NXP Semiconductors BAP70-03,115

Overview

BAP70-03,115 from NXP Semiconductors is a silicon PIN diode in SOD323 (SC-76) surface-mount package, designed as a high-voltage current-controlled RF resistor for attenuator circuits. It delivers 50 V reverse voltage rating, 100 mA forward current capability, 200–570 fF tunable capacitance (VR = 20–0 V), sub-2 nH series inductance, and <2 μs carrier lifetime - enabling precise RF signal control in satellite TV front-ends and automotive radio tuners.

For engineers reviewing the BAP70-03,115 datasheet, BAP70-03,115 pinout, BAP70-03,115 application, or BAP70-03,115 equivalent, key selection criteria include reverse voltage handling, RF resistance tuning range (1.4–77 Ω at 100 MHz), low parasitic capacitance variation with bias, thermal resistance (120 K/W), and SOD323 footprint compatibility in space-constrained RF modules.

Technical Context

The BAP70-03,115 operates as a voltage-variable RF resistor via forward-bias current control, leveraging its intrinsic region to achieve low capacitance and minimal series inductance. Its charge carrier lifetime of 1.25 μs supports fast switching between attenuation states in T/R switch and AGC circuits.

Designed for RF signal path conditioning, it exhibits monotonic forward resistance reduction from 77 Ω (IF = 0.5 mA) to 1.4 Ω (IF = 100 mA) at 100 MHz, while maintaining stable reverse leakage (<100 nA at VR = 50 V) and junction temperature tolerance up to +150 °C.

Key Specifications

Pinout & Package

Package: SOD323 (SC-76), 2-lead plastic surface-mounted package with cathode-marked end. Dimensions: 1.7 × 1.25 × 0.95 mm (L × W × H); solder point thermal interface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PIN diode RF attenuator applications.

Compared with BAR63-03W and MMBAP70-03, the BAP70-03,115 offers superior 50 V reverse voltage headroom for satellite LNB applications and matches MMBAP70-03's core RF parameters while differing in automotive qualification status and traceability.

Availability

BAP70-03,115 is available at Aetrix Electronics and suitable for satellite TV tuners, automotive radio receivers, RF test instrumentation, and ISM-band transceiver designs requiring stable component supply and consistent RF performance across production lots.

Supply support for BAP70-03,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer applications.

The BAP70-03,115 belongs to NXP's RF discrete portfolio, engineered specifically for high-linearity, low-parasitic RF signal conditioning in broadcast and wireless infrastructure - emphasizing voltage-tunable resistance, thermal stability, and SMD manufacturability.

FAQ

What is the maximum reverse voltage rating for the BAP70-03,115?

The BAP70-03,115 has a maximum continuous reverse voltage rating of 50 V, as specified in Table 4 of the NXP datasheet under Absolute Maximum Ratings. This rating applies at ambient temperatures up to +90 °C and defines the upper limit for DC blocking in RF shunt configurations without risk of junction breakdown. Exceeding this value may cause permanent device failure.

How does forward current affect RF resistance in the BAP70-03,115?

In the BAP70-03,115, forward current directly controls RF resistance: at 100 MHz, rD decreases from 77 Ω (IF = 0.5 mA) to 1.4 Ω (IF = 100 mA), per Table 6. This linearized tuning behavior enables precise analog attenuation without digital control circuitry. The relationship is verified across production lots and remains stable up to 125 °C junction temperature.

What is the diode capacitance range of the BAP70-03,115 at 1 MHz?

The BAP70-03,115 exhibits a diode capacitance range of 200–570 fF at 1 MHz, varying with applied reverse voltage: 200–250 fF at VR = 20 V, 270 fF at VR = 5 V, 400 fF at VR = 1 V, and 570 fF at VR = 0 V (Table 6). This voltage-dependent C-V characteristic supports impedance matching in tunable RF filters and matching networks.

Is the BAP70-03,115 suitable for automotive applications?

The BAP70-03,115 is not automotive-qualified per NXP's legal disclaimers (Section 11.3), which explicitly state non-automotive qualification unless expressly stated. While it operates from −65 to +150 °C, it lacks AEC-Q200 stress testing and automotive-specific traceability. For automotive use, consider the functionally identical MMBAP70-03, which carries AEC-Q200 Grade 3 certification.

What package type and marking does the BAP70-03,115 use?

The BAP70-03,115 uses the SOD323 (SC-76) plastic surface-mount package, with dimensions 1.7 × 1.25 × 0.95 mm. Its top-side marking is "A9", as confirmed in Table 3 of the NXP datasheet. Pin 1 (cathode) is identified by the cathode bar on the package body, aligned with the marking end.