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NXP Semiconductors BAP65-02,135

Part No.:
BAP65-02,135
Manufacturer:
NXP Semiconductors
Category:
RF Diodes
Package:
SC-79, SOD-523
Datasheet:
AetrixBAP65-02,135.pdf
Description:
RF DIODE PIN 30V 715MW SOD523
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,348

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Product details

Overview

BAP65-02,135 from NXP Semiconductors is a silicon PIN diode in SOD523 package, designed as an RF switch element with 0.375 pF reverse-biased capacitance at 20 V, 0.35 Ω forward resistance at 100 mA, and AEC-Q101 qualification for automotive-grade reliability. It operates in mobile transmit/receive paths and TV tuner bandswitches.

For engineers reviewing the BAP65-02,135 datasheet, BAP65-02,135 pinout, BAP65-02,135 application, or BAP65-02,135 equivalent, key selection criteria include RF isolation (4.4 dB at 2450 MHz), ultra-low series inductance (0.6 nH), and voltage-controlled RF resistance behavior in high-frequency switching circuits.

Technical Context

The BAP65-02,135 functions as a current-controlled RF resistor: forward bias current modulates its series resistance (0.56–0.9 Ω at 5–10 mA), while reverse bias sets low, voltage-tunable capacitance (0.375–0.65 pF). Its planar PIN structure enables fast carrier lifetime (0.17 μs) for rapid RF switching transitions.

Designed for integration into 50 Ω strip-line circuits, it delivers frequency-dependent insertion loss (0.07–0.13 dB from 900–2450 MHz) and isolation (4.4–10 dB over same range), with thermal resistance of 85 K/W from junction to solder point under Tsp ≤ 90 °C.

Key Specifications

Parameter Value and Actual Design Meaning
Diode Capacitance (Cd) 0.375 pF at VR = 20 V - enables high-impedance RF blocking in broadband switches up to 2.45 GHz
Forward Resistance (rD) 0.35 Ω at IF = 100 mA - minimizes insertion loss in series-switch configurations
Isolation (ISL) 4.4 dB at f = 2450 MHz - provides measurable signal rejection in antenna diversity paths
Series Inductance (LS) 0.6 nH at f = 100 MHz - preserves high-frequency impedance integrity in compact SOD523 layout
Charge Carrier Lifetime (τL) 0.17 μs - supports sub-microsecond switching speed in time-division duplex systems
Reverse Voltage (VR) 30 V continuous - accommodates transient surges in automotive RF front-ends
Ambient Temperature Range −40 °C to +85 °C - validated for operation in consumer and automotive mobile environments

Pinout & Package

Package: SOD523 - ultra-small surface-mount plastic package (1.25 × 0.85 × 0.65 mm), cathode marked by bar on top surface.

Pin/Terminal Circuit Role Design Meaning
1 Cathode Reference terminal for reverse-bias control; marking bar on package identifies this pin
2 Anode Current entry point during forward conduction; connects to RF signal path in series-switch topology

Key Features

Feature Design Value
Low Diode Capacitance 0.375 pF at 20 V reverse bias - maintains high off-state impedance across UHF/SHF bands
Low Forward Resistance 0.35 Ω at 100 mA - reduces I²R loss and thermal rise in high-duty-cycle RF switches
Very Low Series Inductance 0.6 nH - avoids resonance and impedance mismatch above 1 GHz
AEC-Q101 Qualified Validated for automotive temperature, humidity, and vibration stress - suitable for infotainment and telematics RF modules
Ultra-Small SMD Package SOD523 footprint (1.25 × 0.85 mm) - enables dense RF front-end layouts in space-constrained mobile PCBs

Applications

Mobile Transmit/Receive Switch TV Tuner Bandswitch

Use Scenario: Dual-band LTE/WCDMA handset requiring antenna sharing between TX and RX paths without duplexer.

IC Role / Device Role / Timing Role: Series-connected PIN diode acting as current-controlled RF switch with <100 ns turn-on/off.

Use Value: Enables single-antenna operation with 0.07 dB insertion loss at 1800 MHz and 4.4 dB isolation at 2450 MHz.

Use Scenario: Analog/digital TV tuner selecting VHF/UHF bands via discrete RF path routing.

IC Role / Device Role / Timing Role: Voltage-biased shunt or series switch controlling bandpass filter input coupling.

Use Value: Provides stable 0.55 pF capacitance at 1 V reverse bias for predictable filter tuning across 47–862 MHz.

Automotive Infotainment Antenna Diversity ISM-Band RF Attenuator

Use Scenario: Multi-antenna GPS/GNSS and cellular reception in vehicle dashboard with thermal cycling from −40 °C to +85 °C.

IC Role / Device Role / Timing Role: AEC-Q101-qualified PIN diode used in receive-path diversity combiner with DC bias control.

Use Value: Delivers consistent 0.375 pF Cd and 85 K/W thermal resistance for long-term reliability in under-dash environments.

Use Scenario: Programmable RF attenuator stage in 2.4 GHz Wi-Fi test equipment requiring precise 0.1–10 dB step control.

IC Role / Device Role / Timing Role: Current-biased PIN diode operating in quasi-linear resistive region (rD = 0.56–0.95 Ω).

