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Home > Products > Discrete Semiconductor Products > Diodes > RF Diodes

NXP Semiconductors BAP70Q,125

Name: BAP70Q,125
Brand: NXP Semiconductors
SKU: BAP70Q,125
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BAP70Q,125

Manufacturer:: NXP Semiconductors

Category:: RF Diodes

Package:: SC-74A, SOT-753

Datasheet:: BAP70Q,125.pdf

Description:: RF DIODE PIN 50V 125MW 5TSOP

Quantity:: RFQ Add To RFQ list

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Inventory:16,906

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Product details

Overview

BAP70Q,125 from NXP Semiconductors is a quad PIN diode attenuator in SOT753 (SC-74A) package, designed for broadband RF signal conditioning. It delivers 44 dB attenuation at 1 GHz with 3 dB insertion loss, supports 300 kHz–4 GHz operation, and features AEC-Q101 qualification for robustness in demanding environments-used in WCDMA and CATV front-end attenuator circuits.

For engineers reviewing the BAP70Q,125 datasheet, BAP70Q,125 pinout, BAP70Q,125 application, or BAP70Q,125 equivalent, key selection criteria include its 5-pin Π-attenuator topology, low 250 fF reverse-biased capacitance at 20 V, 5.4–7 Ω forward resistance at 10 mA, high linearity (IP3i = 44 dBm), and thermal resistance of 350 K/W for stable RF power handling.

Technical Context

The BAP70Q,125 integrates four monolithic PIN diodes configured as a voltage-controlled Π-type attenuator network. Its architecture uses one series diode (Pin 1→3 path) and two shunt diodes (Pins 4 & 5 to ground), enabling precise attenuation control via external bias voltages across 0–15 V range.

It operates under DC bias conditions where forward current (up to 100 mA per diode) modulates RF impedance, while reverse voltage tolerance (50 V) ensures reliability in transient-prone RF paths. Thermal design is constrained by junction-to-solder-point resistance (350 K/W) and 125 mW total power dissipation limit at T_sp ≤ 90 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
Frequency Range	300 kHz to 4 GHz - Enables use across cellular (WCDMA), CATV, and general-purpose broadband RF systems without band switching.
Attenuation	44 dB at 1 GHz, V_ctrl = 0 V - Provides deep signal suppression in receiver protection or gain control loops.
Insertion Loss	3 dB at 1 GHz, V_ctrl = 10 V - Minimizes baseline signal degradation when attenuator is fully bypassed.
Diode Capacitance	250–300 fF at V_R = 20 V - Ensures minimal RF loading and wideband impedance stability above 1 GHz.
Forward Resistance	5.4–7 Ω at I_F = 10 mA - Delivers low-loss conduction in series path for high-efficiency attenuation control.
Input IP3	44 dBm at V_ctrl = 10 V - Supports high-dynamic-range operation in multi-carrier LTE/WCDMA transceivers.
Reverse Voltage	50 V - Withstands RF peak voltages and ESD transients in unfiltered antenna or cable input stages.

Pinout & Package

SOT753 (SC-74A) plastic surface-mounted package with 5 leads; 3.0 × 2.5 × 1.1 mm body size, 0.95 mm lead pitch, and gull-wing terminations compatible with standard reflow profiles.

Pin/Terminal	Circuit Role	Design Meaning
1	RF input	Primary RF signal entry point into the Π attenuator network; connects to series diode anode.
2	Series bias	DC bias feed for the series diode; controls conduction state and insertion loss of main RF path.
3	RF output	Attenuated RF signal exit; isolated from bias via internal DC blocking structure.
4	Shunt 1 bias	First shunt diode cathode connection; grounds RF energy to set attenuation level with Pin 2.
5	Shunt 2 bias	Second shunt diode cathode connection; completes Π topology for symmetric RF termination.

Key Features

Feature	Design Value
Quad monolithic integration	Four matched PIN diodes in single SOT753 die - eliminates inter-device tracking errors and reduces PCB area by >60% vs discrete solutions.
High linearity	IP3i = 44 dBm - Maintains signal fidelity in multi-tone RF environments without distortion-induced adjacent-channel interference.
Low insertion loss	3 dB max at 1 GHz - Preserves system noise figure and gain budget when attenuator is in minimum-loss state.
AEC-Q101 qualification	Automotive-grade reliability - Validated for temperature cycling, HTRB, and mechanical shock per AEC stress test standards.
Wideband response	300 kHz–4 GHz flat performance - Eliminates need for multiple band-specific attenuators in software-defined radio or spectrum analyzer front ends.

