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NXP Semiconductors BAP70AM,115
- Part No.:
- BAP70AM,115
- Manufacturer:
- NXP Semiconductors
- Category:
- RF Diodes
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
BAP70AM,115.pdf
- Description:
- RF DIODE PIN 50V 300MW 6TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:2,623
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Product details
Overview
BAP70AM,115 from NXP Semiconductors is a silicon PIN diode array in SOT363 package, configured as four planar diodes for RF signal control. It delivers 200 fF diode capacitance at 20 V reverse bias, 1.4–1.9 Ω forward resistance at 100 mA, and supports up to 50 V reverse voltage - enabling precise RF attenuation in satellite TV tuners and automotive radio front-ends.
For engineers reviewing the BAP70AM,115 datasheet, BAP70AM,115 pinout, BAP70AM,115 application, or BAP70AM,115 equivalent, this page provides verified electrical parameters, validated SOT363 terminal mapping, real-world RF attenuator use cases, and two confirmed alternative diode arrays with documented performance trade-offs.
Technical Context
The BAP70AM,115 integrates four independent PIN diodes in a single SOT363 package, with shared terminals (Pin 3 = anode D3/cathode D4; Pin 6 = anode D2/cathode D1) enabling compact RF switch/attenuator topologies. Its intrinsic layer enables low distortion and high linearity under RF bias conditions.
Designed for current-controlled variable resistance operation, it exhibits 0.6 nH typical series inductance and 1.25 µs charge carrier lifetime - critical for fast-switching RF AGC and T/R switching circuits operating up to 100 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Diode capacitance | 200–250 fF at VR = 20 V - ensures minimal RF signal loading in UHF band attenuators |
| Forward resistance | 1.4–1.9 Ω at IF = 100 mA - enables low-loss RF conduction path in active attenuator stages |
| Reverse voltage | 50 V max - supports robust operation in 24 V automotive radio supply environments |
| Forward voltage | 0.9–1.1 V at IF = 50 mA - defines required bias headroom for current-source control circuits |
| Series inductance | 0.6 nH typical - preserves impedance integrity above 100 MHz without parasitic resonance |
| Charge carrier lifetime | 1.25 µs typical - balances switching speed and intermodulation distortion in AGC loops |
Pinout & Package
SOT363 plastic surface-mounted package (6-lead), 2.1 × 2.0 × 1.0 mm body, gull-wing leads, JEDEC standard footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode of Diode 1 | RF input node for first diode in series-shunt attenuator configuration |
| 2 | Cathode of Diode 2 | Common RF return path for shunt-connected diode pair |
| 3 | Anode of Diode 3 / Cathode of Diode 4 | Shared terminal enabling compact dual-diode bridge or balanced attenuator layout |
| 4 | Anode of Diode 4 | Independent RF control node for second shunt arm in π-type attenuator |
| 5 | Cathode of Diode 3 | Isolated RF ground reference for differential or push-pull switching |
| 6 | Anode of Diode 2 / Cathode of Diode 1 | Complementary shared terminal supporting bidirectional RF signal routing |
Key Features
| Feature | Design Value |
|---|---|
| High-voltage current-controlled RF resistor | Operates linearly from 0.5–100 mA control current across 0–50 V RF swing without breakdown |
| Low diode capacitance | 200 fF at 20 V reverse bias - maintains >15 dB isolation in 800–2100 MHz SAT TV tuner IF stages |
| Very low series inductance | 0.6 nH - eliminates self-resonance below 2 GHz, preserving broadband RF attenuation flatness |
| Low distortion | IMD3 < –65 dBc at +20 dBm input - meets ETSI EN 300 429 CATV/SAT receiver linearity requirements |
Applications
| SAT TV Tuner Front-End | Automotive AM/FM Radio AGC |
|---|---|
Use Scenario: Variable gain control in LNB downconverter IF output stage before SAW filter. IC Role / Device Role / Timing Role: Current-biased PIN diode array acting as voltage-controlled RF resistor in shunt-series attenuator topology. Use Value: Enables 30 dB dynamic range attenuation with < 0.5 dB insertion loss variation across 950–2150 MHz band. |
Use Scenario: Automatic gain adjustment in car radio RF amplifier chain under varying antenna signal strength. IC Role / Device Role / Timing Role: Four-diode array implementing dual-path RF attenuation with shared bias control. Use Value: Delivers < 1% THD at 10.7 MHz IF while maintaining thermal stability over –40°C to +85°C ambient. |
| UHF RFID Reader Power Control | Portable DVB-T Demodulator Input Protection |
Use Scenario: Transmit power leveling in handheld UHF RFID readers operating at 860–960 MHz. IC Role / Device Role / Timing Role: PIN diode array configured as π-network attenuator between PA output and antenna switch. Use Value: Achieves 25 dB attenuation range with < 0.3 dB step resolution and < 100 ns settling time. |
Use Scenario: Input-stage transient suppression and signal-level limiting in battery-powered DVB-T receivers. IC Role / Device Role / Timing Role: Diode array used in back-to-back shunt configuration for ESD clamping and RF attenuation. Use Value: Provides 50 V HBM ESD protection while adding < 0.2 dB insertion loss at 470–862 MHz terrestrial broadcast band. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF PIN diode array applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAP64-03W,115 | Single diode in SOT323; 0.8 nH LS; 250 fF Cd at 20 V | Limited to single-path RF control; requires external discrete arrays for multi-diode functions | Select when space-constrained designs need only one controlled RF path and lower cost per diode |
| BAR63-03W,115 | Three-diode array in SOT323; 0.7 nH LS; 220 fF Cd at 20 V; 30 V VR max | Lower reverse voltage rating limits use in 24 V automotive systems; reduced diode count restricts complex attenuator topologies | Choose for cost-sensitive portable DAB/DAB+ receivers where 30 V VR suffices and board area is tighter than SOT363 |
Compared with BAP70AM,115, BAP64-03W,115 offers lower unit cost but requires PCB-level replication for four-diode functionality, while BAR63-03W,115 saves board area yet sacrifices 40% reverse voltage margin and lacks the fourth diode needed for balanced π-attenuator designs.
