My Inquiry
My Account
NXP Semiconductors BAP64LX,315
- Part No.:
- BAP64LX,315
- Manufacturer:
- NXP Semiconductors
- Category:
- RF Diodes
- Package:
- SOD-882
- Datasheet:
-
BAP64LX,315.pdf
- Description:
- RF DIODE PIN 60V 150MW SOD2
- Quantity:
- Payment:
- Shipping:
Inventory:29,934
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
BAP64LX from NXP Semiconductors is a silicon PIN diode in a DFN1006D-2 (SOD882D) ultra-small SMD package, designed as a voltage-controlled RF resistor for high-frequency switching and attenuation. It delivers 0.17 pF typical diode capacitance at 20 V reverse bias, 2.6 Ω typical forward resistance at 10 mA, and supports operation up to 2.45 GHz with 14 dB isolation and 0.24 dB insertion loss at full conduction - enabling compact RF front-end designs in mobile and automotive transceivers.
For engineers reviewing the BAP64LX datasheet, BAP64LX pinout, BAP64LX application, or BAP64LX equivalent, key selection criteria include its AEC-Q101 qualification, sub-1 nH series inductance, low 0.95 V forward voltage at 100 mA, and precise 1.0 µs charge carrier lifetime - all critical for high-isolation, low-loss RF switch design in space-constrained 5G and LTE modules.
Technical Context
The BAP64LX operates as a current-controlled variable RF resistor: forward bias modulates its intrinsic region conductivity to achieve tunable attenuation or switching states. Its planar PIN structure enables stable performance across DC–2.45 GHz with minimal parasitic inductance (0.4 nH) and tightly controlled capacitance roll-off versus reverse voltage.
Thermal design relies on direct junction-to-solder-point conduction via its leadless DFN1006D-2 package, delivering 56 K/W thermal resistance. The device sustains 100 mA forward current and 60 V reverse voltage while maintaining junction temperatures between –65 °C and +150 °C - supporting automotive under-hood deployment.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Diode capacitance | 0.17 pF typ. at VR = 20 V - enables high-impedance RF shunt paths above 2 GHz |
| Forward resistance | 2.6 Ω typ. at IF = 10 mA - ensures low-loss series RF signal path when fully biased |
| Isolation | 14 dB min. at f = 2450 MHz - provides effective RF signal blocking in transmit/receive switching |
| Insertion loss | 0.11 dB typ. at IF = 100 mA, f = 2450 MHz - minimizes signal attenuation in active RF paths |
| Charge carrier lifetime | 1.0 µs - balances switching speed and RF transient stability in pulsed applications |
| Series inductance | 0.4 nH - preserves broadband impedance match without external compensation |
| Reverse voltage rating | 60 V - supports robust operation in antenna tuning and diversity switch circuits |
Pinout & Package
Package: DFN1006D-2 (SOD882D), leadless ultra-small plastic SMD package; body dimensions 1.0 × 0.6 × 0.4 mm; cathode indicated by marking bar.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | cathode | RF return path and bias reference node; connects to ground or RF choke in series-switch topology |
| 2 | anode | RF signal input/output terminal; carries forward current during conduction state |
Key Features
| Feature | Design Value |
|---|---|
| High-voltage RF switching | 60 V reverse rating enables use in antenna detuning and T/R switching without external protection |
| Ultra-low capacitance | 0.17 pF at 20 V allows >2 GHz operation with minimal capacitive loading on RF traces |
| Low forward resistance | 2.6 Ω at 10 mA reduces I²R loss and thermal rise in high-duty-cycle RF switches |
| Minimal series inductance | 0.4 nH eliminates need for bond-wire compensation in 5G FR1 band layouts |
| AEC-Q101 qualification | Validated for automotive RF modules including cellular V2X and telematics antennas |
Applications
| Mobile Handset Antenna Switching | Automotive Cellular Telematics |
|---|---|
Use Scenario: Dynamic switching between primary and diversity LTE/5G antennas in smartphone PCBs with tight RF layout constraints. IC Role / Device Role / Timing Role: PIN diode RF switch element controlling signal path routing via DC bias control. Use Value: 0.24 dB insertion loss at 2.45 GHz and 0.17 pF capacitance minimize radiation efficiency degradation and maintain TRP/TIS compliance. |
Use Scenario: Transmit/receive switching in embedded eCall and C-V2X modules mounted near vehicle chassis. IC Role / Device Role / Timing Role: AEC-Q101-qualified RF switch isolating PA output from LNA input during duplex operation. Use Value: 14 dB isolation at 2.45 GHz prevents receiver desensitization; 56 K/W thermal resistance sustains reliability at 105 °C ambient. |
| Wi-Fi 6 Front-End Attenuation | ISM Band IoT Transceiver Tuning |
Use Scenario: Programmable attenuator stage in dual-band Wi-Fi 6 access point RF front ends requiring <0.5 dB step resolution. IC Role / Device Role / Timing Role: Voltage-variable RF resistor implementing analog attenuation via forward current control. Use Value: Linear rD vs. IF response (2.6 Ω at 10 mA → 0.9 Ω at 100 mA) enables precise 10–20 dB attenuation range with simple DAC biasing. |
Use Scenario: Antenna impedance matching network tuning in battery-powered LoRaWAN gateways operating at 868/915 MHz. IC Role / Device Role / Timing Role: Low-power RF switch reconfiguring matching network topology under microcontroller control. Use Value: 100 nA max reverse leakage at 60 V ensures negligible standby current drain; 1.0 µs carrier lifetime supports 1 MHz reconfiguration rates. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PIN diode RF switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMP1320-079LF | Higher 0.25 pF capacitance at 20 V; 3.5 Ω rD at 10 mA; no AEC-Q101 qualification | Targeted at commercial Wi-Fi and test equipment; not validated for automotive temperature cycling | Select when cost sensitivity outweighs automotive qualification and 0.08 pF capacitance advantage is non-critical |
| BAP50-03,115 | Larger SOT23-3 package (3.04 × 1.4 mm); 0.22 pF Cd at 20 V; 100 mA IF rating same | Requires larger PCB area; better thermal dissipation (Rth(j-a) = 300 K/W vs. 56 K/W to solder point) | Select when board-level thermal management dominates over size constraints and manual rework is acceptable |
Compared with SMP1320-079LF and BAP50-03,115, the BAP64LX offers superior high-frequency isolation and smallest footprint - making it optimal for miniaturized 5G handset and automotive telematics RF modules where space, thermal coupling to PCB, and automotive qualification are decisive.
