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NXP Semiconductors BAP70AM,135
- Part No.:
- BAP70AM,135
- Manufacturer:
- NXP Semiconductors
- Category:
- RF Diodes
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
BAP70AM,135.pdf
- Description:
- RF DIODE PIN 50V 300MW 6TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:8,242
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Product details
Overview
BAP70AM,135 from NXP Semiconductors is a silicon PIN diode array in SOT363 package, configured as four planar diodes for RF signal control. It delivers 200 fF capacitance at 20 V reverse bias, 1.4–1.9 Ω forward resistance at 100 mA, and supports 50 V reverse voltage and 100 mA forward current - enabling precise RF attenuation in satellite TV tuners and automotive radio front-ends.
For engineers reviewing the BAP70AM,135 datasheet, BAP70AM,135 pinout, BAP70AM,135 application, or BAP70AM,135 equivalent, key selection criteria include diode capacitance vs. reverse voltage behavior, low series inductance (0.6 nH), charge carrier lifetime (1.25 µs), and dual-anode/cathode shared terminal configuration for compact switch/attenuator designs.
Technical Context
The BAP70AM,135 integrates four independent PIN diodes in a single SOT363 package with shared terminals: Pin 3 serves as both anode of Diode 3 and cathode of Diode 4; Pin 6 as anode of Diode 2 and cathode of Diode 1. This arrangement enables bidirectional RF path control without external interconnects.
Its intrinsic-layer design yields low distortion and stable RF resistance across 100 MHz–1 GHz bands, with forward resistance tunable from 77 Ω (0.5 mA) to 1.4 Ω (100 mA). Thermal resistance of 260 K/W to solder point ensures reliable operation under continuous RF bias conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Diode Configuration | Four discrete PIN diodes with shared terminals (Pins 3 & 6) |
| Reverse Voltage (VR) | 50 V - sets maximum RF signal swing before breakdown |
| Forward Resistance (rD) | 1.4–1.9 Ω at IF = 100 mA - defines minimum insertion loss in attenuator ON-state |
| Capacitance (Cd) | 200–250 fF at VR = 20 V - determines OFF-state isolation and frequency cutoff |
| Series Inductance (LS) | 0.6 nH - minimizes parasitic reactance above 100 MHz |
| Charge Carrier Lifetime (τL) | 1.25 µs - balances switching speed vs. distortion in AGC circuits |
Pinout & Package
SOT363 plastic surface-mounted package (6-lead, 2.1 × 2.0 × 1.0 mm); lead pitch 0.95 mm; moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode of Diode 1 | RF input path for first diode; requires DC blocking if biased externally |
| 2 | Cathode of Diode 2 | Common RF return for Diode 2; ties to ground or bias network |
| 3 | Anode of Diode 3 / Cathode of Diode 4 | Shared node enabling compact T- or π-attenuator topologies |
| 4 | Anode of Diode 4 | Independent RF path control for fourth diode; decoupled from Diode 3 anode |
| 5 | Cathode of Diode 3 | Isolated return for Diode 3; avoids crosstalk with Diode 4 cathode |
| 6 | Anode of Diode 2 / Cathode of Diode 1 | Shared node supporting bidirectional signal routing in switch matrices |
Key Features
| Feature | Design Value |
|---|---|
| High-voltage RF resistor | Operates up to 50 V reverse bias while maintaining <250 fF capacitance - enables wide-dynamic-range attenuators |
| Low series inductance | 0.6 nH allows stable impedance control beyond 1 GHz - critical for SAT TV LNB front-ends |
| Low distortion | Result of uniform intrinsic layer doping - preserves signal integrity in multi-tone RF environments |
| Thermally optimized | 260 K/W junction-to-solder-point resistance supports 300 mW total dissipation at Tsp = 90 °C |
Applications
| Satellite TV Tuner Front-End | Automotive AM/FM Radio Diversity Receiver |
|---|---|
Use Scenario: Attenuating strong out-of-band signals before LNB downconversion to prevent mixer compression. IC Role / Device Role / Timing Role: RF voltage-controlled resistor in programmable attenuator stage. Use Value: 200 fF capacitance at 20 V enables >40 dB isolation at 2.1 GHz while maintaining 1.4 Ω ON-resistance for minimal insertion loss. |
Use Scenario: Dynamic gain control in antenna diversity combiner to suppress multipath interference. IC Role / Device Role / Timing Role: Four-diode array implementing dual-path switched attenuator with shared bias nodes. Use Value: 1.25 µs carrier lifetime ensures fast AGC response (<5 µs settling) without harmonic generation in 70–108 MHz band. |
| Portable DVB-T/H Tuner Module | ISM Band 2.4 GHz Transceiver Front-End |
Use Scenario: Input protection and automatic level control in handheld digital terrestrial TV receivers. IC Role / Device Role / Timing Role: PIN diode array used in limiter + variable attenuator cascade. Use Value: 0.6 nH series inductance maintains flat frequency response from 470–862 MHz - eliminates tuning adjustments. |
Use Scenario: Transmit/receive (T/R) switch and power detector biasing in Wi-Fi/BT combo modules. IC Role / Device Role / Timing Role: Dual-diode pair providing simultaneous RX path attenuation and TX path isolation. Use Value: Shared-terminal pinout (Pins 3 & 6) reduces PCB area by 30% vs. discrete diode solutions in 2.4 GHz front-end layouts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF PIN diode array applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAP64-03W,115 | Single PIN diode in SOT323; 0.85 nH LS; 350 fF Cd at 20 V | Requires four separate devices and routing for equivalent function | Choose when board space permits discrete layout and lower cost per diode is prioritized |
| BAR63-03W,115 | Single high-speed PIN diode; 0.5 nH LS; 220 fF Cd at 20 V; 100 mA IF rating | Lacks integrated multi-diode topology - no shared-terminal switching capability | Prefer for ultra-low-inductance single-path switches where array integration is unnecessary |
Compared with BAP64-03W,115 and BAR63-03W,115, the BAP70AM,135 provides system-level space savings and reduced component count via its four-diode SOT363 configuration with dual shared terminals - directly enabling compact T-attenuator and SPDT switch implementations without inter-die routing.
