NXP Semiconductors BAP64-06W,115

Overview

BAP64-06W from NXP Semiconductors is a silicon PIN diode in common-anode dual configuration, housed in an SOT323 package. It delivers low forward resistance (0.7 Ω typ. at 100 mA), low capacitance (0.23 pF typ. at 20 V reverse bias), and operates up to 3 GHz - optimized for RF attenuators and switches in automotive-grade wireless infrastructure.

For engineers reviewing the BAP64-06W datasheet, BAP64-06W pinout, BAP64-06W application, or BAP64-06W equivalent, key selection criteria include its AEC-Q101 qualification, isolation performance (10.9 dB at 2450 MHz), insertion loss (0.16 dB at 2450 MHz under 100 mA bias), and common-anode dual-diode topology for compact RF signal routing.

Technical Context

The BAP64-06W integrates two planar PIN diodes sharing a single anode terminal, enabling bidirectional RF switching or balanced attenuator topologies without external node tying. Its low series inductance (1.6 nH) and controlled charge carrier lifetime (1.55 μs) support fast, repeatable RF state transitions in high-frequency front-end designs.

Designed for DC–3 GHz operation, it leverages silicon PIN structure to provide voltage-controlled RF resistance with minimal harmonic distortion - verified by second-order intercept point (IP2) data up to +150 dBm at 900 MHz and 1800 MHz under forward bias.

Key Specifications

Pinout & Package

Package: SOT323 - 3-lead plastic surface-mounted package (2.2 mm × 1.35 mm × 0.95 mm), optimized for RF layout density and thermal dissipation via solder-point conduction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF PIN diode switching applications.

Compared with SMS7630-061 and BAR63-03W, the BAP64-06W uniquely offers common-anode dual-diode integration in SOT323 with superior 2450 MHz isolation and lower capacitance - enabling smaller, higher-performance RF switch designs without layout rework.

Availability

BAP64-06W is available at Aetrix Electronics and suitable for cellular front-end modules, automotive telematics systems, and ISM-band IoT gateways requiring stable component supply across extended temperature ranges and multi-year production cycles.

Supply support for BAP64-06W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer applications.

The BAP64-06W belongs to NXP's RF PIN diode product line, engineered specifically for high-isolation, low-loss switching and attenuation in wireless infrastructure and automotive-grade RF front ends up to 3 GHz.

FAQ

What is the maximum operating frequency of the BAP64-06W?

The BAP64-06W is characterized and specified for operation from DC up to 3 GHz. Performance metrics including isolation (10.9 dB at 2450 MHz) and insertion loss (0.16 dB at 2450 MHz) are measured and guaranteed within this range per the official NXP datasheet Rev. 3.2. Operation beyond 3 GHz is not validated and may result in degraded RF parameters.

Does the BAP64-06W support automotive applications?

Yes, the BAP64-06W is AEC-Q101 qualified, confirming its suitability for automotive applications including telematics, V2X communication, and infotainment antenna switching. It operates reliably across −65 °C to +150 °C junction temperature and meets stress-test requirements for vibration, thermal cycling, and humidity resistance defined in the AEC-Q101 standard.

What is the pin configuration of the BAP64-06W?

The BAP64-06W uses a 3-pin SOT323 package with pins assigned as follows: Pin 1 = Cathode 1, Pin 2 = Cathode 2, Pin 3 = Common Anode. This common-anode dual-diode topology eliminates the need for external anode interconnection and simplifies bias network design in RF switch applications.

How does the BAP64-06W achieve low insertion loss at 2450 MHz?

The BAP64-06W achieves 0.16 dB insertion loss at 2450 MHz through low series inductance (1.6 nH), low forward resistance (0.7 Ω typ. at 100 mA), and minimized parasitic capacitance (0.23 pF typ. at 20 V reverse bias). These parameters collectively maintain high RF transmission efficiency in 50 Ω systems without requiring external matching networks.

Is the BAP64-06W RoHS compliant and halogen-free?

Yes, the BAP64-06W complies with EU RoHS Directive 2011/65/EU and is halogen-free per IEC 61249-2-21. This is confirmed in NXP's official product change notices and material declarations associated with the BAP64-06W v.3.2 datasheet and SOT323 package specifications.