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NXP Semiconductors BAP70-04W,115
- Part No.:
- BAP70-04W,115
- Manufacturer:
- NXP Semiconductors
- Category:
- RF Diodes
- Package:
- SC-70, SOT-323
- Datasheet:
-
BAP70-04W,115.pdf
- Description:
- RF DIODE PIN 50V 260MW SOT323-3
- Quantity:
- Payment:
- Shipping:
Inventory:6,984
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Product details
Overview
BAP70-04W from NXP Semiconductors is a silicon PIN diode in SOT323 package, configured as two planar PIN diodes in series for high-voltage RF current control. It delivers 250–300 fF diode capacitance at 20 V reverse bias, 5.4–7 Ω forward resistance at 10 mA, and is AEC-Q101 qualified for automotive RF attenuators.
For engineers reviewing the BAP70-04W datasheet, BAP70-04W pinout, BAP70-04W application, or BAP70-04W equivalent, key selection criteria include reverse voltage rating (50 V), low series inductance (1.4 nH), charge carrier lifetime (1.25 μs), thermal resistance (230 K/W), and SOT323 pin-compatible layout compatibility in RF front-end designs.
Technical Context
The BAP70-04W integrates two monolithic PIN diodes in series to increase voltage handling while maintaining low capacitance and inductance-critical for broadband RF attenuator linearity and switching speed. Its 1.25 μs carrier lifetime enables controlled turn-off behavior in pulsed RF paths.
Designed for constant-current biasing in variable RF resistors, it operates with forward current up to 100 mA and reverse voltage up to 50 V. The SOT323 package provides a thermally efficient junction-to-solder-point path (Rth(j-s) = 230 K/W) suitable for compact RF modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 50 V continuous - sets maximum RF signal swing before breakdown in attenuator shunt legs |
| Forward Resistance (rD) | 5.4–7 Ω at IF = 10 mA - defines RF insertion loss and attenuation step resolution |
| Diode Capacitance (Cd) | 250–300 fF at VR = 20 V - determines high-frequency cutoff and impedance matching stability |
| Series Inductance (LS) | 1.4 nH at 100 MHz - minimizes parasitic reactance in GHz-range switch/attenuator paths |
| Charge Carrier Lifetime (τL) | 1.25 μs - governs RF switching speed and transient response in modulated signals |
| Thermal Resistance (Rth(j-s)) | 230 K/W - enables power dissipation up to 260 mW without external heatsinking in SMT layouts |
Pinout & Package
SOT323 plastic surface-mounted package (3 leads), 1.35 × 1.15 × 0.95 mm footprint, compatible with standard SC-70 reflow profiles.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode of first diode | Input node for series-connected RF current path; connects to RF source or driver stage |
| 2 | Cathode of second diode | Output node for series-connected RF current path; interfaces to load or next stage |
| 3 | Common connection | Shared cathode/anode junction point - enables bidirectional RF control in symmetric attenuator topologies |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive under-hood RF modules requiring -40 °C to +125 °C operation and vibration resilience |
| Low diode capacitance | 600 fF typical at 0 V reverse bias - preserves wideband impedance match beyond 1 GHz |
| Low series inductance | 1.4 nH - reduces frequency-dependent phase shift in precision RF gain control |
| Two-diode series configuration | Doubles reverse voltage tolerance vs. single PIN diode - enables 50 V-rated attenuators without stacking discrete devices |
Applications
| Cellular Base Station Front-End | Automotive Radar Receiver Attenuation |
|---|---|
Use Scenario: Dynamic range compression in LTE/5G transceiver receive chains to prevent ADC saturation during strong interferer conditions. IC Role / Device Role / Timing Role: Voltage-controlled RF resistor in shunt-mode attenuator topology, biased via DC feed network. Use Value: 250–300 fF capacitance and 5.4–7 Ω rD enable <0.5 dB insertion loss variation across 700 MHz–3.8 GHz band. | Use Scenario: Adjustable gain control in 77 GHz radar receiver LNA input stage to maintain SNR across varying target distances. IC Role / Device Role / Timing Role: Series-connected PIN diode pair acting as programmable RF termination in reflection-type attenuator. Use Value: 1.25 μs τL supports fast AGC loop response (<10 μs settling) without overshoot in pulsed FMCW waveforms. |
| Wi-Fi 6E Access Point Power Control | Industrial IoT Wireless Gateway RF Calibration |
Use Scenario: Closed-loop transmit power leveling across 2.4/5/6 GHz bands using digital bias control and RSSI feedback. IC Role / Device Role / Timing Role: High-linearity RF variable resistor in π-type attenuator network between PA output and antenna switch. Use Value: 50 V VR rating allows safe operation with 30 dBm peak PA output; SOT323 footprint enables dense multi-band layout. | Use Scenario: Factory calibration of RF path loss in sub-GHz LoRaWAN gateways using known reference signals. IC Role / Device Role / Timing Role: Precision RF attenuator element in automated test fixture, controlled by microcontroller DAC. Use Value: 230 K/W Rth(j-s) ensures stable rD over 1000+ calibration cycles without thermal drift-induced measurement error. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF attenuator applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAP70-03W | Single PIN diode in SOT323; 25 V VR rating; higher Cd (350 fF typ at 20 V) | Lower voltage RF switches and fixed attenuators where 50 V headroom is unnecessary | Select when cost sensitivity outweighs voltage margin and bandwidth requirements |
| MA4P7472F-1072T | Single GaAs PIN diode in SOT-23; 100 V VR; lower rD (3.5 Ω typ at 10 mA); higher cost | High-reliability military/aerospace RF systems requiring extended voltage margin and faster τL (0.3 μs) | Choose for >50 V RF environments or sub-microsecond switching where GaAs performance justifies premium |
Compared with BAP70-03W and MA4P7472F-1072T, the BAP70-04W uniquely balances automotive qualification, dual-diode voltage doubling, and SOT323 manufacturability-making it optimal for cost-sensitive, AEC-Q101-compliant RF attenuators operating up to 50 V in consumer and industrial wireless infrastructure.
