NXP Semiconductors BAP70-05,215

Overview

BAP70-05 from NXP Semiconductors is a silicon PIN diode pair in common-cathode configuration housed in an SOT23 package, rated for 50 V reverse voltage, 100 mA forward current, and 250 mW total power dissipation. It delivers low diode capacitance (250–300 fF at 20 V), low series inductance (1.4 nH), and fast charge carrier lifetime (1.25 μs), enabling precise RF signal control in high-frequency attenuators and switches.

For engineers reviewing the BAP70-05 datasheet, BAP70-05 pinout, BAP70-05 application, or BAP70-05 equivalent, key selection criteria include its AEC-Q101 qualification, dual-anode common-cathode topology, RF-grade capacitance and resistance behavior across 1 MHz–100 MHz, and thermal resistance of 220 K/W from junction to solder point.

Technical Context

The BAP70-05 integrates two independent PIN diodes sharing a single cathode terminal, forming a compact, thermally coupled switching/attenuation cell optimized for RF signal path control. Its intrinsic layer enables voltage-controlled resistance modulation with minimal capacitance variation under reverse bias.

Operation relies on forward-bias current tuning of series resistance (rD = 5.4–7 Ω at IF = 10 mA; 1.4–1.9 Ω at IF = 100 mA) while maintaining sub-300 fF capacitance up to 20 V reverse bias - critical for broadband impedance matching and low-distortion RF switching.

Key Specifications

Pinout & Package

Package: SOT23 - plastic surface-mounted package with 3 leads, 1.3 mm height, 2.9 mm × 1.3 mm footprint, and JEDEC TO-236AB outline.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PIN diode switching and attenuation applications.

Compared with BAR63-03W and MMBAP70-05, the BAP70-05 uniquely combines dual-anode integration, 50 V robustness, and sub-300 fF capacitance in a single AEC-Q101-qualified SOT23 - making it optimal for space-constrained, high-reliability RF switching where matched dual-diode behavior is essential.

Availability

BAP70-05 is available at Aetrix Electronics and suitable for RF attenuators and switches, automotive radar front-ends, and broadcast receiver limiters requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BAP70-05 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.

The BAP70-05 belongs to NXP's high-frequency discrete diode product line, engineered specifically for RF signal conditioning in automotive radar, 5G infrastructure, and professional broadcast systems where precision, reliability, and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum reverse voltage rating for the BAP70-05?

The BAP70-05 has a maximum continuous reverse voltage rating of 50 V, as specified in Table 4 of the official NXP datasheet (Rev. 6, December 2018). This rating applies under steady-state conditions and defines the upper limit for safe operation in RF switch off-states or limiter clamping applications. Exceeding this value risks permanent junction breakdown. The BAP70-05 must not be operated beyond 50 V VR in any design using the BAP70-05.

Does the BAP70-05 support automotive-grade reliability requirements?

Yes, the BAP70-05 is AEC-Q101 qualified, confirming its suitability for automotive applications including engine control units, ADAS radar modules, and infotainment systems. This qualification covers stress testing for temperature cycling, humidity, mechanical shock, and high-temperature operating life. The BAP70-05 meets these standards as documented in NXP's official product data sheet, making the BAP70-05 appropriate for deployment in harsh vehicular environments.

How does the common-cathode configuration of the BAP70-05 benefit RF circuit design?

The common-cathode configuration of the BAP70-05 allows both PIN diodes to share a single cathode terminal (Pin 3), reducing PCB routing complexity and improving thermal coupling between diodes. This architecture simplifies bias network design for balanced RF switches or differential attenuators and enhances tracking of forward resistance and capacitance under varying temperature and current conditions. The BAP70-05 leverages this topology to deliver matched performance unattainable with discrete single-diode packages.

What is the typical diode capacitance of the BAP70-05 at 20 V reverse bias?

At 20 V reverse bias and 1 MHz, the BAP70-05 exhibits a typical diode capacitance of 250 fF, with a maximum of 300 fF, as confirmed in Table 6 of the NXP datasheet. This low, tightly controlled capacitance enables minimal RF signal leakage and stable impedance matching in shunt-switch and series-attenuator topologies. Designers using the BAP70-05 can rely on this value for accurate simulation and layout of 5G and automotive radar circuits.

Is the BAP70-05 pin-compatible with other SOT23-packaged PIN diodes?

The BAP70-05 uses standard SOT23 pinout (Anode1–Anode2–Common Cathode), but pin compatibility depends on internal topology - many SOT23 PIN diodes are single-element or have different cathode/anode arrangements. The BAP70-05 is not pin-compatible with single-diode SOT23 parts like the BAP64-03. However, the ON Semiconductor MMBAP70-05 is a verified second-source with identical pinout, marking, and specifications - ensuring drop-in replacement capability for the BAP70-05.