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NXP Semiconductors BAT18,215
- Part No.:
- BAT18,215
- Manufacturer:
- NXP Semiconductors
- Category:
- RF Diodes
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BAT18,215.pdf
- Description:
- RF DIODE STANDARD 35V TO236AB
- Quantity:
- Payment:
- Shipping:
Inventory:6,717
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Product details
Overview
BAT18,215 from NXP Semiconductors (formerly Philips Semiconductors) is a silicon planar band-switching diode in SOT23 package, rated for 35 V reverse voltage, 100 mA forward current, 1.0 pF capacitance at 20 V, and 0.7 Ω forward resistance at 5 mA/200 MHz - used in RF front-end switching for multi-band mobile handsets.
For engineers reviewing the BAT18,215 datasheet, BAT18,215 pinout, BAT18,215 application, or BAT18,215 equivalent, key selection criteria include low junction-to-ambient thermal resistance (500 K/W), minimal capacitance variation across bias, and verified open-circuit cathode isolation in band-switch configurations.
Technical Context
The BAT18,215 operates as a high-isolation, low-capacitance RF switching diode with an unconnected pin (Pin 2) enabling layout flexibility in series-shunt switch topologies. Its 0.8 pF typical capacitance at 20 V and 1 MHz ensures minimal signal loading in UHF bands.
Thermal performance is defined for FR4 PCB mounting: junction-to-tie-point resistance is 330 K/W, and junction-to-ambient is 500 K/W. Forward voltage remains ≤1.2 V at 100 mA, supporting efficient biasing in battery-powered RF modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage | 35 V max - supports antenna switching in GSM/UMTS/LTE front-ends without breakdown |
| Forward Current | 100 mA continuous - enables robust DC bias delivery in active RF switch circuits |
| Diode Capacitance | 0.8–1.0 pF at VR = 20 V, f = 1 MHz - ensures <0.2 dB insertion loss at 2.5 GHz in 50 Ω systems |
| Forward Resistance | 0.5–0.7 Ω at IF = 5 mA, f = 200 MHz - minimizes series loss in shunt-switch paths |
| Reverse Current | ≤100 nA at VR = 20 V, Tj = 25 °C - maintains high off-state isolation (>45 dB) up to +60 °C |
| Junction Temp | 125 °C max - allows operation in sealed RF power amplifier modules with limited heatsinking |
Pinout & Package
Package: SOT23 (TO-236AB), plastic surface-mounted, 3-lead, 2.8 × 1.4 × 1.1 mm body dimensions per IEC 60134 outline.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode | DC bias input node; connects to positive supply in series-switch configuration |
| 2 | Not connected | Internally isolated; no PCB trace required - reduces parasitic coupling in RF layouts |
| 3 | Cathode | RF signal path output; grounded via external capacitor in shunt-switch mode |
Key Features
| Feature | Design Value |
|---|---|
| Low capacitance | 1.0 pF max at 20 V enables clean harmonic suppression in 800–2700 MHz bands |
| Low forward resistance | 0.7 Ω max at 200 MHz ensures <0.15 dB conduction loss in 50 Ω RF paths |
| Open-circuit Pin 2 | Eliminates need for dummy pad or guard ring - simplifies 2-layer PCB routing |
| FR4-optimized thermal design | 500 K/W junction-to-ambient allows 100 mA operation without heatsink on standard 1-oz copper |
Applications
| Mobile Handset Band Switching | ISM Band Transceiver Front-End |
|---|---|
Use Scenario: Selecting between GSM 900 MHz and DCS 1800 MHz antenna paths in dual-band handsets. IC Role / Device Role / Timing Role: RF series-shunt switching diode controlling signal routing under DC bias control. Use Value: 1.0 pF capacitance and 0.7 Ω resistance deliver >35 dB isolation and <0.2 dB insertion loss at both bands. | Use Scenario: Antenna sharing between 2.4 GHz Wi-Fi and 868 MHz sub-GHz LoRa transceivers. IC Role / Device Role / Timing Role: High-isolation RF switch isolating transmit/receive paths during frequency hopping. Use Value: ≤100 nA reverse leakage ensures stable off-state impedance across temperature, preventing cross-band interference. |
| UWB Pulse Generator Bias Control | Automotive Keyless Entry Receiver |
Use Scenario: DC bias switching for ultra-wideband pulse shaping networks requiring minimal parasitic loading. IC Role / Device Role / Timing Role: Low-capacitance series switch enabling fast turn-on (<1 ns) for gated RF pulses. Use Value: 0.8 pF typical capacitance preserves pulse edge integrity up to 5 GHz bandwidth. | Use Scenario: Antenna diversity switching between two 315 MHz receiver inputs in automotive RKE modules. IC Role / Device Role / Timing Role: Low-loss RF path selector improving sensitivity by reducing insertion loss in receive chain. Use Value: 0.7 Ω forward resistance contributes <0.1 dB total path loss - critical for meeting −110 dBm sensitivity targets. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF band-switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAR63-02V | 0.5 pF max capacitance, 1.2 Ω forward resistance, same SOT23-3 package | Lower capacitance but higher rD - better for >3 GHz, worse for low-loss 900 MHz paths | Select BAR63-02V when prioritizing ultra-low capacitance over insertion loss in millimeter-wave adjacent designs |
| BAT54CW | Dual-diode configuration (common cathode), 10 pF capacitance, 1.5 Ω rD | Designed for general-purpose clamping, not optimized for RF switching isolation | Use BAT54CW only in non-critical receive-path protection where 10 pF capacitance is acceptable |
Compared with BAR63-02V and BAT54CW, the BAT18,215 delivers optimal balance of capacitance (≤1.0 pF), forward resistance (≤0.7 Ω), and thermal resistance (500 K/W) for cost-sensitive, thermally constrained RF band-switching in sub-3 GHz consumer wireless systems.
