NXP Semiconductors BAP64LX/Z,315

Overview

BAP64LX/Z,315 from NXP Semiconductors is a silicon PIN diode in a DFN1006D-2 (SOD882D) ultra-small leadless SMD package, functioning as a voltage-controlled RF resistor for high-frequency switching and attenuation up to 3 GHz. It delivers 0.17 pF typical diode capacitance at 20 V reverse bias, 2.6 Ω typical forward resistance at 10 mA, and 14 dB isolation at 2450 MHz - enabling compact, AEC-Q101-qualified RF front-end designs in automotive telematics.

For engineers reviewing the BAP64LX/Z,315 datasheet, BAP64LX/Z,315 pinout, BAP64LX/Z,315 application, or BAP64LX/Z,315 equivalent, key selection criteria include RF insertion loss vs. forward current (0.09 dB at 100 mA/900 MHz), low series inductance (0.4 nH), thermal resistance (56 K/W), and compatibility with high-reliability automotive signal routing where space-constrained 1.0 × 0.6 mm footprints are required.

Technical Context

The BAP64LX/Z,315 operates as a current-biased RF switch or attenuator element, leveraging its intrinsic-layer charge carrier lifetime (1.0 µs) and low forward resistance to modulate RF path impedance dynamically. Its performance is defined across 0.5–100 mA forward bias ranges, with isolation and insertion loss characterized at 900/1800/2450 MHz under stripline 50 Ω conditions.

Designed for DC–3 GHz operation, it uses planar silicon construction with cathode-anode polarity marked by a bar on the DFN1006D-2 top surface. Thermal management relies on direct junction-to-solder-point conduction (Rth(j-sp) = 56 K/W), supporting continuous 100 mA forward current within 150 mW total power dissipation limits.

Key Specifications

Pinout & Package

Package: DFN1006D-2 (SOD882D), leadless ultra-small plastic SMD package; body dimensions 1.0 × 0.6 × 0.4 mm; cathode identified by marking bar.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF PIN diode switching applications.

Compared with BAR63-03W and MMBD701LT1G, the BAP64LX/Z,315 provides superior high-frequency isolation (14 dB vs. ≤10 dB at 2450 MHz), tighter capacitance control (0.17 pF vs. ≥0.35 pF), and automotive-grade reliability - making it the preferred choice for space-constrained, safety-critical RF routing in telematics and 5G infrastructure.

Availability

BAP64LX/Z,315 is available at Aetrix Electronics and suitable for automotive telematics, cellular front-end modules, and industrial wireless sensor nodes requiring stable component supply, consistent parametric performance, and long-term lifecycle support.

Supply support for BAP64LX/Z,315 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT markets.

The BAP64LX/Z,315 belongs to NXP's high-frequency discrete portfolio, engineered specifically for AEC-Q101-compliant RF signal routing in compact, thermally constrained environments up to 3 GHz.

FAQ

What is the maximum RF frequency range supported by the BAP64LX/Z,315?

The BAP64LX/Z,315 is characterized and specified for operation up to 3 GHz, with measured isolation and insertion loss data provided at 900 MHz, 1800 MHz, and 2450 MHz. Its low series inductance (0.4 nH) and controlled capacitance profile ensure stable RF performance across this full range, making the BAP64LX/Z,315 suitable for LTE, Wi-Fi, and 5G NR sub-6 GHz applications.

How does the BAP64LX/Z,315 achieve AEC-Q101 qualification?

The BAP64LX/Z,315 achieves AEC-Q101 qualification through rigorous testing including temperature cycling, high-temperature reverse bias (HTRB), and electrostatic discharge (ESD) per human-body model (HBM). This validation confirms its suitability for automotive under-hood and infotainment applications where reliability across -40 °C to +125 °C ambient is mandatory - a requirement explicitly met by the BAP64LX/Z,315.

What is the forward voltage drop of the BAP64LX/Z,315 at 100 mA?

The BAP64LX/Z,315 exhibits a typical forward voltage (VF) of 0.95 V at 100 mA forward current, with a maximum of 1.1 V. This low VF reduces power dissipation in high-current RF switch bias networks and contributes to the device's 150 mW total power rating - a critical parameter for thermal design in densely packed RF modules using the BAP64LX/Z,315.

Can the BAP64LX/Z,315 be used in series or shunt RF switch configurations?

Yes, the BAP64LX/Z,315 supports both series and shunt RF switch topologies. In series configuration, the anode connects to the RF path and the cathode to ground; in shunt configuration, the cathode connects to the RF path and the anode to ground. Its symmetric low-inductance layout and 0.4 nH LS enable predictable behavior in either arrangement - a capability confirmed in the BAP64LX/Z,315 datasheet's application figures.

What is the thermal resistance from junction to solder point for the BAP64LX/Z,315?

The BAP64LX/Z,315 has a typical thermal resistance from junction to solder point (Rth(j-sp)) of 56 K/W. This value reflects efficient heat transfer from the silicon die directly into the PCB copper via the exposed pad structure of the DFN1006D-2 package. Designers use this Rth(j-sp) to calculate junction temperature rise under bias conditions - essential for ensuring long-term reliability of the BAP64LX/Z,315 in thermally demanding RF applications.