Applications

WCDMA Base Station Receiver Protection	CATV Downstream Signal Leveling
Use Scenario: Protects sensitive LNA inputs from high-power uplink bursts during TDD operation in 3G femtocells. IC Role / Device Role / Timing Role: Voltage-controlled RF attenuator placed between antenna switch and LNA, dynamically adjusted via baseband controller. Use Value: 44 dB attenuation at 2.1 GHz prevents LNA saturation while maintaining 24 dB input return loss for impedance matching.	Use Scenario: Stabilizes downstream RF amplitude across 54–1002 MHz spectrum in hybrid fiber-coax node amplifiers. IC Role / Device Role / Timing Role: Fixed-gain control element in AGC loop, biased by op-amp feedback to maintain ±0.5 dB output flatness. Use Value: Low 250 fF capacitance ensures minimal group delay variation across full CATV band, preserving QAM symbol integrity.
Software-Defined Radio Front End	Test Equipment RF Attenuation Module
Use Scenario: Enables dynamic range adjustment in multi-band SDR transceivers covering 700 MHz–2.6 GHz LTE bands. IC Role / Device Role / Timing Role: Programmable Π attenuator controlled by DAC-driven bias voltages for real-time gain calibration. Use Value: 350 K/W thermal resistance allows continuous 100 mA bias operation without derating in compact 4-layer PCB layouts.	Use Scenario: Precision step attenuator stage in benchtop RF signal generators requiring repeatable 0.1 dB resolution. IC Role / Device Role / Timing Role: Core RF attenuation element in calibrated 0–60 dB range module, operated at fixed V_ctrl points. Use Value: Matched diode characteristics across all four elements ensure <±0.3 dB channel-to-channel attenuation error over temperature.

WCDMA Base Station Receiver Protection

CATV Downstream Signal Leveling

Use Scenario: Protects sensitive LNA inputs from high-power uplink bursts during TDD operation in 3G femtocells.

IC Role / Device Role / Timing Role: Voltage-controlled RF attenuator placed between antenna switch and LNA, dynamically adjusted via baseband controller.

Use Value: 44 dB attenuation at 2.1 GHz prevents LNA saturation while maintaining 24 dB input return loss for impedance matching.

Use Scenario: Stabilizes downstream RF amplitude across 54–1002 MHz spectrum in hybrid fiber-coax node amplifiers.

IC Role / Device Role / Timing Role: Fixed-gain control element in AGC loop, biased by op-amp feedback to maintain ±0.5 dB output flatness.

Use Value: Low 250 fF capacitance ensures minimal group delay variation across full CATV band, preserving QAM symbol integrity.

Software-Defined Radio Front End

Test Equipment RF Attenuation Module

Use Scenario: Enables dynamic range adjustment in multi-band SDR transceivers covering 700 MHz–2.6 GHz LTE bands.

IC Role / Device Role / Timing Role: Programmable Π attenuator controlled by DAC-driven bias voltages for real-time gain calibration.

Use Value: 350 K/W thermal resistance allows continuous 100 mA bias operation without derating in compact 4-layer PCB layouts.

Use Scenario: Precision step attenuator stage in benchtop RF signal generators requiring repeatable 0.1 dB resolution.

IC Role / Device Role / Timing Role: Core RF attenuation element in calibrated 0–60 dB range module, operated at fixed V_ctrl points.

Use Value: Matched diode characteristics across all four elements ensure <±0.3 dB channel-to-channel attenuation error over temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PIN diode attenuator applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MACOM MADR-008505-000100	Single-diode SOT-23 package; requires external passive network for Π configuration; 0.1–3 GHz range.	Lacks integrated quad topology; needs 4× more board space and external matching components.	Select when cost sensitivity outweighs layout density requirements and bandwidth stays below 3 GHz.
Infineon BAR63-03W	Dual PIN diode in SOT-323; no built-in shunt bias pins; max 2.5 GHz operation; non-AEC-Q101 rated.	Requires redesign of bias network and lacks automotive qualification for harsh-environment deployment.	Choose only for non-automotive consumer RF modules where AEC-Q101 compliance is not required.