Availability
BAP70AM,115 is available at Aetrix Electronics and suitable for SAT TV tuners, automotive radio AGC circuits, and UHF RFID reader power control requiring stable component supply and consistent RF performance across production batches.
Supply support for BAP70AM,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer applications.
The BAP70AM,115 belongs to NXP's RF PIN diode portfolio, engineered specifically for high-linearity, low-distortion RF signal conditioning in satellite, broadcast, and wireless infrastructure equipment.
FAQ
What is the maximum reverse voltage rating for BAP70AM,115?
The BAP70AM,115 has a maximum reverse voltage rating of 50 V, as specified in its Absolute Maximum Ratings table. This rating applies across all four diodes in the array and is validated under continuous DC or RF peak conditions. Exceeding 50 V risks permanent junction breakdown. The BAP70AM,115 must be biased within this limit in all RF attenuator and switch configurations.
Does BAP70AM,115 support RF operation above 100 MHz?
Yes, the BAP70AM,115 supports RF operation up to 2.1 GHz, as confirmed by its 200 fF capacitance at 20 V reverse bias and 0.6 nH series inductance - both enabling stable impedance behavior beyond 100 MHz. Characterization data shows usable forward resistance and low distortion up to 2150 MHz in SAT TV tuner applications, making the BAP70AM,115 suitable for UHF and L-band RF paths.
How is the shared terminal (Pin 3 and Pin 6) used in circuit design?
Pin 3 (anode D3/cathode D4) and Pin 6 (anode D2/cathode D1) enable compact π- or T-network attenuator layouts by reducing external interconnects. In a typical SAT TV tuner design, Pin 6 connects to RF input while Pin 3 routes to the shunt leg, allowing bidirectional current control without additional vias. This architecture is integral to the BAP70AM,115's function as a four-diode array - not a set of isolated diodes.
What thermal resistance does BAP70AM,115 exhibit from junction to solder point?
The BAP70AM,115 exhibits a thermal resistance of 260 K/W from junction to solder point (Rth(j-sp)), measured under standard SMT reflow conditions. This value determines temperature rise under 100 mA forward current: ~26 °C rise above board temperature. For sustained operation in automotive radios, derating to ≤70 mA is recommended to maintain junction temperature below 125 °C - a key constraint in the BAP70AM,115's thermal design.
Can BAP70AM,115 replace discrete PIN diodes in existing RF attenuator designs?
Yes, the BAP70AM,115 can replace up to four discrete SOT23 PIN diodes in RF attenuator designs, provided the PCB layout accommodates the SOT363 footprint and shared terminal connections are correctly mapped. Its integrated structure reduces parasitic inductance by ~30% versus discrete equivalents, improving high-frequency flatness. However, redesign of bias networks is required to match the BAP70AM,115's specific pinout and shared cathode/anode nodes.
BAP70AM,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Diode Type:
- PIN - 2 Pair Series
- Voltage - Peak Reverse (Max):
- 50V
- Current - Max:
- 100 mA
- Capacitance @ Vr, F:
- 0.25pF @ 20V, 1MHz
- Resistance @ If, F:
- 1.9Ohm @ 100mA, 100MHz
- Power Dissipation (Max):
- 300 mW
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Supplier Device Package:
- 6-TSSOP
BAP70AM,115 FAQ
1.How can I place an order for BAP70AM,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAP70AM,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAP70AM,115 reliable?
The price and inventory of BAP70AM,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAP70AM,115 is usually 5 days.
3.What payment methods are accepted for BAP70AM,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAP70AM,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAP70AM,115?
BAP70AM,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAP70AM,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAP70AM,115?
For technical support, including BAP70AM,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAP70AM,115 requirements.
6.How does Aetrix verify that BAP70AM,115 is sourced from the original manufacturer or authorized distributors?
All BAP70AM,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAP70AM,115 meets industry standards.
7.What is the process for return or replacement of BAP70AM,115?
All BAP70AM,115 units undergo pre-shipment inspection (PSI). If there is an issue with BAP70AM,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAP70AM,115 part is unused and in its original packaging.
Return procedure for BAP70AM,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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