Use Value: Achieves monotonic attenuation response with <0.01 dB hysteresis due to low τL (0.17 μs) and stable rD vs. IF.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF PIN diode applications.

Alternative Part Technical Difference Application Difference Selection Advice
Infineon BAR63-02VH6327XTSA1 Higher Cd (0.5 pF @ 20 V), lower IF rating (50 mA), same SOD523 package Less suited for high-current TX paths; better for low-power receive switching Select when forward current remains ≤50 mA and higher capacitance tolerance is acceptable
ON Semiconductor MMBD6550LT1G Higher VR (50 V), larger SOT-23 package, rD = 0.6 Ω @ 10 mA (not specified at 100 mA) Requires PCB redesign; offers higher surge margin but degraded HF performance above 1 GHz Choose only if 50 V reverse rating is mandatory and SOD523 size constraint is relaxed

Compared with BAR63-02VH6327XTSA1 and MMBD6550LT1G, the BAP65-02,135 uniquely balances ultra-low Cd, sub-0.4 Ω rD at full 100 mA drive, and AEC-Q101 compliance in the smallest SMD footprint-making it optimal for space- and power-sensitive automotive and mobile RF switches.

Availability

BAP65-02,135 is available at Aetrix Electronics and suitable for mobile transmit/receive switching, TV tuner bandselection, and automotive infotainment antenna diversity applications requiring stable component supply, traceable sourcing, and lifecycle continuity.

Supply support for BAP65-02,135 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and mobile markets.

The BAP65-02,135 belongs to NXP's high-frequency discrete PIN diode product line, engineered specifically for RF switching and attenuation in compact, thermally constrained wireless front-ends.

FAQ

What is the maximum continuous forward current rating for the BAP65-02,135?

The BAP65-02,135 has a maximum continuous forward current (IF) rating of 100 mA, as specified in Table 4 of the official NXP datasheet Rev. 6.1. This rating applies under standard ambient conditions and is critical for maintaining forward resistance below 0.35 Ω and avoiding thermal runaway in RF switch designs using the BAP65-02,135.

Does the BAP65-02,135 support automotive qualification standards?

Yes, the BAP65-02,135 is explicitly AEC-Q101 qualified per Section 1.2 of the NXP datasheet. This certification confirms its suitability for automotive applications including infotainment, telematics, and GNSS modules operating across −40 °C to +125 °C junction temperatures, with validation for mechanical shock, temperature cycling, and humidity testing required by the AEC-Q101 standard.

What is the typical diode capacitance of the BAP65-02,135 at 20 V reverse bias?

The typical diode capacitance (Cd) of the BAP65-02,135 is 0.375 pF at VR = 20 V and f = 1 MHz, as stated in Table 6 of the NXP datasheet. This ultra-low value enables high off-state impedance in RF switches up to 2.45 GHz and is measured under controlled thermal conditions (Tj = 25 °C).

How is the cathode identified on the BAP65-02,135 package?

The cathode of the BAP65-02,135 is identified by a marking bar on the top surface of the SOD523 package, corresponding to Pin 1 as defined in Table 1 of the NXP datasheet. This visual indicator aligns with the standardized SOD523 outline in Figure 5 and must be verified during PCB layout and assembly to ensure correct polarity in RF signal paths using the BAP65-02,135.

What is the thermal resistance from junction to solder point for the BAP65-02,135?

The thermal resistance from junction to solder point (Rth(j-sp)) for the BAP65-02,135 is 85 K/W, as specified in Table 5 of the NXP datasheet. This parameter assumes solder point temperature (Tsp) ≤ 90 °C and is essential for calculating junction temperature rise under continuous forward bias, especially in thermally dense RF modules using the BAP65-02,135.

BAP65-02,135 Specifications

Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Series:
-
Package/Case:
SC-79, SOD-523
Packaging:
Tape & Reel (TR)
Product Status:
Active
Diode Type:
PIN - Single
Voltage - Peak Reverse (Max):
30V
Current - Max:
100 mA
Capacitance @ Vr, F:
0.375pF @ 20V, 1MHz
Resistance @ If, F:
350mOhm @ 100mA, 100MHz
Power Dissipation (Max):
715 mW
Operating Temperature:
-65°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Supplier Device Package:
SOD-523

BAP65-02,135 FAQ

1.How can I place an order for BAP65-02,135 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAP65-02,135 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAP65-02,135 reliable?

The price and inventory of BAP65-02,135 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAP65-02,135 is usually 5 days.

3.What payment methods are accepted for BAP65-02,135?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAP65-02,135 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAP65-02,135?

BAP65-02,135 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAP65-02,135 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAP65-02,135?

For technical support, including BAP65-02,135 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAP65-02,135 requirements.

6.How does Aetrix verify that BAP65-02,135 is sourced from the original manufacturer or authorized distributors?

All BAP65-02,135 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAP65-02,135 meets industry standards.

7.What is the process for return or replacement of BAP65-02,135?

All BAP65-02,135 units undergo pre-shipment inspection (PSI). If there is an issue with BAP65-02,135, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAP65-02,135 part is unused and in its original packaging.

Return procedure for BAP65-02,135:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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