Availability
BAP70-04W is available at Aetrix Electronics and suitable for cellular base station front-ends, automotive radar receivers, and Wi-Fi 6E access point power control requiring stable component supply and AEC-Q101 compliance.
Supply support for BAP70-04W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.
The BAP70 series targets RF front-end design, specifically engineered to deliver high-voltage, low-capacitance PIN diode performance in miniature SMD packages for attenuators and switches in wireless infrastructure and automotive radar.
FAQ
What is the maximum reverse voltage rating for the BAP70-04W?
The BAP70-04W has a continuous reverse voltage rating of 50 V, as specified in its Absolute Maximum Ratings table. This rating applies under steady-state DC or RF signal conditions and must not be exceeded to avoid permanent device damage. Operation near this limit requires careful thermal management due to associated power dissipation in the BAP70-04W's 230 K/W thermal resistance path.
How does the BAP70-04W differ from single-diode PIN devices like the BAP70-03W?
The BAP70-04W integrates two PIN diodes in series within one SOT323 package, doubling the effective reverse voltage rating to 50 V versus 25 V for the BAP70-03W. It also exhibits lower capacitance (250–300 fF vs. 350 fF typical at 20 V) and tighter forward resistance spread, making the BAP70-04W preferable for high-voltage RF attenuators where space and voltage margin are critical.
Is the BAP70-04W suitable for automotive radar applications?
Yes, the BAP70-04W is AEC-Q101 qualified and rated for junction temperatures from –65 °C to +150 °C, making it suitable for automotive radar receiver attenuators. Its 1.25 μs charge carrier lifetime supports fast AGC response in 77 GHz FMCW systems, and its SOT323 package withstands automotive vibration and thermal cycling per the qualification standard.
What is the typical forward resistance of the BAP70-04W at 10 mA bias current?
The BAP70-04W exhibits a typical forward resistance (rD) of 5.4–7 Ω at 10 mA forward current and 100 MHz, as confirmed in its Characteristics table. This value directly impacts RF insertion loss and attenuation linearity in shunt or series attenuator configurations, and remains stable across temperature due to its silicon PIN structure.
Does the BAP70-04W require special PCB layout considerations for RF performance?
Yes-the BAP70-04W's 1.4 nH series inductance and 250–300 fF capacitance demand minimized trace length and ground return path inductance. Use short, direct connections to RF ports, avoid vias near pins 1 and 2, and place DC blocking capacitors adjacent to the common (pin 3) terminal. The SOT323 footprint supports these requirements but requires tight layout control to preserve the BAP70-04W's specified RF characteristics.
BAP70-04W,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Diode Type:
- PIN - 1 Pair Series Connection
- Voltage - Peak Reverse (Max):
- 50V
- Current - Max:
- 100 mA
- Capacitance @ Vr, F:
- 0.3pF @ 20V, 1MHz
- Resistance @ If, F:
- 1.9Ohm @ 100mA, 100MHz
- Power Dissipation (Max):
- 260 mW
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Supplier Device Package:
- SC-70
BAP70-04W,115 FAQ
1.How can I place an order for BAP70-04W,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAP70-04W,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAP70-04W,115 reliable?
The price and inventory of BAP70-04W,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAP70-04W,115 is usually 5 days.
3.What payment methods are accepted for BAP70-04W,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAP70-04W,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAP70-04W,115?
BAP70-04W,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAP70-04W,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAP70-04W,115?
For technical support, including BAP70-04W,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAP70-04W,115 requirements.
6.How does Aetrix verify that BAP70-04W,115 is sourced from the original manufacturer or authorized distributors?
All BAP70-04W,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAP70-04W,115 meets industry standards.
7.What is the process for return or replacement of BAP70-04W,115?
All BAP70-04W,115 units undergo pre-shipment inspection (PSI). If there is an issue with BAP70-04W,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAP70-04W,115 part is unused and in its original packaging.
Return procedure for BAP70-04W,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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