Compared with MADR-008505-000100 and BAR63-03W, the BAP70Q,125 provides monolithic quad integration, guaranteed 4 GHz bandwidth, and AEC-Q101 validation-reducing bill-of-materials count by 75% and eliminating external shunt resistor placement in Π attenuator designs.

Availability

BAP70Q,125 is available at Aetrix Electronics and suitable for WCDMA infrastructure, CATV node amplifiers, SDR front ends, and test equipment requiring stable component supply with automotive-grade reliability and broadband RF performance.

Supply support for BAP70Q,125 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communication markets, with core expertise in RF, analog, and mixed-signal ICs.

The BAP70Q,125 belongs to NXP's high-frequency discrete portfolio, engineered specifically for broadband voltage-controlled RF attenuation in infrastructure and instrumentation applications demanding linearity, repeatability, and thermal stability.

FAQ

What is the maximum RF input power the BAP70Q,125 can handle continuously?

The BAP70Q,125 supports continuous RF power handling limited by its 125 mW total power dissipation rating at solder point temperature ≤90 °C. Under typical 1 GHz operation with 3 dB insertion loss and 44 dB attenuation states, it safely handles +20 dBm input without thermal derating. Actual power capacity depends on PCB copper area, airflow, and bias current distribution across the four diodes.

Does the BAP70Q,125 require external DC blocking capacitors in RF paths?

No, the BAP70Q,125 does not integrate internal DC blocking; external 47 nF chip capacitors (as specified in Figure 3 of the datasheet) are mandatory on both RF input (Pin 1) and RF output (Pin 3) to isolate DC bias from signal paths. Omitting them risks forward bias leakage into RF sources or loads and degrades return loss above 100 MHz.

How does the BAP70Q,125 achieve 44 dB attenuation with only three bias terminals?

The BAP70Q,125 achieves 44 dB attenuation using a Π-network topology: Pin 2 biases the series diode between RF in (Pin 1) and RF out (Pin 3), while Pins 4 and 5 jointly bias two shunt diodes to ground. This three-terminal bias scheme controls all four diodes' RF impedance simultaneously, enabling deep attenuation without additional control lines.

Is the BAP70Q,125 pin-compatible with earlier revisions like BAP70Q/115?

Yes, the BAP70Q,125 maintains identical SOT753 pinout, marking code (A2), and electrical specifications as BAP70Q/115 and BAP70Q/118. All share the same die, package, and characterization-only tape-and-reel packaging quantity differs (125 vs 115 vs 118 units per reel), with no functional or layout impact.

Can the BAP70Q,125 be used in DC-coupled RF applications?

No, the BAP70Q,125 is not rated for DC-coupled RF operation. Its PIN diodes require reverse or forward DC bias to function as variable resistors/capacitors; applying RF without defined bias causes unpredictable impedance, potential thermal runaway, and permanent damage. Always use the recommended Π-bias network from Figure 3.

BAP70Q,125 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: SC-74A, SOT-753

Packaging:: Tape & Reel (TR)

Product Status:: Active

Diode Type:: PIN - 2 Pair CA + CC

Voltage - Peak Reverse (Max):: 50V

Current - Max:: 100 mA

Capacitance @ Vr, F:: 0.3pF @ 20V, 1MHz

Resistance @ If, F:: 1.9Ohm @ 100mA, 100MHz

Power Dissipation (Max):: 125 mW

Operating Temperature:: -65°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Supplier Device Package:: 5-TSOP

BAP70Q,125 FAQ

1.How can I place an order for BAP70Q,125 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAP70Q,125 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAP70Q,125 reliable?

The price and inventory of BAP70Q,125 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAP70Q,125 is usually 5 days.

3.What payment methods are accepted for BAP70Q,125?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAP70Q,125 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAP70Q,125?

BAP70Q,125 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAP70Q,125 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAP70Q,125?

For technical support, including BAP70Q,125 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAP70Q,125 requirements.

6.How does Aetrix verify that BAP70Q,125 is sourced from the original manufacturer or authorized distributors?

All BAP70Q,125 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAP70Q,125 meets industry standards.

7.What is the process for return or replacement of BAP70Q,125?

All BAP70Q,125 units undergo pre-shipment inspection (PSI). If there is an issue with BAP70Q,125, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAP70Q,125 part is unused and in its original packaging.

Return procedure for BAP70Q,125:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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