Availability
BAP70AM,135 is available at Aetrix Electronics and suitable for satellite TV tuners, automotive radio diversity receivers, and portable DVB-T/H modules requiring stable component supply, consistent parametric performance, and long-term production continuity.
Supply support for BAP70AM,135 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer markets.
The BAP70AM,135 belongs to NXP's RF PIN diode portfolio, engineered specifically for high-linearity, low-distortion RF signal conditioning in broadcast and wireless infrastructure applications - emphasizing thermal stability, repeatable capacitance vs. voltage behavior, and compact multi-diode integration.
FAQ
What is the maximum reverse voltage rating for BAP70AM,135?
The BAP70AM,135 has an absolute maximum reverse voltage (VR) rating of 50 V, as specified in Table 4 of the NXP datasheet. This rating applies across the full operating temperature range and defines the upper limit for RF signal swing or DC bias voltage applied across any individual diode without risk of avalanche breakdown. Exceeding this value may cause permanent damage to the BAP70AM,135.
How does the shared-terminal pinout of BAP70AM,135 affect circuit layout?
The BAP70AM,135 uses Pins 3 and 6 as shared anode/cathode nodes - Pin 3 connects to anode of Diode 3 and cathode of Diode 4, while Pin 6 connects to anode of Diode 2 and cathode of Diode 1. This reduces external trace count in T-attenuator or SPDT switch designs, but requires careful bias network partitioning to avoid unintended conduction paths. Layout must isolate DC bias rails for each diode pair in the BAP70AM,135.
What is the typical diode capacitance of BAP70AM,135 at 5 V reverse bias?
According to Table 6 in the NXP datasheet, the typical diode capacitance (Cd) of the BAP70AM,135 is 270 fF at VR = 5 V, measured at 1 MHz with Tamb = 25 °C. This value is critical for predicting OFF-state isolation in RF attenuators and must be verified in actual PCB layout due to parasitic coupling effects near the BAP70AM,135 SOT363 pads.
Can BAP70AM,135 be used in automotive infotainment systems?
The BAP70AM,135 is not automotive-qualified per NXP's legal disclaimers (Section 11.3), and lacks AEC-Q200 stress testing or guaranteed operation over -40 °C to +105 °C. While it functions in automotive AM/FM radio diversity receivers under controlled thermal conditions, NXP explicitly states non-automotive qualification - system designers must perform full reliability validation before deploying the BAP70AM,135 in production automotive hardware.
What is the thermal resistance from junction to solder point for BAP70AM,135?
The thermal resistance from junction to solder point (Rth(j-sp)) for the BAP70AM,135 is 260 K/W, as listed in Table 5 of the NXP datasheet. This parameter assumes proper PCB copper pour and reflow profile; exceeding 300 mW total power dissipation at Tsp = 90 °C risks junction overheating. Thermal design must account for all four diodes simultaneously conducting in the BAP70AM,135.
BAP70AM,135 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Diode Type:
- PIN - 2 Pair Series
- Voltage - Peak Reverse (Max):
- 50V
- Current - Max:
- 100 mA
- Capacitance @ Vr, F:
- 0.25pF @ 20V, 1MHz
- Resistance @ If, F:
- 1.9Ohm @ 100mA, 100MHz
- Power Dissipation (Max):
- 300 mW
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Supplier Device Package:
- 6-TSSOP
BAP70AM,135 FAQ
1.How can I place an order for BAP70AM,135 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAP70AM,135 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAP70AM,135 reliable?
The price and inventory of BAP70AM,135 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAP70AM,135 is usually 5 days.
3.What payment methods are accepted for BAP70AM,135?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAP70AM,135 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAP70AM,135?
BAP70AM,135 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAP70AM,135 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAP70AM,135?
For technical support, including BAP70AM,135 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAP70AM,135 requirements.
6.How does Aetrix verify that BAP70AM,135 is sourced from the original manufacturer or authorized distributors?
All BAP70AM,135 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAP70AM,135 meets industry standards.
7.What is the process for return or replacement of BAP70AM,135?
All BAP70AM,135 units undergo pre-shipment inspection (PSI). If there is an issue with BAP70AM,135, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAP70AM,135 part is unused and in its original packaging.
Return procedure for BAP70AM,135:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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