BAP64-04W,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAP64-04W,115 requirements.

6.How does Aetrix verify that BAP64-04W,115 is sourced from the original manufacturer or authorized distributors?

All BAP64-04W,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAP64-04W,115 meets industry standards.

7.What is the process for return or replacement of BAP64-04W,115?

All BAP64-04W,115 units undergo pre-shipment inspection (PSI). If there is an issue with BAP64-04W,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAP64-04W,115 part is unused and in its original packaging.

Return procedure for BAP64-04W,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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