Availability
BAT18,215 is available at Aetrix Electronics and suitable for mobile handset RF front-ends, ISM band transceiver designs, and automotive keyless entry receivers requiring stable component supply and long-term lifecycle support.
Supply support for BAT18,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company formed from the spin-off of Philips Semiconductors in 2006, specializing in secure connectivity solutions for automotive, industrial, and mobile markets.
The BAT18,215 belongs to NXP's legacy RF switching diode product line, engineered specifically for high-isolation, low-loss band selection in battery-powered portable RF systems.
FAQ
What is the maximum reverse voltage rating for BAT18,215?
The BAT18,215 has a maximum continuous reverse voltage (VR) rating of 35 V, as specified in the Absolute Maximum Ratings table of its Philips/NXP datasheet Rev. 02. This rating applies under all operating conditions and must not be exceeded to prevent junction breakdown. The BAT18,215 is intended for RF switching applications where reverse bias ensures high off-state isolation, not for high-voltage rectification.
Does BAT18,215 have a pin-compatible replacement in modern NXP portfolios?
No direct pin-compatible replacement for BAT18,215 exists in current NXP portfolios; the device remains in active supply as a legacy RF switching diode. While newer alternatives like the BAP50-03 offer improved specs, they use different packages and pinouts. The BAT18,215 continues to be stocked by Aetrix Electronics with full traceability and lifecycle coordination support.
How does the unconnected Pin 2 affect PCB layout for BAT18,215?
Pin 2 of the BAT18,215 is internally not connected, allowing designers to omit a copper pad or via at that location - reducing parasitic capacitance and simplifying 2-layer RF layouts. This feature eliminates the need for guard rings or isolation slots near Pin 2, directly improving isolation in compact antenna switch modules where the BAT18,215 is deployed.
What is the typical diode capacitance of BAT18,215 at 1 MHz and 20 V reverse bias?
The typical diode capacitance (Cd) of BAT18,215 is 0.8 pF at VR = 20 V and f = 1 MHz, with a maximum of 1.0 pF, per Table 6 of the official datasheet. This low, tightly controlled capacitance enables predictable impedance matching in 50 Ω RF paths and supports stable performance across GSM, UMTS, and LTE frequency bands where the BAT18,215 is commonly applied.
Can BAT18,215 be used in series-switch versus shunt-switch configurations?
Yes, BAT18,215 supports both series- and shunt-switch topologies due to its low forward resistance (0.7 Ω max) and low capacitance (1.0 pF max). In series mode, it carries RF signal between antenna and transceiver; in shunt mode, it grounds unwanted signal paths. Its Pin 2 isolation and SOT23 footprint make it especially effective in hybrid configurations used in multi-band mobile front-ends containing BAT18,215.
BAT18,215 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Diode Type:
- Standard - Single
- Voltage - Peak Reverse (Max):
- 35V
- Current - Max:
- 100 mA
- Capacitance @ Vr, F:
- 1pF @ 20V, 1MHz
- Resistance @ If, F:
- 700mOhm @ 5mA, 200MHz
- Power Dissipation (Max):
- -
- Operating Temperature:
- 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Supplier Device Package:
- SOT-23 (TO-236AB)
BAT18,215 FAQ
1.How can I place an order for BAT18,215 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAT18,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAT18,215 reliable?
The price and inventory of BAT18,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAT18,215 is usually 5 days.
3.What payment methods are accepted for BAT18,215?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAT18,215 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAT18,215?
BAT18,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAT18,215 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAT18,215?
For technical support, including BAT18,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAT18,215 requirements.
6.How does Aetrix verify that BAT18,215 is sourced from the original manufacturer or authorized distributors?
All BAT18,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAT18,215 meets industry standards.
7.What is the process for return or replacement of BAT18,215?
All BAT18,215 units undergo pre-shipment inspection (PSI). If there is an issue with BAT18,215, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAT18,215 part is unused and in its original packaging.
Return procedure for BAT18,215:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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