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NXP Semiconductors BAP64-05W,115
- Part No.:
- BAP64-05W,115
- Manufacturer:
- NXP Semiconductors
- Category:
- RF Diodes
- Package:
- SC-70, SOT-323
- Datasheet:
-
BAP64-05W,115.pdf
- Description:
- RF DIODE PIN 100V 240MW SOT323
- Quantity:
- Payment:
- Shipping:
Inventory:2,735
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Product details
Overview
BAP64-05W from NXP Semiconductors is a silicon PIN diode in common-cathode dual configuration housed in an SOT323 package, rated for 100 V reverse voltage, 100 mA forward current, and operation up to 3 GHz. It delivers low diode capacitance (0.23–0.35 pF at VR = 20 V), low forward resistance (0.7–1.35 Ω at IF = 100 mA), and AEC-Q101 qualification for automotive RF switching.
For engineers reviewing the BAP64-05W datasheet, BAP64-05W pinout, BAP64-05W application, or BAP64-05W equivalent, key selection criteria include RF isolation performance (up to −25 dB at 1 GHz), insertion loss behavior across bias conditions, charge carrier lifetime (1.55 µs), and SOT323 thermal resistance (250 K/W).
Technical Context
The BAP64-05W integrates two identical planar PIN diodes sharing a single cathode terminal, enabling compact series-shunt RF switch topologies. Its intrinsic layer enables voltage-controlled RF resistance with minimal capacitive reactance across 1 MHz–3 GHz.
Designed for current-biased operation, it exhibits monotonic reduction in forward resistance (rD) from 40 Ω at 0.5 mA to 0.7 Ω at 100 mA and maintains sub-10 µA reverse leakage at 20 V - critical for high-linearity attenuator staging and T/R switching in 50 Ω systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Configuration | Dual anode / common cathode - supports balanced RF switch/attenuator designs without external node tying |
| Max Reverse Voltage (VR) | 100 V - enables use in high-voltage RF front-end protection and antenna tuning circuits |
| Diode Capacitance (Cd) | 0.23–0.35 pF at VR = 20 V - ensures minimal signal coupling and broadband impedance stability |
| Forward Resistance (rD) | 0.7–1.35 Ω at IF = 100 mA - provides low-loss RF conduction path in series-switch mode |
| Charge Carrier Lifetime (τL) | 1.55 µs - balances switching speed and intermodulation distortion for 900/1800 MHz cellular bands |
| Series Inductance (LS) | 1.2 nH - minimizes parasitic resonance impact up to 3 GHz operating frequency |
| AEC-Q101 Qualified | Validated for automotive under-hood RF modules requiring temperature cycling, humidity, and mechanical shock compliance |
Pinout & Package
SOT323 plastic surface-mounted package (3-lead, 1.3 × 1.8 mm footprint); thermally optimized for reflow soldering with junction-to-solder-point thermal resistance of 250 K/W.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode (A1) | Independent RF signal path input for first diode; enables differential or independent control |
| 2 | Anode (A2) | Independent RF signal path input for second diode; supports dual-path or redundancy architectures |
| 3 | Common Cathode (K) | Shared return node - simplifies PCB layout for shunt-switch configurations and reduces ground loop inductance |
Key Features
| Feature | Design Value |
|---|---|
| Low Series Inductance | 1.2 nH - preserves RF impedance integrity in stripline-based 50 Ω switch designs up to 3 GHz |
| High-Voltage Blocking | 100 V VR rating - supports LTE/5G front-end power handling without cascaded protection stages |
| Tight Cd Matching | 0.23–0.35 pF tolerance at VR = 20 V - ensures amplitude balance in dual-diode attenuator ladders |
| Fast Switching Response | 1.55 µs τL - enables <1 µs settling time in digitally controlled RF gain blocks with 10 mA bias |
| AEC-Q101 Qualification | Validated for automotive ambient temperatures (−40 °C to +125 °C) and vibration profiles per JESD22-A108 |
Applications
| Cellular Front-End Module | Automotive Telematics Antenna Switch |
|---|---|
Use Scenario: Dual-band (700/2600 MHz) LTE transmit/receive path selection in compact MIMO handset modules. IC Role / Device Role / Timing Role: Series-shunt PIN diode switch controlling RF signal routing between PA output and antenna ports. Use Value: Achieves >25 dB isolation at 2.6 GHz with <0.5 dB insertion loss at 100 mA bias - minimizing PA load-pull effects and TRX crosstalk. |
Use Scenario: GNSS/GSM diversity switching in automotive infotainment head units with space-constrained PCB layouts. IC Role / Device Role / Timing Role: Common-cathode dual diode enabling simultaneous control of GPS L1 and LTE Band 20 paths via shared bias network. Use Value: Reduces component count by eliminating separate cathode traces and supports AEC-Q101-compliant thermal cycling over −40 °C to +105 °C ambient. |
| RF Test Equipment Attenuator | ISM Band 2.4 GHz WiFi Switch |
Use Scenario: Precision 0–30 dB step attenuator in handheld spectrum analyzers requiring flat frequency response from 10 MHz to 3 GHz. IC Role / Device Role / Timing Role: Current-controlled RF resistor element in π-type attenuator topology with matched dual-diode arms. Use Value: Delivers ±0.2 dB attenuation accuracy across 100 kHz–2.5 GHz due to tight rD and Cd matching between A1/K and A2/K paths. |
