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NXP Semiconductors BAP64-06,215
- Part No.:
- BAP64-06,215
- Manufacturer:
- NXP Semiconductors
- Category:
- RF Diodes
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BAP64-06,215.pdf
- Description:
- RF DIODE PIN 175V 250MW TO236AB
- Quantity:
- Payment:
- Shipping:
Inventory:2,518
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Product details
Overview
BAP64-06,215 from NXP Semiconductors is a dual silicon PIN diode in common-anode configuration housed in an SOT23 package, rated for 175 V reverse voltage, 100 mA forward current, and operation up to 3 GHz. It serves as an RF resistor in high-frequency attenuators and switches, leveraging low capacitance (0.23–0.52 pF at VR = 1–20 V) and low forward resistance (0.7–3.8 Ω at IF = 10–100 mA).
For engineers reviewing the BAP64-06,215 datasheet, BAP64-06,215 pinout, BAP64-06,215 application, or BAP64-06,215 equivalent, key selection criteria include reverse voltage rating, RF insertion loss/isolation performance up to 3 GHz, common-anode dual-diode topology, AEC-Q101 qualification for automotive use, and SOT23 thermal resistance (220 K/W).
Technical Context
The BAP64-06,215 integrates two identical PIN diodes sharing a single anode terminal (Pin 3), enabling compact series/parallel RF switching or variable attenuation topologies without external interconnects. Its intrinsic layer delivers controlled charge carrier lifetime (1.55 μs typical), critical for predictable RF switching speed and linearity.
Designed for bias-controlled RF impedance modulation, it operates with DC forward current (0.5–100 mA) to dynamically adjust forward resistance (2.0–40 Ω) and reverse-biased capacitance (0.23–0.52 pF), supporting precise attenuation tuning and isolation above 20 dB at 2 GHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 175 V - supports high-voltage RF signal handling in transmitter front-ends and antenna switching. |
| Forward Current (IF) | 100 mA - enables low-resistance RF conduction path (0.7 Ω typ.) for minimal insertion loss. |
| Diode Capacitance (Cd) | 0.23–0.52 pF at VR = 1–20 V - ensures minimal capacitive loading in 50 Ω RF paths up to 3 GHz. |
| Forward Resistance (rD) | 0.7–40 Ω across IF = 0.5–100 mA - provides wide dynamic range for analog RF attenuation control. |
| Charge Carrier Lifetime (τL) | 1.55 μs - balances switching speed and distortion in broadband RF switch applications. |
| Series Inductance (LS) | 1.4 nH - minimizes parasitic reactance in high-frequency matching networks. |
| Thermal Resistance (Rth(j-sp)) | 220 K/W - defines power derating curve for continuous 250 mW dissipation at solder point ≤90 °C. |
Pinout & Package
Package: SOT23 - plastic surface-mounted package with 3 leads, footprint compatible with JEDEC TO-236AB standard; dimensions: 2.9 × 1.3 × 1.0 mm (L × W × H), 0.95 mm lead pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode 1 | Independent RF path terminal for first PIN diode; used in series-switch or shunt-attenuator configurations. |
| 2 | Cathode 2 | Independent RF path terminal for second PIN diode; enables dual-path control or differential RF routing. |
| 3 | Common Anode | Shared DC bias node for both diodes; simplifies control circuitry and reduces PCB routing complexity. |
Key Features
| Feature | Design Value |
|---|---|
| Common-anode dual-diode topology | Reduces component count and layout area in RF attenuator ICs or T/R switch modules requiring matched pair behavior. |
| AEC-Q101 qualification | Validates reliability for under-hood automotive RF systems including cellular/V2X antennas and radar front-ends. |
| Low series inductance (1.4 nH) | Maintains impedance integrity in 50 Ω stripline circuits up to 3 GHz, minimizing resonance-induced ripple. |
| RF isolation >20 dB at 2 GHz | Enables effective signal blocking in transmit/receive switching without external filtering components. |
| 0.52 pF max capacitance at 0 V reverse bias | Preserves bandwidth in wideband receiver front-ends where stray capacitance degrades noise figure. |
Applications
| Cellular Base Station Front-End | Automotive V2X Antenna Switching |
|---|---|
Use Scenario: Dynamic RF path selection between multiple transceivers and shared antenna arrays in 4G/5G macro base stations. IC Role / Device Role / Timing Role: Dual PIN diode acting as series-shunt RF switch controlling signal routing and isolation between Tx/Rx chains. Use Value: Achieves >20 dB isolation at 2.6 GHz while maintaining <0.5 dB insertion loss at 100 mA bias, reducing need for discrete baluns or isolators. | Use Scenario: High-reliability antenna switching between DSRC and C-V2X radios in ADAS modules operating in harsh temperature environments. IC Role / Device Role / Timing Role: AEC-Q101-qualified common-anode diode pair providing fail-safe RF path control during vehicle communication handover. Use Value: Delivers stable 0.37 pF capacitance at 1 V reverse bias and 1.55 μs carrier lifetime for deterministic switching timing across −40 °C to +125 °C. |
| Test Equipment RF Attenuation | Wireless Infrastructure Power Amplifier Protection |
Use Scenario: Precision programmable attenuator stage in vector network analyzers and signal generators requiring 0.1 dB resolution over 0–30 dB range. IC Role / Device Role / Timing Role: Bias-tuned RF resistor element whose forward resistance varies from 40 Ω to 0.7 Ω with 0.5–100 mA control current. Use Value: Enables monotonic, repeatable attenuation curves without harmonic distortion due to linearized I–V characteristics in PIN intrinsic region. | Use Scenario: Transient protection and load-matching control in GaN power amplifier output stages during fault conditions or band-switching events. IC Role / Device Role / Timing Role: Fast-switching RF limiter that clamps reflected power by transitioning from high-Z to low-Z state within 1.55 μs. Use Value: Limits peak reflected voltage to <175 V while dissipating 250 mW continuously, preventing PA damage during VSWR mismatch events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF PIN diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MACOM MADP-000907-14150T | Single-diode SOT-23; 100 V VR, 0.35 pF Cd at 20 V, 1.2 nH LS | Lacks dual-diode integration; requires external anode tie for common-anode function | Select when single-diode topology suffices and lower inductance is prioritized over dual-channel density. |
| Skyworks SMS7621-061LF | Single-diode SOT-23; 75 V VR, 0.25 pF Cd at 20 V, AEC-Q200 qualified | No AEC-Q101 rating; lower voltage rating limits use in high-power front-ends | Prefer for cost-sensitive consumer-grade RF switches where 75 V VR meets system requirements. |
Compared with MADP-000907-14150T and SMS7621-061LF, the BAP64-06,215 uniquely combines dual-diode integration, 175 V robustness, and AEC-Q101 qualification-enabling compact, automotive-grade RF switch designs without external wiring or derating compromises.