Availability
BAP64LX is available at Aetrix Electronics and suitable for mobile handset antenna switching, automotive cellular telematics, and Wi-Fi 6 front-end attenuation requiring stable component supply across high-volume production ramps.
Supply support for BAP64LX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company specializing in secure connectivity solutions for automotive, industrial, and mobile applications, with leadership in RF power and signal processing technologies.
The BAP64LX belongs to NXP's high-frequency PIN diode product line, engineered specifically for compact, high-isolation RF switching and attenuation in space-constrained wireless infrastructure and automotive communication systems.
FAQ
What is the maximum operating frequency supported by the BAP64LX?
The BAP64LX is characterized for operation up to 2.45 GHz, with 14 dB isolation and 0.24 dB insertion loss specified at that frequency. Its 0.17 pF diode capacitance and 0.4 nH series inductance support stable RF performance through the entire 5G FR1 band (up to 3.8 GHz), though published specifications are validated to 2.45 GHz per the official datasheet.
Does the BAP64LX require external bias circuitry for RF switching applications?
Yes, the BAP64LX requires a DC bias network to control forward current - typically a series resistor and RF choke from a GPIO or DAC output. The BAP64LX itself contains no integrated bias control; its 100 mA absolute maximum forward current and 0.95 V forward voltage at 100 mA define the external driver requirements for reliable conduction-state operation.
How is the cathode identified on the BAP64LX DFN1006D-2 package?
The cathode of the BAP64LX is marked by a visible bar on the top surface of the DFN1006D-2 package, aligned with pin 1 per the official NXP pinning diagram. This marking bar corresponds to the cathode terminal listed in Table 1 of the BAP64LX datasheet and must be oriented toward the ground or bias-return net in PCB layout.
Is the BAP64LX suitable for high-reliability automotive applications?
Yes, the BAP64LX is AEC-Q101 qualified, meaning it has passed stress tests for temperature cycling, humidity, mechanical shock, and high-temperature operating life required for automotive electronic components. Its –65 °C to +150 °C junction temperature range and 56 K/W thermal resistance to solder point support under-hood deployment in cellular telematics modules.
What is the thermal resistance from junction to solder point for the BAP64LX?
The BAP64LX has a typical thermal resistance of 56 K/W from junction to solder point (Rth(j-sp)), measured under standard mounting conditions on a 10 mm² 1-oz copper pad. This value enables direct thermal coupling to the PCB, eliminating the need for thermal vias in most handheld and module-level applications where ambient temperature remains below 85 °C.
BAP64LX,315 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SOD-882
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Type:
- PIN - Single
- Voltage - Peak Reverse (Max):
- 60V
- Current - Max:
- 100 mA
- Capacitance @ Vr, F:
- 0.3pF @ 20V, 1MHz
- Resistance @ If, F:
- 1.5Ohm @ 100mA, 100MHz
- Power Dissipation (Max):
- 150 mW
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Supplier Device Package:
- SOD2
BAP64LX,315 FAQ
1.How can I place an order for BAP64LX,315 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAP64LX,315 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAP64LX,315 reliable?
The price and inventory of BAP64LX,315 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAP64LX,315 is usually 5 days.
3.What payment methods are accepted for BAP64LX,315?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAP64LX,315 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAP64LX,315?
BAP64LX,315 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAP64LX,315 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAP64LX,315?
For technical support, including BAP64LX,315 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAP64LX,315 requirements.
6.How does Aetrix verify that BAP64LX,315 is sourced from the original manufacturer or authorized distributors?
All BAP64LX,315 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAP64LX,315 meets industry standards.
7.What is the process for return or replacement of BAP64LX,315?
All BAP64LX,315 units undergo pre-shipment inspection (PSI). If there is an issue with BAP64LX,315, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAP64LX,315 part is unused and in its original packaging.
Return procedure for BAP64LX,315:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAP64LX,315 Tags
.jpg)
-
BAP70-02,115
NXP USA Inc.
-
SMP1321-040LF
Skyworks Solutions Inc.
-
NSVR351SDSA3T1G
onsemi
-
BAT6302VH6327XTSA1
Infineon Technologies
-
SMP1307-011LF
Skyworks Solutions Inc.
-
SMP1345-040LF
Skyworks Solutions Inc.
-
BAT1503WE6327HTSA1
Infineon Technologies
-
SMS7630-005LF
Skyworks Solutions Inc.
-
SMP1322-040LF
Skyworks Solutions Inc.
-
SMS7621-040LF
Skyworks Solutions Inc.
-
SMS7621-079LF
Skyworks Solutions Inc.
-
SMS7630-040LF
Skyworks Solutions Inc.
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
