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NXP Semiconductors BAT18,235
- Part No.:
- BAT18,235
- Manufacturer:
- NXP Semiconductors
- Category:
- RF Diodes
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BAT18,235.pdf
- Description:
- BAND-SWITCHING DIODE
- Quantity:
- Payment:
- Shipping:
Inventory:150,610
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Product details
Overview
BAT18,235 from NXP Semiconductors (formerly Philips Semiconductors) is a silicon planar band-switching diode in SOT23 package, rated for 35 V reverse voltage, 100 mA forward current, 1.0 pF capacitance at 20 V, 0.7 Ω forward resistance at 5 mA/200 MHz, and used in RF front-end band selection circuits.
For engineers reviewing the BAT18,235 datasheet, BAT18,235 pinout, BAT18,235 application, or BAT18,235 equivalent, key selection criteria include low junction capacitance for minimal signal loading, low series resistance for insertion loss control, reverse voltage margin for antenna switch reliability, and SOT23 footprint compatibility with high-density RF layouts.
Technical Context
The BAT18,235 operates as a passive RF switching element in PIN diode mode, leveraging its low capacitance (0.8–1.0 pF at 20 V, 1 MHz) and low forward resistance (0.5–0.7 Ω at 5 mA, 200 MHz) to enable clean signal path isolation and conduction in multi-band transceivers.
Its thermal resistance from junction to ambient is 500 K/W on FR4 PCB, and maximum junction temperature is limited to 125 °C - parameters critical for sustained RF power handling in compact handheld device designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 35 V max - ensures safe operation under antenna voltage transients in GSM/UMTS band-switching nodes |
| Forward Current (IF) | 100 mA continuous - supports stable DC bias for RF path switching without thermal runaway |
| Diode Capacitance (Cd) | 0.8–1.0 pF at VR = 20 V, f = 1 MHz - minimizes capacitive coupling and frequency detuning in 800–2200 MHz bands |
| Forward Resistance (rD) | 0.5–0.7 Ω at IF = 5 mA, f = 200 MHz - enables low-loss RF conduction in active antenna paths |
| Reverse Current (IR) | ≤100 nA at VR = 20 V, Tj = 25 °C - maintains high off-state isolation in receive-mode band selection |
| Junction Temperature (Tj) | 125 °C max - defines upper thermal limit for reliable long-term operation in sealed mobile enclosures |
Pinout & Package
Package: SOT23 (TO-236AB), plastic surface-mounted, 3-lead, 2.8 mm × 1.4 mm × 1.1 mm body dimensions per IEC/JEDEC outline.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode | DC bias input for forward conduction; connects to RF choke or bias tee in series-switch configuration |
| 2 | Not connected | No internal die connection - electrically isolated; must remain unconnected on PCB |
| 3 | Cathode | DC return path and RF ground reference; ties to system ground plane in shunt-switch topology |
Key Features
| Feature | Design Value |
|---|---|
| Low capacitance | 1.0 pF max at 20 V - preserves impedance matching and minimizes harmonic distortion in wideband RF switches |
| Low forward resistance | 0.7 Ω max at 5 mA/200 MHz - reduces insertion loss below 0.2 dB in 900 MHz band-switch paths |
| High reverse voltage rating | 35 V - accommodates peak antenna voltages during transmit bursts in multi-mode cellular handsets |
| SOT23 footprint | Standard 3-pin SMD outline - enables drop-in replacement and automated assembly in space-constrained RF modules |
Applications
| Cellular Band Switching | GPS/GNSS Front-End |
|---|---|
Use Scenario: Selecting between GSM 850/900 and DCS/PCS bands in dual-mode handset transceivers. IC Role / Device Role / Timing Role: Passive RF series/shunt switch controlling signal routing between antenna and transceiver ICs. Use Value: 1.0 pF capacitance and 0.7 Ω resistance ensure <0.3 dB insertion loss and >30 dB isolation across 800–1900 MHz. | Use Scenario: Isolating GPS L1 (1575.42 MHz) receive path from LTE transmit leakage in co-located antennas. IC Role / Device Role / Timing Role: Shunt-connected diode providing high off-state impedance to block out-of-band interference. Use Value: ≤100 nA reverse current and 35 V VR rating maintain >45 dB rejection of adjacent-band TX noise. |
| Wi-Fi 2.4 GHz Diversity Switch | ISM Band Transceiver Switching |
Use Scenario: Enabling antenna diversity switching between main and auxiliary Wi-Fi 2.4 GHz receivers. IC Role / Device Role / Timing Role: Low-capacitance series switch inserted in RF feedline to route signal without phase shift. Use Value: 0.8 pF typical capacitance prevents resonant detuning of 50 Ω microstrip traces at 2.4 GHz. | Use Scenario: Band-select switching in 868 MHz/915 MHz ISM transceivers for smart metering and industrial telemetry. IC Role / Device Role / Timing Role: DC-biased RF switch enabling separate TX/RX paths in half-duplex systems. Use Value: 100 mA IF rating supports robust bias current delivery over full industrial temperature range (−40 to +85 °C). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF band-switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAV199,215 | Higher capacitance (2.0 pF), higher rD (1.2 Ω), same SOT23 package and 35 V VR | Less suitable for >1.5 GHz bands due to increased insertion loss and reduced isolation | Select BAT18,235 when operating above 1.8 GHz or requiring sub-0.25 dB loss |
| BAR63-02V,215 | Lower capacitance (0.3 pF), lower rD (0.35 Ω), but only 30 V VR rating | Preferred for ultra-low-loss 2.4 GHz Wi-Fi switching where reverse voltage stress is <25 V | Choose BAR63-02V,215 only if system-level transient analysis confirms VR <30 V |
Compared with BAV199,215 and BAR63-02V,215, BAT18,235 delivers optimal balance of 35 V robustness, 1.0 pF capacitance, and 0.7 Ω resistance - making it the preferred choice for multi-band cellular front-ends where both voltage margin and GHz-range RF performance are required.