Availability
BAP64-06,215 is available at Aetrix Electronics and suitable for cellular infrastructure, automotive V2X systems, RF test equipment, and wireless power amplifier protection requiring stable component supply and long-term lifecycle support.
Supply support for BAP64-06,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.
The BAP64-06,215 belongs to NXP's high-frequency discrete diode product line, engineered specifically for RF signal control in demanding wireless infrastructure and automotive communication systems.
FAQ
What is the maximum operating frequency supported by the BAP64-06,215?
The BAP64-06,215 is characterized for operation up to 3 GHz, with typical isolation exceeding 20 dB at 2 GHz and insertion loss below 0.5 dB under 100 mA forward bias. Its 0.23–0.52 pF capacitance range and 1.4 nH series inductance maintain impedance stability across this band, making it suitable for 5G FR1, Wi-Fi 6E, and automotive C-V2X front-end designs.
Is the BAP64-06,215 pin-compatible with other dual-PIN diodes in SOT23 packages?
The BAP64-06,215 uses a standardized SOT23 outline per JEDEC TO-236AB, but its pin assignment (Pin 1 = cathode 1, Pin 2 = cathode 2, Pin 3 = common anode) is specific to this device. Substitution with other dual-diode SOT23 parts requires verification of identical pinout and common-anode topology-no generic pin-compatibility is guaranteed across manufacturers or families.
Does the BAP64-06,215 require external biasing circuitry for RF switching applications?
Yes-the BAP64-06,215 requires DC bias current (0.5–100 mA) applied to the common anode (Pin 3) relative to either cathode to control forward resistance. Typical implementations use RF chokes and DC blocking capacitors to separate RF and bias paths; no integrated bias circuitry is present on the BAP64-06,215 itself.
How does AEC-Q101 qualification impact the use of BAP64-06,215 in automotive designs?
AEC-Q101 qualification confirms the BAP64-06,215 has passed stress tests for temperature cycling, humidity, mechanical shock, and high-temperature operating life-validating its suitability for under-hood automotive RF systems such as V2X antenna switches and radar front-ends. This eliminates need for additional qualification testing by Tier 1 suppliers using the BAP64-06,215.
What thermal derating applies to the BAP64-06,215 at elevated ambient temperatures?
The BAP64-06,215 has a thermal resistance of 220 K/W from junction to solder point. At ambient temperatures above 25 °C, total power dissipation must be reduced linearly: for example, at 70 °C ambient and 90 °C solder point limit, maximum allowable power drops to 91 mW (250 mW × (1 − (70−25)/220)). Derating follows the Rth(j-sp) specification in Table 5 of the datasheet.
BAP64-06,215 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Diode Type:
- PIN - 1 Pair Common Anode
- Voltage - Peak Reverse (Max):
- 175V
- Current - Max:
- 100 mA
- Capacitance @ Vr, F:
- 0.35pF @ 20V, 1MHz
- Resistance @ If, F:
- 1.35Ohm @ 100mA, 100MHz
- Power Dissipation (Max):
- 250 mW
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Supplier Device Package:
- SOT-23 (TO-236AB)
BAP64-06,215 FAQ
1.How can I place an order for BAP64-06,215 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAP64-06,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAP64-06,215 reliable?
The price and inventory of BAP64-06,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAP64-06,215 is usually 5 days.
3.What payment methods are accepted for BAP64-06,215?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAP64-06,215 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAP64-06,215?
BAP64-06,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAP64-06,215 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAP64-06,215?
For technical support, including BAP64-06,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAP64-06,215 requirements.
6.How does Aetrix verify that BAP64-06,215 is sourced from the original manufacturer or authorized distributors?
All BAP64-06,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAP64-06,215 meets industry standards.
7.What is the process for return or replacement of BAP64-06,215?
All BAP64-06,215 units undergo pre-shipment inspection (PSI). If there is an issue with BAP64-06,215, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAP64-06,215 part is unused and in its original packaging.
Return procedure for BAP64-06,215:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAP64-06,215 Tags
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BAP70-02,115
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SMP1321-040LF
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NSVR351SDSA3T1G
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BAT6302VH6327XTSA1
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SMS7630-005LF
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SMP1322-040LF
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SMS7621-040LF
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SMS7621-079LF
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SMS7630-040LF
Skyworks Solutions Inc.
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