Use Scenario: T/R switching in 802.11n/ac access point RF front-ends with concurrent 2.4 GHz TX/RX operation. IC Role / Device Role / Timing Role: Low-inductance series switch isolating PA output during RX mode while maintaining ESD robustness. Use Value: Enables <100 ns switching transitions with <−30 dBc harmonic suppression - meeting FCC Part 15 spectral mask requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF PIN diode switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon BAR63-03W | Single-diode SOT323; 75 V VR, 100 mA IF, higher Cd (0.45 pF @ 20 V) | Lacks common-cathode dual configuration - requires external cathode tie for dual-path use | Select when only one RF path needs switching and board area permits discrete cathode routing |
| ON Semiconductor MMBD640L | Single-diode SOT23; 75 V VR, 100 mA IF, lower rD (0.5 Ω typ), no AEC-Q101 rating | Higher thermal resistance (350 K/W) and non-automotive qualified - unsuitable for under-hood deployment | Select for cost-sensitive industrial test gear where automotive qualification is unnecessary |
Compared with BAR63-03W and MMBD640L, the BAP64-05W uniquely combines dual-anode/common-cathode topology, 100 V blocking, AEC-Q101 compliance, and sub-0.35 pF capacitance - making it the only option for space-constrained, high-isolation automotive RF switches requiring single-package dual-path control.
Availability
BAP64-05W is available at Aetrix Electronics and suitable for RF attenuators and switches, automotive telematics antenna routing, and cellular front-end modules requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for BAP64-05W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and mobile applications.
The BAP64-05W belongs to NXP's high-frequency PIN diode product line, engineered specifically for current-controlled RF switching and attenuation in automotive-grade wireless infrastructure and consumer radio front-ends.
FAQ
What is the maximum operating frequency of the BAP64-05W?
The BAP64-05W is characterized for operation up to 3 GHz, with typical isolation exceeding −25 dB at 1 GHz and insertion loss maintained below −0.5 dB at 100 mA forward bias - verified in 50 Ω stripline test fixtures per Figures 3 and 4 of the official datasheet.
Does the BAP64-05W support dual independent RF paths?
Yes - the BAP64-05W integrates two electrically isolated PIN diodes sharing a common cathode (Pin 3), allowing independent control of Anode 1 (Pin 1) and Anode 2 (Pin 2) for true dual-path RF switching without external node connections.
Is the BAP64-05W qualified for automotive applications?
Yes - the BAP64-05W is AEC-Q101 qualified, having passed stress tests including temperature cycling, humidity, mechanical shock, and high-temperature reverse bias per JESD22 standards, making it suitable for automotive telematics and infotainment RF modules.
What is the thermal resistance of the BAP64-05W?
The BAP64-05W has a junction-to-solder-point thermal resistance (Rth(j-sp)) of 250 K/W, measured under standard SMT reflow conditions - enabling reliable operation at 240 mW total power dissipation when soldered to a 1 cm² copper pad.
How does forward current affect the BAP64-05W's RF resistance?
At 100 MHz, the BAP64-05W's forward resistance (rD) decreases from ~40 Ω at 0.5 mA to 0.7 Ω at 100 mA, as shown in Figure 2 of the datasheet - enabling precise, current-tuned RF attenuation with predictable linearity in analog control loops.
BAP64-05W,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Type:
- PIN - 1 Pair Common Cathode
- Voltage - Peak Reverse (Max):
- 100V
- Current - Max:
- 100 mA
- Capacitance @ Vr, F:
- 0.35pF @ 20V, 1MHz
- Resistance @ If, F:
- 1.35Ohm @ 100mA, 100MHz
- Power Dissipation (Max):
- 240 mW
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Supplier Device Package:
- SC-70
BAP64-05W,115 FAQ
1.How can I place an order for BAP64-05W,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAP64-05W,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAP64-05W,115 reliable?
The price and inventory of BAP64-05W,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAP64-05W,115 is usually 5 days.
3.What payment methods are accepted for BAP64-05W,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAP64-05W,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAP64-05W,115?
BAP64-05W,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAP64-05W,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAP64-05W,115?
For technical support, including BAP64-05W,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAP64-05W,115 requirements.
6.How does Aetrix verify that BAP64-05W,115 is sourced from the original manufacturer or authorized distributors?
All BAP64-05W,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAP64-05W,115 meets industry standards.
7.What is the process for return or replacement of BAP64-05W,115?
All BAP64-05W,115 units undergo pre-shipment inspection (PSI). If there is an issue with BAP64-05W,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAP64-05W,115 part is unused and in its original packaging.
Return procedure for BAP64-05W,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAP64-05W,115 Tags
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BAP70-02,115
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