Availability
BAT18,235 is available at Aetrix Electronics and suitable for cellular band-switching, GPS front-end isolation, Wi-Fi diversity switching, and ISM transceiver path selection requiring stable component supply across extended production lifecycles.
Supply support for BAT18,235 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company formed from the spin-off of Philips Semiconductors in 2006, specializing in secure connectivity solutions for automotive, industrial, and mobile applications.
The BAT18,235 belongs to NXP's legacy RF discrete diode portfolio, designed specifically for high-isolation, low-loss band selection in multi-standard wireless handsets and portable communication devices.
FAQ
What is the maximum reverse voltage rating for BAT18,235?
The BAT18,235 has a maximum continuous reverse voltage (VR) rating of 35 V, as specified in the Absolute Maximum Ratings table of its Philips/NXP datasheet. This rating applies under standard operating conditions and ensures reliable blocking behavior in RF band-switching applications where antenna voltage transients may occur. Exceeding this value risks permanent junction damage.
Does BAT18,235 have a connected pin 2?
No, BAT18,235 pin 2 is explicitly marked "not connected" in the official pinning diagram and must remain unconnected on the PCB layout. It has no internal die connection and serves no electrical function - bridging or routing to this terminal will compromise RF performance and violate the device's validated SOT23 implementation.
What is the typical diode capacitance of BAT18,235 at 20 V reverse bias?
The typical diode capacitance (Cd) of BAT18,235 is 0.8 pF at VR = 20 V and f = 1 MHz, with a maximum of 1.0 pF. This value is measured under controlled thermal conditions (Tj = 25 °C) and directly impacts RF insertion loss and impedance matching in band-switching circuits operating from 800 MHz to 2.2 GHz.
Can BAT18,235 be used in GPS L1 band applications?
Yes, BAT18,235 is suitable for GPS L1 (1575.42 MHz) front-end switching due to its 0.8–1.0 pF capacitance and low forward resistance. Its 35 V VR rating provides margin against coupled LTE transmit energy, and its ≤100 nA reverse current at 20 V ensures high off-state isolation - critical for preserving GPS receiver sensitivity in co-located antenna systems.
What is the thermal resistance from junction to ambient for BAT18,235?
The thermal resistance from junction to ambient (Rth(j-a)) for BAT18,235 is 500 K/W when mounted on a standard FR4 printed-circuit board, as stated in the Thermal Characteristics section. This value assumes natural convection cooling and influences maximum allowable DC bias current under sustained RF operation at elevated ambient temperatures.
BAT18,235 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Bulk
- Product Status:
- Active
- Diode Type:
- Standard - Single
- Voltage - Peak Reverse (Max):
- 35V
- Current - Max:
- 100 mA
- Capacitance @ Vr, F:
- 1pF @ 20V, 1MHz
- Resistance @ If, F:
- 700mOhm @ 5mA, 200MHz
- Power Dissipation (Max):
- -
- Operating Temperature:
- 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Supplier Device Package:
- SOT-23 (TO-236AB)
BAT18,235 FAQ
1.How can I place an order for BAT18,235 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAT18,235 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAT18,235 reliable?
The price and inventory of BAT18,235 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAT18,235 is usually 5 days.
3.What payment methods are accepted for BAT18,235?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAT18,235 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAT18,235?
BAT18,235 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAT18,235 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAT18,235?
For technical support, including BAT18,235 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAT18,235 requirements.
6.How does Aetrix verify that BAT18,235 is sourced from the original manufacturer or authorized distributors?
All BAT18,235 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAT18,235 meets industry standards.
7.What is the process for return or replacement of BAT18,235?
All BAT18,235 units undergo pre-shipment inspection (PSI). If there is an issue with BAT18,235, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAT18,235 part is unused and in its original packaging.
Return procedure for BAT18,235:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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